Ignition IGBT
Surface Mount > 350V > NGD8205AN
NGD8205AN - 20 A, 350 V, N-Channel Ignition IGBT, DPAK
Pb
Description
This Logic Level Insulated Gate Bipolar Transistor (IGBT)
features monolithic circuitry integrating ESD and Over−
Voltage clamped protection for use in inductive coil
drivers applications. Primary uses include Ignition, Direct
Fuel Injection, or wherever high voltage and high current
switching is required.
Features
• Ideal for Coil−on−Plug and Driver−on−Coil Applications
• DPAK Package Offers Smaller Footprint for Increased
Board Space
• Gate−Emitter ESD Protection
20 Amps, 350 Volts
VCE(on) ≤ 1.3 V @
IC = 10 A, VGE ≥ 4.5 V
• Temperature Compensated Gate−Collector Voltage Clamp
Limits Stress Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage for Interfacing Power Loads to
Logic or Microprocessor Devices
Maximum Ratings (TJ = 25°C unless otherwise noted)
• Low Saturation Voltage
Rating
Collector−Emitter Voltage
Symbol
Value
Unit
• High Pulsed Current Capability
VCES
390
VDC
• Optional Gate Resistor (RG) and Gate−Emitter Resistor
(RGE)
Gate−Gate Voltage
VCER
390
VDC
Gate−Emitter Voltage
VGE
±15
VDC
20
ADC
50
AAC
IG
1.0
mA
ESD (Charged−Device Model)
ESD
2.0
kV
ESD (Human Body Model)
R = 1500 Ω, C = 100 pF
ESD
8.0
kV
ESD (Machine Model)
R = 0 Ω, C = 200 pF
ESD
400
V
125
W
0.83
W/°C
−55
to
+175
°C
• These are Pb−Free Devices
Applications
Collector Current−Continuous
@ TC = 25°C − Pulsed
Continuous Gate Current
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage
Temperature Range
IC
PD
TJ, Tstg
• Ignition Systems
Functional Diagram
Additional Information
Datasheet
Resources
Samples
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are
stress ratings only. Functional operation above the Recommended Operating Conditions
is not implied. Extended exposure to stresses above the Recommended Operating
Conditions may affect device reliability.
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/15/18
Ignition IGBT
Surface Mount > 350V > NGD8205AN
Unclamped Collector−To−Emitter Avalanche Characteristics (−55° ≤ TJ ≤ 175°C)
Symbol
Value
Unit
Single Pulse Collector−to−Emitter Avalanche Energy
VCC = 50 V, VGE = 5.0 V, Pk IL = 16.7 A, RG = 1000 Ω, L = 1.8 mH, Starting TJ = 25°C
VCC = 50 V, VGE = 5.0 V, Pk IL = 14.9 A, RG = 1000 Ω, L = 1.8 mH, Starting TJ = 150°C
250
mJ
200
EAS
VCC = 50 V, VGE = 5.0 V, Pk IL = 14.1 A, RG = 1000 Ω, L = 1.8 mH, Starting TJ = 175°C
180
Reverse Avalanche Energy
VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C
2000
EAS (R)
mJ
Thermal Characteristics
Symbol
Value
RθJC
1.2
Thermal Resistance, Junction to Ambient DPAK (Note 1)
RθJA
95
Maximum Lead Temperature for Soldering Purposes, 1/8”
from case for 5 seconds
TL
275
Thermal Resistance, Junction to Case
Unit
°C/W
°C
1. When surface mounted to an FR4 board using the minimum recommended pad size.
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/15/18
Ignition IGBT
Surface Mount > 350V > NGD8205AN
Electrical Characteristics - OFF
Characteristic
Collector−Emitter
Clamp Voltage
Symbol
Test
Conditions
Temperature
Min
Typ
Max
IC = 2.0 mA
TJ = −40°C
to 175°C
325
350
375
IC = 10 mA
TJ = −40°C
to 175°C
340
365
390
TJ = 25°C
−
0.1
1.0
TJ = 25°C
0.5
1.5
10
BVCES
V
VCE = 15 V
VGE = 0 V
Zero Gate Voltage
Collector Current
ICES
VCE = 175 V
VGE = 0 V
Reverse Collector−Emitter
Clamp Voltage
Reverse Collector−Emitter
Leakage Current
BVCES(R)
ICES(R)
Unit
IC = -75 mA
VCE = −24 V
µA
TJ = 175°C
1.0
25
100*
TJ = −40°C
0.4
0.8
5.0
TJ = 25°C
30
35
39
TJ = 175°C
35
39
45*
TJ = −40°C
30
33
37
TJ = 25°C
0.05
0.25
1.0
TJ = 175°C
1.0
12.5
25
TJ = −40°C
−
0.03
0.25
V
mA
Gate−Emitter Clamp Voltage
BVGES
IG = ± 5.0 mA
TJ = −40°C
to 175°C
12
12.5
14
V
Gate−Emitter Leakage Current
IGES
VGE = ± 5.0 V
TJ = −40°C
to 175°C
200
300
350*
µA
Gate Resistor
RG
−
TJ = −40°C
to 175°C
−
70
−
Ω
Gate−Emitter Resistor
RGE
−
TJ = −40°C
to 150°C
14.25
16
25
kΩ
*Maximum Value of Characteristic across Temperature Range.
3. Pulse Test: Pulse Width ≤ 300 µS, Duty Cycle ≤ 2%.
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/15/18
Ignition IGBT
Surface Mount > 350V > NGD8205AN
Electrical Characteristics - ON (Note 4)
Characteristic
Gate Threshold Voltage
Threshold Temperature
Coefficient (Negative)
Symbol
VGE (th)
−
Test Conditions
IC = 1.0 mA,
VGE = VCE
−
Temperature
Min
Typ
Max
TJ = 25°C
1.5
1.8
2.1
TJ = 175°C
0.7
1.0
1.3
TJ = −40°C
1.7
2.0
2.3*
−
3.8
4.6
6.0
TJ = 25°C
0.95
1.15
1.35
TJ = 175°C
0.7
0.95
1.15
TJ = −40°C
1.0
1.3
1.40
TJ = 25°C
0.95
1.25
1.45
TJ = 175°C
0.8
1.05
1.25
TJ = −40°C
1.1
1.4
1.5
TJ = 25°C
0.85
1.15
1.4
TJ = 175°C
0.7
0.95
1.2
TJ = −40°C
1.0
1.3
1.6*
TJ = 25°C
1.0
1.3
1.6
TJ = 175°C
0.8
1.05
1.4
TJ = −40°C
1.1
1.4
1.7*
TJ = 25°C
1.15
1.45
1.7
TJ = 175°C
1.0
1.3
1.55
TJ = −40°C
1.25
1.55
1.8*
TJ = 25°C
1.3
1.6
1.9
TJ = 175°C
1.2
1.5
1.8
TJ = −40°C
1.4
1.75
2.0*
TJ = 25°C
10
18
25
Unit
V
mV/°C
IC = 6.5 A,
VGE = 3.7 V
IC = 9.0 A,
VGE = 3.9 V
IC = 7.5 A,
VGE = 4.5 V
Collector−to−Emitter
On−Voltage
VCE (on)
V
IC = 10 A,
VGE = 4.5 V
IC = 15 A,
VGE = 4.5 V
IC = 20 A,
VGE = 4.5 V
Forward Transconductance
gfs
IC = 6.0 A,
VCE = 5.0 V
*Maximum Value of Characteristic across Temperature Range.
4. Pulse Test: Pulse Width ≤ 300 µS, Duty Cycle ≤ 2%.
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/15/18
Mhos
Ignition IGBT
Surface Mount > 350V > NGD8205AN
Dynamic Characteristics
Characteristic
Symbol
Input Capacitance
CISS
Output Capacitance
COSS
Transfer Capacitance
CRSS
Test
Conditions
Temperature
VCE = 25 V
f = 10 kHz
TJ = 25°C
Min
Typ
Max
1100
1300
1500
70
80
90
18
20
22
Unit
pF
Switching Characteristics
Characteristic
Symbol
Turn−Off Delay Time
(Resistive)
td (off)
Test
Conditions
VCC = 300 V
IC = 9.0 A
Temperature
Min
Typ
Max
TJ = 25°C
6.0
8.0
10
TJ = 175°C
6.0
8.0
10
TJ = 25°C
4.0
6.0
8.0
TJ = 175°C
8.0
10.5
14
TJ = 25°C
3.0
5.0
7.0
TJ = 175°C
5.0
7.0
9.0
TJ = 25°C
1.5
3.0
4.5
TJ = 175°C
5.0
7.0
10
TJ = 25°C
1.0
1.5
2.0
TJ = 175°C
1.0
1.5
2.0
TJ = 25°C
4.0
6.0
8.0
TJ = 175°C
3.0
5.0
7.0
Unit
RG = 1.0 kΩ
Fall Time
(Resistive)
Turn−Off Delay Time
(Inductive)
tf
td (off)
RL = 33 Ω
VGE = 5.0 V
VCC = 300 V
IC = 9.0 A
RG = 1.0 kΩ
Fall Time
(Inductive)
Turn−On Delay Time
tf
L = 300 µH
td (on)
VCC = 14 V
VGE = 5.0 V
IC = 9.0 A
µSec
RG = 1.0 kΩ
Rise Time
tr
RL = 1.5 Ω
VGE = 5.0 V
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/15/18
Ignition IGBT
Surface Mount > 350V > NGD8205AN
Typical Electrical Characteristics
Figure 1. Self Clamped Inductive Switching
Figure 2. Open Secondary Avalanche Current vs. Temperature
°
20
°
200
10
L
I
100
0
0
2
6
0
10
100
°
Figure 3. Collector−to−Emitter Voltage vs. Junction Temprature
Figure 4. Collector Current vs. Collector−to−Emitter Voltage
60
2.0
I
I
°
I
I
1.0
I
20
I
10
0.0
0
100
0
2
6
°
Figure 5. Collector Current vs. Collector−to−Emitter Voltage
Figure 6. Collector Current vs. Collector−to−Emitter Voltage
60
60
°
°
20
10
10
I
I
20
0
0
2
6
0
0
2
6
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/15/18
Ignition IGBT
Surface Mount > 350V > NGD8205AN
Figure 7. Transfer Characteristics
Figure 8. Collector−to−Emitter Leakage Current vs. Temperature
100000
10000
1000
100
20
°
10
10
1.0
I
°
0
0
1
°
2
0.1
0
°
Figure 9. Gate Threshold Voltage vs.Temperature
Figure 10. Capacitance vs. Collector−to−Emitter Voltage
10000
iss
1000
2.00
100
10
1.00
1.0
0
0.1
100
0
10
1
20
°
,
Figure 11. Typical Open Secondary Latch Current vs Temperature
12
Figure 12. Inductive Switching Fall Time vs. Temperature
12
10
10
t
I
t
t
6
6
t
I
2
2
L
0
0
100
°
100
,
°
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/15/18
Ignition IGBT
Surface Mount > 350V > NGD8205AN
Figure 13. Minimum Pad Transient Thermal Resistance (Non−normalized Junction−to−Ambient)
100
°
0.2
0.1
10
0.02
1
0.01
1
t1
0.1
t2
0.01
0.000001
ʺ 0.1 s
1 2
0.00001
0.0001
0.001
0.01
0.1
11
0
100
1000
Figure 14. Best Case Transient Thermal Resistance (Non−normalized Junction−to−Case Mounted on Cold Plate)
°
10
1
0.2
0.1
0.1
1
t1
0.02
0.01
0.01
0.000001
t2
1 2
0.00001
0.0001
0.001
0.01
0.1
1
10
Figure 14. Best Case Transient Thermal Resistance
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/15/18
Ignition IGBT
Surface Mount > 350V > NGD8205AN
Soldering Footrpint
Dimensions
A
E
b3
6.20
0.244
C
A
B
c2
4
L3
Z
D
12
NOTE 7
b2
e
5.80
0.228
c
SIDE VIEW
b
TOP VIEW
H
DETAIL A
3
L4
0.005 (0.13)
C
M
C
L
L1
DETAIL A
6.17
0.243
SCALE 3:1
Z
GAUGE
PLANE
1.60
0.063
BOTTOM VIEW
H
L2
2.58
0.102
3.00
0.118
SEATING
PLANE
mm
inches
Z
Part Marking System
BOTTOM VIEW
A1
ALTERNATE
CONSTRUCTIONS
1
ROTATED 90 CW
Dim
Inches
Min
Max
Min
Max
A
0.086
0.094
2.18
2.38
A1
0.000
0.005
0.00
0.13
b
0.025
0.035
0.63
0.89
b2
0.028
0.045
0.72
1.14
b3
0.180
0.215
4.57
5.46
c
0.018
0.024
0.46
0.61
c2
0.018
0.024
0.46
0.61
D
0.235
0.245
5.97
6.22
E
0.250
0.265
6.35
6.73
e
0.090 BSC
ORDERING INFORMATION
Device
Package
Shipping†
NGD8205ANT4G
DPAK
(Pb−Free)
2,500 /
Tape & Reel
2.29 BSC
H
0.370
0.410
9.40
10.41
L
0.055
0.070
1.40
1.78
L1
0.114 REF
2.90 REF
L2
0.020 BSC
0.51 BSC
L3
8205AG LF
Millimeters
0.035
0.050
0.89
1.27
L4
−−−
0.040
−−−
1.01
Z
0.155
−−−
3.93
−−−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS,
OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT
EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST
EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H.
Disclaimer Notice - Information furnished is believed to be accurate and
reliable. However, users should independently evaluate the suitability of and
test each product selected for their own applications. Littelfuse products are
not designed for, and may not be used in, all applications. Read complete
Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics.
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/15/18
