TVS Diode Array
General Purpose ESD Protection - SM05 through SM36
SM Series 400W TVS Diode Array
RoHS
Pb GREEN
Description
The SM series TVS Diode Array is designed to protect
sensitive equipment from damage due to electrostatic
discharge (ESD), electrical fast transients (EFT), and
lightning induced surges.
The SM series can absorb repetitive ESD strikes above
the maximum level specified in IEC 61000-4-2 international
standard without performance degradation and safely
dissipate up to 24A of 8/20µs induced surge current (IEC61000-4-5) with very low clamping voltages.
Pinout and Functional Block Diagram
Features
(AEC-Q101 qualified)
1
3
2
• ESD, IEC 61000-4-2,
±30kV contact, ±30kV air
• Working voltages: 5V,
12V, 15V, 24V and 36V
• EFT, IEC 61000-4-4, 50A
(5/50ns)
• Low clamping voltage
• Lightning, IEC 610004-5 2nd edition, 24A
(tP=8/20μs, SM05)
• AEC-Q101 qualified
(SOT23-3 package)
• Low leakage current
• Moisture Sensitivity
Level(MSL -1)
Applications
• Industrial Equipment
• Legacy Ports
• Test and Medical
Equipment
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
(RS-232, RS-485)
• Security and Alarm
Systems
• Point-of-Sale Terminals
• Motor Controls
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
RS-232 Application Example
RS-232 Port
Transceiver
RD
TD
RTS
IC
CTS
DSR
DTR
SM15 (x6)
Case GND
(bidirectional implementation)
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/22/19
TVS Diode Array
General Purpose ESD Protection - SM05 through SM36
Absolute Maximum Ratings
Symbol
Parameter
Value
Units
400
W
Operating Temperature
-40 to 150
°C
Storage Temperature
-55 to 150
°C
PPk
Peak Pulse Power (tp=8/20μs)
TOP
TSTOR
Notes:
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the component. This is a stress only rating and
operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied.
SM05 Electrical Characteristics (TOP=25ºC)
Parameter
Symbol
Test Conditions
Reverse Standoff Voltage
VRWM
IR≤1μA
VR
IR=1mA
Reverse Voltage Drop
Leakage Current
ILEAK
Clamp Voltage1
VC
Typ
Max
Units
5.0
V
6.0
V
VR=5V
1.0
μA
IPP=1A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3
9.8
V
IPP=10A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3
Dynamic Resistance2
RDYN
TLP, tp=100ns, I/O to GND
Peak Pulse Current
(8/20µs)1
Ipp
tp=8/20µs
ESD Withstand Voltage1
VESD
Diode Capacitance1
Min
13.0
0.19
V
Ω
24.0
A
IEC 61000-4-2 (Contact Discharge)
±30
kV
IEC 61000-4-2 (Air Discharge)
±30
kV
CI/O-GND
Reverse Bias=0V, f=1MHz
400
pF
CI/O-I/O
Reverse Bias=0V, f=1MHz
350
pF
SM12 Electrical Characteristics (TOP=25ºC)
Parameter
Symbol
Test Conditions
Reverse Standoff Voltage
VRWM
IR≤1μA
VR
IR=1mA
ILEAK
VR=12V
Reverse Voltage Drop
Leakage Current
Clamp Voltage1
Dynamic Resistance
VC
Max
Units
12.0
V
1.0
μA
IPP=1A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3
18.5
V
IPP=10A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3
22.5
V
RDYN
TLP, tp=100ns, I/O to GND
Peak Pulse Current
(8/20µs)1
Ipp
tp=8/20µs
ESD Withstand Voltage1
VESD
Diode Capacitance1
2
Min
Typ
13.3
V
0.25
Ω
17.0
A
IEC 61000-4-2 (Contact Discharge)
±30
kV
IEC 61000-4-2 (Air Discharge)
±30
kV
CI/O-GND
Reverse Bias=0V, f=1MHz
150
pF
CI/O-I/O
Reverse Bias=0V, f=1MHz
120
pF
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/22/19
TVS Diode Array
General Purpose ESD Protection - SM05 through SM36
SM15 Electrical Characteristics (TOP=25ºC)
Parameter
Symbol
Test Conditions
Reverse Standoff Voltage
VRWM
IR≤1μA
VR
IR=1mA
ILEAK
Reverse Voltage Drop
Leakage Current
Clamp Voltage1
Dynamic Resistance
VC
Max
Units
15.0
V
VR=15V
1.0
μA
IPP=1A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3
24.0
V
IPP=10A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3
30.0
V
RDYN
TLP, tp=100ns, I/O to GND
Peak Pulse Current
(8/20µs)1
Ipp
tp=8/20µs
ESD Withstand Voltage1
VESD
2
Diode Capacitance1
Min
Typ
16.7
V
0.30
Ω
12.0
A
IEC 61000-4-2 (Contact Discharge)
±30
kV
IEC 61000-4-2 (Air Discharge)
±30
kV
CI/O-GND
Reverse Bias=0V, f=1MHz
100
pF
CI/O-I/O
Reverse Bias=0V, f=1MHz
75
pF
SM24 Electrical Characteristics (TOP=25ºC)
Parameter
Symbol
Test Conditions
Reverse Standoff Voltage
VRWM
IR≤1μA
VR
IR=1mA
ILEAK
Reverse Voltage Drop
Leakage Current
Clamp Voltage1
Dynamic Resistance
VC
Max
Units
24.0
V
VR=24V
1.0
μA
IPP=1A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3
36.0
V
IPP=5A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3
42.0
V
RDYN
TLP, tp=100ns, I/O to GND
Peak Pulse Current
(8/20µs)1
Ipp
tp=8/20µs
ESD Withstand Voltage1
VESD
2
Diode Capacitance1
Min
Typ
26.7
V
0.50
Ω
7.0
A
IEC 61000-4-2 (Contact Discharge)
±30
kV
IEC 61000-4-2 (Air Discharge)
±30
kV
CI/O-GND
Reverse Bias=0V, f=1MHz
65
pF
CI/O-I/O
Reverse Bias=0V, f=1MHz
50
pF
Max
Units
36.0
V
SM36 Electrical Characteristics (TOP=25ºC)
Parameter
Symbol
Reverse Standoff Voltage
VRWM
IR≤1μA
VR
IR=1mA
ILEAK
VR=36V
1.0
μA
IPP=1A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3
52.0
V
IPP=4A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3
62.0
V
Reverse Voltage Drop
Leakage Current
Clamp Voltage1
Dynamic Resistance
VC
Test Conditions
RDYN
TLP, tp=100ns, I/O to GND
Peak Pulse Current
(8/20µs)1
Ipp
tp=8/20µs
ESD Withstand Voltage1
VESD
Diode Capacitance1
2
Min
Typ
40.0
V
0.65
Ω
5.0
A
IEC 61000-4-2 (Contact Discharge)
±30
kV
IEC 61000-4-2 (Air Discharge)
±30
kV
CI/O-GND
Reverse Bias=0V, f=1MHz
50
pF
CI/O-I/O
Reverse Bias=0V, f=1MHz
40
pF
Note:
1
2
Parameter is guaranteed by design and/or component characterization.
Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/22/19
TVS Diode Array
General Purpose ESD Protection - SM05 through SM36
Non-Repetitive Peak Pulse Power vs. Pulse Time
Power Derating Curve
110
10
90
1
0.1
0.01
0.1
1
10
100
1000
Pulse Duration - t p (µs)
% of Rated Power I PP
Peak Pulse Power - P
pk (kW)
100
80
70
60
50
40
30
20
10
0
8/20μs Pulse Waveform
SM05 Transmission
Plot
0
25Line Pulsing(TLP)
50
75
20
100%
18
90%
16
80%
14
70%
TLP Current (A)
Percent of IPP
Ambient Temperature - TA (oC)
SM05
110%
60%
50%
40%
12
10
8
30%
6
20%
4
10%
0%
100
2
0.0
5.0
10.0
15.0
20.0
25.0
0
30.0
0
Time (μs)
16
16
14
14
TLP Current (A)
TLP Current (A)
18
12
10
8
8
6
4
2
2
0
TLP Voltage (V)
12
10
4
15
10
12
6
10
8
SM15
20
18
5
6
SM15 Transmission Line Pulsing(TLP) Plot
SM12
0
4
TLP Voltage (V)
SM12 Transmission Line Pulsing(TLP) Plot
20
2
20
25
0
0
5
10
15
20
25
30
TLP Voltage (V)
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/22/19
125
TVS Diode Array
General Purpose ESD Protection - SM05 through SM36
SM24 Transmission Line Pulsing(TLP) Plot
SM24
20
18
18
16
16
14
14
12
10
8
12
10
8
6
6
4
4
2
2
0
0
5
10
15
20
SM36
20
TLP Current (A)
TLP Current (A)
SM36 Transmission Line Pulsing(TLP) Plot
25
30
35
0
40
0
5
10
15
20
TLP Voltage (V)
25
30
35
40
45
50
55
TLP Voltage (V)
Soldering Parameters
Pre Heat
Pb – Free assembly
- Temperature Min (Ts(min))
150°C
- Temperature Max (Ts(max))
200°C
- Time (min to max) (ts)
60 – 180 secs
Average ramp up rate (Liquidus) Temp (TL)
to peak
3°C/second max
TS(max) to TL - Ramp-up Rate
3°C/second max
Reflow
- Temperature (TL) (Liquidus)
217°C
- Temperature (tL)
60 – 150 seconds
260
Time within 5°C of actual peak
Temperature (tp)
20 – 40 seconds
Ramp-down Rate
6°C/second max
Time 25°C to peak Temperature (TP)
8 minutes Max.
Do not exceed
260°C
Critical Zone
TL to TP
Ramp-up
TL
TS(max)
tL
Ramp-do
Ramp-down
Preheat
TS(min)
25
Peak Temperature (TP)
+0/-5
tP
TP
Temperature
Reflow Condition
tS
time to peak temperature
Time
°C
Ordering Information
Part Number
Package
Marking
Min. Order Qty.
SM05-02HTG
SOT23-3
M05
3000
SM12-02HTG
SOT23-3
M12
3000
SM15-02HTG
SOT23-3
M15
3000
SM24-02HTG
SOT23-3
M24
3000
SM36-02HTG
SOT23-3
M36
3000
Product Characteristics
Lead Plating
Matte Tin
Lead Material
Copper Alloy
Lead Coplanarity
0.004 inches(0.102mm)
Substrate material
Silicon
Body Material
Molded Compound
Flammability
UL Recognized compound meeting
flammability rating V-0
Notes :
1. All dimensions are in millimeters
2. Dimensions include solder plating.
3. Dimensions are exclusive of mold flash & metal burr.
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/22/19
TVS Diode Array
General Purpose ESD Protection - SM05 through SM36
Part Marking System
SM xx –02 H T G
TVS Diode Arrays
(SPA® Diodes)
Series
Working
Voltage
Mxx
G= Green
T= Tape & Reel
Package
H: SOT23-3
Number of
Channels
Package Dimensions — SOT23-3
Package
Pins
JEDEC
b
3
502B
1
E1
E
Recommended Pad Layout
2
e
E
A
Part Numbering System
P
e1
D
M
P
A
A1
C
N
0
L1
0
A
A1
b
c
D
E
E1
e
e1
L1
M
N
O
P
M
N
SOT23-3
3
TO-236
Millimeters
Min
Max
0.89
1.12
0.01
0.1
0.3
0.5
0.08
0.2
2.8
3.04
2.1
2.64
1.2
1.4
0.95 BSC
1.90 BSC
0.54 REF
2.29
0.95
0.78
0.78
Inches
Min
Max
0.035
0.044
0.0004
0.004
0.012
0.020
0.003
0.008
0.110
0.120
0.083
0.104
0.047
0.055
0.038 BSC
0.075 BSC
0.021 REF
.090
0.038
.030TYP
.030TYP
Millimetres
Inches
Embossed Carrier Tape & Reel Specification — SOT23-3
Symbol
8mm TAPE AND REEL
GENERAL INFORMATION
1. 3000 PIECES PER REEL.
2. ORDER IN MULTIPLES OF FULL REELS ONLY.
3. MEETS EIA-481 REVISION "A" SPECIFICATIONS.
ACCESS HOLE
14.4mm
SOT23-3 (8mm POCKET PITCH)
13mm
180mm
60mm
USER DIRECTION OF FEED
Min
Max
Min
Max
E
1.65
1.85
0.065
0.073
F
3.40
3.60
0.134
0.142
P2
1.90
2.10
0.075
0.083
D
1.40
1.60
0.055
0.063
P0
3.90
4.10
0.154
0.161
W
7.70
8.30
0.303
0.327
P
3.90
4.10
0.154
0.161
A0
3.05
3.25
0.120
0.128
B0
2.67
2.87
0.105
0.113
K0
1.12
1.32
0.044
0.052
t
0.22
0.24
0.009
0.009
PIN 1
8.4mm
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/22/19
