S8X5ECSRP

Thyristors EV Series 0.8 Amp Sensitive SCRs S8X5ECSx RoHS Description The S8X5ECSx offers a high static dv/dt with a low turn off (tq) time. It is specifically designed for GFCI (Ground Fault Circuit Interrupter) and AFCI (Arc Fault Circuit Interrupter), RCD (Residual Current Device) and RCBO (Residual Current Circuit Breaker with Overload Protection) applications. All SCR junctions are glass-passivated to ensure long term reliability and parametric stability. Features Main Features Symbol Value Unit IT(RMS) 0.5 A VDRM / VRRM 800 V VDSM (tp = 50 μs) 1250 V VRSM (tp = 50 μs) 900 V IGT 20 to 100 μA • Non-repetitive reverse surge peak off-state voltage (VRSM) up to 900V • Thru-hole packages • Surge current capability < 20Amps • High dv/dt noise immunity • Blocking voltage ( VDRM / VRRM ) capability - up to 800V • Improved turn-off time (tq) • Non-repetitive direct surge peak off-state voltage (VDSM) up to 1250V •S  ensitive gate for direct microprocessor interface •H  alogen free and RoHS compliant Schematic Symbol A G K * TO92 with "GAK" pin output Absolute Maximum Ratings Symbol Value Unit IT(RMS) RMS on-state current (full sine wave) TC = 85°C 0.5 A IT(AV) Average on-state current TC = 85°C 0.3 A ITSM Non repetitive surge peak on-state current (Sine half wave, TJ initial = 25°C) F= 50Hz 10 A F= 60Hz 12 A I2t I2t Value for fusing tp = 10 ms F = 50 Hz 0.5 A 2s TJ = 125°C 80 A/µs tp = 20 μs TJ = 125°C 0.5 A Average gate power dissipation — TJ = 125°C 0.2 W Tstg Storage junction temperature range — — -40 to 150 °C TJ Operating junction temperature range — — -40 to 125 °C di/dt IGM PG(AV) Parameter Critical rate of rise of on-state current IG = 10mA Peak Gate Current © 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: BO.12/08/20 Thyristors EV 0.5 Series Amp Sensitive EV Series Amp0.8 Sensitive SCRs SCRs Electrical Characteristics (TJ = 25°C, unless otherwise specified) Value Symbol Description Test Conditions Limit IGT DC Gate Trigger Current VD = 6V RL = 100 Ω Min. Max. VGT DC Gate Trigger Voltage VD = 6V RL = 100 Ω Max. 0.8 V VGRM Peak Reverse Gate Voltage IRG = 10μA Min. 8 V IH Holding Current RGK = 1 KΩ Initial Current = 20mA Max. 3 mA dv/dt Critical Rate-of-Rise of Off-State Voltage TJ = 125°C VD = 67% of VDRM Exp. Waveform RGK =1 kΩ Min. 40 V/μs VGD Gate Non-Trigger Voltage VD = 1/2 VDRM RGK =1 kΩ TJ = 125°C Min. 0.2 V tq Turn-Off Time IT = 0.5A Max. 35 μs Turn-On Time IG=10mA PW = 15μsec IT = 1.6A(pk) Typ. 2.3 μs tgt S8X5ECS 20 100 S8X5ECS2 20 50 Unit μA μA Static Characteristics (TJ = 25°C, unless otherwise specified) Symbol Description Test Conditions Limit Value Unit VTM Peak On-State Voltage 0.5A device ITM = 4A tp = 380 μs MAX. 1.8 V VT0 Threshold Voltage - MAX 1.03 V RD Dynamic Resistance - MAX 106 mΩ IDRM / IRRM Off-State Current, Peak Repetitive TJ = 25°C MAX. 3 μA TJ = 125°C MAX. 500 μA Thermal Resistances Symbol Description Test Conditions Value Unit Rth(JC) Junction to case (AC) IT = 0.8A (RMS)1 35 °C/ W Rth(j-a) Junction to ambient IT = 0.8A (RMS)1 150 °C/ W 1. 60Hz AC resistive load condition, 100% conduction. © 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: BO.12/08/20 Thyristors EV 0.5 Series Amp Sensitive EV Series Amp0.8 Sensitive SCRs SCRs Figure 1: Normalized DC Gate Trigger Current For All Quadrants vs. Junction Temperature Figure 2: N  ormalized DC Holding Current vs. Junction Temperature 2.0 Ratio of IH / IH (TJ = 25 ij) Ratio of IGT / IGT (TJ = 25 ij) 2.0 1.5 1.0 0.5 0.0 -40 -25 -10 5 20 35 50 65 80 95 110 1.5 1.0 0.5 0.0 125 -40 -25 -10 Junction Temperature (TJ) -- ( ij) 50 65 80 95 110 125 6 Intantaneous On-state Current (I T) – Amps Ratio of VGT / VGT (TJ = 25 ij) 35 Figure 4: O  n-State Current vs. On-State Voltage (Typical) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -40 -25 -10 5 20 35 50 65 80 95 110 125 5 4 3 2 1 0 0.5 0.8 0.4 0.3 0.2 0.1 0.1 0.2 0.3 0.4 RMS On-state Current [I T(RMS)] - (Amps) 0.5 Maximum Allowable Case Temperature (TC) - oC 0.5 0 1.4 1.7 2.0 Figure 6: M  aximum Allowable Case Temperature vs. On-State Current Figure 5: Power Dissipation (Typical) vs. RMS On-State Current 0 1.1 Instantaneous On-state Voltage (VT ) – Volts Junction Temperature (TJ) -- ( ij) Average On-State Power Dissipation [PD(AV)] - (Watts) 20 Junction Temperature (TJ) -- ( ij) Figure 3: Normalized DC Gate Trigger Voltage vs. Junction Temperature 0.0 5 130 CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180o CASE TEMPERATURE: Measured as shown on dimensional drawings 120 110 100 90 0.0 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 RMS On-state Current [IT(RMS)] - Amps © 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: BO.12/08/20 Thyristors EV 0.5 Series Amp Sensitive EV Series Amp0.8 Sensitive SCRs SCRs Figure 7: Surge Peak On-State Current vs. Number of Cycles Peak Surge (Non-repetitive) On-State Current (IT S M) – Amps . 20 Supply Frequency: 60Hz Sinusoidal Load: Resistive RMS On-State Current [IT(RMS)]: Max Rated Value at Specific Case Temperature 10 Notes: 1. Gate control may be lost during and immediately following surge current interval. 2. Overload may not be repeated until junction temperature has returned to steady-state rated value. 0 1 10 100 1000 Surge Current Duration - Full Cycle Soldering Parameters Pre Heat - Temperature Min (Ts(min)) 150°C - Temperature Max (Ts(max)) 200°C - Time (min to max) (ts) 60 – 180 secs Average ramp up rate (Liquidus Temp) (TL) to peak TS(max) to TL - Ramp-up Rate Reflow Pb – Free assembly 5°C/second max 5°C/second max - Temperature (TL) (Liquidus) 217°C - Time (min to max) (ts) 60 – 150 seconds Peak Temperature (TP) 260+0/-5 °C Time within 5°C of actual peak Temperature (tp) 20 – 40 seconds Ramp-down Rate 5°C/second max Time 25°C to peak Temperature (TP) 8 minutes Max. Do not exceed 280°C tP TP Ramp-up Temperature Reflow Condition TL tL T S(max) Preheat T S(min) Ramp-dow Ramp-down tS 25 time to peak temperature Time © 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: BO.12/08/20 Thyristors EV 0.5 Series Amp Sensitive EV Series Amp0.8 Sensitive SCRs SCRs Physical Specifications Reliability/Environmental Tests 100% Matte Tin-plated. UL Recognized compound meeting flammability rating V-0. Copper Alloy Terminal Finish Body Material Lead Material Test UHAST Specifications and Conditions MIL-STD-750, M-1040, Cond A Applied Peak AC voltage @ 125°C for 1008 hours MIL-STD-750, M-1051, 1000 cycles; -55°C to +150°C; 15-min dwell-time EIA / JEDEC, JESD22-A101 1008 hours; 320V - DC: 85°C; 85% rel humidity JESD22-A118, 96 hours, 130°C, 85%RH High Temp Storage MIL-STD-750, M-1031,1008 hours; 150°C Low-Temp Storage Resistance to Solder Heat Solderability 1008 hours; -40°C Lead Bend MIL-STD-750, M-2036 Cond E AC Blocking Temperature Cycling Temperature/Humidity Design Considerations Careful selection of the correct component for the application’s operating parameters and environment will go a long way toward extending the operating life of the Thyristor. Good design practice should limit the maximum continuous current through the main terminals to 75% of the component rating. Other ways to ensure long life for a power discrete semiconductor are proper heat sinking and selection of voltage ratings for worst case conditions. Overheating, overvoltage (including dv/dt), and surge currents are the main killers of semiconductors. Correct mounting, soldering, and forming of the leads also help protect against component damage. MIL-STD-750 Method 2031 ANSI/J-STD-002, category 3, Test A Dimensions – TO-92 A TC Measuring Point Dimension A B Seating Plane C Anode Inches Millimeters Min Max Min Max 0.175 0.205 4.450 5.200 0.210 4.320 5.330 B 0.170 C 0.500 D 0.135 E 0.125 0.165 3.180 4.190 F 0.080 0.105 2.040 2.660 G 0.016 0.021 0.407 0.533 H 0.045 0.055 1.150 1.390 I 0.095 0.105 2.420 2.660 J 0.015 0.020 0.380 0.500 12.70 3.430 Cathode G H Gate I D F J E F Packing Option Part Number Marking Weight Packing Mode S8X5ECS S8X5ECS 0.217G Bulk Base Quantity 2500 S8X5ECSRP S8X5ECS 0.217G Tape & Reel 2000 2000 S8X5ECSAP S8X5ECS 0.217G Ammo Pack S8X5ECS2 S8X5ECS2 0.217G Bulk 2500 S8X5ECS2RP S8X5ECS2 0.217G Tape & Reel 2000 S8X5ECS2AP S8X5ECS2 0.217G Ammo Pack 2000 © 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: BO.12/08/20 Thyristors EV Series Amp Sensitive EV Series 0.5 Amp0.8Sensitive SCRs SCRs TO-92 (3-lead) Reel Pack (RP) Radial Leaded Specifications 0.02 (0.5 ) 0.236 (6.0) 1.6 (41.0) 0.708 (18.0) 0.098 (2.5) MAX 1.2 6 (32.0) 0.354 (9.0) 0. 5 (12.7) Gate Cathode 0.2 (5.08) Anode 0.1 (2.54) 0.157 DI A (4.0) 14.17(360.0) Flat up 1.9 7 (50.0) Meets all EIA-468-C Standards Dimensions are in inches (and millimeters). Direction of Feed TO-92 (3-lead) Ammo Pack (AP) Radial Leaded Specifications 0.236 (6.0 ) 0.02 (0.5 ) 0.098 (2.5) MAX 1.27 (32.2) 1.62 (41.2) 0.708 (18.0) 0.35 4 (9.0 ) 0.1 (2.54) 0. 5 (12.7) Cathode 0.2 (5.08) 0.157 (4.0 ) DI A Gate Anode Flat down n of Feed Direc tio 25 Devices per fold Meets all EIA-468-C Standards 1.85 (47.0) 12. 2 (310.0 ) 1.85 (47.0) Dimensions are in inche s (and millimeters). 13. 3 (338.0) Part Numbering System Part Marking System S 8X5 E C S xx Series S: SCR Voltage 8: 800V Current X5: 0.5A SOT89 Package Type Blank: Bulk Pack RP: Reel Pack AP: Ammo Pack Sesitivity & Type S: 100µA Sensitive SCR S2: 50µA Sensitive SCR Package Type EC: TO-92 Center Anode SOT223 Line1 = Littelfuse Part Number Line2 = continuation…Littelfuse Part Number Y = Last Digit of Calendar Year M = Letter Month Code (A-L for Jan-Dec) L = Location Code DD = Calendar Date TO-92 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at http://www.littelfuse.com/disclaimer-electronics. © 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: BO.12/08/20