Ignition IGBT
Surface Mount > 400V > NGD8201AN
NGD8201AN - 20 A, 400 V, N-Channel Ignition IGBT, DPAK
Pb
Description
This Logic Level Insulated Gate Bipolar Transistor (IGBT)
features monolithic circuitry integrating ESD and Over−
Voltage clamped protection for use in inductive coil
drivers applications. Primary uses include Ignition, Direct
Fuel Injection, or wherever high voltage and high current
switching is required.
Features
• Ideal for Coil−on−Plug and Driver−on−Coil Applications
• DPAK Package Offers Smaller Footprint for Increased
Board Space
• Gate−Emitter ESD Protection
20 Amps, 400 Volts
VCE(on) ≤ 1.3 V @
IC = 10 A, VGE ≥ 4.5 V
• Temperature Compensated Gate−Collector Voltage Clamp
Limits Stress Applied to Load
• Integrated ESD Diode Protection
• New Design Increases Unclamped Inductive Switching
Maximum Ratings (TJ = 25°C unless otherwise noted)
(UIS) Energy Per Area
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCES
440
V
Gate−Gate Voltage
VCES
440
V
Gate−Emitter Voltage
VGE
± 15
V
20
ADC
50
AAC
• Low Threshold Voltage for Interfacing Power Loads to
Logic or Microprocessor Devices
• Low Saturation Voltage
Collector Current−Continuous
@ TC = 25°C − Pulsed
IC
Continous Gate Current
IG
1.0
mA
Transient Gate Current
(t ≤ 2 ms, f ≤ 100 Hz)
IG
20
mA
ESD (Charged–Device Model)
ESD
2.0
kV
ESD (Human Body Model)
R = 1500 Ω, C = 100 pF
ESD
2.0
kV
ESD (Machine Model)
R = 0 Ω, C = 200 pF
ESD
500
V
125
W
0.83
W/°C
−55 to
+175
°C
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage
Temperature Range
PD
TJ, Tstg
• High Pulsed Current Capability
• Emitter Ballasting for Short−Circuit Capability
• These are Pb−Free Devices
Functional Diagram
Additional Information
Datasheet
Resources
Samples
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are
stress ratings only. Functional operation above the Recommended Operating Conditions
is not implied. Extended exposure to stresses above the Recommended Operating
Conditions may affect device reliability.
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/15/18
Ignition IGBT
Surface Mount > 400V > NGD8201AN
Unclamped Collector−To−Emitter Avalanche Characteristics
Symbol
Value
Unit
Single Pulse Collector−to−Emitter Avalanche Energy
VCC = 50 V, VGE = 5.0 V, Pk IL = 16.7 A, RG = 1000 Ω , L = 1.8 mH, Starting TJ = 25°C
VCC = 50 V, VGE = 5.0 V, Pk IL = 14.9 A, RG = 1000 Ω , L = 3.0 mH, Starting TJ = 150°C
250
200
EAS
mJ
180
VCC = 50 V, VGE = 5.0 V, Pk IL = 14.1 A, RG = 1000 Ω , L = 1.8 mH, Starting TJ = 175°C
Reverse Avalanche Energy
VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C
EAS (R)
2000
mJ
Thermal Characteristics
Symbol
Value
RθJC
1.3
Thermal Resistance, Junction to Ambient DPAK (Note 1)
RθJA
95
Maximum Lead Temperature for Soldering Purposes, 1/8”
from case for 5 seconds
TL
275
Thermal Resistance, Junction to Case
Unit
°C/W
°C
1. When surface mounted to an FR4 board using the minimum recommended pad size.
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/15/18
Ignition IGBT
Surface Mount > 400V > NGD8201AN
Electrical Characteristics - OFF
Characteristic
Collector−Emitter
Clamp Voltage
Symbol
Test
Conditions
Temperature
Min
Typ
Max
IC = 2.0 mA
TJ = −40°C to 175°C
370
395
420
BVCES
V
IC = 10 mA
VCE = 15 V
VGE = 0 V
Zero Gate Voltage
Collector Current
ICES
VCE = 200 V
VGE = 0 V
Reverse Collector−Emitter
Clamp Voltage
Reverse Collector−Emitter
Leakage Current
BVCES(R)
ICES(R)
Unit
IC = -75 mA
VCE = −24 V
TJ = −40°C to 175°C
390
415
440
TJ = 25°C
−
0.1
1.0
TJ = 25°C
0.5
1.5
10
µA
TJ = 175°C
1.0
25
100*
TJ = −40°C
0.4
0.8
5.0
TJ = 25°C
30
35
39
TJ = 175°C
35
39
45*
TJ = −40°C
30
33
37
TJ = 25°C
0.05
0.2
1.0
TJ = 175°C
1.0
8.5
25
TJ = −40°C
0.005
0.025
0.2
V
mA
Gate−Emitter Clamp Voltage
BVGES
IG = ± 5.0 mA
TJ = −40°C to 175°C
12
12.5
14
V
Gate−Emitter Leakage Current
IGES
VGE = ± 5.0 V
TJ = −40°C to 175°C
200
300
350*
µA
Gate Resistor
RG
_
TJ = −40°C to 175°C
–
70
–
Ω
Gate−Emitter Resistor
RGE
−
TJ = −40°C to 175°C
14.25
16
25
kΩ
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical
Characteristics if operated under different conditions.
*Maximum Value of Characteristic across Temperature Range.
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/15/18
Ignition IGBT
Surface Mount > 400V > NGD8201AN
Electrical Characteristics - ON (Note 3)
Characteristic
Gate Threshold Voltage
Threshold Temperature
Coefficient (Negative)
Symbol
VGE (th)
Test Conditions
IC = 1.0 mA,
VGE = VCE
−
−
IC = 6.5 A,
VGE = 3.7 V
IC =9.0 A,
VGE = 3.9 V
IC = 7.5 A,
VGE = 4.5 V
Collector−to−Emitter
On−Voltage
VCE (on)
IC = 10 A,
VGE = 4.5 V
IC = 15 A,
VGE = 4.5 V
IC = 20 A,
VGE = 4.5 V
Forward Transconductance
gfs
IC = 6.0 A,
VCE = 5.0 V
Temperature
Min
Typ
Max
TJ = 25°C
1.5
1.8
2.1
TJ = 175°C
0.7
1.0
1.3
TJ = −40°C
1.7
2.0
2.3*
−
4.0
4.6
5.2
TJ = 25°C
0.85
1.03
1.35
TJ = 175°C
0.7
0.9
1.15
TJ = −40°C
0.09
1.11
1.4
TJ = 25°C
0.9
1.11
1.45
TJ = 175°C
0.8
1.01
1.25
TJ = −40°C
1.0
1.18
1.5
TJ = 25°C
0.85
1.15
1.4
TJ = 175°C
0.7
0.95
1.2
TJ = −40°C
1.0
1.3
1.6*
TJ = 25°C
1.0
1.3
1.6
TJ = 175°C
0.8
1.05
1.4
TJ = −40°C
1.1
1.4
1.7*
TJ = 25°C
1.15
1.45
1.7
TJ = 175°C
1.0
1.3
1.55
TJ = −40°C
1.25
1.55
1.8*
TJ = 25°C
1.1
1.4
1.9
TJ = 175°C
1.2
1.5
1.8
TJ = −40°C
1.3
1.42
2.0
TJ = 25°C
10
18
25
Unit
V
mV/°C
V
*Maximum Value of Characteristic across Temperature Range.
3. Pulse Test: Pulse Width ≤ 300 µS, Duty Cycle ≤ 2%.
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/15/18
Mhos
Ignition IGBT
Surface Mount > 400V > NGD8201AN
Dynamic Characteristics
Characteristic
Symbol
Input Capacitance
CISS
Output Capacitance
COSS
Transfer Capacitance
CRSS
Test Conditions
f = 10 kHz
VCC = 25 V
Temperature
TJ = -40ºC
to
175°C
Min
Typ
Max
1100
1300
1500
70
80
90
18
20
22
Unit
pF
Switching Characteristics
Characteristic
Turn−Off Delay Time (Resistive)
Symbol
td (off)
Test
Conditions
VCC = 300 V
IC = 9.0 A
Temperature
Min
Typ
Max
TJ = 25°C
6.0
8.0
10
TJ = 175°C
6.0
8.0
10
TJ = 25°C
4.0
6.0
8.0
TJ = 175°C
8.0
10.5
14
TJ = 25°C
3.0
5.0
7.0
TJ = 175°C
5.0
7.0
9.0
TJ = 25°C
1.5
3.0
4.5
TJ = 175°C
5.0
7.0
10
TJ = 25°C
1.0
1.5
2.0
TJ = 175°C
1.0
1.5
2.0
TJ = 25°C
4.0
6.0
8.0
TJ = 175°C
3.0
5.0
7.0
Unit
RG = 1.0 kΩ
Fall Time (Resistive)
Turn−Off Delay Time (Inductive)
tf
td (off)
RL = 33 Ω
VGE = 5.0 V
VCC = 300 V
IC = 9.0 A
µSec
RG = 1.0 kΩ
L = 300 µH
Fall Time (Inductive)
Turn−On Delay Time
tf
td (on)
VGE = 5.0 V
VCC = 14 V
IC = 9.0 A
RG = 1.0 kΩ
Rise Time
tr
RL = 1.5 Ω
VGE = 5.0 V
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/15/18
Ignition IGBT
Surface Mount > 400V > NGD8201AN
Typical Electrical Characteristics
Figure 1. Self Clamped Inductive Switching
Figure 2. Open Secondary Avalanche Current vs. Temperature
Figure 3. Collector−to−Emitter Voltage vs. Junction Temperature
Figure 4. Collector Current vs. Collector−to−Emitter Voltage
Figure 5. Collector Current vs. Collector−to−Emitter Voltage
Figure 6. Collector Current vs. Collector−to−Emitter Voltage
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/15/18
Ignition IGBT
Surface Mount > 400V > NGD8201AN
Figure 7. Transfer Characteristics
Figure 8. Collector−to−Emitter Leakage Current vs. Temp
Figure 9. Gate Threshold Voltage vs. Temperature
Figure 10. Capacitance vs. Collector−to−Emitter Voltage
Figure 11. Resistive Switching Fall Time vs. Temperature
Figure 12. Inductive Switching Fall Time vs. Temperature
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/15/18
Ignition IGBT
Surface Mount > 400V > NGD8201AN
Figure 13. Minimum Pad Transient Thermal Resistance (Non−normalized Junction−to−Ambient)
Figure 14. Best Case Transient Thermal Resistance (Non−normalized Junction−to−Case Mounted on Cold Plate)
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/15/18
Ignition IGBT
Surface Mount > 400V > NGD8201AN
Soldering Footrpint
Dimensions
A
E
b3
c2
4
L3
D
12
L4
B
6.20
0.244
C
A
3
NOTE 7
b2
e
b
TOP VIEW
c
SIDE VIEW
0.005
Z
H
DETAIL A
Z
Inches
Max
C
SEATING
PLANE
Part Marking System
Min
Max
0.086
0.094
2.18
2.38
0.000
0.005
0.00
0.13
b
0.025
0.035
0.63
0.89
b2
0.028
0.045
0.72
1.14
b3
0.180
0.215
4.57
5.46
c
0.018
0.024
0.46
0.61
c2
0.018
0.024
0.46
0.61
D
0.235
0.245
5.97
6.22
E
0.250
0.265
6.35
6.73
2.29 BSC
H
0.370
0.410
9.40
10.41
L
0.055
0.070
1.40
1.78
L2
0.020 BSC
1
Gate
Millimeters
A
0.114 REF
mm
inches
A1
A1
0.090 BSC
6.17
0.243
SCALE 3:1
ROTATED 90 CW
L1
1.60
0.063
ALTERNATE
CONSTRUCTION
GAUGE
PLANE
L1
DETAIL A
e
5.80
0.228
H
L
Min
2.58
0.102
BOTTOM VIEW
BOTTOM VIEW
(0.13
)M C
L2
Dim
3.00
0.118
2.90 REF
2
Collector
AYWW
L
NGD F
4
Collector
8201AN
8201AG
3
Emitter
NGD8201A = Device Code
A=
Y=
WW
G
Assembly Location
Year
= Work Week
e
ORDERING INFORMATION
Device
Package
Shipping†
NGD8201ANT4G
DPAK
(Pb−Free)
2,500 /
Tape & Reel
0.51 BSC
L3
0.035
0.050
0.89
1.27
L4
−−−
0.040
−−−
1.01
Z
0.155
−−−
3.93
−−−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS,
OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT
EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST
EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H.
Disclaimer Notice - Information furnished is believed to be accurate and
reliable. However, users should independently evaluate the suitability of and
test each product selected for their own applications. Littelfuse products are
not designed for, and may not be used in, all applications. Read complete
Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics.
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/15/18
