NGD18N40ACLBT4G

NGD18N40ACLBT4G

  • 厂商:

    HAMLIN

  • 封装:

    TO-252(DPAK)

  • 描述:

    IGBT 430V 15A 115W DPAK-3

  • 数据手册
  • 价格&库存
NGD18N40ACLBT4G 数据手册
Ignition IGBT Surface Mount > 400V > NGD18N40ACLB NGD18N40ACLB - 18 A, 400 V, N-Channel Ignition IGBT, DPAK Pb Description This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over− Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features • Ideal for Coil−on−Plug Applications • DPAK Package Offers Smaller Footprint for Increased Board Space • Gate−Emitter ESD Protection • Temperature Compensated Gate−Collector Voltage Clamp 18 Amps, 400 Volts VCE(on) ≤ 2.0 V @ IC = 10 A, VGE ≥ 4.5 V Limits Stress Applied to Load • Integrated ESD Diode Protection • New Design Increases Unclamped Inductive Switching (UIS) Energy Per Area Maximum Ratings (TJ = 25°C unless otherwise noted) Rating • Low Threshold Voltage Interfaces Power Loads to Logic or Symbol Value Unit VCES 430 VDC Microprocessor Devices • Low Saturation Voltage Collector−Emitter Voltage • High Pulsed Current Capability • Optional Gate Resistor (RG) and Gate−Emitter Resistor Collector−Gate Voltage VCER 430 VDC (RGE) • Emitter Ballasting for Short−Circuit Capability Gate−Emitter Voltage Collector Current−Continuous @ TC = 25°C − Pulsed VGE IC 18 VDC 15 ADC 50 AAC ESD (Human Body Model) R = 1500 Ω, C = 100 pF ESD 8.0 kV ESD (Machine Model) R = 0 Ω, C = 200 pF ESD 800 V Total Power Dissipation @ TC = 25°C Derate above 25°C PD 115 W 0.77 W/°C • These are Pb−Free Devices Functional Diagram Additional Information Operating and Storage Temperature Range TJ, Tstg −55 to +175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Datasheet Resources Samples © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 Ignition IGBT Surface Mount > 400V > NGD18N40ACLB Unclamped Collector−To−Emitter Avalanche Characteristics (−55°≤TJ ≤150°C) Rating Symbol Value Unit Single Pulse Collector−to−Emitter Avalanche Energy VCC = 50 V, VGE = 5.0 V, Pk IL = 21.1 A, L = 1.8 mH, Starting TJ = 25°C 400 VCC = 50 V, VGE = 5.0 V, Pk IL = 16.2 A, L = 3.0 mH, Starting TJ = 25°C EAS VCC = 50 V, VGE = 5.0 V, Pk IL = 18.3 A, L = 1.8 mH, Starting TJ = 125°C 400 mJ 300 Reverse Avalanche Energy VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C EAS(R) 2000 mJ Maximum Short-Circuit Times (−55°≤TJ ≤ 150°C) Rating Symbol Value Unit Short Circuit Withstand Time 1 (See Figure 17, 3 Pulses with 10 ms Period) tsc1 750 µs Short Circuit Withstand Time 2 (See Figure 18, 3 Pulses with 10 ms Period) tsc2 5.0 ms Symbol Value Unit RθJC 1.3 °C/W RθJA 95 °C/W TL 275 °C Thermal Characteristics Rating Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient DPAK (Note 1) Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 5 seconds © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 Ignition IGBT Surface Mount > 400V > NGD18N40ACLB Electrical Characteristics - OFF Characteristic Collector−Emitter Clamp Voltage Symbol Test Conditions Temperature Min Typ Max IC = 2.0 mA TJ = −40°C to 150°C 380 395 420 VDC BVCES IC = 10 mA VCE = 350 Zero Gate Voltage Collector Current ICES V, VGE = 0 V TJ = −40°C to 150°C 390 405 430 TJ = 25°C − 2.0 20 TJ = 150°C − 10 40* µADC TJ = −40°C − 1.0 10 TJ = 25°C − − 2.0 TJ = 25°C − 0.7 1.0 TJ = 150°C − 12 25* TJ = −40°C − 0.1 1.0 TJ = 25°C 27 33 37 TJ = 150°C 30 36 40 TJ = −40°C 25 32 35 VCE = 15 V, VGE = 0 V Reverse Collector−Emitter Leakage Current Reverse Collector−Emitter Clamp Voltage IECS BVCES(R) Unit VCE = −24 V IC = −75 mA mA VDC BVGES IG = 5.0 mA TJ = −40°C to 150°C 11 13 15 VDC Gate−Emitter Leakage Current IGES VGE = 10 V TJ = −40°C to 150°C 384 640 700 µADC Gate Emitter Resistor RGE − TJ = −40°C to 150°C 10 16 26 kΩ Gate−Emitter Clamp Voltage Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. When surface mounted to an FR4 board using the minimum recommended pad size. *Maximum Value of Characteristic across Temperature Range. © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 Ignition IGBT Surface Mount > 400V > NGD18N40ACLB Electrical Characteristics - ON (Note 2) Characteristic Symbol Threshold Temperature Coefficient (Negative) Temperature Min Typ Max TJ = 25°C 1.1 1.4 1.9 TJ = 150°C 0.75 1.0 1.4 TJ = −40°C 1.2 1.6 2.1* _ _ 3.4 _ TJ = 25°C 1.0 1.4 1.6 TJ = 150°C 0.9 1.3 1.6 TJ = −40°C 1.1 1.45 1.7* TJ = 25°C 1.3 1.6 1.9* TJ = 150°C 1.2 1.55 1.8 TJ = −40°C 1.4 1.6 1.9* TJ = 25°C 1.4 1.8 2.05 TJ = 150°C 1.4 1.8 2.0 TJ = −40°C 1.4 1.8 2.1* TJ = 25°C 1.8 2.2 2.5 TJ = 150°C 2.0 2.4 2.6* TJ = −40°C 1.7 2.1 2.5 TJ = 25°C 1.3 1.8 2.0* TJ = 150°C 1.3 1.75 2.0* TJ = −40°C 1.4 1.8 2.0* IC = 6.5 A, VGE = 3.7 V TJ = 25°C _ _ 1.65 VCE = 5.0 V, IC = 6.0 A TJ = −40°C to 150°C 8.0 14 25 IC = 1.0 mA, VGE(th) Gate Threshold Voltage Test Conditions VGE = VCE _ _ IC = 6.0 A, VGE = 4.0 V IC = 8.0 A, VGE = 4.0 V IC = 10 A, VCE(on) Collector−to−Emitter On−Voltage VGE = 4.0 V IC = 15 A, VGE = 4.0 V IC = 10 A, VGE = 4.5 V Forward Transconductance gfs Unit VDC mV/ºC VDC Mhos Dynamic Characteristics Characteristic Input Capacitance Symbol Test Conditions CISS VCC = 25 V, Output Capacitance COSS VGE = 0 V f = 1.0 MHz Transfer Capacitance Temperature CRSS TJ = −40°C to 150°C Min Typ Max 400 800 1000 50 75 100 4.0 7.0 10 Unit pF © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 Ignition IGBT Surface Mount > 400V > NGD18N40ACLB Switiching Characteristics Characteristic Symbol Test Conditions Temperature Min Typ Max td(off) VCC = 300 V, IC = 6.5 A RG = 1.0 kΩ, RL = 46 Ω, TJ = 25°C − 4.0 10 tf VCC = 300 V, IC = 6.5 A RG = 1.0 kΩ, RL = 46 Ω, TJ = 25°C − 9.0 15 td(on) VCC = 10 V, IC = 6.5 A RG = 1.0 kΩ, RL = 1.5 Ω, TJ = 25°C − 0.7 4.0 tr VCC = 10 V, IC = 6.5 A RG = 1.0 kΩ, RL = 1.5 Ω, Turn−Off Delay Time (Resistive) Unit µS Fall Time (Resistive) Turn−On Delay Time µS Rise Time TJ = 25°C − 4.5 7.0 *Maximum Value of Characteristic across Temperature Range. 1. When surface mounted to an FR4 board using the minimum recommended pad size. 2. Pulse Test: Pulse Width ≤ 300 µS, Duty Cycle ≤ 2%. Ratings and Characteristic Curves Figure 1. Output Characteristics Figure 2. Output Characteristics © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 Ignition IGBT Surface Mount > 400V > NGD18N40ACLB Figure 4. Transfer Characteristics IC, COLLECTOR CURRENT (AMPS) Figure 3. Output Characteristics 60 VCE = 10 V 50 TJ 40 °C TJ = 25°C 30 TJ = 150°C 20 10 0 1 2 3 4 VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) Figure 5. Collector−to−Emitter Saturation Voltage vs Junction Temperature Figure 6. Collector−to−Emitter Voltage versus Gate−to−Emitter Voltage Figure 7. Collector−to−Emitter Voltage vs Gate−to−Emitter Voltage Figure 8. Capacitance Variation © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 Ignition IGBT Surface Mount > 400V > NGD18N40ACLB Figure 9. Gate Threshold Voltage vs Temperature Figure 10. Minimum Open Secondary Latch Current vs Temperature Figure 11. Typical Open Secondary Latch Current vs Temperature Figure 12. Inductive Switching Fall Time vs Temperature 0 Figure 13. Single Pulse Safe Operating Area Figure 14. Single Pulse Safe Operating Area (Mounted on an Infinite Heatsink at TA = 25°C) (Mounted on an Infinite Heatsink at TA = 125°C) © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 Ignition IGBT Surface Mount > 400V > NGD18N40ACLB Figure 15. Pulse Train Safe Operating Area Figure 15. Pulse Train Safe Operating Area (Mounted on an Infinite Heatsink at TC = 25°C) (Mounted on an Infinite Heatsink at TC = 125°C) Figure 17. Circuit Configuration for Short Circuit Test #1 Figure 18. Circuit Configuration for Short Circuit Test #2 © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 Ignition IGBT Surface Mount > 400V > NGD18N40ACLB Figure 19. Transient Thermal Resistance (Non−normalized Junction−to−Ambient mounted on minimum pad area) © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 Ignition IGBT Surface Mount > 400V > NGD18N40ACLB Soldering Footrpint Dimensions A E b3 D 12 NOTE 7 b2 e b c SIDE VIEW 0.005 (0.13) TOP VIEW M GAUGE PLANE L Z ALTERNATE CONSTRUCTIONS Max Min Max A 0.086 0.094 2.18 2.38 A1 0.000 0.005 0.00 0.13 b 0.025 0.035 0.63 0.89 b2 0.028 0.045 0.72 1.14 b3 0.180 0.215 4.57 5.46 c 0.018 0.024 0.46 0.61 c2 0.018 0.024 0.46 0.61 D 0.235 0.245 5.97 6.22 E 0.250 0.265 6.35 6.73 0.090 BSC 2.29 BSC H 0.370 0.410 9.40 10.41 L 0.055 0.070 1.40 1.78 L1 0.114 REF 2.90 REF L2 0.020 BSC 0.51 BSC L3 1 Gate 2 Collector 0.035 0.050 0.89 L4 −−− 0.040 −−− 1.01 Z 0.155 −−− 3.93 −−− YWW F G18 N40xG N40AG L 4 Collector 3 Emitter Millimeters Min e mm inches Part Marking System BOTTOM VIEW Inches 6.17 0.243 SCALE 3:1 ROTATED 90 CW Dim 1.60 0.063 SEATING PLANE A1 L1 DETAIL A 5.80 0.228 BOTTOM VIEW Z C 3.00 0.118 C H L2 Z H DETAIL A 3 2.58 0.102 c2 4 L3 L4 B 6.20 0.244 C A G18N40x= Y WW Device Code = Year = Work Week ORDERING INFORMATION Device Package Shipping† NGB18N40ACLBT4G DPAK (Pb−Free) 2500 / Tape & Reel 1.27 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics. © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18
NGD18N40ACLBT4G 价格&库存

很抱歉,暂时无法提供与“NGD18N40ACLBT4G”相匹配的价格&库存,您可以联系我们找货

免费人工找货