S6X8BBSRP

Thyristors Datasheet SxX8BBS Series EV Series 0.8 Amp Sensitive SCRs RoHS Description This new sensitive SCR component series offers 600V V DRM and 0.8A IT(RMS) capability in the smallest package size in the industry, SOT23. It is specifically designed for GFCI (Ground Fault Circuit Interrupter) applications. All SCRs junctions are glass-passivated to ensure long term reliability and parametric stability. Features ■ High dv/dt noise immunity ■ Very compact SOT23 SMT package ■ Improved turn-off time (tq) < 25 μsec ■ Surge current capability up to 12A @ 60Hz Main Features Symbol Value Unit IT(RMS) 0.8 A VDRM / VRRM 600 V IGT 200 μA ■ RoHS compliant and HalogenFree Applications The SxX8BBS series is specifically designed for GFCI (Ground Fault Circuit Interrupter) and applications. Schematic Symbol Pin out G K ■ Sensitive gate for direct microprocessor interface ■ Blocking voltage ( VDRM / VRRM ) capability - up to 600V Anode 3 A 1 2 Cathode Gate Absolute Maximum Ratings Symbol Parameter Pw=100μs Value Unit 700 V A VDSM/ VRSM Peak non-repetitive blocking voltage IT(RMS) RMS on-state current (full sine wave) TC = 80°C 0.8 IT(AV) Average on-state current TC = 80°C 0.51 A ITSM Non repetitive surge peak on-state current (Single cycle, TJ initial = 25°C) f= 50Hz 10 A f= 60Hz 12 A I2t I2t Value for fusing tp = 10 ms f= 50 Hz 0.5 A2s tp = 8.3 ms f= 60 Hz 0.6 A 2s di/dt Critical rate of rise of on-state current IG = 10mA 60 Hz TJ = 125°C 80 A/µs IGM Peak Gate Current tp = 20 μs TJ = 125°C 1.0 A PG(AV) Average gate power dissipation — TJ = 125°C 0.1 W Tstg Storage junction temperature range — — -40 to 150 °C TJ Operating junction temperature range — — -40 to 125 °C 1 © 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 08/03/21 Thyristors Datasheet SxX8BBS Series EV Series 0.8 Amp Sensitive SCRs Electrical Characteristics (TJ = 25°C, unless otherwise specified) Symbol Description Test Conditions Limit Value Unit IGT DC Gate Trigger Current VD = 6V, RL = 100 Ω VGT DC Gate Trigger Voltage VD = 6V, RL = 100 Ω VGRM Peak Reverse Gate Voltage IRG = 10μA MIN. 8 V IH Holding Current Initial Current = 20mA MAX. 10 mA (dv/dt)s Critical Rate-of-Rise of Off-State Voltage TJ = 125°C VD = 67%VDRM /VRRM Exp. Waveform, RGK =1 kΩ MIN. 50 V/μs VGD Gate Non-Trigger Voltage VD = VDRM, RGK =1 kΩ TJ = 125°C MIN. 0.2 V tq Turn-Off Time IT=0.5A MAX. 25 μs tgt Turn-On Time IG=10mA,Pw= 15μsec, IT = 1.6A(pk) TYP. 2.0 μs MIN. 50 μA MAX. 200 μA MAX. 0.8 V Static Characteristics (TJ = 25°C, unless otherwise specified) Symbol Description Test Conditions Limit Value Unit VTM Peak On-State Voltage ITM = 1.6A (pk) MAX. 1.70 V IDRM/IRRM VDRM/VRRM TJ = 25°C MAX. 5 μA TJ = 125°C MAX. 100 μA Thermal Resistances Symbol Description Value Unit RƟ(JC) Junction to case (AC) 45 °C/ W RƟ(J-A) Junction to ambient 220 °C/ W Figure 1: Normalized DC Gate Trigger Current vs. Junction Temperature Figure 2: Normalized DC Holding Current vs. Junction Temperature 1.8 3.00 1.6 IH 2.00 1.50 IH (TJ = 25°C) 1.4 Ratio of IGT Ratio of IGT (TJ = 25°C) 2.50 1.00 0.50 1.2 1 0.8 0.6 0.4 0.2 0.00 -40 -15 10 35 60 85 110 0 135 -40 Junction Temperature (TJ) - °C -15 10 35 60 85 110 135 Junction Temperature (TJ) - °C 2 © 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 08/03/21 Thyristors Datasheet SxX8BBS Series EV Series 0.8 Amp Sensitive SCRs Figure 3: Normalized DC Gate Trigger Voltage vs. Junction Temperature Figure 4: On-State Current vs. On-State Voltage (Typical) 1 0.8 0.6 0.4 0.2 0 -40 -15 10 35 60 85 110 4 Intantaneous On -state Current (IT) – Amps VGT (TJ = 25°C) 1.2 Ratio of VGT 1.4 135 3.5 3 2.5 2 1.5 1 0.5 0 0.8 0.9 1 1.1 1.2 130 0.8 Maximum Allowable Case Temperature (TC) - oC CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180o 0.7 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 Figure 6: Maximum Allowable Case Temperature vs. On-State Current Figure 5: Power Dissipation (Typical) vs. RMS On-State Current Average On-state Power Dissipation [PD(AV)] - Watts 0.7 Instantaneous On -state Voltage (VT ) – Volts Junction Temperature (TJ) - °C CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180o CASE TEMPERATURE: Measured as shown on dimensional drawings 120 0.6 110 100 0.5 0.4 0.3 0.2 0.1 90 80 70 60 50 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 RMS On-state Current [IT(RMS)] - Amps RMS On-state Current [IT(RMS)] - Amps Figure 7: Surge Peak On-State Current vs. Number of Cycles Peak Surge (Non-repetitive) On-State Current (IT S M) – Amps 20 10 Supply Frequency: 60Hz Sinusoidal Load: Resistive RMS On-State Current [IT(RMS)]: Max Rated Value at Specific Case Temperature 0.8 AD Notes: 1. Gate control may be lost during and immediately following surge current interval. 2. Overload may not be repeated until junction temperature has returned to steady-state rated value. evi ces 1 1 10 100 1000 Surge Current Duration - Full Cycle 3 © 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 08/03/21 Thyristors Datasheet SxX8BBS Series EV Series 0.8 Amp Sensitive SCRs Figure 9: Static dv/dt vs. CGK vs. Juntion Temperature Figure 8: Static dv/dt vs. RGK vs. Junction Temperature 5000 5000 25ºC 1000 Typical dv/dt value (V/µs) Typical dv/dt Value (V/µs) VD=400V 25ºC 125ºC 100 85ºC 10 85ºC 1000 125ºC 100 10 VD=400V RGK=1kΩ 1 100 1 1000 10000 1 50 10 RGK Resistance (Ω) CGK Value (nF) Soldering Parameters Pre Heat Pb – Free assembly - Temperature Min (Ts(min)) 150°C - Temperature Max (Ts(max)) 200°C - Time (min to max) (ts) 60 – 120 secs Average ramp up rate (Liquidus Temp) (TL) to peak 3°C/second max TS(max) to TL - Ramp-up Rate Reflow 5°C/second max - Temperature (TL) (Liquidus) 217°C - Time (min to max) (ts) 60 – 150 seconds Peak Temperature (TP) 260 Time within 5°C of actual peak Temperature (tp) 30 seconds Ramp-down Rate 6°C/second max Time 25°C to peak Temperature (TP) 8 minutes Max. Do not exceed 260°C +0/-5 tP TP Temperature Reflow Condition tL TS(max) Preheat TS(min) °C 25 4 Ramp-up TL Ramp-do Ramp-down tS time to peak temperature Time © 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 08/03/21 Thyristors Datasheet SxX8BBS Series EV Series 0.8 Amp Sensitive SCRs Physical Specifications Reliability/Environmental Tests Terminal Finish 100% Matte Tin-plated. Body Material UL Recognized compound meeting flammability rating V-0. Lead Material Copper Alloy Test Specifications and Conditions HTRB (AC Blocking) MIL-STD-750, M-1040, Cond A Applied Peak AC voltage @ VDRM @ 125°C for 1008 hours Temperature Cycling MIL-STD-750, M-1051, 100 cycles; -55°C to +150°C; 15-min dwell-time H3TRB EIA / JEDEC, JESD22-A101 1008 hours; 160V - DC: 85°C; 85% rel humidity UHAST ESD22-A118, 96hours, 130°C, 85%RH Resistance to Solder Heat MIL-STD-750 Method 2031, 260°C, 10s Solderability ANSI/J-STD-002, category 3, Test A Moisture Sensitivity Level Level 1, JEDEC-J-STD-020D Design Considerations Careful selection of the correct component for the application’s operating parameters and environment will go a long way toward extending the operating life of the Thyristor. Good design practice should limit the maximum continuous current through the main terminals to 75% of the component rating. Other ways to ensure long life for a power discrete semiconductor are proper heat sinking and selection of voltage ratings for worst case conditions. Overheating, overvoltage (including dv/dt), and surge currents are the main killers of semiconductors. Correct mounting, soldering, and forming of the leads also help protect against component damage. Dimensions – SOT-23 D Anode Dimensions SEE VIEW C Max Min Typ Max A 0.04 0.04 0.04 0.89 1.02 1.12 A1 0.00 0.00 0.01 0.01 0.10 0.15 b 0.02 0.02 0.02 0.38 0.46 0.51 c 0.00 0.01 0.01 0.08 0.13 0.18 D 0.11 0.11 0.12 2.80 2.90 3.04 E 0.05 0.05 0.06 1.19 1.30 1.40 L1 e 0.07 0.08 0.08 1.78 1.91 2.06 VIEW C L 0.02 0.02 0.02 0.40 0.49 0.60 L1 0.01 0.02 0.03 0.36 0.53 0.74 H 0.08 0.09 0.10 2.10 2.30 2.64 Ɵ 0° - 10° 0° - 10° c b e Cathode 0.25 Gate A L A1 Millimeters Typ HE E Inches Min SOLDERING FOOTPRINT 0.8 0.031 mm inches SCALE 10:1 0.9 0.035 2.0 0.079 0.95 0.037 0.95 0.037 Product Selector Part Number S6X8BBS Voltage 600V X Packing Options Gate Sensitivity Package Part Number Marking Weight Packing Mode Base Quantity 200 μA SOT-23 S6X8BBSRP 6X8 0.01g Tape & Reel 3000 5 © 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 08/03/21 Thyristors Datasheet SxX8BBS Series EV Series 0.8 Amp Sensitive SCRs SOT-23 Reel Pack (RP) Specifications 4mm 4 mm Ø1.5 mm 2 mm 1.75 mm 3.5 mm 8 mm 180 mm 13 mm Abor Hole Diameter 11.6 mm DIRECTION OF FEED Part Numbering System Part Marking System S xX8 B B S xx Series S: SCR Voltage 6: 600V Current X8: 0.8A Packing Type RP: Reel Pack 6X8 YML Sensitivity & Type S: 200µA Sensitive SCR Package Type BB: SOT-23 Date Code Marking Y:Year Code M: Month Code L: Location Code Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at http://www.littelfuse.com/disclaimer-electronics. 6 © 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 08/03/21