NYC226STT1G

NYC226STT1G

  • 厂商:

    HAMLIN

  • 封装:

    SOT-223

  • 描述:

  • 详情介绍
  • 数据手册
  • 价格&库存
NYC226STT1G 数据手册
Thyristors Surface Mount – 400V – 600V > NYC222, NYC226, NYC228 NYC222, NYC226, NYC228 Pb Description Designed and tested for repetitive peak operation required for CD ignition, fuel ignitors, flash circuits, motor controls and low-power switching applications. Features • Blocking Voltage to 600 V • High Surge Current − 15 A • Very Low Forward “On” Voltage at High Current Pin Out • Low-Cost Surface Mount SOT−223 Package • These are Pb−Free Devices Functional Diagram 4 MT 1 MT 2 G 1 2 3 Additional Information Datasheet Resources Samples © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/25/19 Thyristors Surface Mount – 400V – 600V > NYC222, NYC226, NYC228 Maximum Ratings (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit VDRM, VRRM 50 400 600 V On-State RMS Current (180° Conduction Angles; TC = 80°C) IT (RMS) 1.5 A Average On−State Current, (TC = 65°C, f = 60 Hz, Time = 1 sec) IT (RMS) 2.0 A 15 A Peak Repetitive Off−State Voltage (Note 1) (RGK = IK, TJ− 40 to +110°C, Sine Wave, 50 to 60 Hz) NYC222 NYC226 NYC228 Peak Non-repetitive Surge Current, @TA = 25°C, (1/2 Cycle, Sine Wave, 60 Hz) ITSM I2t 0.9 A2s PGM 0.5 W Circuit Fusing Considerations (t = 8.3 ms) Forward Peak Gate Power (Pulse Width ≤ 1.0 sec, TA = 25°C) Forward Average Gate Power (t = 8.3 msec, TA = 25°C) PGM (AV) 0.1 W Forward Peak Gate Current (Pulse Width ≤ 1.0 s, TA = 25°C) IFGM 0.2 A Reverse Peak Gate Voltage (Pulse Width ≤ 1.0 µs, TA = 25°C) VRGM 5.0 V Operating Junction Temperature Range @ Rated VRRM and VDRM TJ -40 to +110 °C Storage Temperature Range Tstg -40 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Symbol Value Unit Thermal Resistance, Junction−to−Ambient PCB Mounted R8JA 156 mW Thermal Resistance, Junction−to−Tab Measured on MT2 Tab Adjacent to Epoxy R8JT 25 °C/W TL 260 °C Maximum Device Temperature for Soldering Purposes for 10 Secs Maximum Electrical Characteristics - OFF (TC = 25°C unless otherwise noted) Characteristic †Peak Repetitive Blocking Current (VAK = VDRM = VRRM; Gate Open) Symbol Min Typ IDRM, IRRM - - 1.0 µA - - 200 mA TJ = 25°C TJ = 110°C Max Unit Electrical Characteristics - ON (TJ = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Peak Forward On-State Voltage (Note 2) (ITM = 2.2 A Peak) TC = 25°C HGate Trigger Current (Note 3) (VD = 12 V, RL = 100 Ω, TC = 25°C) TC =–40°C Gate Trigger Voltage (dc) (Note 3) (VAK = 7 Vdc, RL = 100Ω) TC =–40°C Gate Non−Trigger Voltage (VAK = VDRM, RL = 100 Ω) Holding Current (VAK = 12 V, RGK = 1000 Ω) Initiating Current = 200 mA TC = 25°C TC = 110°C TC = 25°C TC =–40°C Symbol Min Typ VTM − _ IGT VGT VGD IH Max Unit 1.2 1.7 V 30 200 _ _ 500 – – 0.8 – – 1.2 0.1 _ _ _ 2.0 5.0 _ _ 10 µA V V V © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/25/19 Thyristors Surface Mount – 400V – 600V > NYC222, NYC226, NYC228 Dynamic Characteristics Characteristic Symbol Min Typ Max Unit Critical Rate-of-Rise of Off State Voltage (TC = 110°C) dv/dt − 25 − V/µs Critical Rate of Rise of On−State Current (TC = 110°C, IG = 2 x IGT, RGK = 1 kΩ) di/dt − 20 _ A/µs 2. Pulse Width =1.0 ms, Duty Cycle ≤ 1%. 3. RGK Current not included in measurement. Voltage Current Characteristic of SCR Symbol Parameter VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current VTM Maximum On State Voltage IH +Current VTM On State IRRM at VRRM Quadrant 1 Main Terminal 2+ IH Holding Current IH Quadrant 3 Main Terminal 2- Off State +Voltage IDRM at VDRM VTM © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/25/19 Thyristors Surface Mount – 400V – 600V > NYC222, NYC226, NYC228 Current Derating Figure 1. Maximum Case Temperature Figure 3. Typical Forward Voltage Figure 2. Maximum Ambient Temperature Figure 4. Thermal Response © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/25/19 Thyristors Surface Mount – 400V – 600V > NYC222, NYC226, NYC228 Figure 5. Typical Gate Trigger Voltage Figure 6. Typical Gate Trigger Current IGT GATE TRIGGER CURRENT ( μA) 100 50 30 20 10 5.0 3.0 2.0 1.0 -40 -20 0 20 40 60 80 100 110 T JUNCTION TEMPERA TURE (°C) Figure 7. Typical Holding Current I H , HOLDING CURRENT (mA) 10 VAK = 12V R L = 100 5.0 2.0 1.0 -40 -20 0 20 40 0 6 TJ , JUNCTION TEMPERA TURE (ϒC) 80 100 110 P(AV) MAXIMUM AVERAGE POWER DISSIP ATION (WATTS) Figure 8. Power Dissipation 2.0 1.8 1.6 30ϒ 1.4 60ϒ 90ϒ 120 180ϒ ϒ 1.2 1.0 dc 0.8 0.6 0.4 0.2 0 0 0.20 0.4 .6 0.8 1.0 1.2 1.4 1.6 IT(AV) © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/25/19 Thyristors Surface Mount – 400V – 600V > NYC222, NYC226, NYC228 Dimensions Part Marking System D b1 4 SOT-223 Case 318E Style 11 4 HE 12 E 3 C A1 L1 Inches Millimeters Soldering Footprint Min Nom Max Min Nom Max --- --- 0.071 --- --- 1.80 A1 0.001 0.003 0.005 0.02 0.07 0.13 b 0.026 0.030 0.033 0.66 0.75 0.84 b1 0.114 0.118 0.122 2.90 3.00 3.10 A 3 22xST =Device Code x =D, M, or N Y =Year M =Month A =Assembly Site XX =Lot Serial Code G =Pb-Free Package e A Dim 2 1 b e1 0.08 (0003) AC08x 22xST c 0.009 0.011 0.014 0.23 0.29 0.35 D 0.260 0.260 0.264 6.60 6.60 6.71 E 0.130 0.138 0.146 3.30 3.50 3.70 e --- 0.091 --- --- 2.30 --- e1 0.030 0.037 0.045 0.75 0.95 1.15 L1 0.059 0.069 0.079 1.50 1.75 2.00 HE 0.268 0.276 0.283 6.80 7.00 7.20 ø 0° --- 10° 0° --- 10° 3. 8 0.15 2. 0 0.079 2. 3 0.091 6. 3 0.24 8 2. 3 0.091 2. 0 0.079 1. 5 0.059 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SCALE 6: 1 mm in ch es Ordering Information Pin Assignment 1 Main Terminal 1 2 Main Terminal 2 3 Gate 4 Main Terminal 2 Device Package NYC222STT1G SOT-223 (Pb-Free) NYC226STT1G SOT-223 (Pb-Free) NYC228STT1G SOT-223 (Pb-Free) Shipping 1000/Tape & Reel Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/25/19
NYC226STT1G
物料型号为 NYC222STT1G、NYC226STT1G 和 NYC228STT1G,这些是表面贴装型晶闸管。

器件简介包括它们被设计用于重复峰值操作,适用于 CD 点火、燃料点火器、闪光灯电路、电机控制和低功率开关应用。

引脚分配为 1 号和 4 号为主终端 2,2 号为主终端 1,3 号为门极。

参数特性包括 600V 的阻断电压、15A 的高浪涌电流、低正向导通电压、低成本表面贴装 SOT-223 封装,并且是无铅设备。

功能详解涉及电气特性、热特性和动态特性,包括在不同条件下的导通电压、门极触发电流、门极触发电压等。

应用信息包括器件适用于低功率开关和电机控制等。

封装信息为 SOT-223 封装,尺寸和公差按照 ANSI Y14.5M 标准。
NYC226STT1G 价格&库存

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NYC226STT1G
  •  国内价格 香港价格
  • 1000+2.147471000+0.27685
  • 2000+2.068592000+0.26668

库存:0

NYC226STT1G
    •  国内价格 香港价格
    • 1000+2.393061000+0.30852
    • 2000+2.181742000+0.28127
    • 3000+2.074073000+0.26739
    • 5000+1.953015000+0.25178
    • 7000+1.905657000+0.24568

    库存:4226

    NYC226STT1G
    •  国内价格 香港价格
    • 1+9.798921+1.26327
    • 10+6.1088510+0.78755
    • 100+3.99354100+0.51485
    • 500+3.08470500+0.39768

    库存:4226