NGD18N40CLBT4G

NGD18N40CLB, NGD18N40ACLB Ignition IGBT, 18 A, 400 V N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. www.onsemi.com 18 AMPS, 400 VOLTS VCE(on) 3 2.0 V @ IC = 10 A, VGE . 4.5 V Features • • • • • • • • • • • • Ideal for Coil−on−Plug Applications DPAK Package Offers Smaller Footprint for Increased Board Space Gate−Emitter ESD Protection Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load Integrated ESD Diode Protection New Design Increases Unclamped Inductive Switching (UIS) Energy Per Area Low Threshold Voltage Interfaces Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Optional Gate Resistor (RG) and Gate−Emitter Resistor (RGE) Emitter Ballasting for Short−Circuit Capability These are Pb−Free Devices C G RGE E 4 1 2 3 MARKING DIAGRAM 1 Gate MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Collector−Emitter Voltage VCES 430 VDC Collector−Gate Voltage VCER 430 VDC Gate−Emitter Voltage VGE 18 VDC IC 15 50 ADC AAC Rating Collector Current−Continuous @ TC = 25°C − Pulsed DPAK CASE 369C STYLE 7 YWW G18 N40xG 4 Collector 3 Emitter G18N40x Y WW G = Device Code x = B or A = Year = Work Week = Pb−Free Device ESD (Human Body Model) R = 1500 W, C = 100 pF ESD ESD (Machine Model) R = 0 W, C = 200 pF ESD 800 V PD 115 0.77 Watts W/°C Device Package Shipping† −55 to +175 °C NGD18N40CLBT4G DPAK (Pb−Free) 2500/Tape & Reel NGD18N40ACLBT4G DPAK (Pb−Free) 2500/Tape & Reel Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range kV 2 Collector 8.0 TJ, Tstg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2016 June, 2016 − Rev. 10 1 ORDERING INFORMATION †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NGD18N40CLB/D NGD18N40CLB, NGD18N40ACLB UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ TJ ≤ 175°C) Characteristic Symbol Single Pulse Collector−to−Emitter Avalanche Energy VCC = 50 V, VGE = 5.0 V, Pk IL = 21.1 A, L = 1.8 mH, Starting TJ = 25°C VCC = 50 V, VGE = 5.0 V, Pk IL = 16.2 A, L = 3.0 mH, Starting TJ = 25°C VCC = 50 V, VGE = 5.0 V, Pk IL = 18.3 A, L = 1.8 mH, Starting TJ = 125°C EAS Reverse Avalanche Energy VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C EAS(R) Value Unit mJ 400 400 300 mJ 2000 MAXIMUM SHORT−CIRCUIT TIMES (−55°C ≤ TJ ≤ 150°C) Short Circuit Withstand Time 1 (See Figure 17, 3 Pulses with 10 ms Period) tsc1 750 ms Short Circuit Withstand Time 2 (See Figure 18, 3 Pulses with 10 ms Period) tsc2 5.0 ms RθJC 1.3 °C/W RθJA 95 °C/W TL 275 °C THERMAL CHARACTERISTICS Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient DPAK (Note 1) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions Temperature Min Typ Max Unit IC = 2.0 mA TJ = −40°C to 150°C 380 395 420 VDC IC = 10 mA TJ = −40°C to 150°C 390 405 430 TJ = 25°C − 2.0 20 TJ = 150°C − 10 40* TJ = −40°C − 1.0 10 TJ = 25°C − − 2.0 TJ = 25°C − 0.7 1.0 TJ = 150°C − 12 25* TJ = −40°C − 0.1 1.0 TJ = 25°C 27 33 37 TJ = 150°C 30 36 40 TJ = −40°C 25 32 35 IG = 5.0 mA TJ = −40°C to 150°C 11 13 15 VDC VGE = 10 V TJ = −40°C to 150°C 384 640 700 mADC − TJ = −40°C to 150°C 10 16 26 kW OFF CHARACTERISTICS Collector−Emitter Clamp Voltage Zero Gate Voltage Collector Current BVCES ICES VCE = 350 V, VGE = 0 V VCE = 15 V, VGE = 0 V Reverse Collector−Emitter Leakage Current IECS VCE = −24 V Reverse Collector−Emitter Clamp Voltage BVCES(R) IC = −75 mA Gate−Emitter Clamp Voltage BVGES Gate−Emitter Leakage Current IGES Gate Emitter Resistor RGE mADC mA VDC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. When surface mounted to an FR4 board using the minimum recommended pad size. *Maximum Value of Characteristic across Temperature Range. www.onsemi.com 2 NGD18N40CLB, NGD18N40ACLB ELECTRICAL CHARACTERISTICS (continued) Characteristic Symbol Test Conditions Temperature Min Typ Max Unit TJ = 25°C 1.1 1.4 1.9 VDC TJ = 150°C 0.75 1.0 1.4 TJ = −40°C 1.2 1.6 2.1* − − 3.4 − mV/°C TJ = 25°C 1.0 1.4 1.6 VDC TJ = 150°C 0.9 1.3 1.6 TJ = −40°C 1.1 1.45 1.7* TJ = 25°C 1.3 1.6 1.9* TJ = 150°C 1.2 1.55 1.8 TJ = −40°C 1.4 1.6 1.9* TJ = 25°C 1.4 1.8 2.05 TJ = 150°C 1.4 1.8 2.0 TJ = −40°C 1.4 1.8 2.1* TJ = 25°C 1.8 2.2 2.5 TJ = 150°C 2.0 2.4 2.6* TJ = −40°C 1.7 2.1 2.5 TJ = 25°C 1.3 1.8 2.0* TJ = 150°C 1.3 1.75 2.0* TJ = −40°C 1.4 1.8 2.0* IC = 6.5 A, VGE = 3.7 V TJ = 25°C − − 1.65 VCE = 5.0 V, IC = 6.0 A TJ = −40°C to 150°C 8.0 14 25 Mhos 400 800 1000 pF VCC = 25 V, VGE = 0 V f = 1.0 MHz TJ = −40°C to 150°C ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGE(th) IC = 1.0 mA, VGE = VCE Threshold Temperature Coefficient (Negative) Collector−to−Emitter On−Voltage − − VCE(on) IC = 6.0 A, VGE = 4.0 V IC = 8.0 A, VGE = 4.0 V IC = 10 A, VGE = 4.0 V IC = 15 A, VGE = 4.0 V IC = 10 A, VGE = 4.5 V Forward Transconductance gfs DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Transfer Capacitance CRSS 50 75 100 4.0 7.0 10 SWITCHING CHARACTERISTICS Turn−Off Delay Time (Resistive) td(off) VCC = 300 V, IC = 6.5 A RG = 1.0 kW, RL = 46 W, TJ = 25°C − 4.0 10 Fall Time (Resistive) tf VCC = 300 V, IC = 6.5 A RG = 1.0 kW, RL = 46 W, TJ = 25°C − 9.0 15 Turn−On Delay Time td(on) VCC = 10 V, IC = 6.5 A RG = 1.0 kW, RL = 1.5 W TJ = 25°C − 0.7 4.0 tr VCC = 10 V, IC = 6.5 A RG = 1.0 kW, RL = 1.5 W TJ = 25°C − 4.5 7.0 Rise Time 2. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%. *Maximum Value of Characteristic across Temperature Range. www.onsemi.com 3 mSec mSec NGD18N40CLB, NGD18N40ACLB TYPICAL ELECTRICAL CHARACTERISTICS (unless otherwise noted) 60 VGE = 10 V IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 60 6.0 V 50 5.0 V TJ = 25°C 40 4.5 V 4.0 V 30 3.5 V 20 3.0 V 10 2.5 V 0 1 3 2 4 5 6 7 8 9 10 TJ = −40°C 4.5 V 40 4.0 V 30 3.5 V 20 3.0 V 10 2.5 V 0 1 2 3 4 5 6 7 8 9 VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) Figure 1. Output Characteristics Figure 2. Output Characteristics 10 60 IC, COLLECTOR CURRENT (AMPS) 60 IC, COLLECTOR CURRENT (AMPS) 5.0 V 50 0 0 VGE = 10 V 6.0 V 50 TJ = 150°C 40 5.0 V 4.5 V 30 4.0 V 3.5 V 20 3.0 V 10 2.5 V VCE = 10 V 50 TJ = −40°C 40 TJ = 25°C 30 TJ = 150°C 20 10 0 0 0 1 2 3 4 5 6 7 8 9 1 10 VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) COLLECTOR TO EMITTER VOLTAGE (VOLTS) VGE = 5 V IC = 25 A 3.0 IC = 20 A 2.5 IC = 15 A 2.0 IC = 10 A 1.5 IC = 5 A 1.0 0.5 0.0 −50 −25 0 25 50 75 100 3 4 5 Figure 4. Transfer Characteristics 4.0 3.5 2 VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) Figure 3. Output Characteristics VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) 6.0 V VGE = 10 V 125 150 3 TJ = 25°C 2.5 IC = 15 A 2 IC = 10 A 1.5 IC = 5 A 1 0.5 0 3 TJ, JUNCTION TEMPERATURE (°C) 4 5 6 7 8 9 GATE−TO−EMITTER VOLTAGE (VOLTS) Figure 5. Collector−to−Emitter Saturation Voltage versus Junction Temperature Figure 6. Collector−to−Emitter Voltage versus Gate−to−Emitter Voltage www.onsemi.com 4 10 NGD18N40CLB, NGD18N40ACLB 10000 3 TJ = 150°C IC = 15 A 2 C, CAPACITANCE (pF) 2.5 IC = 10 A 1.5 IC = 5 A 1 1000 Ciss 100 Coss 10 Crss 0.5 3 4 5 6 7 8 9 0 10 40 60 80 140 160 180 200 100 120 VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) Figure 7. Collector−to−Emitter Voltage versus Gate−to−Emitter Voltage Figure 8. Capacitance Variation 30 2 1.8 VTH + 4 σ VTH − 4 σ 1.2 1 0.8 0.6 0.4 0.2 0 −50 −30 −10 10 30 VCC = 50 V VGE = 5.0 V RG = 1000 W 25 VTH 1.6 1.4 20 GATE TO EMITTER VOLTAGE (VOLTS) 50 70 90 L = 1.8 mH 20 15 L = 3 mH 10 L = 6 mH 5 0 −50 −25 110 130 150 0 25 50 75 100 125 150 175 TEMPERATURE (°C) TEMPERATURE (°C) Figure 9. Gate Threshold Voltage versus Temperature Figure 10. Minimum Open Secondary Latch Current versus Temperature 12 30 VCC = 50 V VGE = 5.0 V RG = 1000 W 25 L = 1.8 mH 20 10 SWITCHING TIME (ms) IL, LATCH CURRENT (AMPS) 1 0 0 IL, LATCH CURRENT (AMPS) GATE THRESHOLD VOLTAGE (VOLTS) COLLECTOR TO EMITTER VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS (unless otherwise noted) L = 3 mH 15 L = 6 mH 10 8 VCC = 300 V VGE = 5.0 V RG = 1000 W IC = 10 A L = 300 mH tf 6 td(off) 4 2 5 0 −50 −25 0 25 50 75 100 125 150 0 −50 −30 −10 175 10 30 50 70 90 110 130 150 TEMPERATURE (°C) TEMPERATURE (°C) Figure 11. Typical Open Secondary Latch Current versus Temperature Figure 12. Inductive Switching Fall Time versus Temperature www.onsemi.com 5 NGD18N40CLB, NGD18N40ACLB 100 COLLECTOR CURRENT (AMPS) COLLECTOR CURRENT (AMPS) 100 DC 10 100 ms 1 ms 1 10 ms 100 ms 0.1 0.01 1 100 ms 0.1 100 ms 1 ms 10 ms 0.01 1 10 100 1000 1 10 100 1000 COLLECTOR−EMITTER VOLTAGE (VOLTS) COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 13. Single Pulse Safe Operating Area (Mounted on an Infinite Heatsink at TA = 255C) Figure 14. Single Pulse Safe Operating Area (Mounted on an Infinite Heatsink at TA = 1255C) 100 100 t1 = 1 ms, D = 0.05 COLLECTOR CURRENT (AMPS) COLLECTOR CURRENT (AMPS) 10 DC t1 = 2 ms, D = 0.10 10 t1 = 3 ms, D = 0.30 1 0.1 0.01 t1 = 1 ms, D = 0.05 t1 = 2 ms, D = 0.10 10 t1 = 3 ms, D = 0.30 1 0.1 0.01 1 10 100 1000 1 10 100 1000 COLLECTOR−EMITTER VOLTAGE (VOLTS) COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 15. Pulse Train Safe Operating Area (Mounted on an Infinite Heatsink at TC = 255C) Figure 16. Pulse Train Safe Operating Area (Mounted on an Infinite Heatsink at TC = 1255C) VBATT = 16 V VBATT = 16 V RL = 0.1 W RL = 0.1 W L = 10 mH L = 10 mH 5.0 V 5.0 V VIN VIN RG = 1 kW RG = 1 kW RS = 55 mW Figure 17. Circuit Configuration for Short Circuit Test #1 Figure 18. Circuit Configuration for Short Circuit Test #2 www.onsemi.com 6 NGD18N40CLB, NGD18N40ACLB R(t), TRANSIENT THERMAL RESISTANCE (°C/Watt) 1000 100 Duty Cycle = 0.5 0.2 10 0.1 0.05 0.02 0.01 1 0.1 Single Pulse D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 P(pk) t1 0.01 t2 TJ(pk) − TA = P(pk) RqJA(t) RqJC X R(t) for t ≤ 0.2 s DUTY CYCLE, D = t1/t2 0.001 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 10 100 1000 t,TIME (S) Figure 19. Transient Thermal Resistance (Non−normalized Junction−to−Ambient mounted on minimum pad area) www.onsemi.com 7 NGD18N40CLB, NGD18N40ACLB PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F A E NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. C A b3 B c2 4 L3 Z D 1 2 H DETAIL A 3 L4 NOTE 7 b2 e c SIDE VIEW b TOP VIEW 0.005 (0.13) M C Z H L2 GAUGE PLANE C L L1 DETAIL A DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z BOTTOM VIEW Z SEATING PLANE BOTTOM VIEW A1 ALTERNATE CONSTRUCTIONS STYLE 7: PIN 1. 2. 3. 4. ROTATED 905 CW SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− GATE COLLECTOR EMITTER COLLECTOR 3.00 0.118 1.60 0.063 6.17 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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