MG1275S-BA1MM

Power Module 1200V 75A IGBT Module MG1275S-BA1MM RoHS ® Features • Ultra Low Loss • P  ositive Temperature Coefficient • High Ruggedness • W  ith Fast Free-Wheeling Diodes • H  igh Short Circuit Capability Applications • SMPS and UPS • Converter • Induction Heating • Welder Agency Approvals AGENCY • Inverter AGENCY FILE NUMBER E71639 Module Characteristics (TC = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Max Unit Junction-to-Case Thermal Resistance Per IGBT 0.2 K/W Per Inverse Diode 0.5 K/W Torque Module-to-Sink Recommended (M6) 3 5 N·m Torque Module Electrodes Recommended (M5) 2.5 5 N·m RthJC RthJCD Weight Min Typ 150 g Values Unit V Absolute Maximum Ratings (TC = 25°C, unless otherwise specified) Symbol Parameters Test Conditions IGBT VCES Collector - Emitter Voltage 1200 VGES Gate - Emitter Voltage ±20 V 105 A A IC ICpuls TC=25°C DC Collector Current Pulsed Collector Current TC=80°C 75 TC=25°C, tp=1ms 210 TC=80°C, tp=1ms 150 A Ptot Power Dissipation Per IGBT 630 W TJ Junction Temperature Range -40 to +150 °C TSTG Storage Temperature Range -40 to +125 °C Visol Insulation Test Voltage 3000 V AC, t=1min Diode VRRM IF(AV) IF(RMS) IFSM Repetitive Reverse Voltage 1200 V TC=25°C 90 A TC=80°C 60 A 90 A TJ =45°C, t=10ms, Sine 430 TJ =45°C, t=8.3ms, Sine 450 Average Forward Current RMS Forward Current Non-Repetitive Surge Forward Current A Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. MG1275S-BA1MM 1 56 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15 Power Module 1200V 75A IGBT Module Electrical and Thermal Specifications (TC = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max Unit Gate - Emitter Threshold Voltage VCE=VGE, IC=3mA 5.0 6.2 7.0 V Collector - Emitter Saturation Voltage IC=75A, VGE=15V, TJ=25°C 1.8 IC=75A, VGE=15V, TJ=125°C 2.0 VCE=1200V, VGE=0V, TJ=25°C 0.2 IGBT VGE(th) VCE(sat) ICES Collector Leakage Current IGES Gate Leakage Current VCE=0V,VGE=±20V VCC=600V, IC=75A , VGE=±15V Qge Gate Charge Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance td(on) Turn - on Delay Time tr Rise Time td(off) Turn - off Delay Time VCE=1200V, VGE=0V, TJ=125°C Fall Time Eon Turn - on Energy Eoff V 0.5 2 -100 mA mA 100 780 nA nC 5.52 VCE=25V, VGE=0V, f =1MHz 0.4 nF 0.26 VCC=600V IC=75A RG =15Ω tf V VGE=±15V Inductive Load Turn - off Energy TJ =25°C 150 ns TJ =125°C 160 ns TJ =25°C 65 ns TJ =125°C 65 ns TJ =25°C 440 ns TJ =125°C 500 ns TJ =25°C 55 ns TJ =125°C 70 ns TJ =25°C 7.45 mJ TJ =125°C 10.3 mJ TJ =25°C 4.9 mJ TJ =125°C 7.8 mJ Diode VF Forward Voltage trr Reverse Recovery Time IRRM Max. Reverse Recovery Current Qrr Reverse Recovery Charge MG1275S-BA1MM IF=75A , VGE=0V, TJ =25°C 2.0 2.48 V IF=75A , VGE=0V, TJ =125°C 1.7 2.2 V IF=75A , VR=800V diF/dt=-1000A/μs TJ =125°C 200 ns 70 A 8.2 μC 1 57 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15 Power Module 1200V 75A IGBT Module Figure 1: Typical Output Characteristics Figure 2: T  ypical Transfer characteristics 150 150 125 125 100 TJ =25°C IC (A) IC (A) 100 75 TJ =125°C 50 75 50 TJ =125°C 25 0 0 25 0.5 1 1.5 2.5 2 VCE(sat)˄V˅ 3.5 3 0 Figure 3: Switching Energy vs. Collector Current VCC=600V RG=15ohm VGE=±15V TJ =125°C 2 4 6 8 VGE˄V˅ 20 Eon 20 10 12 14 50 75 100 IC˄A˅ 125 150 10 Eoff 5 0 175 Figure 5: Switching Times vs. Collector Current Eon 15 Eoff 10 25 VCC=600V IC=75A VGE=±15V TJ =125°C 25 30 0 0 0 30 Eon Eoff (mJ) Eon Eoff (mJ) 40 TJ =25°C Figure 4: Switching Energy vs. Gate Resistor 60 50 VCE=20V 0 10 20 30 40 50 RG˄ohm˅ 70 60 Figure 6: Switching Times vs. Gate Resistor 1000 1000 td(off) 100 td(on) t (ns) t (ns) td(off) td(on) 100 tf tf tr tr 10 0 MG1275S-BA1MM 20 VCC=600V RG=15ohm VGE=±15V TJ =125°C 40 60 80 IC˄A˅ 100 120 140 10 3 58 VCC=600V IC=75A VGE=±15V TJ =125°C 0 10 20 30 40 50 RG˄ohm˅ 60 70 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15 Power Module 1200V 75A IGBT Module Figure 7: Gate Charge characteristics Figure 8: Typical Capacitances vs. VCE 25 10 VCC=600V IC=75A TJ =25°C 20 Cies VGE =0V f=1MHz C (nF) VGE (V) 15 10 1 Coes Cres 5 0 0 0.1 0.2 0.3 0.4 0.5 Qg˄µC˅ 0.6 0.1 0.7 10 15 20 25 30 35 Figure 10: Short Circuit Safe Operating Area 250 1200 200 1000 800 ICsc (A) 150 100 0 0 200 400 600 400 TJ =150°C TC =25°C VGE =15V 50 TJ =150°C TC =25°C VGE =15V tscİ10µs 200 0 600 800 1000 1200 1400 VCE˄V˅ Figure 11: Rated Current vs. TC 0 TJ =150°C VGE ı15V 125 100 100 TJ =125°C IF (A) 75 75 50 50 25 25 MG1275S-BA1MM 400 600 800 1000 1200 1400 VCE˄V˅ 150 125 0 0 200 Figure 12: Diode Forward Characteristics 150 IC(A) 5 VCE˄V˅ Figure 9: Reverse Biased Safe Operating Area ICpuls (A) 0 TJ =25°C 25 0 50 75 100 125 150 175 TC Case Temperature(°C) 4 59 0 0.5 1.0 1.5 2.0 2.5 VF˄V˅ 3 3.5 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15 Power Module 1200V 75A IGBT Module Figure 13: Transient Thermal Impedance of IGBT Figure 14: Transient Thermal Impedance of Diode 1 1 -1 -1 10 -2 10 Duty 0.5 0.2 0.1 0.05 Single Pulse ZthJC (K/W) ZthJC (K/W) 10 10-2 10-3 10 -4 10 10 Duty 0.5 0.2 0.1 0.05 Single Pulse -3 -4 -3 10-4 10-2 10-1 1 10 Rectangular Pulse Duration (seconds) Dimensions-Package S -1 10-4 10-3 10-2 10 1 Rectangular Pulse Duration (seconds) Circuit Diagram 1 3 2 4 MG1275S-BA1MM 5 60 5 6 7 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15 Power Module 1200V 75A IGBT Module Packing Options Part Number Marking Weight Packing Mode M.O.Q MG1275S-BA1MM MG1275S-BA1MM 150g Bulk Pack 100 Part Marking System Part Numbering System MG12 75 S - B A1 MM PRODUCT TYPE M: Power Module ASSEMBLY SITE WAFER TYPE MODULE TYPE G: IGBT VOLTAGE RATING 06: 600V CIRCUIT TYPE 2x(IGBT+FWD) CURRENT RATING PACKAGE TYPE MG1275S-BA1MM 75: 75A LOT NUMBER MG1275S-BA1MM 6 61 Space reserved for QR code ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15