S802ECSAP

S802xSx Thyristor Datasheet S802xSx Series EV Series 1.5 Amp Sensitive SCRs Product Description The S802xSx offers a high static dv/dt with a low turn off (tq) time. It is specifically designed for GFCI (Ground Fault Circuit Interrupter) and AFCI (Arc Fault Circuit Interrupter), RCD (Residual Current Device) and RCBO (Residual Current Circuit Breaker with Overload Protection) applications. All SCR junctions are glass-passivated to ensure long term reliability and parametric stability. Features Agency Approvals and Environmental • Surge current capability up to 24 A • Blocking voltage (VDRM / VRRM) capability up to 800 V • Non-repetitive direct surge peak off-state voltage (VDSM) up to 1250 V • Non-repetitive reverse surge peak off-state voltage (VRSM) up to 900 V • High dv/dt noise immunity • Improved turn-off time (tq) • Sensitive gate for direct microprocessor interface • Halogen-free and RoHS compliant Environmental Approvals Product Summary Characteristic Value Unit IT(RMS) 1.5 A VDRM / VRRM 800 V VDSM (tp = 50 µs) 1250 V VRSM (tp = 50 µs) 900 V IGT 20 to 100 µA Applications • GFCI • AFCI • RCD • RCBO Schematic Symbol *TO-92 with GAK pin output 1 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2021 Littelfuse, Inc. Revised: 6/10/2021 S802xSx Thyristor Datasheet 1. Maximum Ratings...........................................................................................................................................3 2. Thermal Characteristics ..................................................................................................................................3 3. Electrical Characteristics (TJ = 25 °C, unless otherwise specified) ................................................................3 4. Static Characteristics (TJ = 25 °C, unless otherwise specified) ......................................................................3 5. Performance Curves .......................................................................................................................................4 6. Soldering Parameters .....................................................................................................................................6 7. Physical Specifications....................................................................................................................................6 8. Environmental Specifications..........................................................................................................................6 9. Design Considerations ....................................................................................................................................6 10. Package Dimensions ....................................................................................................................................7 11. Part Numbering and Marking ........................................................................................................................8 12. Product Selector ...........................................................................................................................................8 13. Packing Options ............................................................................................................................................8 14. Packing Specifications ..................................................................................................................................8 2 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2021 Littelfuse, Inc. Revised: 6/10/2021 S802xSx Thyristor Datasheet 1. Maximum Ratings Symbol Characteristic Conditions IT(RMS) RMS On-state Current (Full Sine Wave) IT(AV) Average On-state Current ITSM Non-repetitive Surge Peak On-state Current (Sine Half Wave, TJ,Initial = 25 °C) I2t I2t Value for Fusing di/dt IGM TO-92 TC = 65 °C SOT-223 TC = 80 °C TO-92 TC = 65 °C SOT-223 TC = 80 °C Unit 1.5 A 0.9 A f = 50 Hz 20.0 f = 60 Hz 24.0 f = 50 Hz 2.0 A2s TJ = 125 °C 80 A/µs tp = 20 µs TJ = 125 °C 0.5 A tp = 10 ms Critical Rate of Rise of On-state Current IG =10 mA Peak Gate Current Value A PG(AV) Average Gate Power Dissipation - TJ = 125 °C 0.2 W TSTG Storage Junction Temperature Range - - -40 to 150 °C Operating Junction Temperature Range - - -40 to 125 °C Value Unit TJ 2. Thermal Characteristics Symbol Characteristic Rth(JC) Thermal Resistance, junction-to-case (AC) IT = 1.5 ARMS1 Rth(JA) Thermal Resistance, junction-to-ambient (AC) IT = 1.5 ARMS1 TO-92 35 SOT-223 25 TO-92 150 SOT-223 60 °C/W °C/W Footnote 1: 60 Hz AC resistive load condition, 100% conduction 3. Electrical Characteristics (T J Symbol = 25 °C, unless otherwise specified) Description Conditions Value Typ Min Max Unit IGT DC Gate Trigger Current VD = 6 V, RL = 10 20 60 100 µA VGT DC Gate Trigger Voltage VD = 6 V, RL = 10 - - 0.8 V 8 - - V - - 3 mA VGRM IH dv/dt VGD Peak Reverse Gate Voltage IRG = 10 µA Holding Current RGK Critical Rate-of-rise of Off-stage Voltage Gate Non-trigger Voltage tq Turn-off Time tgt Turn-on Time RGK TJ = 125 °C, VD = 67% of VDRM, Exponential waveform VD = ½ VDRM, RGK = 1 J 40 - - RGK 250 - - = 125 °C 0.2 - - V - - 35 µs - 2.3 - µs IT = 0.5 A IG = 10 mA, PW 4. Static Characteristics (T J Symbol , Initial current = 20 mA T = 1.6 APK V/µs = 25 °C, unless otherwise specified) Description Conditions Maximum Value Unit VTM Peak On-state Voltage 1.5 A device, ITM = 4 A, tp = 380 µs 1.8 V VTO Threshold Voltage - 1.03 V RD Dynamic Resistance - 106 IDRM/IRRM Off-state Current, Peak Repetitive 3 TJ = 25 °C 3 TJ = 125 °C 500 µA Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2021 Littelfuse, Inc. Revised: 6/10/2021 S802xSx Thyristor Datasheet 5. Performance Curves Figure 1. Normalized DC Gate Trigger Current for All Quadrants vs. Junction Temperature Figure 2. Normalized DC Holding Current vs. Junction Temperature 1.5 1.5 Ratio of IH/IH (TJ = 25 °C) 2 Ration of IGT/IGT (TJ = 25 °C) 2 1 0.5 1 0.5 0 0 -40 -25 -10 5 20 35 50 65 80 95 110 125 -40 -25 -10 Junction Temperature, TJ (°C) Figure 3. Normalized DC Gate Trigger Voltage vs. Junction Temperature Instantaneous On-state Current, IT (A) Ratio of VGT/VGT (TJ = 25 °C) 1.2 1 0.8 0.6 0.4 0.2 0 5 20 35 50 65 80 20 35 50 65 80 95 110 125 Figure 4. Typical On-state Current vs. On-state Voltage 1.4 -40 -25 -10 5 Junction Temperature, TJ (°C) 95 110 125 9 8 7 6 5 4 3 2 1 0 0.5 Junction Temperature, TJ (°C) 0.8 1.1 1.4 1.7 2 Instantaneous On-state Voltage, VT (V) 4 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2021 Littelfuse, Inc. Revised: 6/10/2021 S802xSx Thyristor Datasheet Figure 6. Maximum Allowable Case Temperature vs. On-state Current 3 Max Allowable Case Temperature, TC (°C) Average On-state Power Dissipation, PD(AV) (W) Figure 5. Typical Power Dissipation vs. RMS On-state Current 2.5 2 1.5 1 0.5 0 0 0.3 0.6 0.9 1.2 1.5 130 Trendline Error 120 110 Current Waveform: Sinusoidal Load: Resistive or Inductive Conduction Angle: 180° Case Temperature: Measured as shown on dimensional drawings 100 90 0 RMS On-state Current, IT(RMS) (A) 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 RMS On-state Current, IT(RMS) (A) Peak Surge (Non-repetitive) On-state Current, ITSM (A) Figure 7. Surge Peak On-state Current vs. Number of Cycles 100 Notes Supply Frequency: 60 Hz Sinusoidal Load: Resistive RMS Onstate Current [IT,RMS]: Max rated value at specific case temperature 1. Gate control may be lost during and immediately following surge current interval. 2. Overload may not be repeated until junction temperature has returned to steady-state rated value. 10 1 1 10 100 1000 Surge Current Duration - Full Cycle 5 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2021 Littelfuse, Inc. Revised: 6/10/2021 S802xSx Thyristor Datasheet 6. Soldering Parameters Parameter Value Reflow Condition Pre-Heat Pb-free Assembly Temperature Min, TS(Min) 150 °C Temperature Max, TS(Max) 200 °C Time (Min to Max), ts 3 °C/s (Max) TS(Max) to TL Ramp-up Rate 3 °C/s (Max) Temperature, TL Liquidus Reflow Time (min to max), tS Peak Temperature, TP Ramp-down Rate 30* s 6 °C/s (Max) Time 25 °C to Peak Temperature, TP Do Not Exceed Device Feature 217 °C 60 to 150 s 260 °C (+0/ -5 °C) Time within 5 °C of Actual Peak Temperature, tP 7. Physical Specifications 60 to 120 s Average Ramp-up Rate Liquidus Temp., TL to peak 8 minutes (Max) 260 °C 8. Environmental Specifications Detail Test Terminal Finish 100% Matte Tin-plated AC Blocking Body Material UL Recognized Compound meeting Flammability Rating V-0 Temperature Cycling Lead Material Copper Alloy Temperature/Humidity 9. Design Considerations Careful selection of the correct component for the will go a long way toward extending the operating life of the Thyristor. Good design practice should limit the maximum continuous current through the main terminals to 75% of the component rating. Other ways to ensure long life for a power discrete semiconductor are proper heat sinking and selection of voltage ratings for worst case conditions. Overheating, overvoltage (including dv/dt), and surge currents are the main killers of semiconductors. Correct mounting, soldering, and forming of the leads also help protect against component damage. 6 Specifications and Conditions MIL-STD-750, M-1040, Cond A Applied Peak AC voltage @ 125°C for 1008 hours MIL-STD-750, M-1051, 1000 cycles; -55°C to +150°C; 15 min dwell time EIA / JEDEC, JESD22-A101 1008 hours; 320V - DC: 85°C; 85% relative humidity UHAST JESD22-A118, 96 hours, 130°C, 85%RH High-Temp Storage MIL-STD-750, M-1031, 1008 hours; 150°C Low-Temp Storage 1008 hours; -40°C Resistance to Solder Heat MIL-STD-750 Method 2031 Solderability ANSI/J-STD-002, category 3, Test A Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2021 Littelfuse, Inc. Revised: 6/10/2021 S802xSx Thyristor Datasheet 10. Package Dimensions TO-92 Dimension Millimeters Inches Min Max Min Max 4.450 5.200 0.175 0.205 B 4.320 5.330 0.170 0.210 C 12.700 - 0.500 - D 3.430 - 0.135 - E 3.180 4.190 0.125 0.165 F 2.040 2.660 0.080 0.105 G 0.407 0.533 0.016 0.021 H 1.150 1.390 0.045 0.055 I 2.420 2.660 0.095 0.105 J 0.380 0.500 0.015 0.020 A SOT-223 Dimension *Dimensions in millimeters (inches) Millimeters Inches Min Typ Max Min Typ Max A 6.30 6.50 6.70 0.248 0.256 0.264 B 3.30 3.50 3.70 0.130 0.138 0.146 C - - 1.80 - - 0.071 D 0.02 - 0.10 0.001 - 0.004 E 2.90 3.00 3.15 0.114 0.118 0.124 F 0.60 0.70 0.85 0.024 0.027 0.034 G - 2.30 - - 0.090 - H - 4.60 - - 0.181 - I 6.70 7.00 7.30 0.264 0.276 0.287 J 0.24 0.26 0.35 0.009 0.010 0.014 K 7 10° MAX Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2021 Littelfuse, Inc. Revised: 6/10/2021 S802xSx Thyristor Datasheet 11. Part Numbering and Marking 12. Product Selector Voltage Part Number 800 V Gate Sensitivity Package S802ECS X 100 µA TO-92 S802TS X 100 µA SOT-223 13. Packing Options Part Number Marking Weight Packing Mode Base Quantity S802ECS S802ECS 0.217 g Bulk 2500 S802ECSRP S802ECS 0.217 g Tape & Reel 2000 S802ECSAP S802ECS 0.217 g Ammo Pack 2000 S802TSRP S802TS 0.120 g Tape & Reel 1000 14. Packing Specifications TO-92 (3-lead) Reel Pack (RP) Radial Leaded Specifications Meets all EIA-468-C Standards 8 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2021 Littelfuse, Inc. Revised: 6/10/2021 S802xSx Thyristor Datasheet TO-92 (3-lead) Ammo Pack (AP) Radial Leaded Specifications Meets all EIA-468-C Standards SOT-223 Reel Pack (RP) Specifications For additional information please visit www.Littelfuse.com/powersemi Disclaimer Notice - Littelfuse products are not designed for, and shall not be used for, any purpose (including, without limitation, automotive, military, aerospace, medical, lifesaving, life-sustaining or nuclear facility applications, devices intended for surgical implant into the body, or any other application in which the failure or lack of desired operation of the product may result in personal injury, death, or property damage) other than those expressly forth in applicable Littelfuse product documentation. Littelfuse shall not be liable for any claims or damages arising out of products used in applications not expressly intended by Littelfuse as set forth in applicable Littelfuse documentation. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics 9 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2021 Littelfuse, Inc. Revised: 6/10/2021