Ignition IGBT
Surface Mount > 365V > NGB8207ABN
NGB8207ABN - 20 A, 365 V, N-Channel Ignition IGBT,
Pb
Description
This Logic Level Insulated Gate Bipolar Transistor (IGBT)
features monolithic circuitry integrating ESD and Over−
Voltage clamped protection for use in inductive coil
drivers applications. Primary uses include Ignition, Direct
Fuel Injection, or wherever high voltage and high current
switching is required.
Features
• Ideal for Coil−on−Plug and Driver−on−Coil Applications
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp
Limits Stress Applied to Load
20 Amps, 365 Volts
VCE(on) ≤ 1.5 V @
IC = 10A, VGE ≥ 4.5 V
• Integrated ESD Diode Protection
• Low Threshold Voltage for Interfacing Power Loads to
Logic or Microprocessor Devices
• Low Saturation Voltage
• High Pulsed Current Capability
Maximum Ratings and Thermal Characteristics
• Minimum Avalanche Energy − 500 mJ
(TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCES
365
V
Gate−Emitter Voltage
VGE
±15
V
Collector Current−Continuous
@ TC = 25°C − Pulsed
IC
20
50
ADC
AAC
Continuous Gate Current
IG
1.0
mA
Transient Gate Current
(t ≤ 2 ms, f ≤ 100 Hz)
IG
20
mA
ESD (Charged−Device Model)
ESD
2.0
kV
ESD (Human Body Model)
R = 1500 Ω, C = 100 pF
ESD
8.0
kV
ESD (Machine Model)
R = 0 Ω, C = 200 pF
ESD
500
V
165
Watts
1.1
W/°C
−55 to
+175
°C
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage
Temperature Range
PD
TJ, Tstg
• Gate Resistor (RG) = 70 Ω
• These are Pb−Free Devices
Applications
• Ignition Systems
Functional Diagram
Additional Information
Datasheet
Resources
Samples
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are
stress ratings only. Functional operation above the Recommended Operating Conditions is
not implied. Extended exposure to stresses above the Recommended Operating
Conditions may affect device reliability.
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/15/18
Ignition IGBT
Surface Mount > 365V > NGB8207ABN
Unclamped Collector−To−Emitter Avalanche Characteristics (−55° ≤ TJ ≤ 175°C)
Symbol
Value
Unit
Single Pulse Collector−to−Emitter Avalanche Energy
VCC = 50 V, VGE = 10 V, Pk IL = 16.5 A, L = 3.7 mH, Rg = 1 kΩ Starting TJ = 25°C
500
mJ
EAS
VCC = 50 V, VGE = 10 V, Pk IL = 10 A, L = 6.1 mH, Rg = 1 kΩ Starting TJ = 125°C
306
Reverse Avalanche Energy
VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C
EAS(R)
2000
mJ
Thermal Characteristics
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
0.9
°C/W
Thermal Resistance, Junction to Ambient (Note 2)
RθJA
50
°C/W
TL
275
°C
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for
5 seconds
2. When surface mounted to an FR4 board using the minimum recommended pad size.
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/15/18
Ignition IGBT
Surface Mount > 365V > NGB8207ABN
Electrical Characteristics - OFF
Characteristic
Collector−Emitter
Clamp Voltage
Symbol
BVCES
Test
Conditions
Temperature
Min
Typ
Max
IC = 2.0 mA
TJ = −40°C to
175°C
325
350
375
IC = 10 mA
TJ = −40°C to
175°C
340
365
390
TJ = 25°C
−
0.1
2.0
TJ = 25°C
−
1.0
5
TJ = 175°C
70
85
150
TJ = -40°C
−
0.25
2.5
TJ = 25°C
30
33
39
TJ = 175°C
30
36
42
TJ = −40°C
29
32
35
TJ = 25°C
0.10
0.25
0.85
TJ = 175°C
20
25
40
TJ = −40°C
−
0.03
0.3
VGE = 0 V,
VCE = 24V
Zero Gate Voltage
Collector Current
ICES
VCE = 250V
VGE = 0 V
Reverse Collector−Emitter
Clamp Voltage
Reverse Collector−Emitter
Leakage Current
BVCES (R)
ICES(R)
IC = −75 mA
VCE = −24 V
Unit
V
µA
V
mA
Gate−Emitter Clamp Voltage
BVGES
IG = ± 5.0 mA
TJ = −40°C
to 175°C
12
13
14.5
V
Gate−Emitter Leakage Current
IGES
VGE = ± 10.0 V
TJ = −40°C
to 175°C
500
700
1000
µA
Gate Resistor
RG
_
TJ = −40°C
to 175°C
−
70
−
Ω
Gate Emitter Resistor
RGE
TJ = −40°C
to 175°C
14.25
16
25
kΩ
Unit
Electrical Characteristics - ON (Note 3)
Characteristic
Gate Threshold Voltage
Symbol
VGE (th)
Threshold Temperature
Coefficient (Negative)
−
Test
Conditions
IC = 1.0 mA,
VGE = VCE
−
IC = 6.0 mA,
Collector−to−Emitter
On−Voltage
VGE (on)
VGE = 4.0 V
IC = 10 mA,
VGE = 4.5 V
Temperature
Min
Typ
Max
TJ = 25°C
1.2
1.5
2.0
TJ = 175°C
0.6
0.8
1.2
TJ = −40°C
1.4
1.7
2.0
−
12
12
12
TJ = 25°C
1.0
1.3
1.6
TJ = 175°C
0.8
1.1
1.4
TJ = −40°C
1.15
1.4
1.75
TJ = 25°C
−
0.62
1.0
*Maximum Value of Characteristic across Temperature Range.
3. Pulse Test: Pulse Width ≤ 300 µS, Duty Cycle ≤ 2%.
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/15/18
V
mV/°C
V
Ignition IGBT
Surface Mount > 365V > NGB8207ABN
Electrical Characteristics - ON (Note 4)
Characteristic
Symbol
Test
Conditions
IC = 8.0 A,
VGE = 4.0 V
IC = 10 A,
VGE = 3.7 V
IC = 10 A,
VGE = 4.0 V
Collector−to−Emitter
On−Voltage
VCE (on)
IC = 10 A,
VGE = 4.5 V
IC = 15 A,
VGE = 4.0 V
IC = 20 A,
VGE = 4.0V
Forward Transconductance
gfs
VCE = 5.0 V,
IC = 6.0 A
Temperature
Min
Typ
Max
TJ = 25°C
1.1
1.5
1.7
TJ = 175°C
1.0
1.3
1.6
TJ = −40°C
1.2
1.5
1.85
TJ = 25°C
1.2
1.6
1.9
TJ = 175°C
1.1
1.45
1.8
TJ = −40°C
1.3
1.7
2.0
TJ = 25°C
1.1
1.5
1.85
TJ = 175°C
1.1
1.4
1.75
TJ = −40°C
1.35
1.7
2.1
TJ = 25°C
1.2
1.5
1.8
TJ = 175°C
1.1
1.4
1.7
TJ = −40°C
1.2
1.6
2.0
TJ = 25°C
1.45
1.85
2.15
TJ = 175°C
1.6
1.9
2.4
TJ = −40°C
1.5
1.9
2.25
TJ = 25°C
1.6
2.1
2.6
TJ = 175°C
2.0
2.4
3.1
TJ = −40°C
1.6
2.1
2.5
TJ = 25°C
−
15.8
−
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/15/18
Unit
V
Mhos
Ignition IGBT
Surface Mount > 365V > NGB8207ABN
Dynamic Characteristics
Characteristic
Symbol
Input Capacitance
CISS
Output Capacitance
COSS
Transfer Capacitance
CRSS
Test
Conditions
Temperature
VCE = 25 V
f = 10 kHz
Min
Typ
Max
750
810
900
75
90
105
4
7
12
TJ = 25°C
Unit
pF
Switching Characteristics
Characteristic
Symbol
Turn−On Delay Time (Resistive)
Low Voltage
td (on)
Rise Time (Resistive) Low Voltage
tf
Turn−Off Delay Time (Resistive)
Low Voltage
td (off)
Fall Time (Resistive)
Low Voltage
tf
Test Conditions
VCE = 14 V
RL = 1.0 Ω
VGE = 5.0 V
RG = 1000 Ω
Temperature
Min
Typ
Max
TJ = 25°C
0.5
0.55
0.7
TJ = 25°C
2.0
2.32
2.7
TJ = 25°C
2.0
2.5
3.0
TJ = 25°C
8.0
10
13
Unit
µSec
Turn−On Delay Time (Resistive)
High Voltage
td (on)
Rise Time (Resistive)
High Voltage
tr
Turn−Off Delay Time (Resistive)
High Voltage
td (off)
Fall Time (Resistive)
High Voltage
tf
VCE = 300 V
RL = 46 Ω
VGE = 5.0 V
RG = 1000 Ω
TJ = 25°C
0.5
0.65
0.75
TJ = 25°C
0.7
1.8
2.0
TJ = 25°C
4.0
4.7
6.0
TJ = 25°C
6.0
10
15
4. Pulse Test: Pulse Width ≤ 300 µS, Duty Cycle ≤ 2%.
*Maximum Value of Characteristic across Temperature Range.
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/15/18
Ignition IGBT
Surface Mount > 365V > NGB8207ABN
Ratings and Characteristic Curves
Figure 1. Typical Self Clamped Inductive Switching
Performance (SCIS) @ 25°C
Figure 2. Typical Self Clamped Inductive Switching
Performance (SCIS) @ 150°C
50
40
70 S 40 A
510 mJ
40
35
140 S 25.6 A
660 mJ
30
25
175 S 21 A
675 mJ
20
15
10
30
25
140 S 16 A
400 mJ
20
230 S 9 A
375 mJ
15
10
5
5
0
35 S 39.8 A
250 mJ
35
PEAK CURRENT (A)
PEAK CURRENT (A)
45
0
50
100
150
200
250
0
300
0
50
100
CLAMPING TIME ( S)
Figure 5. On−Region Characteristics @ TJ = 25°C
250
Figure 4. Collector−to−Emitter Voltage vs. Junction Temp
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 3. Collector−to−Emitter Voltage vs. Collector Current
200
150
CLAMPING TIME ( S)
3.0
2.5
IC = 20 A
2.0
IC = 15 A
IC = 10 A
1.5
IC = 6.0 A
1.0
IC = 8.0 A
0.5
0
50
25
0
25
50
75
100
125
150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Region Characteristics @ TJ = -40°C
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/15/18
Ignition IGBT
Surface Mount > 365V > NGB8207ABN
Figure 8. Transfer Characteristics
Figure 9. Collector−to−Emitter Leakage Current vs. Temp
Figure 10. Gate Threshold Voltage vs. Temperature
LEAKAGE CURRENT ( A)
100,000
10,000
VCE = 24 V
1000
100
VCE = 320 V
10
1
50
25
05
2
50
75
100
125
150
175
VGE(th), GATE THRESHOLD VOLTAGE (V)
Figure 7. On−Region Characteristics @ TJ = 175°C
2.0
MEAN + 4s
1.75
MEAN
1.5
MEAN 4s
1.25
1.0
0.75
0.5
50
TJ, JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Resistive Switching Time Variation vs. Temperature
100
t, TIME ( s)
Figure 11. Capacitance Variation
0
25
VCC = 300 V
VGE = 5.0 V
R G = 1000
IC = 10 A
10
tf
td(off)
tr
1
0.1
td(on)
25
50
75
100
125
150
TEMPERATURE ( °C)
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/15/18
175
Ignition IGBT
Surface Mount > 365V > NGB8207ABN
Figure 13. Inductive Switching Time Variation vs. Temperature
100
VCC = 300 V IC = 10 A
VGE = 5.0 V L = 300 H
R G = 1000
IC , COLLECTOR CURRENT (A)
t, TIME ( S)
1000
Figure 14. Forward Biased Safe Operating Area
tr
100
td(on)
tf
10
td(off)
1
VGE = 4.0 V
Single Pulse
TC = 25°C
100 s
50
75
100
125
150
175
1 ms
10 ms
VCE(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
0.1
25
10 s
10
dc
Mounted on 2
� sq. FR4 board (1� sq.
2 oz. Cu 0.06� thick single sided)
11
0
100
1000
VCE , COLLECTOR EMITTER VOLTAGE (V)
TEMPERATURE ( °C)
Figure 15. Best Case Transient Thermal Resistance (Non−normalized Junction−to−Case Mounted on Cold Plate)
1
0.2
0.1
°
0.1
0.02
0.01
0.000001
1
t1
t2
0.01
1 2
0.00001
0.0001
0.001
0.01
0.1
1
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/15/18
Ignition IGBT
Surface Mount > 365V > NGB8207ABN
Soldering Footrpint
Dimensions
8.38
0.33
1.016
0.04
10.66
0.42
0.13 (0.005)
M
T B
M
17.02
0.67
5.08
0.20
3.05
0.12
SCALE 3:1
mm
inches
K
Part Marking System
4
Collector
Dim
Inches
Millimeters
Min
Max
Min
Max
A
0.340
0.380
8.64
9.65
B
0.380
0.405
9.65
10.29
C
0.160
0.190
4.06
4.83
D
0.020
0.035
0.51
0.89
E
0.045
0.055
1.14
1.40
F
0.310
0.350
7.87
8.89
G
0.100 BSC
0.080
0.110
2.03
2.79
J
0.018
0.025
0.46
0.64
K
0.090
0.110
2.29
2.79
L
0.052
0.072
1.32
1.83
M
0.280
0.320
7.11
8.13
N
0.197 REF
5.00 REF
P
0.079 REF
2.00 REF
0.039 REF
1
Gate
3
Emitter
2
Collector
NGB8207B = Device Code
NGB8207ABN
A=
Y=
WW
G=
Assembly Location
Year
= Work Week
Pb Free Package
2.54 BSC
H
R
NGB LF
8207BG
8207ABNG
AYWW
ORDERING INFORMATION
Device
Package
Shipping†
NGB8207BNT4G
D2PAK
(Pb−Free)
800 /
Tape & Reel
0.99 REF
S
0.575
0.625
14.60
15.88
V
0.045
0.055
1.14
1.40
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04.
Disclaimer Notice - Information furnished is believed to be accurate and
reliable. However, users should independently evaluate the suitability of and
test each product selected for their own applications. Littelfuse products are
not designed for, and may not be used in, all applications. Read complete
Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics.
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/15/18
