MG12150W-XN2MM

Power Module 1200V 150A IGBT Module MG12150W-XN2MM RoHS Features • High level of integration • IGBT CHIP(Trench+Field Stop technology) 3 • L  ow saturation voltage and positive temperature coefficient • F  ast switching and short tail current • F  ree wheeling diodes with fast and soft reverse recovery • S  olderable pins for PCB mounting • T  emperature sense included Applications • AC motor control • Motion/servo control • Inverter and power supplies Module Characteristics (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max. Junction Temperature TJ max) Max Unit 150 °C TJ op Operating Temperature -40 125 °C Tstg Storage Temperature -40 125 °C Visol Insulation Test Voltage CTI Comparative Tracking Index Md Mounting Torque AC, t=1min 3000 V 250 Recommended (M5) Weight 2.5 5 N·m 300 g Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Values Unit TJ=25°C 1200 V ±20 V TC=25°C 200 A TC=80°C 150 A tp=1ms 300 A 625 W IGBT VCES Collector - Emitter Voltage VGES Gate - Emitter Voltage IC DC Collector Current ICM Repetitive Peak Collector Current Ptot Power Dissipation Per IGBT Diode VRRM Repetitive Reverse Voltage IF(AV) Average Forward Current IFRM Repetitive Peak Forward Current I2t MG12150W-XN2MM TJ=25°C 1200 V TC=25°C 200 A TC=80°C 150 A tp=1ms 300 A TJ =125°C, t=10ms, VR=0V 4350 A 2s 240 1 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:12/04/14 Power Module 1200V 150A IGBT Module Electrical and Thermal Specifications (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max Unit Gate - Emitter Threshold Voltage VCE=VGE, IC=6.0mA 5.0 5.8 6.5 V Collector - Emitter IC=150A, VGE=15V, TJ=25°C 1.7 Saturation Voltage IC=150A, VGE=15V, TJ=125°C 1.9 IGBT VGE(th) VCE(sat) IICES Collector Leakage Current IGES Gate Leakage Current RGint Integrated Gate Resistor Qge Gate Charge Cies Input Capacitance Cres Reverse Transfer Capacitance td(on) 1 mA VCE=1200V, VGE=0V, TJ=125°C 10 mA 400 nA VCE=0V, VGE=±15V, TJ=125°C VCE=25V, VGE=0V, f =1MHz Rise Time td(off) Turn - off Delay Time IC=150A tf Fall Time VGE=±15V VCC=600V RG =2.4Ω Inductive Load Turn - on Energy Turn - off Energy ISC Short Circuit Current RthJC -400 VCE=600V, IC=150A , VGE=±15V tr Eoff V VCE=1200V, VGE=0V, TJ=25°C Turn - on Delay Time Eon V 5.0 Ω 1.4 μC 10.5 nF 0.4 nF TJ=25°C 260 ns TJ=125°C 290 ns TJ=25°C 30 ns TJ=125°C 50 ns TJ=25°C 420 ns TJ=125°C 520 ns TJ=25°C 70 ns TJ=125°C 90 ns TJ=25°C 12 mJ TJ=125°C 16 mJ TJ=25°C 11 mJ TJ=125°C 14.5 mJ tpsc≤10μS , VGE=15V; TJ=125°C , VCC=900V 600 Junction-to-Case Thermal Resistance (Per IGBT) A 0.20 K/W Diode VF Forward Voltage tRR Reverse Recovery Time IRRM Max. Reverse Recovery Current Erec Reverse Recovery Energy RthJCD IF=150A, VGE=0V, TJ =25°C 1.65 V IF=150A, VGE=0V, TJ =125°C 1.65 V IF=150A, VR=600V diF/dt=3600A/µs TJ=125°C 350 ns 160 A 13.5 mJ Junction-to-Case Thermal Resistance (Per Diode) 0.36 K/W Max Unit NTC Characteristics (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions R25 Resistance Tc=25°C B25/50 MG12150W-XN2MM 241 2 Min Typ 5 KΩ 3375 K ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:12/04/14 Power Module 1200V 150A IGBT Module Figure 1: Typical Output Characteristics for IGBT Inverter Figure 2: Typical Output Characteristics for IGBT Inverter 300 300 VGE =19V VGE =17V VGE =15V VGE =13V VGE =11V VGE = 9V VGE =15V 240 Tj =25°C 180 IC (A) IC (A) 240 120 180 120 Tj =125°C 60 60 0 0 0.5 1.0 1.5 2.0 VCE˄V˅ 2.5 3.0 0 3.5 Figure 3: T  ypical Transfer Characteristics for IGBT Inverter 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VCE˄V˅ Figure 4: Switching Energy vs. Gate Resistor for IGBT Inverter 300 35 VCE =20V VCE=600V IC=150A VGE=±15V Tj =125°C 30 240 25 Tj =25°C 180 120 Eon Eoff (mJ) IC (A) TJ =125°C Tj =125°C Eon 20 15 Eoff 10 60 5 0 5 6 7 9 8 VGE˄V˅ 10 11 0 12 Figure 5: Switching Energy vs. Collector Current for IGBT Inverter Eon Eoff (mJ) 30 2 4 6 8 10 12 14 16 Figure 6: Reverse Biased Safe Operating Area for IGBT Inverter 350 VCE=600V RG=2.4Ω VGE=±15V Tj =125°C 300 Eon 250 200 20 IC (A) 40 0 Eoff 150 RG=2.4Ω VGE=±15V Tj =125°C 100 10 50 0 0 MG12150W-XN2MM 50 100 150 200 IC˄A˅ 250 0 300 242 3 0 200 400 600 800 1000 1200 1400 VCE˄V˅ ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:12/04/14 Power Module 1200V 150A IGBT Module Figure 7: Diode Forward Characteristics for Diode Inverter Figure 8: Switching Energy vs. Gate Resistort for Diode Inverter 20.0 240 16.0 Erec (mJ) 300 IF (A) 180 120 IF=150A VCE=600V Tj =125°C 12.0 8.0 Tj =125°C 60 4.0 Tj =25°C 0 0 1.2 VF˄V˅ 0.6 1.8 0 2.4 2 4 6 8 10 12 14 16 RG˄Ω˅ Figure 9: Switching Energy vs. Forward Current for Diode Inverter Figure 10: Transient Thermal Impedance of Diode and IGBT Inverter 1 20.0 RG=2.4Ω VCE=600V Tj =125°C Diode ZthJC (K/W) 16.0 Erec (mJ) 0 12.0 8.0 IGBT 0.1 4.0 0 0 50 100 150 IF (A) 200 250 0.01 0.001 300 0.01 0.1 1 10 Rectangular Pulse Duration (seconds) Figure 11: NTC Characteristics 100000 IFGE =25=15V A V VCE=600V TVj =125°C 10000 R (¡) TVj =25°C R TVj =125°C 1000 100 0 MG12150W-XN2MM 20 40 60 80 100 120 140 160 TC˄°C˅ 243 4 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:12/04/14 Power Module 1200V 150A IGBT Module Circuit Diagram Part Marking System Part Numbering System MG12150 W-X N2MM ASSEMBLY SITE PRODUCT TYPE M: Power Module WAFER TYPE MODULE TYPE G: IGBT VOLTAGE RATING 12: 1200V PACKAGE TYPE CURRENT RATING Space reserved for QR code MG12150W-XN2MM CIRCUIT TYPE X:X LOT NUMBER W: Package W 150: 150A Packing Options Part Number Marking Weight Packing Mode M.O.Q MG12150W-XN2MM MG12150W-XN2MM 300g Bulk Pack 20 MG12150W-XN2MM 244 5 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:12/04/14 Power Module 1200V 150A IGBT Module  Dimensions-Package W                                                                 Ø    Dimensions (mm) MG12150W-XN2MM 245 6 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:12/04/14