SESD1004Q4UG-0030-088

TVS Diode Array (SPA® Diodes) SESD Series Enhanced ESD Discrete TVS SESD Series Enhanced ESD Diode Arrays RoHS Pb GREEN ELV Description The SESD Series Enhanced ESD Diode Arrays provides higher order ESD protection in signal-integrity-preserving unidirectional arrays for the world’s most challenging high speed serial interfaces. Compelling packaging options include the standard 2.5mmx1.0mm and the SOD-883. Standard packages minimize trace layout complexity, save significant PCB space, and improve reusability of the footprints. The nominal capacitance makes the devices applicable to the worlds’ fastest consumer serial interfaces. Features Pinout 1004 DFN array 1 2 10 3.G 9 4 8.G 7 5 • ELV Compliant • ESD, IEC61000-4-2, • RoHS Compliant and Lead Free ±22kV contact, ±22kV air 6 0402 DFN array 1 • 0.30pF TYP capacitance 2 • Low clamping voltage of 13V @ IPP=2.2A (tP=8/20μs) • Moisture Sensitivity Level (MSL Level-1) • Low profile 1004 and 0402 DFN array packages • PPAP capable • AEC-Q101 qualified • Facilitates the preservation of signal integrity 3 Bottom View Functional Block Diagram 1 2 4 Applications 5 1 2 • Ultra-high speed data lines • USB 3.1, 3.0, 2.0 • HDMI 2.0, 1.4a, 1.3 ® • Thunderbolt G, 3, 8 3 1004 DFN array 1 2 • Tablet PC and external storage with high speed interfaces • Applications requiring high ESD performance in small packages • DisplayPort(TM) • V-by-One portable electronics • Consumer, mobile and 0402 DFN array 3 4 5 6 Additional Information G Datasheet Resources Samples © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/22/19 TVS Diode Array (SPA® Diodes) SESD Series Enhanced ESD Discrete TVS Absolute Maximum Ratings Symbol Parameter Value Units IPP Peak Current (tp=8/20μs) 2.2 A TOP Operating Temperature -55 to 125 °C TSTOR Storage Temperature -55 to 150 °C CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. 1004 DFN Array Electrical Characteristics - (TOP=25°C) Parameter Symbol Test Conditions Min Input Capacitance CI/O-GND Reverse Bias=0V, f=3GHz 0.30 pF Breakdown Voltage VBR IR=1mA 8.80 V 25 nA 13.0 V Reverse Working Voltage VRWM Reverse Leakage Current ILEAK VR=5V, Any I/O to GND VC IPP=2.2A, tp=8/20us, Fwd Clamping Voltage Typ 7.0 IEC 61000-4-2 (Contact) ±22 IEC 61000-4-2 (Air) ±22 Symbol Test Conditions Min Input Capacitance CI/O-GND Reverse Bias=0V, f=3 GHz 0.30 Breakdown Voltage VBR IR=1mA 8.80 ESD Withstand Voltage Max VESD Units V kV 0402 DFN Array Electrical Characteristics - (TOP=25°C) Parameter Typ Max Units pF V Reverse Working Voltage VRWM Reverse Leakage Current ILEAK VR=5V, Any I/O to GND 25 nA VC IPP=2.2A, tp=8/20us, Fwd 13.0 V Clamping Voltage ESD Withstand Voltage 7.0 VESD IEC61000-4-2 (Contact) ±22 IEC61000-4-2 (Air) ±22 0 0 -5.0 -5.0 -10.0 -15.0 -20.0 -25.0 -30.0 1.E+06 kV Insertion Loss Diagram - SESD0402Q2UG-0030-088 S21 Insertion Loss (dB) S21 Insertion Loss (dB) Insertion Loss Diagram - SESD 1004Q4UG-030-088 V -10.0 -15.0 -20.0 -25.0 -30.0 1.E+07 1.E+08 Frequency (Hz) 1.E+09 1.E+10 1.E+06 1.E+07 1.E+08 1.E+09 1.E+10 Frequency (Hz) © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/22/19 TVS Diode Array (SPA® Diodes) SESD Series Enhanced ESD Discrete TVS Device IV Curve 1.0 0.8 0.6 0.4 Current (mA) 0.2 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -2 -1 0 1 2 3 4 5 6 7 8 9 10 Voltage (V) USB3.0 Eye Diagram 5.0 Gb/s, 1000mV differential, CPO Compliant Test Pattern Without SESD Device With SESD Device Soldering Parameters Pre Heat Pb – Free assembly - Temperature Min (Ts(min)) 150°C - Temperature Max (Ts(max)) 200°C - Time (min to max) (ts) 60 – 180 secs Average ramp up rate (Liquidus) Temp (TL) to peak 3°C/second max TS(max) to TL - Ramp-up Rate Reflow 3°C/second max - Temperature (TL) (Liquidus) 217°C - Temperature (tL) 60 – 150 seconds Peak Temperature (TP) 260+0/-5 °C Time within 5°C of actual peak Temperature (tp) 20 – 40 seconds Ramp-down Rate 6°C/second max Time 25°C to peak Temperature (TP) 8 minutes Max. Do not exceed 260°C tP TP Critical Zone TL to TP Ramp-up Temperature Reflow Condition TL T S(max) tL Ramp-dow Ramp-down Preheat T S(min) tS 25 time to peak temperature Time Product Characteristics of 0402 DFN Package Lead Plating Pre-Plated Frame Lead Material Copper Alloy Substrate material Silicon UL Recognized compound meeting flammability rating V-0. Body Material © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/22/19 TVS Diode Array (SPA® Diodes) SESD Series Enhanced ESD Discrete TVS Package Dimensions — 1004 DFN Array Millimeters Symbol A1 D Lx N 5 6 8xb Typ Max Min Typ Max A 0.33 0.38 0.43 0.013 0.015 0.017 A1 0.00 0.02 0.05 0 -- 0.002 0.127 ref. 4 7 A3 L1 2x Gn d 8 b1 2x 9 2 e1 R1 Gn d 3 E 2xR N=10 1 e A3 A SIDE VIEW 1 TOP VIEW END VIEW 1 SIDE VIEW 2 (Front) BOTTOM VIEW END VIEW 2 2x F A 2x F A 2x F1 2x F1 2x D1 B G14x G B D1 G1 4x G 8x D 4x G Inches Min 0.005 ref. D 0.90 1.00 1.10 0.035 0.039 0.043 E 2.40 2.50 2.60 0.094 0.098 0.102 b 0.15 0.20 0.25 0.006 0.008 0.010 b1 0.35 0.40 0.45 0.014 0.016 0.018 L 0.33 0.38 0.43 0.013 0.015 0.017 L1 0.00 0.10 0.15 0.000 0.004 0.006 e 0.50 BSC e1 0.50 BSC 0.020 BSC 0.020 BSC R 0.08 BSC 0.003 BSC R1 0.13 BSC 0.005 BSC N 10 10 Symbol Millimeters Inches A 1.20 0.047 B 2.20 0.087 C 0.50 0.020 D 0.20 0.008 D1 0.40 0.016 E 0.20 0.008 F 0.30 0.012 F1 0.20 0.008 G 0.50 BSC 0.020 BSC G1 1.00 BSC 0.039 BSC 8x D E E 8x C 8x C Recommended Alternate Pad Layout © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/22/19 TVS Diode Array (SPA® Diodes) SESD Series Enhanced ESD Discrete TVS Package Dimensions — 0402 DFN Array Millimeters Symbol Inches Min Typ Max Min Typ Max A 0.33 0.38 0.43 0.013 0.015 0.017 A1 0 - 0.05 0 - 0.002 0.13 ref. A3 0.005 ref. D 0.55 0.60 0.65 0.022 0.024 0.026 E 0.95 1.00 1.05 0.037 0.039 0.041 K 0.35 0.40 0.45 0.014 0.016 0.018 L1 0.45 0.50 0.55 0.018 0.020 0.022 L2 0.20 0.25 0.30 0.008 0.010 0.012 b 0.14 0.19 0.24 0.006 0.007 0.009 e1 0.35 BSC 0.014 BSC e2 0.65 BSC 0.026 BSC Symbol Millimeters Inches A 0.60 0.024 B 1.00 0.039 C 0.23 0.009 0.014 D 0.35 D1 0.35 0.014 E 0.15 0.006 F 0.30 0.012 Pad Layout Part Numbering System Part Marking System SESD xxxx Q x U G 0030 – 088 Breakdown Voltage 088: 8.8V (TYP) SESD product Package 0402 1004 D D Input Capacitance 0030: 0.30pF (TYP) DFN Array Package Common GND pin No of channel 2: Two Channels 4: Four Channels Directional U: Unidirectional 0402 4D 4D 1004 Ordering Information Part Number Package Ordering Part Number Minimum Order Quantity SESD0402Q2UG-0030-088 0402 DFN Array RF3925-000 50,000 SESD1004Q4UG-0030-088 1004 DFN Array RF3923-000 25,000 © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/22/19 TVS Diode Array (SPA® Diodes) SESD Series Enhanced ESD Discrete TVS Embossed Carrier Tape & Reel Specification — 1004 DFN Array D0 T Y P2 P0 E1 D1 F B0 W K0 A0 Section Y - Y P1 Y Symbol Millimeters A0 1.20 ± 0.05 B0 2.70 ± 0.05 D0 ø 1.50 + 0.10/-0 D1 ø 0.50 min E1 1.75 ± 0.10 F 3.50 ± 0.05 K0 0.51 ± 0.05 P0 4.00 ± 0.10 P1 4.00 ± 0.10 P2 2.00 ± 0.05 W 8.00 +0.03 / -0.10 T 0.25 ± 0.05 Embossed Carrier Tape & Reel Specification — 0402 DFN Array D0 T Y P0 P2 E1 D1 F B0 W K0 Section Y - Y A0 Y P1 Symbol Millimeters A0 0.70+/-0.05 B0 1.15+/-0.05 D0 ø 1.55+ 0.05 D1 ø 0.40+/- 0.05 E1 1.75+/-0.10 F 3.50+/-0.05 K0 0.47+/-0.05 P0 4.00+/-0.10 P1 2.00+/-0.10 P2 2.00+/-0.05 W 8.00+/-0.10 T 0.20+/-0.05 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at http://www.littelfuse.com/disclaimer-electronics. © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/22/19