MG1250S-BA1MM

Power Module 1200V 50A IGBT Module MG1250S-BA1MM RoHS ® Features • Ultra Low Loss • P  ositive Temperature Coefficient • High Ruggedness • W  ith Fast Free-Wheeling Diodes • H  igh Short Circuit Capability Applications • SMPS and UPS • Converter • Induction Heating • Welder Agency Approvals AGENCY • Inverter AGENCY FILE NUMBER E71639 Module Characteristics (TC = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Max Unit Junction-to-Case Thermal Resistance Per IGBT 0.3 K/W Per Inverse Diode 0.6 K/W Torque Module-to-Sink Recommended (M6) 3 5 N·m Torque Module Electrodes Recommended (M5) 2.5 5 N·m RthJC RthJCD Weight Min Typ 150 g Values Unit V Absolute Maximum Ratings (TC = 25°C, unless otherwise specified) Symbol Parameters Test Conditions IGBT VCES Collector - Emitter Voltage 1200 VGES Gate - Emitter Voltage ±20 V 80 A A IC ICpuls TC=25°C DC Collector Current Pulsed Collector Current TC=80°C 50 TC=25°C, tp=1ms 170 TC=80°C, tp=1ms 110 A Ptot Power Dissipation Per IGBT 500 W TJ Junction Temperature Range -40 to +150 °C TSTG Storage Temperature Range -40 to +125 °C Visol Insulation Test Voltage 3000 V AC, t=1min Diode VRRM IF(AV) IF(RMS) IFSM Repetitive Reverse Voltage 1200 V TC=25°C 90 A TC=80°C 60 A 90 A TJ =45°C, t=10ms, Sine 430 TJ =45°C, t=8.3ms, Sine 450 Average Forward Current RMS Forward Current Non-Repetitive Surge Forward Current A Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. MG1250S-BA1MM 1 43 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15 Power Module 1200V 50A IGBT Module Electrical and Thermal Specifications (TC = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max Unit Gate - Emitter Threshold Voltage VCE=VGE, IC=2mA 5.0 6.2 7.0 V Collector - Emitter Saturation Voltage IC=50A, VGE=15V, TJ=25°C 1.8 IC=50A, VGE=15V, TJ=125°C 2.0 IGBT VGE(th) VCE(sat) VCE=1200V, VGE=0V, TJ=25°C ICES Collector Leakage Current IGES Gate Leakage Current VCE=0V,VGE=±20V Qge Gate Charge VCC=600V, IC=50A , VGE=±15V Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance tr Rise Time td(off) Turn - off Delay Time Fall Time Eon Turn - on Energy Eoff 2 -200 mA mA 200 611 nA nC 4.29 VCE=25V, VGE=0V, f =1MHz nF 0.30 0.20 VCC=600V IC=50A RG =18Ω tf V 0.5 VCE=1200V, VGE=0V, TJ=125°C Turn - on Delay Time td(on) V VGE=±15V Inductive Load Turn - off Energy TJ =25°C 270 ns TJ =125°C 290 ns TJ =25°C 60 ns TJ =125°C 60 ns TJ =25°C 480 ns TJ =125°C 550 ns TJ =25°C 60 ns TJ =125°C 65 ns TJ =25°C 6.0 mJ TJ =125°C 8.4 mJ TJ =25°C 3.7 mJ TJ =125°C 5.8 mJ Diode VF Forward Voltage trr Reverse Recovery Time IRRM Max. Reverse Recovery Current Qrr Reverse Recovery Charge MG1250S-BA1MM IF=50A , VGE=0V, TJ =25°C 1.9 2.3 IF=50A , VGE=0V, TJ =125°C 1.7 2.1 IF=50A , VR=800V diF/dt=-1000A/μs TJ =125°C 180 2 44 V V nS 60 A 7.1 μC ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15 Power Module 1200V 50A IGBT Module Figure 1: Typical Output Characteristics Figure 2: T  ypical Transfer characteristics 100 100 80 80 VCE=20V 60 IC (A) IC (A) TJ =25°C TJ =125°C 40 60 40 TJ =125°C 20 20 TJ =25°C 0 0 0.5 1 1.5 2.5 2 VCE(sat)˄V˅ 3 0 3.5 Figure 3: Switching Energy vs. Collector Current 4 6 8 VGE˄V˅ 10 12 14 Figure 4: Switching Energy vs. Gate Resistor 18 60 VCC=600V RG=18ohm VGE=±15V TJ =125°C 40 12 30 Eon 20 10 25 50 75 100 IC˄A˅ Eon 9 6 Eoff 3 Eoff 0 0 VCC=600V IC=50A VGE=±15V TJ =125°C 15 Eon Eoff (mJ) 50 Eon Eoff (mJ) 2 0 125 150 0 175 Figure 5: Switching Times vs. Collector Current 0 10 20 30 40 50 RG˄ohm˅ 60 70 Figure 6: Switching Times vs. Gate Resistor 103 3 10 td(off) td(off) 102 td(on) t (ns) t (ns) td(on) tf 2 10 tf tr tr 10 0 MG1250S-BA1MM VCC=600V RG=18ohm VGE=±15V TJ =125°C 20 40 60 80 I ˄A˅ 100 120 10 140 3 45 VCC=600V IC=50A VGE=±15V TJ =125°C 0 10 20 30 40 50 RG˄ohm˅ 60 70 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15 Power Module 1200V 50A IGBT Module Figure 7: Gate Charge characteristics Figure 8: Typical Capacitances vs. VCE 25 10 VCC=600V IC=50A TJ =25°C 20 Cies C (nF) VGE (V) 15 10 VGE =0V f=1MHz 1 Coes Cres 5 0 0 0.1 0.2 0.3 Qg˄µC˅ 0.4 0.1 0.5 160 800 120 600 ICsc (A) ICpuls (A) 1000 80 TJ =150°C TC =25°C VGE =15V 200 400 10 15 20 25 30 35 Figure 10: Short Circuit Safe Operating Area 200 0 0 5 VCE˄V˅ Figure 9: Reverse Biased Safe Operating Area 40 0 400 TJ =150°C TC =25°C VGE =15V tscİ10µs 200 0 600 800 1000 1200 1400 VCE˄V˅ Figure 11: Rated Current vs. TC 0 200 400 600 800 1000 1200 1400 VCE˄V˅ Figure 12: Diode Forward Characteristics 150 100 TJ =150°C VGE ı15V 80 125 100 60 IF (A) IC(A) TJ =125°C 40 50 TJ =25°C 20 0 0 MG1250S-BA1MM 75 25 25 0 50 75 100 125 150 175 TC Case Temperature(°C) 4 46 0 0.5 1.0 1.5 2.0 2.5 VF˄V˅ 3 3.5 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15 Power Module 1200V 50A IGBT Module Figure 13: Transient Thermal Impedance of IGBT Figure 14: Transient Thermal Impedance of Diode 1 1 -1 10-1 -2 10 Duty 0.5 0.2 0.1 0.05 Single Pulse ZthJC (K/W) ZthJC (K/W) 10 Duty 0.5 0.2 0.1 0.05 Single Pulse 10-2 -3 10-3 -4 10-4 -4 10 10-3 10-2 10-1 1 Rectangular Pulse Duration (seconds) 10 10 10-4 10-3 10-2 10-1 1 Rectangular Pulse Duration (seconds) Dimensions-Package S Circuit Diagram 1 3 2 4 MG1250S-BA1MM 5 47 5 6 7 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15 Power Module 1200V 50A IGBT Module Packing Options Part Number Marking Weight Packing Mode M.O.Q MG1250S-BA1MM MG1250S-BA1MM 150g Bulk Pack 100 Part Marking System Part Numbering System MG12 50 S - B A1 MM PRODUCT TYPE M: Power Module ASSEMBLY SITE MG1250S-BA1MM WAFER TYPE MODULE TYPE G: IGBT VOLTAGE RATING 12: 1200V CIRCUIT TYPE 2x(IGBT+FWD) CURRENT RATING PACKAGE TYPE LOT NUMBER Space reserved for QR code 50: 50A MG1250S-BA1MM 6 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15