MG1250W-XBN2MM

Power Power ModuleModule 1200V 50A IGBT Module MG1250W-XBN2MM RoHS Features  igh level of • H integration—only one power semiconductor module required for the whole drive  ree wheeling diodes • F with fast and soft reverse recovery  ow saturation voltage • L and positive temperature coefficient • Industry standard package with insulated copper base plate and soldering pins for PCB mounting  ast switching and short • F tail current  emperature sense • T included Applications • AC motor control • Motion/servo control • Inverter and power supplies Module Characteristics (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max. Junction Temperature TJ max) Max Unit 150 °C TJ op Operating Temperature -40 125 °C Tstg Storage Temperature -40 125 °C Visol Insulation Test Voltage CTI Comparative Tracking Index Md Mounting Torque AC, t=1min 3000 V 250 Recommended (M5) Weight 2.5 5 N·m 300 g Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Values Unit TJ=25°C 1200 V ±20 V TC=25°C 75 A TC=80°C 50 A tp=1ms 100 A 260 W IGBT VCES Collector - Emitter Voltage VGES Gate - Emitter Voltage IC DC Collector Current ICM Repetitive Peak Collector Current Ptot Power Dissipation Per IGBT Diode VRRM Repetitive Reverse Voltage IF(AV) Average Forward Current IFRM Repetitive Peak Forward Current I 2t MG1250W-XBN2MM TJ=25°C 1200 V TC=25°C 75 A TC=80°C 50 A tp=1ms 100 A TJ =125°C, t=10ms, VR=0V 680 A 2s 247 1 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:12/04/14 Power Power ModuleModule 1200V 50A IGBT Module Electrical and Thermal Specifications (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max Unit Gate - Emitter Threshold Voltage VCE=VGE, IC=2.0mA 5.0 5.8 6.5 V Collector - Emitter IC=50A, VGE=15V, TJ=25°C 1.7 V Saturation Voltage IC=50A, VGE=15V, TJ=125°C 1.9 V IGBT VGE(th) VCE(sat) IICES Collector Leakage Current IGES Gate Leakage Current RGint Integrated Gate Resistor Qge Gate Charge Cies Input Capacitance Cres Reverse Transfer Capacitance td(on) VCE=1200V, VGE=0V, TJ=25°C 1 mA VCE=1200V, VGE=0V, TJ=125°C 10 mA 400 nA VCE=0V, VGE=±15V, TJ=125°C VCE=600V, IC=50A , VGE=±15V VCE=25V, VGE=0V, f =1MHz Turn - on Delay Time tr Rise Time td(off) Turn - off Delay Time IC=50A tf Fall Time VGE=±15V VCC=600V RG =18Ω Inductive Load Eon Turn - on Energy Eoff Turn - off Energy ISC Short Circuit Current RthJC -400 4.0 Ω 0.47 μC 3.6 nF 0.16 nF TJ=25°C 90 ns TJ=125°C 90 ns TJ=25°C 30 ns TJ=125°C 50 ns TJ=25°C 420 ns TJ=125°C 520 ns TJ=25°C 70 ns TJ=125°C 90 ns TJ=25°C 4.9 mJ TJ=125°C 6.6 mJ TJ=25°C 4.0 mJ TJ=125°C 4.9 mJ tpsc≤10μS , VGE=15V; TJ=125°C , VCC=900V 200 Junction-to-Case Thermal Resistance (Per IGBT) A 0.48 K/W Diode VF Forward Voltage tRR Reverse Recovery Time IRRM Max. Reverse Recovery Current Erec Reverse Recovery Energy RthJCD MG1250W-XBN2MM IF=50A, VGE=0V, TJ =25°C 1.65 V IF=50A, VGE=0V, TJ =125°C 1.65 V IF=50A, VR=600V diF/dt=1200A/µs TJ=125°C 275 ns Junction-to-Case Thermal Resistance (Per Diode) 248 2 50 A 4.4 mJ 0.78 K/W ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:12/04/14 Power Power ModuleModule 1200V 50A IGBT Module Diode-Rectifier Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Values Unit VRRM Repetitive Reverse Voltage TJ=25°C 1600 V IF(AV) Average Forward Current TC=80°C 50 A IFRM Non-Repetitive Surge Forward Current TJ=45°C, t=10ms, 50Hz 350 TJ=45°C, t=8.3ms, 60Hz 385 TJ=45°C, t=10ms, 50Hz 612 TJ=45°C, t=8.3ms, 60Hz 741 I2t A A 2s Diode-Rectifier Electrical and Thermal Specifications (TJ = 25°C, unless otherwise specified) Symbol Parameters VF Forward Voltage IR Reverse Leakage Current RthJCD Junction-to-Case Thermal Resistance (Per Diode) Test Conditions Min Typ IF=50A, TJ =25°C 1.1 IF=50A, TJ =125°C 1.05 Max Unit V V VR=1600V, TJ =25°C 50 μA VR=1600V, TJ =125°C 1 mA 0.68 K/W Brake-Chopper Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Values Unit TJ=25°C 1200 V ±20 V TC=25°C 55 A TC=80°C 40 A tp=1ms 80 A 195 W TJ=25°C 1200 V TC=25°C 25 A TC=80°C 15 A IGBT VCES Collector - Emitter Voltage VGES Gate - Emitter Voltage IC DC Collector Current ICM Repetitive Peak Collector Current Ptot Power Dissipation Per IGBT Diode VRRM Repetitive Reverse Voltage IF(AV) Average Forward Current IFRM Repetitive Peak Forward Current I2t MG1250W-XBN2MM tp=1ms 30 A TJ =125°C, t=10ms, VR=0V 60 A 2s 249 3 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:12/04/14 Power Power ModuleModule 1200V 50A IGBT Module Brake-Chopper Electrical and Thermal Characteristics (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max Unit Gate - Emitter Threshold Voltage VCE=VGE, IC=1.5mA 5.0 5.8 6.5 V Collector - Emitter IC=40A, VGE=15V, TJ=25°C 1.8 V Saturation Voltage IC=40A, VGE=15V, TJ=125°C 2.05 V IGBT VGE(th) VCE(sat) IICES Collector Leakage Current IGES Gate Leakage Current RGint Integrated Gate Resistor Qge Gate Charge Cies Input Capacitance Cres Reverse Transfer Capacitance td(on) VCE=1200V, VGE=0V, TJ=25°C VCE=1200V, VGE=0V, TJ=125°C VCE=0V, VGE=±15V, TJ=125°C VCE=600V, IC=40A , VGE=±15V VCE=25V, VGE=0V, f =1MHz Turn - on Delay Time tr Rise Time VCC=600V td(off) Turn - off Delay Time IC=40A RG =27Ω tf Fall Time VGE=±15V Inductive Load Eon Turn - on Energy Eoff Turn - off Energy ISC Short Circuit Current RthJC Junction-to-Case Thermal Resistance (Per IGBT) -400 0.25 μA 2 mA 400 nA 6 Ω 0.33 μC 2.5 nF 0.11 nF TJ =25°C 90 ns TJ =125°C 90 ns TJ =25°C 30 ns TJ =125°C 50 ns TJ =25°C 420 ns TJ =125°C 520 ns ns TJ =25°C 70 TJ =125°C 90 ns TJ =25°C 4.1 mJ TJ =125°C 6.0 mJ TJ =25°C 3.1 mJ TJ =125°C 3.6 mJ 160 A tpsc≤10μS, VGE=15V; TJ=125°C, VCC=900V 0.62 K/W Diode VF Forward Voltage tRR Reverse Recovery Time IRRM Max. Reverse Recovery Current Erec Reverse Recovery Energy RthJCD Junction-to-Case Thermal Resistance (Per Diode) IF=15A , VGE=0V, TJ =25°C 1.65 V IF=15A , VGE=0V, TJ =125°C 1.75 V IF=15A, VR=600V diF/dt=-400A/µs TJ=125°C 150 ns 15 A 1.15 mJ 1.55 K/W Max Unit NTC Characteristics (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions R25 Resistance Tc=25°C B25/50 MG1250W-XBN2MM 250 4 Min Typ 5 KΩ 3375 K ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:12/04/14 Power Power ModuleModule 1200V 50A IGBT Module Figure 1: Typical Output Characteristics for IGBT Inverter Figure 2: Typical Output Characteristics for IGBT Inverter 100 100 VGE =19V VGE =17V VGE =15V VGE =13V VGE =11V VGE = 9V VGE =15V 80 Tj =25°C 60 IC (A) IC (A) 80 40 60 40 Tj =125°C 20 20 0 0 0.5 1.0 1.5 2.0 VCE˄V˅ 2.5 3.0 0 3.5 Figure 3: T  ypical Transfer Characteristics for IGBT Inverter 12 VCE =20V 40 Eon Eoff (mJ) IC (A) Tj =25°C 60 VCE=600V IC=50A VGE=±15V Tj =125°C 10 80 Tj =125°C 20 8 Eon 6 4 Eoff 2 0 5 6 7 9 8 VGE˄V˅ 10 11 0 12 Figure 5: Switching Energy vs. Collector Current for IGBT Inverter 20 16 10 20 RG˄Ω˅ 30 40 120 VCE=600V RG=18Ω VGE=±15V Tj =125°C 100 80 12 Eon 8 60 RG= 18Ω VGE=±15V Tj =125°C 40 Eoff 4 0 0 0 Figure 6: Reverse Biased Safe Operating Area for IGBT Inverter IC (A) Eon Eoff (mJ) 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VCE˄V˅ Figure 4: Switching Energy vs. Gate Resistor for IGBT Inverter 100 MG1250W-XBN2MM TJ =125°C 30 20 40 60 IC˄A˅ 80 0 100 251 5 0 200 400 600 800 1000 1200 1400 VCE˄V˅ ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:12/04/14 Power Power ModuleModule 1200V 50A IGBT Module Figure 7: Diode Forward Characteristics for Diode Inverter Figure 8: Switching Energy vs. Gate Resistort for Diode Inverter 100 8.0 6.0 Erec (mJ) IF (A) 80 IF=50A VCE=600V Tj =125°C 60 4.0 40 Tj =125°C 2.0 20 Tj =25°C 0 0 0.5 1.0 1.5 V ˄V˅ 2.0 0 2.5 0 10 20 F Figure 9: Switching Energy vs. Forward Current for Diode Inverter 1 RG=18Ω VCE=600V Tj =125°C Diode IGBT ZthJC (K/W) Erec (mJ) 40 Figure 10: Transient Thermal Impedance of Diode and IGBT Inverter 8.0 6.0 30 RG˄Ω˅ 4.0 0.1 2.0 0 0 20 40 60 80 0.01 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (seconds) 100 IF (A) Figure 11: Diode Forward Characteristics for IGBT Inverter Figure 12: Typical Output Characteristics for IGBT Brake Chopper 80 100 VGE =15V 80 60 Tj =25°C IC (A) IF (A) 60 Tj =125°C 40 40 Tj =125°C 20 20 Tj =25°C 0 MG1250W-XBN2MM 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VF˄V˅ 252 6 0.5 1.0 1.5 2.0 VCE˄V˅ 2.5 3.0 3.5 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:12/04/14 Power Power ModuleModule 1200V 50A IGBT Module Figure 13: Diode Forward Characteristics for Diode Brake Chopper Figure 14: NTC Characteristics 100000 30 IFGE =25=15V A V VCE=600V TVj =125°C 25 10000 Tj =25°C 15 10 TVj =25°C R (¡) IF (A) 20 R TVj =125°C 1000 Tj =125°C 5 0 0 0.4 0.8 1.2 1.6 VF˄V˅ 2.0 2.4 100 0 2.8 20 40 60 80 100 120 140 160 TC˄°C˅ Circuit Diagram Part Marking System Part Numbering System MG1250 W-XBN2MM PRODUCT TYPE M: Power Module MODULE TYPE G: IGBT VOLTAGE RATING 12: 1200V CURRENT RATING 50: 50A MG1250W-XBN2MM ASSEMBLY SITE MG1250W-XBN2MM WAFER TYPE CIRCUIT TYPE XB: XB LOT NUMBER Space reserved for QR code PACKAGE TYPE W: Package W 253 7 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:12/04/14 Power Power ModuleModule 1200V 50A IGBT Module Packing Options Part Number Marking Weight Packing Mode M.O.Q MG1250W-XBN2MM MG1250W-XBN2MM 300g Bulk Pack 20  Dimensions-Package W                                                             $    Ø                     Dimensions (mm) MG1250W-XBN2MM 254 8 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:12/04/14