MG1275W-XN2MM

Power Module 1200V 75A IGBT Module MG1275W-XN2MM RoHS Features • High level of integration • IGBT CHIP(Trench+Field Stop technology) 3 • L  ow saturation voltage and positive temperature coefficient • F  ast switching and short tail current • F  ree wheeling diodes with fast and soft reverse recovery • S  olderable pins for PCB mounting • T  emperature sense included Applications • AC motor control • Motion/servo control • Inverter and power supplies Module Characteristics (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max. Junction Temperature TJ max) Max Unit 150 °C TJ op Operating Temperature -40 125 °C Tstg Storage Temperature -40 125 °C Visol Insulation Test Voltage CTI Comparative Tracking Index Md Mounting Torque AC, t=1min 3000 V 250 Recommended (M5) Weight 2.5 5 N·m 300 g Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Values Unit TJ=25°C 1200 V ±20 V TC=25°C 105 A TC=80°C 75 A tp=1ms 150 A 368 W IGBT VCES Collector - Emitter Voltage VGES Gate - Emitter Voltage IC DC Collector Current ICM Repetitive Peak Collector Current Ptot Power Dissipation Per IGBT Diode VRRM Repetitive Reverse Voltage IF(AV) Average Forward Current IFRM Repetitive Peak Forward Current I2t MG1275W-XN2MM TJ=25°C 1200 V TC=25°C 105 A TC=80°C 75 A tp=1ms 150 A TJ =125°C, t=10ms, VR=0V 1150 A2s 226 1 ©2014 Littelfuse, Inc Specifications are subject to change without notice. Revised:12/04/14 Power Module 1200V 75A IGBT Module Electrical and Thermal Specifications (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max Unit Gate - Emitter Threshold Voltage VCE=VGE, IC=3.0mA 5.0 5.8 6.5 V Collector - Emitter IC=75A, VGE=15V, TJ=25°C 1.7 V Saturation Voltage IC=75A, VGE=15V, TJ=125°C 1.9 V IGBT VGE(th) VCE(sat) IICES Collector Leakage Current IGES Gate Leakage Current RGint Integrated Gate Resistor Qge Gate Charge Cies Input Capacitance Cres Reverse Transfer Capacitance td(on) VCE=1200V, VGE=0V, TJ=25°C 1 mA VCE=1200V, VGE=0V, TJ=125°C 10 mA 400 nA VCE=0V, VGE=±15V, TJ=125°C VCE=600V, IC=75A , VGE=±15V VCE=25V, VGE=0V, f =1MHz Turn - on Delay Time tr Rise Time td(off) Turn - off Delay Time IC=75A tf Fall Time VGE=±15V VCC=600V RG =4.7Ω Inductive Load Eon Turn - on Energy Eoff Turn - off Energy ISC Short Circuit Current RthJC -400 10 Ω 0.7 μC 5.3 nF 0.2 nF TJ=25°C 260 ns TJ=125°C 290 ns TJ=25°C 30 ns TJ=125°C 50 ns TJ=25°C 420 ns TJ=125°C 520 ns TJ=25°C 70 ns TJ=125°C 90 ns TJ=25°C 6.6 mJ TJ=125°C 9.4 mJ TJ=25°C 6.8 mJ TJ=125°C 8.0 mJ tpsc≤10μS , VGE=15V; TJ=125°C , VCC=900V 300 Junction-to-Case Thermal Resistance (Per IGBT) A 0.34 K/W Diode VF Forward Voltage tRR Reverse Recovery Time IRRM Max. Reverse Recovery Current Erec Reverse Recovery Energy RthJCD IF=75A, VGE=0V, TJ =25°C 1.65 V IF=75A, VGE=0V, TJ =125°C 1.65 V IF=75A, VR=600V diF/dt=2000A/µs TJ=125°C 300 ns 85 A 6.5 mJ Junction-to-Case Thermal Resistance (Per Diode) 0.56 K/W Max Unit NTC Characteristics (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions R25 Resistance Tc=25°C B25/50 MG1275W-XN2MM 227 2 Min Typ 5 KΩ 3375 K ©2014 Littelfuse, Inc Specifications are subject to change without notice. Revised:12/04/14 Power Module 1200V 75A IGBT Module Figure 1: Typical Output Characteristics for IGBT Inverter Figure 2: Typical Output Characteristics for IGBT Inverter 150 150 VGE =19V VGE =17V VGE =15V VGE =13V VGE =11V VGE = 9V VGE =15V 120 Tj =25°C 90 IC (A) IC (A) 120 60 90 TJ =125°C 60 Tj =125°C 30 30 0 0 0.5 1.0 1.5 2.0 VCE˄V˅ 2.5 3.0 0 3.5 Figure 3: T  ypical Transfer Characteristics for IGBT Inverter 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VCE˄V˅ Figure 4: Switching Energy vs. Gate Resistor for IGBT Inverter 150 25 VCE=600V IC=75A VGE=±15V Tj =125°C VCE =20V 20 Tj =25°C 90 60 Eon Eoff (mJ) IC (A) 120 Tj =125°C 0 5 6 7 9 8 VGE˄V˅ 10 11 10 0 12 Figure 5: Switching Energy vs. Collector Current for IGBT Inverter 30 25 Eoff 10 20 30 RG˄Ω˅ 40 50 180 VCE=600V RG=4.7Ω VGE=±15V Tj =125°C 150 120 20 15 Eon 10 90 RG=4.7Ω VGE=±15V Tj =125°C 60 Eoff 30 5 0 0 0 Figure 6: R  everse Biased Safe Operating Area for IGBT Inverter IC (A) Eon Eoff (mJ) 15 5 30 MG1275W-XN2MM Eon 30 60 90 IC˄A˅ 120 0 150 228 3 0 200 400 600 800 1000 1200 1400 VCE˄V˅ ©2014 Littelfuse, Inc Specifications are subject to change without notice. Revised:12/04/14 Power Module 1200V 75A IGBT Module Figure 7: Diode Forward Characteristics for Diode Inverter Figure 8: S  witching Energy vs. Gate Resistort for Diode Inverter 150 10.0 8.0 Erec (mJ) IF (A) 120 IF=75A VCE=600V Tj =125°C 90 60 6.0 4.0 Tj =125°C 30 2.0 Tj =25°C 0 0 0.5 1.0 1.5 V ˄V˅ 2.0 0 2.5 0 10 Figure 9: Switching Energy vs. Forward Current for Diode Inverter 40 50 Figure 10: Transient Thermal Impedance of Diode and IGBT Inverter 10.0 1 RG=4.7Ω VCE=600V Tj =125°C Diode ZthJC (K/W) Erec (mJ) 30 RG˄Ω˅ F 8.0 20 6.0 4.0 IGBT 0.1 2.0 0 0 60 30 90 120 0.01 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (seconds) 150 IF (A) Figure 11: NTC Characteristics 100000 IFGE =25=15V A V VCE=600V TVj =125°C 10000 R (¡) TVj =25°C R TVj =125°C 1000 100 0 MG1275W-XN2MM 20 40 60 80 100 120 140 160 TC˄°C˅ 229 4 ©2014 Littelfuse, Inc Specifications are subject to change without notice. Revised:12/04/14 Power Module 1200V 75A IGBT Module Circuit Diagram Part Marking System Part Numbering System MG1275 W-XN2MM PRODUCT TYPE M: Power Module MODULE TYPE G: IGBT VOLTAGE RATING 12: 1200V CURRENT RATING ASSEMBLY SITE WAFER TYPE MG1275W-XN2MM Lot#:xxxxxxxxx Space reserved for QR code CIRCUIT TYPE X: X PACKAGE TYPE 75: 75A MG1275W-XN2MM 230 5 ©2014 Littelfuse, Inc Specifications are subject to change without notice. Revised:12/04/14 Power Module 1200V 75A IGBT Module Packing Options Part Number Marking Weight Packing Mode M.O.Q MG1275W-XBN2MM MG1275W-XBN2MM 300g Bulk Pack 20  Dimensions-Package W                                                                 Ø    Dimensions (mm) MG1275W-XN2MM 231 6 ©2014 Littelfuse, Inc Specifications are subject to change without notice. Revised:12/04/14