Power Module
1200V 25A IGBT Module
MG1225H-XBN2MM
RoHS
Features
• High
level of
integration—only one
power semiconductor
module required for the
whole drive
• Low
saturation voltage
and positive temperature
coefficient
• Fast
switching and short
tail current
• F
ree wheeling diodes
with fast and soft reverse
recovery
• Industry standard package
with insulated copper
base plateand soldering
pins for PCB mounting
• Temperature sense
included
Applications
• AC motor control
• M
otion/servo control
• Inverter and power
supplies
Module Characteristics (TJ = 25°C, unless otherwise specified)
Symbol
Parameters
TJ max
Max. Junction Temperature
TJ op
Operating Temperature
Tstg
Storage Temperature
Visol
Insulation Test Voltage
CTI
Comparative Tracking Index
Md
Mounting Torque
Test Conditions
Min
Typ
-40
-40
AC, t=1min
Max
Unit
150
°C
125
°C
125
°C
3000
V
250
Recommended (M5)
Weight
2.5
5
N·m
180
g
Inverter Sector
Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified)
Symbol
Parameters
Test Conditions
Values
Unit
VCES
Collector - Emitter Voltage
TJ=25°C
1200
V
VGES
Gate - Emitter Voltage
IGBT
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
Ptot
Power Dissipation Per IGBT
±20
V
TC=25°C
40
A
TC=80°C
25
A
tp=1ms
50
A
147
W
TJ=25°C
1200
V
TC=25°C
35
A
TC=80°C
25
A
tp=1ms
50
A
TJ =125°C, t=10ms, VR=0V
200
A 2s
Diode
VRRM
Repetitive Reverse Voltage
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
It
2
MG1225H-XBN2MM
1
208
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:10/05/16
Power Module
1200V 25A IGBT Module
Electrical and Thermal Specifications (TJ = 25°C, unless otherwise specified)
Symbol
Parameters
Test Conditions
Min
Typ
Max
Unit
Gate - Emitter Threshold Voltage
VCE=VGE, IC=1mA
5.0
5.8
6.5
V
Collector - Emitter
IC=25A, VGE=15V, TJ=25°C
1.7
V
Saturation Voltage
IC=25A, VGE=15V, TJ=125°C
1.9
V
IGBT
VGE(th)
VCE(sat)
IICES
Collector Leakage Current
IGES
Gate Leakage Current
RGint
Integrated Gate Resistor
Qge
Gate Charge
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
td(on)
Turn - on Delay Time
tr
Rise Time
td(off)
Turn - off Delay Time
VCE=1200V, VGE=0V, TJ=25°C
0.1
mA
VCE=1200V, VGE=0V, TJ=125°C
1
mA
400
nA
VCE=0V, VGE=±15V, TJ=125°C
VCE=600V, IC=25A , VGE=±15V
VCE=25V, VGE=0V, f =1MHz
VCC=600V
IC=25A
RG =36Ω
tf
Fall Time
Eon
Turn - on Energy
VGE=±15V
Inductive Load
Eoff
Turn - off Energy
ISC
Short Circuit Current
RthJC
-400
8.0
Ω
0.24
μC
1.81
nF
0.08
nF
TJ=25°C
90
ns
TJ=125°C
90
ns
TJ=25°C
30
ns
TJ=125°C
50
ns
TJ=25°C
420
ns
TJ=125°C
520
ns
TJ=25°C
70
ns
TJ=125°C
90
ns
TJ=25°C
2.4
mJ
TJ=125°C
3.5
mJ
TJ=25°C
1.8
mJ
TJ=125°C
2.1
mJ
tpsc≤10μS , VGE=15V; TJ=125°C , VCC=900V
100
Junction-to-Case Thermal Resistance (Per IGBT)
A
0.85
K/W
Diode
VF
Forward Voltage
tRR
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
Erec
Reverse Recovery Energy
RthJCD
MG1225H-XBN2MM
IF=25A, VGE=0V, TJ =25°C
1.55
V
IF=25A, VGE=0V, TJ =125°C
1.54
V
IF=25A, VR=600V
diF/dt=-400A/µs
TJ=125°C
200
ns
Junction-to-Case Thermal Resistance (Per Diode)
2
209
20
A
1.5
mJ
1.4
K/W
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:10/05/16
Power Module
1200V 25A IGBT Module
Diode-Rectifier Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified)
Symbol
Parameters
Test Conditions
Values
Unit
VRRM
Repetitive Reverse Voltage
TJ=25°C
1600
V
IF(RMS)
R.M.S. Forward Current Per Diode
TC=80°C
25
A
Non-Repetitive Surge Forward
Current
TJ =45°C, t=10ms, 50Hz
250
A
TJ =45°C, t=8.3ms, 60Hz
300
A
TJ =45°C, t=10ms, 50Hz
312
A 2s
TJ =45°C, t=8.3ms, 60Hz
450
A 2s
IFSM
I 2t
Diode-Rectifier Electrical and Thermal Specifications (TJ = 25°C, unless otherwise specified)
Symbol
Parameters
VF
Forward Voltage
IR
Reverse Leakage Current
RthJCD
Test Conditions
Min
Typ
IF=25A, VGE=0V, TJ =25°C
1.1
IF=25A, VGE=0V, TJ =125°C
1.0
Max
Unit
V
V
VR=1600V, TJ=25°C
50
μA
VR=1600V, TJ=125°C
1
mA
1.35
K/W
Junction-to-Case Thermal Resistance (Per Diode)
Brake-Chopper Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified)
Symbol
Parameters
Test Conditions
Values
Unit
VCES
Collector - Emitter Voltage
TJ=25°C
1200
V
VGES
Gate - Emitter Voltage
IGBT
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
Ptot
Power Dissipation Per IGBT
±20
V
25
A
TC=80°C
15
A
tp=1ms
30
A
105
W
TJ=25°C
1200
V
TC=25°C
25
A
TC=80°C
15
A
TC=25°C
Diode
VRRM
Repetitive Reverse Voltage
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
I2t
MG1225H-XBN2MM
tp=1ms
30
A
TJ =125°C, t=10ms, VR=0V
60
A 2s
3
210
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:10/05/16
Power Module
1200V 25A IGBT Module
Brake-Chopper Electrical and Thermal Specifications (TJ = 25°C, unless otherwise specified)
Symbol
Parameters
Test Conditions
Min
Typ
Max
Unit
Gate - Emitter Threshold Voltage
VCE=VGE, IC=0.6mA
5.0
5.8
6.5
V
Collector - Emitter
IC=15A, VGE=15V, TJ=25°C
1.7
Saturation Voltage
IC=15A, VGE=15V, TJ=125°C
1.9
IGBT
VGE(th)
VCE(sat)
IICES
Collector Leakage Current
IGES
Gate Leakage Current
RGint
Integrated Gate Resistor
Qge
Gate Charge
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
td(on)
Turn - on Delay Time
tr
Rise Time
td(off)
Turn - off Delay Time
50
μA
VCE=1200V, VGE=0V, TJ=125°C
1
mA
400
nA
VCE=0V, VGE=±15V, TJ=125°C
Eon
Turn - on Energy
VCE=25V, VGE=0V, f =1MHz
IC=15A
VGE=±15V
Inductive Load
Eoff
Turn - off Energy
ISC
Short Circuit Current
RthJC
-400
VCE=600V, IC=15A , VGE=±15V
RG =62Ω
Fall Time
V
VCE=1200V, VGE=0V, TJ=25°C
VCC=600V
tf
V
0
Ω
0.15
μC
1.1
nF
0.05
nF
TJ=25°C
90
ns
TJ=125°C
90
ns
TJ=25°C
25
ns
TJ=125°C
30
ns
TJ=25°C
420
ns
TJ=125°C
520
ns
TJ=25°C
90
ns
TJ=125°C
120
ns
TJ=25°C
1.4
mJ
TJ=125°C
2.0
mJ
TJ=25°C
1.0
mJ
TJ=125°C
1.2
mJ
tpsc≤10μS , VGE=15V; TJ=125°C , VCC=900V
45
Junction-to-Case Thermal Resistance (Per IGBT)
A
1.2
K/W
Diode
VF
Forward Voltage
tRR
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
Erec
Reverse Recovery Energy
RthJCD
IF=15A, VGE=0V, TJ =25°C
1.65
V
IF=15A, VGE=0V, TJ =125°C
1.75
V
IF=15A, VR=600V
diF/dt=-400A/µs
TJ=125°C
150
ns
15
A
0.6
mJ
Junction-to-Case Thermal Resistance (Per Diode)
2.1
K/W
Max
Unit
NTC Characteristics (TJ = 25°C, unless otherwise specified)
Symbol
Parameters
Test Conditions
R25
Resistance
Tc=25°C
B25/50
MG1225H-XBN2MM
4
211
Min
Typ
5
KΩ
3375
K
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:10/05/16
Power Module
1200V 25A IGBT Module
Figure 1: Typical Output Characteristics
for IGBT Inverter
Figure 2: Typical Output Characteristics
for IGBT Inverter
50
50
VGE =19V
VGE =17V
VGE =15V
VGE =13V
VGE =11V
VGE = 9V
VGE =15V
40
Tj =25°C
30
IC (A)
IC (A)
40
20
TJ =125°C
20
Tj =125°C
10
0
0
30
10
0.5
1.0
1.5 2.0
VCE˄V˅
2.5
3.0
0
3.5
Figure 3: T
ypical Transfer Characteristics
for IGBT Inverter
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VCE˄V˅
Figure 4: Switching Energy vs. Gate Resistor
for IGBT Inverter
5
50
VCE=600V
IC=25A
VGE=±15V
Tj =125°C
VCE =20V
4
40
Eon
Eon Eoff (mJ)
IC (A)
Tj =25°C
30
Tj =125°C
20
5
6
7
9
8
VGE˄V˅
10
11
Eoff
0
12
Figure 5: Switching Energy vs. Collector Current
for IGBT Inverter
10
8
0
10
20
30
40
RG˄Ω˅
50
60
70
Figure 6: R
everse Biased Safe Operating Area
for IGBT Inverter
VCE=600V
RG=36Ω
VGE=±15V
Tj =125°C
50
40
6
Eon
IC (A)
Eon Eoff (mJ)
2
1
10
0
3
Eoff
4
30
RG=75Ω
VGE=±15V
Tj =125°C
20
2
10
0
0
MG1225H-XBN2MM
10
20
30
IC˄A˅
40
0
50
5
212
0
200
400
600 800 1000 1200 1400
VCE˄V˅
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:10/05/16
Power Module
1200V 25A IGBT Module
Figure 7: Diode Forward Characteristics
for Diode Inverter
Figure 8: S
witching Energy vs. Gate Resistort
for Diode Inverter
50
3.0
40
2.0
Erec (mJ)
IF (A)
30
20
1.5
Tj =125°C
1.0
10
0
0.5
Tj =25°C
0
1.0
0.5
2.0
1.5
VF˄V˅
2.5
0
3.0
3.0
2.5
0
20
30
40
60
70
10
RG=36Ω
VCE=600V
Tj =125°C
Diode
1
IGBT
1.5
1.0
0.1
TJ =150°C
TC =25°C
VGE =15V
tscİ10µs
0.5
0
0
10
20
30
40
0.01
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (seconds)
50
IF (A)
Figure 11: Diode Forward Characteristics
Diode- rectifier
Figure 12: Typical Output Characteristics
IGBT- brake chopper
30
50
25
40
IFGE
=25=15V
A
V
VCE=600V
TVj =125°C
20
IC (A)
30
Tj =125°C
20
Tj =25°C
15
Tj =125°C
10
10
0
50
Figure 10: Transient Thermal Impedance of
Diode and IGBT-inverter
2.0
IF (A)
10
RG˄Ω˅
Figure 9: Switching Energy vs. Forward Current
Diode-inverter
Erec (mJ)
IF=25A
VCE=600V
Tj =125°C
2.5
5
Tj =25°C
0
MG1225H-XBN2MM
0.2
0.4
0
0
0.6 0.8 1.0 1.2 1.4 1.6
VF˄V˅
6
213
0.5
1.0
1.5 2.0
VCE˄V˅
2.5
3.0
3.5
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:10/05/16
Power Module
1200V 25A IGBT Module
Figure 14: N
TC Characteristics
Figure 13: Diode Forward Characteristics
Diode - brake chopper
30
100000
25
IF (A)
20
10000
Tj =25°C
R
15
10
Tj =125°C
1000
5
0
0
0.4
0.8
1.2 1.6
VF˄V˅
2.0
2.4
100
0
2.8
20
40
80 100 120 140 160
60
TC˄°C˅
Circuit Diagram
Dimensions-Package H
The foot pins are in gold / nickel coating
MG1225H-XBN2MM
7
214
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:10/05/16
Power Module
1200V 25A IGBT Module
Packing Options
Part Number
Marking
Weight
Packing Mode
M.O.Q
MG1225H-XBN2MM
MG1225H-XBN2MM
180g
Bulk Pack
40
Part Marking System
Part Numbering System
MG12 25 H - XB N2 MM
PRODUCT TYPE
M: Power Module
MODULE TYPE
G: IGBT
VOLTAGE RATING
12: 1200V
CURRENT RATING
ASSEMBLY SITE
MG1225H-XBN2MM
WAFER TYPE
CIRCUIT TYPE
LOT NUMBER
Space
reserved
for QR
code
PACKAGE TYPE
25: 25A
MG1225H-XBN2MM
8
215
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:10/05/16
