SJ6008DS2RP

Thyristors 8 Amp High Temperature Sensitive & Standard SCRs SJxx08xSx & SJxx08xx Series RoHS Description This SJxx080xx high temperature SCR series is ideal for uni-directional switch applications such as phase control in heating, motor speed controls, converters/rectifiers and capacitive discharge ignitions. These SCRs have a low gate current trigger level of 6mA or 15mA maximum at approximately 1.5V, with a sensitive version of this series having a gate trigger current less than 200µA. The sensitive gate SCR version is easily triggered by sense coils, proximity switches, and microprocessors. Features & Benefits Main Features Symbol IT(RMS) VDRM /VRRM IGT Value Unit 8 A 400 or 600 V 0.2 to 15 mA Schematic Symbol A • Voltage capability up to 600 V • 150°C maximum junction temperature • Surge capability up to 100 A at 60 Hz half cycle • Halogen free and RoHS compliant Applications Typical applications includes capacitive discharge system for motorcycle engine CDI, portable generator engine ignition, strobe lights and nailers, as well as generic rectifiers, battery voltage regulators and converters. Also controls for power tools, home/brown goods and white goods appliances. K G Absolute Maximum Ratings — Sensitive SCRs Parameter Test Conditions Value Unit IT(RMS) Symbol RMS on-state current TC = 120°C 8 A IT(AV) Average on-state current TC = 120°C 5.1 A single half cycle; f = 50 Hz; TJ (initial) = 25°C 83 single half cycle; f = 60 Hz; TJ (initial) = 25°C 100 ITSM Peak non-repetitive surge current I2t I2t Value for fusing tp = 8.3 ms 41 A2s Critical rate of rise of on-state current f = 60 Hz, TJ = 150 °C 70 A/μs Peak gate current Pw=20 μs, TJ = 150 °C 0.5 A Average gate power dissipation TJ = 150 °C 0.1 W -40 to 150 °C -40 to 150 °C VDRM/VRRM+100 V di/dt IGM PG(AV) Storage temperature range Tstg TJ VDSM/VRSM Operating junction temperature range Peak non-repetitive blocking voltage SJxx08xSx & SJxx08xx Series Pw=100 μs A ©2017 Littelfuse, Inc Specifications are subject to change without notice. Revised: 08/08/17 Thyristors 8 Amp High Temperature Sensitive & Standard SCRs Absolute Maximum Ratings — Standard SCRs Parameter Test Conditions Value Unit IT(RMS) Symbol RMS on-state current TC = 125 °C 8 A IT(AV) Average on-state current TC = 125 °C 5.1 A ITSM Peak non-repetitive surge current single half cycle; f = 50 Hz; TJ (initial) = 25 °C single half cycle; f = 60 Hz; TJ (initial) = 25 °C I2t I2t Value for fusing tp = 8.3 ms 41 A2s Critical rate-of-rise of on-state current f = 60 Hz TJ = 150 °C 100 A/μs Peak gate current Pw=20 μs, TJ = 150°C 0.5 A Average gate power dissipation TJ = 150 °C 0.1 W Storage temperature range -40 to 150 °C Operating junction temperature range -40 to 150 °C VDRM/VRRM+100 V di/dt IGM PG(AV) Tstg TJ VDSM/VRSM Peak non-repetitive blocking voltage 83 A 100 Pw=100 μs Electrical Characteristics (TJ = 25°C, unless otherwise specified) – Sensitive SCRs Symbol IGT VGT dv/dt VGD Value Test Conditions VD = 6V RL = 100 Ω VD = VDRM; RGK = 220Ω ; TJ = 125°C Unit SJxx08xS2 MIN. 20 μA MAX. 200 μA MAX. 0.8 V MIN. 15 V/μs VD = VDRM; RL = 3.3 kΩ; TJ = 125°C MIN. 0.2 V VD = VDRM; RL = 3.3 kΩ; TJ = 150°C MIN. 0.1 V VGRM IGR = 10μA MIN. 6 V IH IT = 20mA (initial) MAX. 6 mA MAX. 130 μs TYP. 6 μs tq tgt tp=50µs; dv/dt=5V/µs; di/dt=-30A/µs IG = 2 x IGT; PW = 15µs; IT = 8A NOTE: xx = voltage Electrical Characteristics (TJ = 25°C, unless otherwise specified) – Standard SCRs Symbol IGT VGT dv/dt VGD IH Value Test Conditions VD = 12V RL = 60 Ω VD = VDRM; gate open; TJ = 125°C VD = VDRM; gate open; TJ = 150°C SJxx08x1 SJxx08x Unit MAX. 6 15 mA MAX. 1.5 1.5 V 100 200 50 120 MIN. VD = VDRM; RL = 3.3 kΩ; TJ = 125°C MIN. 0.2 0.2 VD = VDRM; RL = 3.3 kΩ; TJ = 150°C MIN. 0.1 0.1 V/μs V IT = 200mA (initial) MAX. 20 30 mA tq IT=0.5A; tp=50µs; dv/dt=5V/µs; di/dt=-30A/µs MAX. 30 35 μs tgt IG = 2 x IGT; PW = 15µs; IT = 8A TYP. 0.5 2 μs NOTE: xx = voltage SJxx08xSx & SJxx08xx Series ©2017 Littelfuse, Inc Specifications are subject to change without notice. Revised: 07/31/17 Thyristors 8 Amp High Temperature Sensitive & Standard SCRs Static Characteristics Symbol Test Conditions IT = 16A; tp = 380 µs VTM SJxx08xS2 IDRM / IRRM @ VDRM / VRRM MAX. Value Unit 1.6 V TJ = 25°C 400 - 600V 5 TJ = 125°C, RGK = 220Ω 400 - 600V 1000 TJ = 150°C, RGK = 220Ω 400 - 600V TJ = 25°C 400 - 600V TJ = 125°C 400 - 600V 1000 TJ = 150°C 400 - 600V 3000 SJxx08xx 3000 MAX. μA 10 Thermal Resistances Symbol Parameter Junction to case (AC) Rθ(J-C) Value SJxx08xS2 1.2 SJxx08xx 1.2 Unit °C/W Note: xx = voltage Figure 1: Normalized DC Gate Trigger Current vs. Junction Temperature (Sensitive SCR) Figure 2: N  ormalized DC Gate Trigger Current vs. Junction Temperature (Standard SCR) 1.8 Ratio of IGT / IGT (TJ = 25°C) 1.6 Ratio of IGT / IGT (TJ = 25°C) 1.8 RGK=1K 1.4 1.2 1 RGK=220Ω 0.8 0.6 1.6 1.4 1.2 1 0.8 0.6 0.4 0.4 0.2 0.2 0 -40 -15 10 35 60 85 110 0 135 150 -40 -15 Junction Temperature (TJ) -- (°C) 35 60 85 110 135 150 Junction Temperature (TJ) -- (°C) Figure 3: Normalized DC Gate Trigger Voltage vs. Junction Temperature Figure 4: N  ormalized DC Holding Current vs. Junction Temperature 2.5 1.4 SJxx08xS2 1.2 Ratio of I H / I H (TJ = 25°C) Ratio of VGT / VGT (TJ = 25°C) 10 1 SJxx08xx 0.8 0.6 0.4 SJxx08xS2 2 1.5 1 SJxx08xx 0.5 0.2 0 0 -40 -15 10 35 60 85 110 Junction Temperature (TJ) -- (°C) SJxx08xSx & SJxx08xx Series 135 150 -40 -15 10 35 60 85 110 135 150 Junction Temperature (TJ) -- (°C) ©2017 Littelfuse, Inc Specifications are subject to change without notice. Revised: 07/31/17 Thyristors 8 Amp High Temperature Sensitive & Standard SCRs Figure 6: P  ower Dissipation (Typical) vs. RMS On-State Current 35 Average On-State Power Dissipation [P D(AV)] - (Watts) Intantaneous On-state Current (IT ) – Amps Figure 5: On-State Current vs. On-State Voltage (Typical) 30 SJxx08xx 25 20 SJxx08DS2 15 10 5 0 14 12 10 8 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 SJxx08xx 6 4 2 0 0.7 SJxx08DS2 0 2 160 160 150 150 SJxx08xx 130 SJxx08DS2 120 110 100 8 10 140 SJxx08xx 130 SJxx08DS2 120 110 100 90 90 80 6 Figure 8: M  aximum Allowable Case Temperature vs. Average On-State Current Maximum Allowable Case Temperature (TC )- °C Maximum Allowable Case Temperature (TC )- °C Figure 7: Maximum Allowable Case Temperature vs. RMS On-State Current 140 4 RMS On-State Current [I T(RMS)] - (Amps) Instantaneous On-state Voltage (VT ) – Volts 0 2 4 6 RMS On-State Current [IT 8 (RMS)] 10 - (Amps) 80 0 1 2 3 4 5 6 Average On -State Current [AV ] - (Amps) Figure 9: Peak Capacitor Discharge Current Peak Discharge Current (ITM) - Amps 1000 100 ITRM tW 10 0.5 1.0 10.0 50.0 Pulse Current Duration (tW) - ms SJxx08xSx & SJxx08xx Series ©2017 Littelfuse, Inc Specifications are subject to change without notice. Revised: 07/31/17 Thyristors 8 Amp High Temperature Sensitive & Standard SCRs Figure 10: Surge Peak On-State Current vs. Number of Cycles 1000 Peak Surge (Non-repetitive) On-state Current (ITSM) – Amps SUPPLY FREQUENCY: 60 Hz Sinusoidal LOAD: Resistive RMS On-State Current: [IT(RMS)]: Maximum Rated Value at Specified Case Temperature 100 Notes: 1. G  ate control may be lost during and immediately following surge current interval. 2. O  verload may not be repeated until junction temperature has returned to steady-state rated value. 10 1 1 10 100 1000 Surge Current Duration -- Full Cycles Figure 11: Typical DC Gate Trigger Current with RGK vs. Junction Temperature (Sensitive SCR) Figure 12: Typical DC Holding Current with RGK vs. Junction Temperature (Sensitive SCR) 10 RGK=100Ω 10 RGK=220Ω RGK=100Ω RGK=470Ω 1 IH (mA) IGT (mA) RGK=220Ω RGK=1KΩ 0.1 0.01 RGK=470Ω 1 No RGK -40 -20 0 20 40 60 No RGK 80 0.1 100 120 140 Junction Temperature (T ) -- (°C) -40 -20 0 20 40 60 RGK=1KΩ 80 100 120 140 Junction Temperature (T ) -- (°C) Figure 13: Typical Static dv/dt with RGK vs. Junction Temperature (Sensitive SCR) 10000 Static dv/dt (V/μs) 1000 RGK=100Ω RGK=220Ω 100 RGK=470Ω 10 1 RGK=1KΩ 25 45 SJxx08xSx & SJxx08xx Series 65 85 105 Junction Temperature (T ) -- (°C) 125 ©2017 Littelfuse, Inc Specifications are subject to change without notice. Revised: 07/31/17 Thyristors 8 Amp High Temperature Sensitive & Standard SCRs Soldering Parameters Pb – Free assembly Pre Heat - Temperature Min (Ts(min)) 150°C - Temperature Max (Ts(max)) 200°C - Time (min to max) (ts) 60 – 180 secs Average ramp up rate (Liquidus Temp) (TL) to peak 5°C/second max TS(max) to TL - Ramp-up Rate 5°C/second max Reflow Ramp-up TL tL TS(max) Preheat TS(min) 60 – 150 seconds - Time (tL) Peak Temperature (TP) 260+0/-5 °C Time within 5°C of actual peak Temperature (tp) 20 – 40 seconds Ramp-down Rate 5°C/second max Time 25°C to peak Temperature (TP) 8 minutes Max. Do not exceed 280°C Physical Specifications 25 time to peak temperature Body Material UL Recognized epoxy meeting flammability rating V-0 Lead Material Copper Alloy Test Specifications and Conditions MIL-STD-750, M-1040, Cond A Applied Peak AC voltage for 1008 hours MIL-STD-750, M-1051, 100 cycles; -40°C to +150°C; 15-min dwell-time EIA / JEDEC, JESD22-A101 1008 hours; 160V - DC: 85°C; 85% rel humidity MIL-STD-750, M-1031, 1008 hours; 150°C AC Blocking Temperature Cycling Temperature/ Humidity Design Considerations Careful selection of the correct component for the application’s operating parameters and environment will go a long way toward extending the operating life of the Thyristor. Good design practice should limit the maximum continuous current through the main terminals to 75% of the component rating. Other ways to ensure long life for a power discrete semiconductor are proper heat sinking and selection of voltage ratings for worst case conditions. Overheating, overvoltage (including dv/dt), and surge currents are the main killers of semiconductors. Correct mounting, soldering, and forming of the leads also help protect against component damage. High Temp Storage Part Numbering System Part Marking System SJ 60 08 D S2 VOLTAGE RATING 40 : 400V 60 : 600V CURRENT 08: 8A SJxx08xSx & SJxx08xx Series Time Environmental Specifications 100% Matte Tin-plated COMPONENT TYPE SJ: SCR Ramp-do Ramp-down tS 217°C - Temperature (TL) (Liquidus) Terminal Finish tP TP Temperature Reflow Condition Low-Temp Storage 1008 hours; -40°C Resistance to Solder Heat MIL-STD-750 Method 2031 Solderability ANSI/J-STD-002, category 3, Test A Lead Bend MIL-STD-750, M-2036 Cond E Moisture Sensitivity Level Level 1, JEDEC-J-STD-020 SJxx08DS2 SENSITIVITY & TYPE Sensitive SCR: S2: 0.2mA Standard SCR: 1: 6mA (blank): 15mA PACKAGE TYPE V : TO-251 (VPAK) D : TO-252 (DPAK) YMLDD ® Date Code Marking Y:Year Code M: Month Code L: Location Code DD: Calendar Code ©2017 Littelfuse, Inc Specifications are subject to change without notice. Revised: 07/31/17 Thyristors 8 Amp High Temperature Sensitive & Standard SCRs Dimensions — TO-251AA (V/I-Package) — V/I-PAK Through Hole TC MEASURING POINT E Anode H D AREA: 0.040 IN2 Dimension 5.28 .208 J A 5.34 .210 B R P Q S K C Cathode L F Anode GATE G I Inches Min Typ Millimeters Max Min Typ Max A 0.037 0.040 0.043 0.94 1.01 1.09 B 0.235 0.242 0.245 5.97 6.15 6.22 C 0.350 0.361 0.375 8.89 9.18 9.53 D 0.205 0.208 0.213 5.21 5.29 5.41 E 0.255 0.262 0.265 6.48 6.66 6.73 F 0.027 0.031 0.033 0.69 0.80 0.84 G 0.087 0.090 0.093 2.21 2.28 2.36 H 0.085 0.092 0.095 2.16 2.34 2.41 I 0.176 0.180 0.184 4.47 4.57 4.67 J 0.018 0.020 0.023 0.46 0.51 0.58 K 0.035 0.037 0.039 0.90 0.95 1.00 L 0.018 0.020 0.023 0.46 0.52 0.58 P 0.042 0.047 0.052 1.06 1.20 1.32 Q 0.034 0.039 0.044 0.86 1.00 1.11 R 0.034 0.039 0.044 0.86 1.00 1.11 S 0.074 0.079 0.084 1.86 2.00 2.11 Dimensions — TO-252AA (D-Package) — D-PAK Surface Mount Anode E D 6.71 .264 5.28 .208 TC MEASURING POINT Dimension 6.71 .264 B C P Q Cathode GATE F Anode 1.60 .063 1.80 .071 AREA : 0.040 IN 2 3 .118 G I O L K M N SJxx08xSx & SJxx08xx Series J H 4.60 .181 Millimeters Min Typ Max Min Typ Max A 0.037 0.040 0.043 0.94 1.01 1.09 B 0.235 0.243 0.245 5.97 6.16 6.22 C 0.106 0.108 0.113 2.69 2.74 2.87 A 5.34 .210 Inches D 0.205 0.208 0.213 5.21 5.29 5.41 E 0.255 0.262 0.265 6.48 6.65 6.73 F 0.027 0.031 0.033 0.69 0.80 0.84 G 0.087 0.090 0.093 2.21 2.28 2.36 H 0.085 0.092 0.095 2.16 2.33 2.41 I 0.176 0.179 0.184 4.47 4.55 4.67 J 0.018 0.020 0.023 0.46 0.51 0.58 K 0.035 0.037 0.039 0.90 0.95 1.00 L 0.018 0.020 0.023 0.46 0.51 0.58 M 0.000 0.000 0.004 0.00 0.00 0.10 N 0.021 0.026 0.027 0.53 0.67 0.69 O 0° 0° 5° 0° 0° 5° P 0.042 0.047 0.052 1.06 1.20 1.32 Q 0.034 0.039 0.044 0.86 1.00 1.11 ©2017 Littelfuse, Inc Specifications are subject to change without notice. Revised: 07/31/17 Thyristors 8 Amp High Temperature Sensitive & Standard SCRs TO-252 Embossed Carrier Reel Pack (RP) Specifications * Cover tape 0.315 (8.0) 0.059 Dia (1.5) Cathode XXXXXX XXXXXX * DC 0.524 (13.3) DC 0.63 (16.0) XXXXXX Gate XXXXXX 0.157 (4.0) DC Meets all EIA-481-2 Standards Anode 12.99 (330.0) 0.512 (13.0) Arbor Hole Dia. Dimensions are in inches (and millimeters). 0.64 (16.3) Direction of Feed Product Selector Part Number Voltage Gate Sensitivity Type Package X 0.2mA Sensitive SCR TO-251 X 0.2mA Sensitive SCR TO-252 X X 15mA Standard SCR TO-251 X X 15mA Standard SCR TO-252 SJxx08V1 X X 6mA Standard SCR TO-251 SJxx08D1 X X 6mA Standard SCR TO-252 400V 600V SJxx08VS2 X SJxx08DS2 X SJxx08V SJxx08D Note: xx = Voltage Packing Options Part Number Marking Weight Packing Mode Base Quantity SJxx08DS2TP SJxx08DS2 0.3 g Tube 750 (75 per tube) SJxx08DS2RP SJxx08DS2 0.3 g Embossed Carrier 2500 SJxx08VS2TP SJxx08VS2 0.4 g Tube 750 (75 per tube) SJxx08DTP SJxx08D 0.3 g Tube 750 (75 per tube) SJxx08DRP SJxx08D 0.3 g Embossed Carrier 2500 SJxx08VTP SJxx08V 0.4 g Tube 750 (75 per tube) SJxx08D1TP SJxx08D1 0.3 g Tube 750 (75 per tube) SJxx08D1RP SJxx08D1 0.3 g Embossed Carrier 2500 SJxx08V1TP SJxx08V1 0.4 g Tube 750 (75 per tube) Note: xx = Voltage Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimier-electronics. SJxx08xSx & SJxx08xx Series ©2017 Littelfuse, Inc Specifications are subject to change without notice. Revised: 07/31/17