MG12100W-XN2MM

Power Module 1200V 100A IGBT Module MG12100W-XN2MM RoHS Features • High level of integration • IGBT CHIP(Trench+Field Stop technology) 3 • L  ow saturation voltage and positive temperature coefficient • F  ast switching and short tail current • F  ree wheeling diodes with fast and soft reverse recovery • S  olderable pins for PCB mounting • T  emperature sense included Applications • AC motor control • Motion/servo control • Inverter and power supplies Module Characteristics (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max. Junction Temperature TJ max) Max Unit 150 °C TJ op Operating Temperature -40 125 °C Tstg Storage Temperature -40 125 °C Visol Insulation Test Voltage CTI Comparative Tracking Index Md Mounting Torque AC, t=1min 3000 V 250 Recommended (M5) Weight 2.5 5 N·m 300 g Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Values Unit TJ=25°C 1200 V ±20 V TC=25°C 140 A TC=80°C 100 A tp=1ms 200 A 450 W IGBT VCES Collector - Emitter Voltage VGES Gate - Emitter Voltage IC DC Collector Current ICM Repetitive Peak Collector Current Ptot Power Dissipation Per IGBT Diode VRRM Repetitive Reverse Voltage IF(AV) Average Forward Current IFRM Repetitive Peak Forward Current I2t MG12100W-XN2MM TJ=25°C 1200 V TC=25°C 140 A TC=80°C 100 A tp=1ms 200 A TJ =125°C, t=10ms, VR=0V 1850 A2s 233 1 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:12/04/14 Power Module 1200V 100A IGBT Module Electrical and Thermal Specifications (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max Unit Gate - Emitter Threshold Voltage VCE=VGE, IC=4.0mA 5.0 5.8 6.5 V Collector - Emitter IC=100A, VGE=15V, TJ=25°C 1.7 V Saturation Voltage IC=100A, VGE=15V, TJ=125°C 1.9 V IGBT VGE(th) VCE(sat) IICES Collector Leakage Current IGES Gate Leakage Current RGint Integrated Gate Resistor Qge Gate Charge Cies Input Capacitance Cres Reverse Transfer Capacitance td(on) Turn - on Delay Time VCE=1200V, VGE=0V, TJ=25°C 1 mA VCE=1200V, VGE=0V, TJ=125°C 10 mA 400 nA VCE=0V, VGE=±15V, TJ=125°C VCE=600V, IC=100A , VGE=±15V Rise Time td(off) Turn - off Delay Time IC=100A tf Fall Time VGE=±15V VCC=600V RG =3.9Ω Inductive Load Turn - on Energy Eoff Turn - off Energy ISC Short Circuit Current RthJC 7.5 Ω 0.9 μC 7.1 nF 0.3 nF TJ=25°C 260 ns TJ=125°C 290 ns TJ=25°C 30 ns TJ=125°C 50 ns VCE=25V, VGE=0V, f =1MHz tr Eon -400 TJ=25°C 420 ns TJ=125°C 520 ns TJ=25°C 70 ns TJ=125°C 90 ns TJ=25°C 7.8 mJ TJ=125°C 10 mJ TJ=25°C 8 mJ TJ=125°C 10 mJ tpsc≤10μS , VGE=15V; TJ=125°C , VCC=900V 400 Junction-to-Case Thermal Resistance (Per IGBT) A 0.28 K/W Diode VF Forward Voltage tRR Reverse Recovery Time IRRM Max. Reverse Recovery Current Erec Reverse Recovery Energy RthJCD IF=100A, VGE=0V, TJ =25°C 1.65 V IF=100A, VGE=0V, TJ =125°C 1.65 V IF=100A, VR=600V diF/dt=2400A/µs TJ=125°C 320 ns 105 A 9.5 mJ Junction-to-Case Thermal Resistance (Per Diode) 0.5 K/W Max Unit NTC Characteristics (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions R25 Resistance Tc=25°C B25/50 MG12100W-XN2MM 2 234 Min Typ 5 KΩ 3375 K ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:12/04/14 Power Module 1200V 100A IGBT Module Figure 1: Typical Output Characteristics for IGBT Inverter Figure 2: Typical Output Characteristics for IGBT Inverter 200 200 VGE =19V VGE =17V VGE =15V VGE =13V VGE =11V VGE = 9V VGE =15V 160 Tj =25°C 120 IC (A) IC (A) 160 80 120 80 Tj =125°C 40 40 0 0 0.5 1.0 1.5 2.0 VCE˄V˅ 2.5 3.0 0 3.5 Figure 3: T  ypical Transfer Characteristics for IGBT Inverter 30 VCE =20V 80 Eon Eoff (mJ) Tj =25°C 120 VCE=600V IC=100A VGE=±15V Tj =125°C 25 160 IC (A) 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VCE˄V˅ Figure 4: Switching Energy vs. Gate Resistor for IGBT Inverter 200 Tj =125°C 40 Eon 20 15 10 Eoff 5 0 5 6 7 9 8 VGE˄V˅ 10 11 0 12 Figure 5: Switching Energy vs. Collector Current for IGBT Inverter 30 25 0 4 8 12 16 20 24 28 32 36 RG˄Ω˅ Figure 6: Reverse Biased Safe Operating Area for IGBT Inverter 250 VCE=600V RG=3.9Ω VGE=±15V Tj =125°C 200 Eon 20 150 15 IC (A) Eon Eoff (mJ) TJ =125°C Eoff 10 MG12100W-XN2MM RG=3.9Ω VGE=±15V Tj =125°C 50 5 0 0 100 50 100 IC˄A˅ 150 0 200 235 3 0 200 400 600 800 1000 1200 1400 VCE˄V˅ ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:12/04/14 Power Module 1200V 100A IGBT Module Figure 7: Diode Forward Characteristics for Diode Inverter Figure 8: Switching Energy vs. Gate Resistort for Diode Inverter 12.0 160 10.0 Erec (mJ) 200 IF (A) 110 80 40 1.2 VF˄V˅ 0.6 1.8 0 2.4 Figure 9: Switching Energy vs. Forward Current for Diode Inverter 4 8 12 16 20 24 28 32 36 RG˄Ω˅ Figure 10: Transient Thermal Impedance of Diode and IGBT Inverter 1 14.0 RG=3.9Ω VCE=600V Tj =125°C 12.0 Diode ZthJC (K/W) 10.0 Erec (mJ) 6.0 2.0 Tj =25°C 0 8.0 4.0 Tj =125°C 0 IF=100A VCE=600V Tj =125°C 8.0 6.0 IGBT 0.1 4.0 2.0 0 0 50 100 IF (A) 150 0.01 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (seconds) 200 Figure 11: NTC Characteristics 100000 IFGE =25=15V A V VCE=600V TVj =125°C 10000 R (¡) TVj =25°C R TVj =125°C 1000 100 0 MG12100W-XN2MM 20 40 60 80 100 120 140 160 TC˄°C˅ 236 4 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:12/04/14 Power Module 1200V 100A IGBT Module Circuit Diagram Part Marking System Part Numbering System MG12100 W-X N2MM ASSEMBLY SITE PRODUCT TYPE M: Power Module WAFER TYPE MODULE TYPE G: IGBT VOLTAGE RATING 12: 1200V Space reserved for QR code MG12100W-XN2MM CIRCUIT TYPE X: X LOT NUMBER PACKAGE TYPE CURRENT RATING W: Package W 100: 100A Packing Options Part Number Marking Weight Packing Mode M.O.Q MG12100W-XN2MM MG12100W-XN2MM 300g Bulk Pack 20 MG12100W-XN2MM 237 5 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:12/04/14 Power Module 1200V 100A IGBT Module  Dimensions-Package W                                                                 Ø    Dimensions (mm) MG12100W-XN2MM 238 6 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:12/04/14