P6SMBJ47A

Silicon Avalanche Diodes 600W Surface Mount Transient Voltage Supressors RoHS P6SMBJ Series ® FEATURES • RoHS compliant • For surface mounted applications in order to optimize board space • Low profile package • Built-in strain relief • Glass passivated junction • Low lead inductance TE • Excellent clamping capability • Repetition Rate (duty cycle): 0.01% • Fast response time: typically less than 1.0ps from 0 Volts to BV for unidirectional types LE • Typical IR less than 1 µmA above 10V • High Temperature soldering: 250˚C/10 seconds at terminals Agency File Number: E128662 SYMBOL VALUE UNIT Peak pulse power Dissipation on 10/1000µs waveform (note 1,2, FIG.1) PPPM Min 600 Watts Peak pulse current of on 10\1000µs waveform (note 1, FIG.3) IPPM Peak forward Surge Current, 8.3ms Single Half SIne Wave Superimposed on Rated Load, (JEDEC Method) (note 2.3) IPSM PARAMETER B SO Agency Approvals: Recognized under the Components Program of Underwriters Laboratories. MAXIMUM RATINGS AND CHARACTERISTICS @25˚C AMBIENT TEMPERATURE (unless otherwise noted) O Operating junction and Storage Temperature Range ORDERING INFORMATION P6SMBJ CA Voltage Bi-Directional 5% Voltage Tolerance 100 Tj, TsTG -55 to +150 Amps °C Note 1. Non-repetitive current pulse, per Fig.3 and derated above TA= 25˚C per Fig.2 Note 2. Mounted on 5.0mm2(0.03mm thick) Copper Pads to each terminal Note 3. 8.3 ms single half sine-wave, or equivalent square wave, Duty cycle= 4 pulses per minute Mechanical Specifications: Weight: Case: Mounting Position: Polarity: Tape and reeled (3000 pcs) Terminal: Standard Packaging: 266 SEE TABLE 1 Amps w w w. l i t t e l f u s e . c o m 0.003ounce, 0.093 gram JEDEC DO-214AA Molded Plastic over glass passivated junction Any Color band denotes cathode except Bidirectional Solder Plated solderable per MIL-STD-750, Method 2026 12mm tape (EIA STF RS-481) Silicon Avalanche Diodes 600W Surface Mount Transient Voltage Supressors RoHS P6SMBJ Series ® ELECTRICAL SPECIFICATION @ Tamb 25°C 6V8CA 7V5CA 8V2CA 9V1CA 10CA 11CA 12CA 13CA 15CA 16CA 18CA 20CA 22CA 24CA 27CA 30CA 33CA 36CA 39CA 43CA 47CA 51CA 56CA 62CA 68CA 75CA 82CA 91CA 100CA 110CA 120CA 130CA 150CA 160CA 170CA 180CA 200CA 220CA 250CA 300CA 350CA 400CA 440CA 480CA 510CA 530CA 540CA 550CA 5.80 6.40 7.02 7.78 8.55 9.40 10.20 11.10 12.80 13.60 15.30 17.10 18.80 20.50 23.10 25.60 28.20 30.80 33.30 36.80 40.20 43.60 47.80 53.00 58.10 64.10 70.10 77.80 85.50 94.00 102.00 111.00 128.00 136.00 145.00 154.00 171.00 185.00 214.00 256.00 300.00 342.00 376.00 408.00 434.00 477.00 459.00 495.00 MIN 6.45 7.13 7.79 8.65 9.50 10.50 11.40 12.40 14.30 15.20 17.10 19.00 20.90 22.80 25.70 28.50 31.40 34.20 37.10 40.90 44.70 48.50 53.20 58.90 64.60 71.30 77.90 86.50 95.00 105.00 114.00 124.00 143.00 152.00 162.00 171.00 190.00 209.00 237.00 285.00 332.00 380.00 418.00 456.00 485.00 503.50 513.00 522.50 MAX 7.14 7.88 8.61 9.55 10.50 11.60 12.60 13.70 15.80 16.80 18.90 21.00 23.10 25.20 28.40 31.50 34.70 37.80 41.00 45.20 49.40 53.60 58.80 65.10 71.40 78.80 86.10 95.50 105.00 116.00 126.00 137.00 158.00 168.00 179.00 189.00 210.00 231.00 263.00 315.00 368.00 420.00 462.00 504.00 535.00 556.50 567.00 577.50 10 10 10 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 Maximum Clamping Voltage VC @ IPP (Volts) 10.5 11.3 12.1 13.4 14.5 15.6 16.7 18.2 21.2 22.5 25.5 27.7 30.6 33.2 37.5 41.4 45.7 49.9 53.9 59.3 64.8 70.1 77.0 85.0 92.0 103.0 113.0 125.0 137.0 152.0 165.0 179.0 207.0 219.0 234.0 246.0 274.0 328.0 344.0 414.0 482.0 548.0 602.0 658.0 698.0 725.0 740.0 760.0 Maximum Peak Pulse Current IPP (A) Maximum Reverse Leakage IR @ VR (µA) 58.1 54.0 50.4 45.5 42.1 39.1 36.5 33.5 28.8 27.1 24.2 22.0 19.9 18.4 16.3 14.7 13.3 12.2 11.3 10.3 9.4 8.7 7.9 7.2 6.6 5.9 5.4 4.9 4.5 4.0 3.7 3.4 2.9 2.8 2.6 2.5 2.2 1.9 1.8 1.5 1.3 1.1 1.0 0.9 0.9 0.8 0.8 0.8 1000 500 200 50 10 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 6 SILICON DIODE ARRAYS BI 6V8A 7V5A 8V2A 9V1A 10A 11A 12A 13A 15A 16A 18A 20A 22A 24A 27A 30A 33A 36A 39A 43A 47A 51A 56A 62A 68A 75A 82A 91A 100A 110A 120A 130A 150A 160A 170A 180A 200A 220A 250A 300A 350A 400A 440A 480A 510A 530A 540A 550A Test Current IT (mA) TE P6SMBJ6.8CA P6SMBJ7.5CA P6SMBJ8.2CA P6SMBJ9.1CA P6SMBJ10CA P6SMBJ11CA P6SMBJ12CA P6SMBJ13CA P6SMBJ15CA P6SMBJ16CA P6SMBJ18CA P6SMBJ20CA P6SMBJ22CA P6SMBJ24CA P6SMBJ27CA P6SMBJ30CA P6SMBJ33CA P6SMBJ36CA P6SMBJ39CA P6SMBJ43CA P6SMBJ47CA P6SMBJ51CA P6SMBJ56CA P6SMBJ62CA P6SMBJ68CA P6SMBJ75CA P6SMBJ82CA P6SMBJ91CA P6SMBJ100CA P6SMBJ110CA P6SMBJ120CA P6SMBJ130CA P6SMBJ150CA P6SMBJ160CA P6SMBJ170CA P6SMBJ180CA P6SMBJ200CA P6SMBJ220CA P6SMBJ250CA P6SMBJ300CA P6SMBJ350CA P6SMBJ400CA P6SMBJ440CA P6SMBJ480CA P6SMBJ510CA P6SMBJ530CA P6SMBJ540CA P6SMBJ550CA Breakdown Voltage VBR (Volts) @ IT LE UNI Reverse Stand off Voltage VR (Volts) Device Marking Code B SO P6SMBJ6.8A P6SMBJ7.5A P6SMBJ8.2A P6SMBJ9.1A P6SMBJ10A P6SMBJ11A P6SMBJ12A P6SMBJ13A P6SMBJ15A P6SMBJ16A P6SMBJ18A P6SMBJ20A P6SMBJ22A P6SMBJ24A P6SMBJ27A P6SMBJ30A P6SMBJ33A P6SMBJ36A P6SMBJ39A P6SMBJ43A P6SMBJ47A P6SMBJ51A P6SMBJ56A P6SMBJ62A P6SMBJ68A P6SMBJ75A P6SMBJ82A P6SMBJ91A P6SMBJ100A P6SMBJ110A P6SMBJ120A P6SMBJ130A P6SMBJ150A P6SMBJ160A P6SMBJ170A P6SMBJ180A P6SMBJ200A P6SMBJ220A P6SMBJ250A P6SMBJ300A P6SMBJ350A P6SMBJ400A P6SMBJ440A P6SMBJ480A P6SMBJ510A P6SMBJ530A P6SMBJ540A P6SMBJ550A Part Number (Bi) O Part Number (Uni) For bidirectional type having Vrwm of 10 volts and less, the IR limit is double. For parts without A (VBR is ± 10%). w w w. l i t t e l f u s e . c o m 267 Silicon Avalanche Diodes 600W Surface Mount Transient Voltage Supressors P6SMBJ Series RoHS ® Ratings and Characteristic Curves TA=25˚C unless otherwise noted 10 0.2x0.2"(5.0x5.0mm) Copper Pad Areas 1 0.1 0.1µs 1.0µs 10µs 100µs 1.0ms 100 75 50 25 0 75 100 125 150 175 200 Fig. 2 Pulse Derating Curve LE 6000 150 tr=10µsec CJ-Junction Capacitance (pF) TJ=25˚C Pulse Width(td) is defined as the point where the peak current decays to 50% of IPPM Peak Value IPPM Half Value IPPM 2 50 10/1000µsec. Waveform as defined by R.E.A td 0 2.0 3.0 4.0 TJ=25˚C f=1.0MHZ Vsig=50mVp-p Uni-Directional Bi-Directional 1.0 10 200 100 VWM-Reverse Stand-Off Voltage (V) Fig. 4- Typical Junction Capacitance Fig. 3 Pulse Waveform 100 IPSM-Peak Forward Surge Current (A) 200 10 1.0 0.1 0.001 VR, Measured at Stand-Off Voltage, VWM 100 10 1.0 O 0 Measured at Zero Bias 1000 B SO 100 0.01 0.1 1 10 100 1000 8.3 Single Half Sine-Wave (JEDEC Method) Undirectional Only 100 10 1 Fig. 5- Typ. Transient Thermal Impedance 10 100 Number of Cycles at 60Hz tp- Pulse Duration(sec) 268 50 TA- Ambient Temperature (˚C) Fig. 1 Peak Pulse Power Rating Transient Thermal Impedance (˚C/W) 25 0 10ms td- Pulse Width (sec.) IPPM- Peak Pulse Current, % I RSM TE Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % PPPM- Peak Pulse Power (KW) 100 Fig. 6- Maximum Non-Repetitive Peak Forward Surge Current w w w. l i t t e l f u s e . c o m Silicon Avalanche Diodes 600W Surface Mount Transient Voltage Supressors RoHS P6SMBJ Series ® Package Outline Dimensions and Pad Layout 2.16 2.74 2.16 6 SILICON DIODE ARRAYS TE 2.26 Solder Pads O B SO LE All dimensions in mm w w w. l i t t e l f u s e . c o m 269