Thyristors
4 Amp High Temperature Sensitive SCRs
SJxx04xSx Series
RoHS
Description
This SJxx04x high temperature SCR series is ideal for
uni-directional switch applications such as phase control
in heating, motor speed controls, converters/rectifiers and
capacitive discharge ignitions
These SCRs have a low gate current trigger level of 20μA
maximum at approximately 1.5V.
Features & Benefits
Main Features
Symbol
IT(RMS)
VDRM /VRRM
IGT
Value
Unit
4
A
400 or 600
V
0.2
mA
Schematic Symbol
A
• Voltage capability up
to 600V
• 150°C maximum junction
temperature
• Surge capability up
to 100A at 60Hz half cycle
• Halogen free and RoHS
compliant
Applications
Typical applications includes capacitive discharge system
for motorcycle engine CDI, portable generator engine
ignition, strobe lights and nailers, as well as generic
rectifiers, battery voltage regulators and converters. Also
controls for power tools, home/brown goods and white
goods appliances.
K
G
Absolute Maximum Ratings — Sensitive SCRs
Parameter
Test Conditions
Value
Unit
IT(RMS)
Symbol
RMS on-state current
TC = 130°C
4
A
IT(AV)
Average on-state current
A
ITSM
Peak non-repetitive surge current
I2t
I2t Value for fusing
di/dt
IGM
PG(AV)
Tstg
TJ
VDSM/VRSM
SJxx04xSx Series
TC = 130°C
2.56
single half cycle; f = 50 Hz;
TJ (initial) = 25°C
25
single half cycle; f = 60 Hz;
TJ (initial) = 25°C
30
tp = 8.3 ms
3.7
A2s
A/μs
A
Critical rate of rise of on-state current
f = 60 Hz, TJ = 150 °C
50
Peak gate current
Pw=20 μs, TJ = 150 °C
0.5
A
Average gate power dissipation
TJ = 150 °C
0.1
W
Storage temperature range
-40 to 150
°C
Operating junction temperature range
-40 to 150
°C
VDRM/VRRM+100
V
Peak non-repetitive blocking voltage
Pw=100 μs
©2017 Littelfuse, Inc
Specifications are subject to change without notice.
Revised: 08/02/17
Thyristors
4 Amp High Temperature Sensitive SCRs
Electrical Characteristics (TJ = 25°C, unless otherwise specified) – Sensitive SCRs
Symbol
Test Conditions
IGT
Value
Unit
MIN.
20
μA
MAX.
200
μA
MAX.
0.8
V
VD = VDRM; RGK = 220Ω ; TJ = 125°C
MIN.
45
V/μs
VD = VDRM; RL = 3.3 kΩ; TJ = 125°C
MIN.
0.2
V
V
VD = 6V RL = 100 Ω
VGT
dv/dt
VGD
VD = VDRM; RL = 3.3 kΩ; TJ = 150°C
MIN.
0.1
VGRM
IGR = 10μA
MIN.
6
V
IH
IT = 20mA (initial)
MAX.
6
mA
MAX.
60
μs
TYP.
3
μs
tq
tp=50µs; dv/dt=5V/µs; di/dt=-30A/µs
tgt
IG = 2 x IGT; PW = 15µs; IT = 8A
Static Characteristics
Symbol
Test Conditions
IT = 8A; tp = 380 µs
VTM
IDRM / IRRM
@ VDRM / VRRM
MAX.
TJ = 25°C
400 - 600V
TJ = 125°C, RGK = 220Ω
400 - 600V
TJ = 150°C, RGK = 220Ω
400 - 600V
Value
Unit
1.6
V
5
MAX.
μA
1000
3000
Thermal Resistances
Symbol
Rθ(J-C)
Parameter
Value
Unit
Junction to case (AC)
1.5
°C/W
Figure 1: Normalized DC Gate Trigger Current
vs. Junction Temperature (Sensitive SCR)
Figure 2: N
ormalized DC Gate Trigger Voltage
vs. Junction Temperature
1.4
1.6
RGK=1K
1.4
Ratio of VGT / VGT (TJ = 25°C)
Ratio of IGT / IGT (TJ = 25°C)
1.8
1.2
1
RGK=220Ω
0.8
0.6
0.4
1
0.8
0.6
0.4
0.2
0.2
0
1.2
-40
-15
10
35
60
85
110
Junction Temperature (TJ) -- (°C)
SJxx04xSx Series
135 150
0
-40
-15
10
35
60
85
110
135 15
Junction Temperature (TJ) -- (°C)
©2017 Littelfuse, Inc
Specifications are subject to change without notice.
Revised: 08/02/17
Thyristors
4 Amp High Temperature Sensitive SCRs
Figure 4: O
n-State Current vs. On-State
Voltage (Typical)
Figure 3: Normalized DC Holding Current
vs. Junction Temperature
Intantaneous On-state Current (IT) – Amps
1.6
Ratio of IH / IH (TJ = 25°C)
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-40
-15
10
35
60
85
110
15
12
9
6
3
0
135 15
0.7 0.8 0.9
Junction Temperature (TJ) -- (°C)
Figure 5: Power Dissipation (Typical) vs. RMS
On-State Current
°C
Maximum Allowable
Case Temperature (TC )-
Average On-State Power
Dissipation [PD(AV)] - (Watts)
150
4
3.5
3
2.5
2
1.5
1
140
130
120
110
100
90
0.5
80
0
1
2
3
4
0
1
Figure 7: Maximum Allowable Case Temperature
vs. Average On-State Current
3
4
(RMS)]
5
- (Amps)
Figure 8: P
eak Capacitor Discharge Current
1000
160
Peak Discharge Current (ITM) - Amps
150
Maximum Allowable
Case Temperature (TC )- °C
2
RMS On-State Current [IT
RMS On-State Current [I T(RMS)] - (Amps)
140
130
120
110
100
90
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Average On -State Current [AV ] - (Amps)
SJxx04xSx Series
2
160
4.5
80
1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9
Figure 6: M
aximum Allowable Case Temperature
vs. RMS On-State Current
5
0
1
Instantaneous On-state Voltage (VT) – Volts
100
ITRM
tW
10
0.5
1.0
10.0
50.0
Pulse Current Duration (tW) - ms
©2017 Littelfuse, Inc
Specifications are subject to change without notice.
Revised: 08/02/17
Thyristors
4 Amp High Temperature Sensitive SCRs
Figure 9: Surge Peak On-State Current vs. Number of Cycles
Peak Surge (Non-repetitive)
On-state Current (ITSM) – Amps
1000
SUPPLY FREQUENCY: 60 Hz Sinusoidal
LOAD: Resistive
RMS On-State Current: [IT(RMS)]: Maximum Rated
Value at Specified Case Temperature
100
Notes:
1. G
ate control may be lost during and immediately
following surge current interval.
2. O
verload may not be repeated until junction
temperature has returned to steady-state
rated value.
10
1
1
10
100
1000
Surge Current Duration -- Full Cycles
Figure 10: Typical DC Gate Trigger Current with RGK vs.
Junction Temperature
Figure 11: Typical DC Holding Current with RGK vs.
Junction Temperature
10.00
10.0E+00
RGK=100Ω
RGK=100Ω
1.00
IH (mA)
IGT (mA)
RGK=220Ω
RGK=470Ω
RGK=220Ω
1.0E+00
RGK=470Ω
RGK=1KΩ
RGK=1KΩ
0.10
-40
-15
10
35
60
85
110
135 150
Junction Temperature (T ) -- (°C)
100.0E-03
-40
-15
10
35
60
85
110
135 150
Junction Temperature (T ) -- (°C)
Figure 12: Typical Static dv/dt with RGK vs. Junction
Temperature
1000
Static dv/dt (V/μs)
RGK=100Ω
100
RGK=220Ω
RGK=470Ω
10
RGK=1KΩ
1
25
SJxx04xSx Series
75
125
©2017 Littelfuse, Inc
Specifications are subject to change without notice.
Revised: 08/02/17
Thyristors
4 Amp High Temperature Sensitive SCRs
Soldering Parameters
Pb – Free assembly
Pre Heat
- Temperature Min (Ts(min))
150°C
- Temperature Max (Ts(max))
200°C
- Time (min to max) (ts)
60 – 180 secs
Average ramp up rate (Liquidus Temp)
(TL) to peak
5°C/second max
TS(max) to TL - Ramp-up Rate
5°C/second max
Reflow
- Temperature (TL) (Liquidus)
Ramp-up
TL
tL
TS(max)
Preheat
TS(min)
Peak Temperature (TP)
260+0/-5 °C
Time within 5°C of actual peak
Temperature (tp)
20 – 40 seconds
Ramp-down Rate
5°C/second max
Time 25°C to peak Temperature (TP)
8 minutes Max.
Do not exceed
280°C
25
time to peak temperature
Test
Physical Specifications
100% Matte Tin-plated
Body Material
UL Recognized epoxy meeting
flammability rating V-0
Lead Material
Copper Alloy
Design Considerations
Careful selection of the correct component for the
application’s operating parameters and environment will
go a long way toward extending the operating life of the
Thyristor. Good design practice should limit the maximum
continuous current through the main terminals to 75% of
the component rating. Other ways to ensure long life for
a power discrete semiconductor are proper heat sinking
and selection of voltage ratings for worst case conditions.
Overheating, overvoltage (including dv/dt), and surge
currents are the main killers of semiconductors. Correct
mounting, soldering, and forming of the leads also help
protect against component damage.
SJxx04xSx Series
Time
Environmental Specifications
AC Blocking
Terminal Finish
Ramp-do
Ramp-down
tS
217°C
60 – 150 seconds
- Time (tL)
tP
TP
Temperature
Reflow Condition
Temperature Cycling
Temperature/
Humidity
High Temp Storage
Specifications and Conditions
MIL-STD-750, M-1040, Cond A Applied
Peak AC voltage for 1008 hours
MIL-STD-750, M-1051,
100 cycles; -40°C to +150°C; 15-min
dwell-time
EIA / JEDEC, JESD22-A101
1008 hours; 160V - DC: 85°C; 85%
rel humidity
MIL-STD-750, M-1031,
1008 hours; 150°C
Low-Temp Storage
1008 hours; -40°C
Resistance to
Solder Heat
MIL-STD-750 Method 2031
Solderability
ANSI/J-STD-002, category 3, Test A
Lead Bend
MIL-STD-750, M-2036 Cond E
Moisture Sensitivity
Level
Level 1, JEDEC-J-STD-020
©2017 Littelfuse, Inc
Specifications are subject to change without notice.
Revised: 08/02/17
Thyristors
4 Amp High Temperature Sensitive SCRs
Dimensions — TO-251AA (V/I-Package) — V/I-PAK Through Hole
TC MEASURING POINT
E
Anode
H
D
AREA: 0.040 IN2
Dimension
5.28
.208
J
A
5.34
.210
B
R
P
Q
S
K
C
Cathode
L
F
Anode
GATE
G
I
Inches
Min
Typ
Millimeters
Max
Min
Typ
Max
A
0.037
0.040
0.043
0.94
1.01
1.09
B
0.235
0.242
0.245
5.97
6.15
6.22
C
0.350
0.361
0.375
8.89
9.18
9.53
D
0.205
0.208
0.213
5.21
5.29
5.41
E
0.255
0.262
0.265
6.48
6.66
6.73
F
0.027
0.031
0.033
0.69
0.80
0.84
G
0.087
0.090
0.093
2.21
2.28
2.36
H
0.085
0.092
0.095
2.16
2.34
2.41
I
0.176
0.180
0.184
4.47
4.57
4.67
J
0.018
0.020
0.023
0.46
0.51
0.58
K
0.035
0.037
0.039
0.90
0.95
1.00
L
0.018
0.020
0.023
0.46
0.52
0.58
P
0.042
0.047
0.052
1.06
1.20
1.32
Q
0.034
0.039
0.044
0.86
1.00
1.11
R
0.034
0.039
0.044
0.86
1.00
1.11
S
0.074
0.079
0.084
1.86
2.00
2.11
Dimensions — TO-252AA (D-Package) — D-PAK Surface Mount
Anode
E
D
6.71
.264
5.28
.208
TC MEASURING POINT
Dimension
6.71
.264
B
C
P
Q
Cathode
GATE
F
Anode
1.60
.063
1.80
.071
AREA : 0.040 IN
2
3
.118
G
I
O
L
K
M
N
SJxx04xSx Series
J
H
4.60
.181
Millimeters
Min
Typ
Max
Min
Typ
Max
A
0.037
0.040
0.043
0.94
1.01
1.09
B
0.235
0.243
0.245
5.97
6.16
6.22
C
0.106
0.108
0.113
2.69
2.74
2.87
A
5.34
.210
Inches
D
0.205
0.208
0.213
5.21
5.29
5.41
E
0.255
0.262
0.265
6.48
6.65
6.73
F
0.027
0.031
0.033
0.69
0.80
0.84
G
0.087
0.090
0.093
2.21
2.28
2.36
H
0.085
0.092
0.095
2.16
2.33
2.41
I
0.176
0.179
0.184
4.47
4.55
4.67
J
0.018
0.020
0.023
0.46
0.51
0.58
K
0.035
0.037
0.039
0.90
0.95
1.00
L
0.018
0.020
0.023
0.46
0.51
0.58
M
0.000
0.000
0.004
0.00
0.00
0.10
N
0.021
0.026
0.027
0.53
0.67
0.69
O
0°
0°
5°
0°
0°
5°
P
0.042
0.047
0.052
1.06
1.20
1.32
Q
0.034
0.039
0.044
0.86
1.00
1.11
©2017 Littelfuse, Inc
Specifications are subject to change without notice.
Revised: 08/02/17
Thyristors
4 Amp High Temperature Sensitive SCRs
TO-252 Embossed Carrier Reel Pack (RP) Specifications
* Cover tape
0.315
(8.0)
0.059
Dia
(1.5)
Cathode
XXXXXX
XXXXXX
*
DC
0.524
(13.3)
DC
0.63
(16.0)
XXXXXX
Gate
XXXXXX
0.157
(4.0)
DC
Meets all EIA-481-2 Standards
Anode
12.99
(330.0)
0.512 (13.0) Arbor
Hole Dia.
Dimensions
are in inches
(and millimeters).
0.64
(16.3)
Direction of Feed
Product Selector
Part Number
Voltage
Gate Sensitivity
Type
Package
X
0.2mA
Sensitive SCR
TO-251
X
0.2mA
Sensitive SCR
TO-252
400V
600V
SJxx04VS2
X
SJxx04DS2
X
Note: xx = Voltage
Packing Options
Part Number
Marking
Weight
Packing Mode
Base Quantity
SJxx04DS2TP
SJxx04DS2
0.3 g
Tube
750 (75 per tube)
SJxx04DS2RP
SJxx04DS2
0.3 g
Embossed Carrier
2500
SJxx04VS2TP
SJxx04VS2
0.4 g
Tube
750 (75 per tube)
Note: xx = Voltage
Part Numbering System
Part Marking System
SJ 60 04 D S2
COMPONENT TYPE
SJ: SCR
VOLTAGE RATING
40 : 400V
60 : 600V
CURRENT
04: 4A
SENSITIVITY
S2:0.2mA
PACKAGE TYPE
V : TO-251 (VPAK)
D : TO-252 (DPAK)
SJxx04DS2
YMLDD
®
Date Code Marking
Y:Year Code
M: Month Code
L: Location Code
DD: Calendar Code
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and
test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.
Read complete Disclaimer Notice at www.littelfuse.com/disclaimier-electronics.
SJxx04xSx Series
©2017 Littelfuse, Inc
Specifications are subject to change without notice.
Revised: 08/02/17
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