NGD15N41ACLT4G

Ignition IGBT Surface Mount > 410V > NGx15N41 NGD15N41ACL, NGB15N41ACL, NGP15N41ACL - 15 A, 410 V, N-Channel Ignition IGBT, DPAK, D2PAK and TO-220 Description This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over− Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features • Ideal for Coil−on−Plug Applications • DPAK Package Offers Smaller Footprint and Increased Board Space • Gate−Emitter ESD Protection 15 Amps, 410 Volts VCE(on) ≤ 2.1 V @ IC = 10 A, VGE ≥ 4.5 V • Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load • Integrated ESD Diode Protection • New Design Increases Unclamped Inductive Switching (UIS) Energy Per Area Maximum Ratings (TJ = 25°C unless otherwise noted) Rating Collector−Emitter Voltage • Low Threshold Voltage to Interface Power Loads to Logic Symbol Value Unit VCES 440 VDC or Microprocessor Devices • Low Saturation Voltage • High Pulsed Current Capability • Optional Gate Resistor (RG) and Gate−Emitter Collector−Gate Voltage VCER 440 VDC Resistor (RGE) • These are Pb−Free Devices Gate−Emitter Voltage Collector Current−Continuous @ TC = 25°C − Pulsed VGE IC 15 VDC 15 ADC 50 AAC ESD (Human Body Model) R = 1500 Ω, C = 100 pF ESD 8.0 kV ESD (Machine Model) R = 0 Ω, C = 200 pF ESD 800 V 107 W 0.71 W/°C −55 to +175 °C Functional Diagram C G RG R GE E Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range PD TJ, Tstg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Additional Information Datasheet Resources Samples © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 Pb Ignition IGBT Surface Mount > 410V > NGx15N41 Unclamped Collector−To−Emitter Avalanche Characteristics (−55° ≤ TJ ≤ 175°C) Rating Symbol Value Unit EAS 250 mJ Single Pulse Collector−to−Emitter Avalanche Energy VCC = 50 V, VGE = 5.0 V, Pk IL = 16.6 A, L = 1.8 mH, Starting TC = 25°C VCC = 50 V, VGE = 5.0 V, Pk IL = 15 A, L = 1.8 mH, Starting TC = 125°C 200 Thermal Characteristics Rating Thermal Resistance, Junction to Case Symbol Value RθJC 1.4 DPAK (Note 1) Thermal Resistance, Junction to Ambient (Note 1) D2PAK (Note 1) 100 °C/W 50 RθJA TO−220 Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 5 seconds Unit 62.5 TL °C 275 Electrical Characteristics - OFF Characteristic Collector−Emitter Clamp Voltage Zero Gate Voltage Collector Current Reverse Collector−Emitter Leakage Current Reverse Collector−Emitter Leakage Current Symbol BVCES ICES ICES BVCES(R) Test Conditions Temperature Min Typ Max IC = 2.0 mA TJ = −40°C to 150°C 380 410 440 IC = 10 mA TJ = −40°C to 150°C 380 410 440 TJ = 25°C − 2.0 20 TJ = 150°C − 10 40* TJ = −40°C − 1.0 10 TJ = 25°C − 0.7 2.0 TJ = 150°C − 12 25* TJ = −40°C − 0.1 1.0 TJ = 25°C 27 33 37 TJ = 150°C 30 36 40 TJ = −40°C 25 31 35 VCE = 350 V VGE = 0 V VCE = −24 V IC = -75 mA Unit VDC µADC mA VDC Gate−Emitter Clamp Voltage BVGES IG = 5.0 mA TJ = −40°C to 150°C 11 13 15 VDC Gate−Emitter Leakage Current IGES VGE = ±10 V TJ = −40°C to 150°C 384 640 1000 µADC Gate Resistor RG − TJ = −40°C to 150°C − 70 − Ω Gate−Emitter Resistor RGE − TJ = −40°C to 150°C 10 16 26 kΩ Gate Emitter Resistor RGE _ TJ = −40°C to 150°C 14.25 16 25 kΩ 1. When surface mounted to an FR4 board using the minimum recommended pad size. © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 Ignition IGBT Surface Mount > 410V > NGx15N41 Electrical Characteristics - ON (Note 3) Characteristic Gate Threshold Voltage Threshold Temperature Coefficient (Negative) Symbol VGE (th) − Test Conditions IC = 1.0 mA, VGE = VCE IC = 6.0 A VGE = 4.0 V, IC = 8.0 A On−Voltage VCE (on) VGE = 4.0 V, IC = 10 A VGE = 4.5 V, IC = 10 A Forward Transconductance gfs Min Typ Max TJ = 25°C 1.1 1.4 1.9 TJ = 150°C 0.75 1.0 1.4 TJ = −40°C 1.2 1.6 2.1* − − 3.4 − TJ = 25°C 1.0 1.6 1.8 TJ = 150°C 0.9 1.5 1.8 TJ = −40°C 1.1 1.65 1.9* TJ = 25°C 1.3 1.8 2.0* TJ = 150°C 1.2 1.7 1.9 TJ = −40°C 1.4 1.8 2.0* TJ = 25°C 1.4 2.0 2.2 TJ = 150°C 1.5 2.0 2.3* TJ = −40°C 1.4 2.0 2.2 TJ = 25°C 1.3 1.9 2.1 TJ = 150°C 1.3 1.9 2.1 TJ = −40°C 1.4 1.95 2.1* TJ = −40°C to 150°C 8 15 25 − VGE = 4.0 V, Collector−to−Emitter Temperature VCE = 5.0 V, IC = 6.0 A Unit VDC mV/°C VDC Mhos Dynamic Characteristics Characteristic Symbol Input Capacitance CISS Test Conditions VCE = 25 V Output Capacitance Transfer Capacitance COSS CRSS Temperature Min Typ Max 400 650 1000 30 55 100 3.0 4.5 8.0 Unit TJ = −40°C VGE = 0 V to f = 1.0 MHz 150°C © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 pF Ignition IGBT Surface Mount > 410V > NGx15N41 Switching Characteristics Characteristic Symbol Test Conditions VCC = 300 V Turn−On Delay Time (Inductive) td (off) IC = 6.5 A RG = 1.0 kΩ L = 300 µH VCC = 300 V Fall Time (Inductive) tf IC = 6.5 A RG = 1.0 kΩ L = 300 µH Turn−Off Delay Time (Resistive) VCC = 300 V, td (off) IC = 6.5 A RG = 1.0 kΩ, RL = 46 Ω, VCC = 300 V, Fall Time (Resistive) tf IC = 6.5 A RG = 1.0 kΩ, RL = 46 Ω, Turn−Off Delay Time (Inductive) VCC = 10 V, td(on) IC = 6.5 A RG = 1.0 kΩ, RL = 1.5 Ω, VCC = 10 V, Rise Time tr IC = 6.5 A RG = 1.0 kΩ, RL = 1.5 Ω, Temperature Min Typ Max TJ = 25°C − 4.0 10 TJ = 150°C − 4.5 10 TJ = 25°C − 6.0 12 TJ = 150°C − 10 12 TJ = 25°C − 3.0 10 TJ = 150°C − 3.5 10 TJ = 25°C − 8.0 15 TJ = 150°C − 12 15 TJ = 25°C − 0.7 4.0 TJ = 150°C − 0.7 4.0 TJ = 25°C − 4.0 7.0 TJ = 150°C − 5.0 7.0 µSec *Maximum Value of Characteristic across Temperature Range. 3. Pulse Test: Pulse Width ≤ 300 µS, Duty Cycle ≤ 2%. Ratings and Characteristic Curves Figure 1. Output Characteristics Unit Figure 2. Output Characteristics © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 Ignition IGBT Surface Mount > 410V > NGx15N41 Figure 3. Output Characteristics Figure 4. Transfer Characteristics Figure 5. Collector−to−Emitter Saturation Voltage vs. Junction Temp Figure 6. Collector−to−Emitter Voltage vs Gate−to−Emitter Voltage Figure 7. Collector−to−Emitter Voltage vs Gate−to−Emitter Voltage Figure 8. Capacitance Variation 10000 T J = 150 ϒC IC = 15 A 2.5 IC = 10 A 2 IC = 5 A 1.5 1 0.5 0 38 4 59 C iss 1000 C, CAPACITANCE (pF) COLLECTOR TO EMITTER VOLTAGE (VOLTS) 3 6 7 GATE TO EMITTER VOLTAGE (VOLTS) 10 100 C oss 10 C rss 1 0 0 200 40 61 80 100 120 40 160 180 V CE , COLLECTOR TO EMITTER VOLTAGE (VOLTS) © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 200 Ignition IGBT Surface Mount > 410V > NGx15N41 Figure 9. Gate Threshold Voltage vs.Temperature Figure 10. Minimal Open Secondary Latch Current vs Temperature 30 2 1.8 Mean Mean + 4 σ IL , LATCH CURRENT (AMPS) THRESHOLD VOLTAGE (VOLTS) 1.4 Mean 1.2 4 σ 1 0.8 0.6 0.4 0.2 0 50 30 10 10 50 30 70 V CC = 50 V V GE = 5 V R G = 1000 Ω 25 1.6 90 110 20 L = 6 mH 5 50 25 05 TEMPERATURE (°C) 75 100 125 150 175 12 V CC = 50 V V GE = 5 V R G = 1000 Ω V CC = 300 V V GE = 5 V R G = 1000 Ω IC = 10 A L = 300 μH 10 SWITCHING TIME ( μs) 25 IL , LATCH CURRENT (AMPS) 50 Figure 12. Inductive Switching Fall Time vs. Temperature 30 L = 2 mH 15 L = 3 mH 10 L = 6 mH 8 tf 6 td(off) 4 2 5 0 2 TEMPERATURE ( °C) Figure 11. Typical Open Secondary Latch Current vs Temperature 20 L = 3 mH 10 0 130 150 L = 2 mH 15 0 50 25 05 2 50 75 TEMPERATURE ( °C) 100 125 150 175 50 30 10 10 30 50 70 90 110 130 150 TEMPERATURE (°C) © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 Ignition IGBT Surface Mount > 410V > NGx15N41 Figure 13.Transient Thermal Resistance (Non−normalized Junction−to−Ambient mounted on fixture in Figure 14) 10 R(t), TRANSIENT THERMAL RESISTANCE (° C/Watt) Duty Cycle = 0.5 0.2 1 0.1 0.05 0.02 0.1 0.01 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT T 1 P (pk) t1 Single Pulse t2 DUTY CYCLE, D = t 0.01 01. 0 0 0 0 1 0 .0 0 0 1 0 .0 0 1 0.01 0. T J(pk) T A = P (pk) R θJA (t) R θJC ≅ R(t) for t ≤ 0.2 s 1 /t2 11 0 100 1000 t,TIME (S) Figure 14. Test Fixture for Transient Thermal Curve (48 square inches of 1/8 thick aluminum) 1.5 � 4� 4� 0.125 � 4� © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 Ignition IGBT Surface Mount > 410V > NGx15N41 Figure 16. Single Pulse Safe Operating Area (Mounted on an Infinite Heatsink at TA = 125ºC) Figure 15. Single Pulse Safe Operating Area (Mounted on an Infinite Heatsink at TA = 25ºC) 100 100 100 µs 1 ms 1 10 ms 100 ms 0.1 0.01 1 10 100 1000 COLLECTOR CURRENT (AMPS) COLLECTOR CURRENT (AMPS) DC 10 10 DC 1 100 µs 0.1 1 ms 10 ms 0.01 100 ms 1 10 COLLECTOR EMITTER VOLTAGE (VOLTS) 100 100 t1 = 1 ms, D = 0.05 t1 = 1 ms, D = 0.05 t1 = 2 ms, D = 0.10 10 COLLECTOR CURRENT (AMPS) COLLECTOR CURRENT (AMPS) 1000 Figure 18. Pulse Train Safe Operating Area (Mounted on an Infinite Heatsink at TC = 125ºC) Figure 17. Pulse Train Safe Operating Area (Mounted on an Infinite Heatsink at TC = 25ºC) t1 = 3 ms, D = 0.30 1 I(pk) t1 0.1 t2 DUTY CYCLE, D = t 0.01 100 COLLECTOR EMITTER VOLTAGE (VOLTS) 1 10 COLLECTOR 1 /t2 100 EMITTER VOLTAGE (VOLTS) 1000 t1 = 2 ms, D = 0.10 10 t1 = 3 ms, D = 0.30 1 I(pk) t1 0.1 0.01 t2 DUTY CYCLE, D = t 1 1 /t2 10 100 COLLECTOR EMITTER VOLTAGE (VOLTS) © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 1000 Ignition IGBT Surface Mount > 410V > NGx15N41 Soldering Footrpint Dimensions b3 A Z D 12 5.80 0.228 3.00 0.118 1.60 0.063 6.17 0.243 c b 0.005 (0.13) e H DETAIL A 3 b2 2.58 0.102 c2 B 4 L3 L4 6.20 0.244 C A E M C H L2 GAUGE PLANE C L mm inches SEATING PLANE A1 L1 DETAIL A ROTATED 90 CW Dim Inches Millimeters Min Max Min Max A 0.086 0.094 2.18 2.38 A1 0.000 0.005 0.00 0.13 b 0.025 0.035 0.63 0.89 b2 0.030 0.045 0.76 1.14 b3 0.180 0.215 4.57 5.46 c 0.018 0.024 0.46 0.61 c2 0.018 0.024 0.46 0.61 D 0.235 0.245 5.97 6.22 E 0.250 0.265 6.35 6.73 e 0.090 BSC 0.370 0.410 9.40 10.41 L 0.055 0.070 1.40 1.78 L2 0.108 REF 0.020 BSC A= Y= WW G= Assembly Location Year = Work Week Pb Free Device 1 Gate DPAK CASE 369C STYLE 7 2 Collector YWW GD 15N41G 4 Collector 3 Emitter 2.29 BSC H L1 Part Marking System 2.74 REF 0.51 BSC L3 0.035 0.050 0.89 1.27 L4 −−− 0.040 −−− 1.01 Z 0.155 −−− 3.93 −−− NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. DIMENSION: INCHES.CONTROLLING 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI- MENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 Ignition IGBT Surface Mount > 410V > NGx15N41 Dimensions D2PAK CASE 418B 04 ISSUE K Dim C E B 4 1 A S 23 T SEATING PLANE K J G D 3 PL 0.13 (0.005) VARIABLE CONFIGURATION ZONE V W W M T B R L M M F VIEW W 1 WV IEW W 2 A 0.340 0.380 8.64 9.65 B 0.380 0.405 9.65 10.29 0.190 4.06 4.83 0.020 0.035 0.51 0.89 E 0.045 0.055 1.14 1.40 F 0.310 0.350 7.87 8.89 IEW W 3 0.100 BSC 2.54 BSC H 0.080 0.110 2.03 2.79 J 0.018 0.025 0.46 0.64 K 0.090 0.110 2.29 2.79 L 0.052 0.072 1.32 1.83 M 0.280 0.320 7.11 8.13 F WV Max 0.160 M F Min C P U L Max D M N Millimeters Min G H Inches W N 0.197 REF 5.00 REF P 0.079 REF 2.00 REF R 0.039 REF 0.99 REF S 0.575 0.625 14.60 15.88 V 0.045 0.055 1.14 1.40 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. Soldering Footrpint Part Marking System A= Y= WW G= 10.49 Assembly Location Year = Work Week Pb Free Device 8.38 4 Collector 16.155 NGB 15N41CLG AYWW 2X 3.504 2X 1.016 5.080 PITCH D2PAK CASE 418B STYLE 4 1 Gate 2 Collector 3 Emitter DIMENSIONS: MILLIMETERS © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 Ignition IGBT Surface Mount > 410V > NGx15N41 Part Marking System Dimensions TO 220 CASE 221A 09 ISSUE AF SEATING PLANE T B F T A= Y= WW G= Assembly Location Year = Work Week Pb Free Device C S 4 Collector 4 A Q 12 3 U H TO 220AB CASE 221A STYLE 9 K Z L NGP 15N41CLG AYWW 1 Gate R V J G 2 Collector D N Dim 3 Emitter Inches Millimeters Min Max Min Max A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.161 3.61 4.09 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.014 0.025 0.36 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 --- 1.15 --- Z --- 0.080 --- 2.04 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. ORDERING INFORMATION Device Package Shipping† NGD15N41ACLT4G DPAK (Pb−Free) 2500 / Tape & Reel NGB15N41ACLT4G D 2PAK (Pb−Free) 800 / Tape & Reel NGP15N41ACLG TO-220 (Pb−Free) 50 Units / Rail †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics. © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18