Q6012NH5TP

Q6012NH5TP

  • 厂商:

    HAMLIN

  • 封装:

    TO-263(D²Pak)

  • 描述:

    Q6012NH5TP

  • 详情介绍
  • 数据手册
  • 价格&库存
Q6012NH5TP 数据手册
Thyristors 12 Amp Alternistor (High Commutation) Triacs Qxx12xHx Series RoHS Description This 12 Amp bidirectional solid state switch series is designed for AC switching and phase control applications such as motor speed and temperature modulation controls, lighting controls, and static switching relays. Standard alternistor triac components operate with in-phase signals in Quadrants I or III and ONLY unipolar negative gate pulses for Quadrant II or III. The alternistor triac will not operate in Quadrant IV. These are used in circuit applications requiring a high dv/dt capability. Features & Benefits • RoHS-compliant Agency Approval Agency • N  o contacts to wear out from reaction of switching events • G  lass – passivated junctions Agency File Number • V  oltage capability up to 1000 V E71639* * - L Package Only • S  urge capability up to 120 A Main Features Symbol Value Unit IT(RMS) 12 A VDRM / VRRM 400, 600, 800 or 1000 V IGT (Q1) 10 or 50 mA Schematic Symbol • T  he L-package has an isolation rating of 2500VRMS • S  olid-state switching eliminates arcing or contact bounce that create voltage transients • R  estricted (or limited) RFI generation, depending on activation point sine wave • R  equires only a small gate activation pulse in each half-cycle • R  ecognized to UL 1557 as an Electrically Isolated Semiconductor Device Applications MT2 MT1 G Excellent for AC switching and phase control applications such as heating, lighting, and motor speed controls. Typical applications are AC solid-state switches, light dimmers, power tools, lawn care equipment, home/brown goods and white goods appliances. Alternistor Triacs (no snubber required) are used in applications with extremely inductive loads requiring highest commutation performance. Internally constructed isolated packages are offered for ease of heat sinking with highest isolation voltage. Additional Information Datasheet Resources Samples ©2019 Littelfuse, Inc Specifications are subject to change without notice. Revised: GD.10/08/20 Thyristors 12 Amp Alternistor (High Commutation) Triacs Absolute Maximum Ratings — Alternistor (3 Quadrants) Symbol Parameter Qxx12LHy Qxx12RHy Qxx12NHy TC = 90°C Value Unit 12 A IT(RMS) RMS on-state current (full sine wave) ITSM Non repetitive surge peak on-state current (full cycle, TJ initial = 25°C) f = 50 Hz t = 20 ms 110 f = 60 Hz t = 16.7 ms 120 I2t I2t Value for fusing - tp = 8.3 ms 60 A2s di/dt Critical rate of rise of on-state current f = 120 Hz TJ = 125°C 70 A/μs IGTM Peak gate trigger current tp=20μs TJ = 125°C 4 A PG(AV) Average gate power dissipation - TJ = 125°C 0.5 W TC = 105°C A Tstg Storage temperature range - -40 to 150 °C TJ Operating junction temperature range - -40 to 125 °C Note: xx = voltage/10, y = sensitivity Electrical Characteristics (TJ = 25°C, unless otherwise specified) — Alternistor Triac (3 Quadrants) Symbol Test Conditions Quadrant Qxx12xH2 Qxx12xH5 Unit IGT VD = 12V RL = 60 Ω I – II – III MAX. 10 50 mA VGT VD = 12V RL = 60 Ω I – II – III MAX. 1.3 1.3 V VGD VD = VDRM RL = 3.3 kΩ TJ = 125°C I – II – III MIN. 0.2 0.2 V 15 50 mA 300 750 IH IT = 100mA MAX. 400V dv/dt VD = VDRM Gate Open TJ = 125°C 600V 800V VD = VDRM Gate Open TJ = 100°C MIN. 1000V 200 650 150 500 V/μs 150 300 (dv/dt)c (di/dt)c = 6.5 A/ms TJ = 125°C MIN. 2 30 V/μs tgt IG = 2 x IGT PW = 15μs IT = 17.0 A(pk) TYP. 4 4 μs Value Unit 1.60 V 10 μA Static Characteristics Symbol Test Conditions VTM ITM = 17.0A tp = 380 µs IDRM IRRM VD = VDRM / VRRM MAX. TJ = 25°C 400-1000V TJ = 125°C 400-800V TJ = 100°C 1000V MAX. 2 mA 3 Thermal Resistances Symbol Parameter RƟ(J-C) Junction to case (AC) RƟ(J-A) Junction to ambient (AC) Value Qxx12RHy Qxx12NHy Qxx12LHy 2.3 Qxx12RHy 45 Qxx12LHy 90 1.2 Unit °C/W °C/W Note: xx = voltage/10, y = sensitivity ©2019 Littelfuse, Inc Specifications are subject to change without notice. Revised: GD.10/08/20 Thyristors 12 Amp Alternistor (High Commutation) Triacs Figure 2: Normalized  DC Gate Trigger Current for All Quadrants vs. Junction Temperature Figure 1: Definition of Quadrants ALL POLARITIES ARE REFERENCED TO MT1 MT2 (-) + IGT GATE (+) MT2 IGT GATE MT1 REF - IGT (-) MT1 REF QII QI QIII QIV MT2 IGT GATE (+) MT1 REF 4.0 Ratio of IGT / IGT (TJ = 25 ºC) MT2 POSITIVE (Positive Half Cycle) + IGT MT2 3.0 2.0 1.0 IGT GATE 0.0 MT1 - MT2 NEGATIVE (Negative Half Cycle) -65 -40 -15 10 35 60 85 110 Junction Temperature (TJ) - C REF Note: Alternistors will not operate in QIV Figure 3: Normalized DC Holding Current vs. Junction Temperature Figure 4: Normalized  DC Gate Trigger Voltage for All Quadrants vs. Junction Temperature 2.0 Ratio of VGT / VGT(TJ = 25ºC) Ratio of IH / IH (TJ = 25ºC) 4.0 3.0 2.0 1.0 0.0 -65 -40 -15 10 35 60 85 110 1.5 1.0 0.5 0.0 -65 -40 -15 Junction Temperature (TJ) - ºC Figure 5: Power Dissipation (Typical) vs. RMS On-State Current 35 60 85 110 Figure 6: Maximum  Allowable Case Temperature vs. On-State Current 130 14 CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360° 12 Maximum Allowable Case Temperature (TC) - °C Average On-State Power Dissipation [PD(AV)] -- Watts 10 Junction Temperature (TJ) - ºC Qxx12RH5 Qxx12NH5 120 10 110 8 100 6 4 2 0 0 2 4 6 8 10 RMS On-State Current [IT(RMS)] -- Amps 12 14 Qxx12LH5 90 80 CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360° 70 60 0 2 4 6 8 10 12 14 RMS On-State Current [IT(RMS)] - Amps ©2019 Littelfuse, Inc Specifications are subject to change without notice. Revised: GD.10/08/20 Thyristors 12 Amp Alternistor (High Commutation) Triacs Figure 7: Maximum Allowable Ambient Temperature vs. On-State Current Figure 8: On-State  Current vs. On-State Voltage (Typical) 20 CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360 FREE AIR RATING - No HEAT SINK 110 100 Positive or Negative Instantaneous On-State Current (IT) - AMPS Max Allowable Ambient Temperature (TA) - ºC 120 90 80 70 60 50 40 30 20 18 TC = 25ºC 16 14 12 10 8 6 4 2 0 0.7 0. 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.8 0.9 1.0 1.1 1.2 1.3 1.4 Positive or Negative Instantaneous On-State Voltage (VT) - Volts RMS On-State Current [IT(RMS)] - AMPS Figure 9: Surge Peak On-State Current vs. Number of Cycles Peak Surge (Non-Repetitive On-State Current (ITSM) - AMPS 1000 Supply Frequency: 60Hz Sinusoidal Load: Resistive RMS On-State Current [I T(RMS) : Maximum] Rated Value at Specific Case Temperature 100 Notes: 1. G  ate control may be lost during and immediately following surge current interval. 2. O  verload may not be repeated until junction temperature has returned to steady-state rated value. 10 1 1 10 100 1000 Surge Current Duration - Full Cycles ©2019 Littelfuse, Inc Specifications are subject to change without notice. Revised: GD.10/14/20 Thyristors 12 Amp Alternistor (High Commutation) Triacs Soldering Parameters Pb – Free assembly Pre Heat - Temperature Min (Ts(min)) 150°C - Temperature Max (Ts(max)) 200°C - Time (min to max) (ts) 60 – 180 secs Average ramp up rate (Liquidus Temp) (TL) to peak 5°C/second max TS(max) to TL - Ramp-up Rate Reflow 5°C/second max - Temperature (TL) (Liquidus) 217°C - Time (min to max) (ts) 60 – 150 seconds Peak Temperature (TP) 260+0/-5 °C Time within 5°C of actual peak Temperature (tp) 20 – 40 seconds Ramp-down Rate 5°C/second max Time 25°C to peak Temperature (TP) 8 minutes Max. Do not exceed 280°C Physical Specifications Terminal Finish Body Material Terminal Material 100% Matte Tin-plated UL Recognized compound meeting flammability rating V-0 Copper Alloy Design Considerations Careful selection of the correct component for the application’s operating parameters and environment will go a long way toward extending the operating life of the Thyristor. Good design practice should limit the maximum continuous current through the main terminals to 75% of the component rating. Other ways to ensure long life for a power discrete semiconductor are proper heat sinking and selection of voltage ratings for worst case conditions. Overheating, overvoltage (including dv/dt), and surge currents are the main killers of semiconductors. Correct mounting, soldering, and forming of the leads also help protect against component damage. tP TP Temperature Reflow Condition Ramp-up TL tL TS(max) Preheat TS(min) 25 Ramp-do Ramp-down tS time to peak temperature Time Environmental Specifications Test AC Blocking Temperature Cycling Temperature/Humidity High Temp Storage Low-Temp Storage Specifications and Conditions MIL-STD-750, M-1040, Cond A Applied Peak AC voltage @ 125°C for 1008 hours MIL-STD-750, M-1051, 100 cycles; -40°C to +150°C; 15-min dwell time EIA / JEDEC, JESD22-A101 1008 hours; 320V - DC: 85°C; 85% rel humidity MIL-STD-750, M-1031, 1008 hours; 150°C 1008 hours; -40°C Resistance to Solder Heat MIL-STD-750 Method 2031 Solderability ANSI/J-STD-002, category 3, Test A Lead Bend MIL-STD-750, M-2036 Cond E ©2019 Littelfuse, Inc Specifications are subject to change without notice. Revised: GD.10/14/20 Thyristors 12 Amp Alternistor (High Commutation) Triacs Dimensions — TO-220AB (R-Package) — Non-Isolated Mounting Tab Common with Center Lead T C MEA SURING POIN T A Ø E AREA (REF .) 0. 17 IN 2 O Dimension 8.13 .320 P A MT2 B C 13.36 .526 D 7.01 .276 NOTCH IN GATE LEAD TO ID. NON-ISOLATED TAB F R G L H N K J MT1 M MT2 GA TE Inches Millimeters Min Max Min Max 0.380 0.420 9.65 10.67 2.92 B 0.105 0.115 2.67 C 0.230 0.250 5.84 6.35 D 0.590 0.620 14.99 15.75 E 0.142 0.147 3.61 3.73 F 0.110 0.130 2.79 3.30 G 0.540 0.575 13.72 14.61 H 0.025 0.035 0.64 0.89 J 0.195 0.205 4.95 5.21 K 0.095 0.105 2.41 2.67 L 0.060 0.075 1.52 1.91 M 0.085 0.095 2.16 2.41 N 0.018 0.024 0.46 0.61 O 0.178 0.188 4.52 4.78 P 0.045 0.060 1.14 1.52 R 0.038 0.048 0.97 1.22 Min Max Min Max 0.380 0.420 9.65 10.67 2.92 Note: Maximum torque to be applied to mounting tab is 8 in-lbs. (0.904 Nm). Dimensions — TO-220AB (L-Package) — Isolated Mounting Tab T C MEA SURING POI NT O A Ø E P AREA (REF .) 0. 17 IN 2 8.13 .320 Dimension A Inches Millimeters B 0.105 0.115 2.67 C 0.230 0.250 5.84 6.35 D 0.590 0.620 14.99 15.75 E 0.142 0.147 3.61 3.73 F 0.110 0.130 2.79 3.30 G 0.540 0.575 13.72 14.61 H 0.025 0.035 0.64 0.89 J 0.195 0.205 4.95 5.21 K 0.095 0.105 2.41 2.67 L 0.060 0.075 1.52 1.91 L M 0.085 0.095 2.16 2.41 H N 0.018 0.024 0.46 0.61 O 0.178 0.188 4.52 4.78 P 0.045 0.060 1.14 1.52 R 0.038 0.048 0.97 1.22 B C 13.36 .526 D 7.01 .276 F R G K N J MT1 M MT2 GA TE Note: Maximum torque to be applied to mounting tab is 8 in-lbs. (0.904 Nm). ©2019 Littelfuse, Inc Specifications are subject to change without notice. Revised: GD.10/14/20 Thyristors 12 Amp Alternistor (High Commutation) Triacs Dimensions — TO-263AB (N-Package) — D2Pak Surface Mount TC MEASURING POINT AREA: 0. 11 IN2 C V B Dimension E MT2 7.01 .276 A 8.41 .331 S W U G J K GATE MT1 8.13 .320 H D F 1168 .460 2.16 .085 7.01 .276 7.01 .276 Inches Millimeters Min Max Min A 0.360 0.370 9.14 Max 9.40 B 0.380 0.420 9.65 10.67 C 0.178 0.188 4.52 4.78 D 0.025 0.035 0.64 0.89 E 0.045 0.060 1.14 1.52 F 0.060 0.075 1.52 1.91 G 0.095 0.105 2.41 2.67 H 0.092 0.102 2.34 2.59 J 0.018 0.024 0.46 0.61 K 0.090 0.110 2.29 2.79 S 0.590 0.625 14.99 15.88 V 0.035 0.045 0.89 1.14 U 0.002 0.010 0.05 0.25 W 0.040 0.070 1.02 1.78 16.89 .665 8.89 .350 1.40 .055 3.81 .150 2.03 .080 6.60 .260 Product Selector Part Number Voltage Gate Sensitivity Quadrants 400V 600V 800V 1000V Type I – II – III Package Qxx12LH2 X X X 10 mA Alternistor Triac TO-220L Qxx12RH2 X X X 10 mA Alternistor Triac TO-220R Qxx12NH2 X X X 10 mA Alternistor Triac TO-263 D²-PAK Qxx12LH5 X X X X 50 mA Alternistor Triac TO-220L Qxx12RH5 X X X X 50 mA Alternistor Triac TO-220R Qxx12NH5 X X X X 50 mA Alternistor Triac TO-263 D²-PAK Packing Options Part Number Marking Weight Packing Mode Base Quantity Qxx12L/RHyTP Qxx12L/RHy 2.2 g Tube Pack 1000 (50 per tube) Qxx12NHyTP Qxx12NHy 1.6 g Tube 1000 (50 per tube) Qxx12NHyRP Qxx12NHy 1.6 g Embossed Carrier 500 Note: xx = Voltage/10; y = Sensitivity ©2019 Littelfuse, Inc Specifications are subject to change without notice. Revised: GD.10/14/20 Thyristors 12 Amp Alternistor (High Commutation) Triacs TO-263 Embossed Carrier Reel Pack (RP) Meets all EIA-481-2 Standards 0.63 (16.0) 0.157 (4.0) 0.059 DI A (1.5) 0.945 (24.0) 0.827 (21.0) Gate MT1 * * Co ver tape MT2 12.99 (330.0) 0.512 (13.0) Arbor Hole Dia. Dimensions are in inches (and millimeters). 1.01 (25.7) Direction of Feed Part Numbering System Part Marking System Q 60 12 L H5 56 Device Type Q: Alternistor Voltage Rating 40: 400V 60: 600V 80: 800V K0: 1000V Current Rating 12: 12A TO-220 AB - (L and R Package) TO-263 AB - (N Package) Lead Form Dimensions xx: Lead Form Option Sensitivity & type H2: 10mA (QI, II, III) H5: 50mA (QI, II, III) Q6012RH5 YMXXX ® Package Type L : TO-220 Isolated R : TO-220 Non-Isolated N : TO-263 (D2Pak) Date Code Marking Y:Year Code M: Month Code XXX: Lot Trace Code Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimier-electronics. ©2019 Littelfuse, Inc Specifications are subject to change without notice. Revised: GD.10/14/20
Q6012NH5TP
物料型号:Qxx12xHx Series,其中xx代表电压等级除以10,y代表灵敏度。

器件简介:这是一款12安培双向固态开关系列,专为交流开关和相位控制应用设计,如电机速度和温度调节控制、照明控制和静态开关继电器。

引脚分配:文档中提供了MT1和MT2的标识,但没有具体引脚分配图。

参数特性: - LRMS(额定正弦波纹电流):12A - VCVM(电压能力):400V、600V、800V或1000V - 门极触发电流和功率消耗等

功能详解:该器件适用于需要高di/dt能力的电路应用,如AC固态开关、调光器、电动工具、草坪护理设备、家用电器等。

应用信息:非常适合交流开关和相位控制应用,如加热、照明和电机速度控制。

封装信息:提供了多种封装选项,包括TO-220L、TO-220R和TO-263D2-PAK,每种封装都有其特定的隔离电压和热性能。
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