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S802CS1RP

S802CS1RP

  • 厂商:

    HAMLIN

  • 封装:

    SMB(DO-214AA)

  • 描述:

    SCR 800 V 1.25 A 灵敏栅极 表面贴装型 Compak

  • 数据手册
  • 价格&库存
S802CS1RP 数据手册
Sx02CSx Thyristor Datasheet Teccor® brand Thyristors Sx02CSx Series 1.25 Amp Sensitive SCRs Product Description The Sx02CSx offers excellent unidirectional switches for phase control applications such as heating and motor speed controls. Sensitive gate SCRs are easily triggered with microAmps of current as furnished by sense coils, proximity switches, and microprocessors. Features • RoHS compliant • Glass-passivated junctions • Voltage capability up to 800 V • Surge capability up to 20 A Agency Approvals and Environmental Environmental Approvals Applications Typical applications are capacitive discharge systems for strobe lights and gas engine ignition. They also include controls for power tools, home/brown goods, and white goods appliances Product Summary Characteristic Value Unit A IT(RMS) 1.25 VDRM / VRRM 800 V IGT 50 to 200 µA Schematic Symbol 1 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2021 Littelfuse, Inc. Revised: 6/2/2021 Sx02CSx Thyristor Datasheet 1. Maximum Ratings ...........................................................................................................................................3 2. Thermal Characteristics ..................................................................................................................................3 3. Electrical Characteristics (TJ = 25 °C unless otherwise specified) .................................................................3 4. Static Characteristics ......................................................................................................................................3 5. Performance Curves .......................................................................................................................................4 6. Soldering Parameters .....................................................................................................................................7 7. Physical Specifications ....................................................................................................................................7 8. Environmental Specifications..........................................................................................................................7 9. Design Considerations ....................................................................................................................................7 10. Package Dimensions ....................................................................................................................................8 11. Part Numbering and Marking ........................................................................................................................8 12. Packing Options ............................................................................................................................................8 13. Packing Specifications ..................................................................................................................................9 2 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2021 Littelfuse, Inc. Revised: 6/2/2021 Sx02CSx Thyristor Datasheet 1. Maximum Ratings Symbol Characteristic Conditions Value Unit V VDSM Non-repetitive Peak Off-state Voltage TJ = 25°C, tp = 1 ms, RGK = 220 1250 VRSM Non-repetitive Peak Reverse Voltage TJ = 25°C, tp = 1 ms, RGK = 220 900 V IT(RMS) RMS On-state Current TC = 75 °C 1.25 A IT(AV) Average On-state Current TC = 75 °C 0.8 A ITSM Peak Non-repetitive Surge Current (Single Half Cycle, TJ,Initial = 25 °C) f = 50 Hz 16 f = 60 Hz 20 I2t I2t Value for Fusing tp = 8.3 ms 1.6 A2s 50 A/µs di/dt Critical Rate of Rise of On-state Current IGM f = 60 Hz TJ = 110 °C A Peak Gate Current TJ = 110 °C 1.0 A PG(AV) Average Gate Power Dissipation TJ = 110 °C 0.1 W TSTG Storage Temperature - -40 to 150 °C Operating Junction Temperature - -40 to 110 °C TJ 2. Thermal Characteristics Symbol Rth(JC) Characteristic Value Unit 1 Thermal Resistance, junction-to-case (AC) 60 °C/W 2 Footnote 1: Mounted on 1 cm copper (two-ounce) foil surface 3. Electrical Characteristics (T J Symbol = 25 °C unless otherwise specified) Description Conditions Min S802CS1 Typ Max Min S802CS2 Typ Max Unit IGT DC Gate Trigger Current VD = 6 V, RL = 10 - - 50 - - 200 µA VGT DC Gate Trigger Voltage VD = 6 V, RL = 10 - - 0.8 - - 0.8 V VGRM Peak Reverse Gate Voltage 5 - - 5 - - V - - 3 - - 5 mA 10 - - 15 - - V/µs - - 50 - - 50 µs - 3 - - 20 - µs 0.25 - - 0.25 - - V IH IRG = 10 µA Holding Current dv/dt IT = 20 mA (initial), RGK Critical Rate-of-rise of Off-stage Voltage VD =VDRM, RGK TJ = 110°C tq Turn-off Time tgt Turn-on Time IG = 2 x IGT, PW = 15 Gate Non-trigger Voltage VD = VDRM, RL VGD IT = 1 A, tp = 50 , dv/dt = 5 , di/dt = 5 , IT = 1.6 A J = 110°C 4. Static Characteristics Symbol VTM IDRM/IRRM Description Peak On-state Voltage Conditions IT = 2.5 A; tp Off-state Current, Peak Repetitive (VDRM = VRRM, RGK = 1 ) 3 Value (Max) 1.70 TJ = 25°C 1 TJ = 100°C 50 TJ = 110°C 500 Unit V µA Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2021 Littelfuse, Inc. Revised: 6/2/2021 Sx02CSx Thyristor Datasheet 5. Performance Curves Figure 2. Normalized DC Gate Trigger Voltage vs. Junction Temperature 4.0 2.0 3.0 1.5 Ratio of VGT / VGT (TJ = 25 °C) Ratio of IGT / IGT (TJ = 25 °C) Figure 1. Normalized DC Gate Trigger Current vs. Junction Temperature 2.0 1.0 0.0 1.0 0.5 0.0 -40 -15 10 35 60 85 110 -40 -15 Junction Temperature, TJ (°C) Figure 3. Normalized DC Holding Current vs. Junction Temperature Instantaneous On-state Current, IT (A) Ratio of IH / IH (TJ = 25 °C) 2.5 2 1.5 1 0.5 0 -15 10 35 60 35 60 85 110 Figure 4. Typical On-state Current vs. On-state Voltage 3 -40 10 Junction Temperature, TJ (°C) 85 110 10 TJ = 25°C 8 6 4 2 0 0.7 Junction Temperature, TJ (°C) 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 Instantaneous On-state Voltage, VT (V) 4 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2021 Littelfuse, Inc. Revised: 6/2/2021 Sx02CSx Thyristor Datasheet Figure 5. Typical Power Dissipation vs. RMS On-state Current Figure 6. Maximum Allowable Case Temperature vs. RMS Onstate Current Max Allowable Case Temperature, TC (°C) Average On-state Power Dissipation, PD (W) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 115 105 95 85 Current Waveform: Sinusoidal Load: Resistive or Inductive Conduction Angle: 180° 75 65 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.2 0.4 0.6 0.8 1 1.2 1.4 RMS On-state Current, IT(RMS) (A) RMS On-state Current, IT(RMS) (A) Figure 7. Maximum Allowable Case Temperature vs. Average Onstate Current Figure 8. Peak Capacitor Discharge Current Peak Discharge Current, ITM (A) Max Allowable Case Temperature, TC (°C) 180 115 105 95 85 Current Waveform: Sinusoidal Load: Resistive or Inductive Conduction Angle: 180° 75 160 140 1 Hz 120 12 Hz 100 60 Hz 80 60 40 20 0 1 65 0 0.2 0.4 0.6 0.8 1 10 100 Pulse Current Duration, tw (µs) Average On-state Current, IT(AVE) (A) Figure 9. Peak Repetitive Sinusoidal Pulse Current Peak Discharge Current, ITM (A) 180 160 140 1 Hz 120 100 12 Hz 80 60 Hz 60 40 20 0 1 10 100 Pulse Current Duration, tw (µs) 5 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2021 Littelfuse, Inc. Revised: 6/2/2021 Sx02CSx Thyristor Datasheet Peak Surge (Non-repetitive) On-state Current, ITSM (A) Figure 10. Surge Peak On-state Current vs. Number of Cycles 100.0 Notes 1. Gate control may be lost during and immediately following surge current interval. 2. Overload may not be repeated until junction temperature has returned to steady-state rated value. 10.0 1.0 Supply Frequency: 60 Hz Sinusoidal Load: Resistive RMS Onstate Current [IT,RMS]: Max rated value at specific case temperature 0.1 1 10 100 1000 Surge Current Duration - Full Cycle Figure 11. Simple Test Circuit for Gate Trigger Voltage and Current Notes V1 VGT IG R1 0 V to 10 V dc meter 0 V to 1 V dc meter 0 mA to 1 mA dc milliammeter 1 k potentiometer To measure gate trigger voltage and current, raise gate voltage (VGT) until meter reading V1 drops from 6 V to 1 V. Gate trigger voltage is the reading on VGT just prior to V1 dropping. Gate trigger current IGT Can be computed from the relationship. IGT = IG- - VGT /1000 A where IG is reading (in amperes) on meter just prior to V1 dropping. 2. IGT may turn out to be a negative quantity (trigger current flows out from gate lead). If negative current occurs, IGT value is not a valid reading. Remove 1 k resistor and use IG as the more correct IGT value. This will occur on 12 µA gate products. 6 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2021 Littelfuse, Inc. Revised: 6/2/2021 Sx02CSx Thyristor Datasheet 6. Soldering Parameters Parameter Value Reflow Condition Pre-Heat Pb-free Assembly Temperature Min, TS(Min) 150 °C Temperature Max, TS(Max) 200 °C Time (Min to Max), ts 60 to 180 s Average Ramp-up Rate Liquidus Temp., TL to peak 5 °C/s (Max) TS(Max) to TL Ramp-up Rate 5 °C/s (Max) Temperature, TL Liquidus Reflow 217 °C Time, tS 60 to 150 s Peak Temperature, TP 260 °C (±5 °C) Time within 5 °C of Actual Peak Temperature, tP 20 to 40 s Ramp-down Rate 5 °C/s (Max) Time 25 °C to Peak Temperature, TP 8 minutes (Max) Do Not Exceed 7. Physical Specifications Device Feature 280 °C 8. Environmental Specifications Detail Terminal Finish 100% Matte Tin-plated/ Pb-free Solder Dipped Body Material UL Recognized epoxy meeting Flammability Rating V-0 Lead Material Copper Alloy Test AC Blocking Temperature Cycling Temperature/Humidity High Temperature Storage Low Temperature Storage Resistance to Solder Heat 9. Design Considerations Careful selection of the correct component for the will go a long way toward extending the operating life of the Thyristor. Good design practice should limit the maximum continuous current through the main terminals to 75% of the component rating. Other ways to ensure long life for a power discrete semiconductor are proper heat sinking and selection of voltage ratings for worst case conditions. Overheating, overvoltage (including dv/dt), and surge currents are the main killers of semiconductors. Correct mounting, soldering, and forming of the leads also help protect against component damage. 7 Specifications and Conditions MIL-STD-750, M-1040, Cond A Applied Peak AC voltage @ 110°C for 1008 hours MIL-STD-750, M-1051, 100 cycles, -40°C to +150°C, 15 min dwell time EIA / JEDEC, JESD22-A101 1008 hours; 320V - DC: 85°C; 85% relative humidity MIL-STD-750, M-1031, 1008 hours, 150°C 1008 hours, -40°C MIL-STD-750 Method 2031 Solderability ANSI/J-STD-002, category 3, Test A Lead Bend MIL-STD-750, M-2036 Cond E Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2021 Littelfuse, Inc. Revised: 6/2/2021 Sx02CSx Thyristor Datasheet 10. Package Dimensions Compak (C Package) Inches Dimension Millimeters Min Max Min Max A 0.130 0.156 3.30 3.95 B 0.201 0.220 5.10 5.60 C 0.077 0.087 1.95 2.20 D 0.159 0.181 4.05 4.60 E 0.030 0.063 0.75 1.60 F 0.075 0.096 1.90 2.45 G 0.002 0.008 0.05 0.20 H 0.077 0.104 1.95 2.65 J 0.043 0.053 1.09 1.35 K 0.006 0.016 0.15 0.41 L 0.030 0.055 0.76 1.40 M 0.022 0.028 0.56 0.71 N 0.027 0.033 0.69 0.84 P 0.052 0.058 1.32 1.47 11. Part Numbering and Marking 12. Packing Options Part Number Marking Gate Sensitivity Weight Packing Mode Base Quantity S802CS1RP S802S1 50 µA 0.08 g Embossed Carrier 2500 S802CS2RP S802S2 200 µA 0.08 g Embossed Carrier 2500 8 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2021 Littelfuse, Inc. Revised: 6/2/2021 Sx02CSx Thyristor Datasheet 13. Packing Specifications Compak Embossed Carrier Reel Pack (RP) Specifications Meets all EIA-481-1 Standards For additional information please visit www.Littelfuse.com/powersemi Disclaimer Notice - Littelfuse products are not designed for, and shall not be used for, any purpose (including, without limitation, automotive, military, aerospace, medical, lifesaving, life-sustaining or nuclear facility applications, devices intended for surgical implant into the body, or any other application in which the failure or lack of desired operation of the product may result in personal injury, death, or property damage) other than those expressly forth in applicable Littelfuse product documentation. Littelfuse shall not be liable for any claims or damages arising out of products used in applications not expressly intended by Littelfuse as set forth in applicable Littelfuse documentation. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics 9 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2021 Littelfuse, Inc. Revised: 6/2/2021
S802CS1RP 价格&库存

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S802CS1RP
  •  国内价格 香港价格
  • 2500+4.576902500+0.56842

库存:2540

S802CS1RP
  •  国内价格 香港价格
  • 1+19.950081+2.47763
  • 10+12.8165210+1.59171
  • 100+8.71666100+1.08254
  • 500+6.96114500+0.86452
  • 1000+6.732341000+0.83610

库存:2540