TVS Diode Array (SPA® Diodes)
Low Capacitance ESD and Surge Protection - SP1255P Series
SP1255P Series 0.5pF, 12kV Diode Array for μUSB
RoHS Pb GREEN
Description
The SP1255P integrates three channels of ultra-low
capacitance steering diodes and a low voltage TVS diode to
provide maximum protection of the USB data and ID pins
against ESD per the IEC 61000-4-2 standard. An additional
12V TVS diode is included to provide lightning surge
protection for the USB VBUS pin up to 100A (tP=8/20μs) per
the IEC 61000-4-5 standard. The SP1255P provides superior
protection for current intensive applications such as fast
charging peripharals.
The SP1255P comes in a space saving 2.0x1.8mm μDFN
package with a typical height of 0.55mm making it an
ideal solution for smart phones, tablets, and other portable
electronics.
Pinout
Features
• RoHS compliant and lead-free
• AEC-101 qualified
For USB Voltage Bus Pin (VBUS)
• ESD, IEC 61000-4-2, ±30kV contact, ±30kV air
• EFT, IEC 61000-4-4, 80A (tP=5/50ns)
• Lightning, IEC 61000-4-5, 100A (tP=8/20μs)
• Protection for VBUS operating up to 12V
• Benchmark setting protection
• High current handling capability for fast charging
applications
Bottom View
For USB Data Pin (D+, D-, ID)
• ESD, IEC 61000-4-2, ±12kV contact, ±15kV air
• EFT, IEC 61000-4-4, 40A (tP=5/50ns)
Functional Block Diagram
• Lightning, IEC 61000-4-5 2nd edition, 4A (tP=8/20μs)
PIN 1
(V BUS)
PIN 2 (D+)
PIN 3 (D-)
PIN 4 (ID)
• 0.5pF capacitance
• Low clamping voltage and dynamic resistance (0.3Ω)
Applications
• USB 2.0
• USB OTG
PIN 5,6 (GND)
• μUSB
• Protection for the VBUS circuit on USB2.0 Fast Charging
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
Additional Information
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
Datasheet
Resources
Samples
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/06/19
TVS Diode Array (SPA® Diodes)
Low Capacitance ESD and Surge Protection - SP1255P Series
Absolute Maximum Ratings
Parameter
Value
Units
IPP (Pin 1)
Peak Current (tp=8/20μs)
100
A
IPP (Pin 2-4)
Peak Current (tp=8/20μs)
4
A
TOP
Operating Temperature
-40 to 125
°C
TSTOR
Storage Temperature
-55 to 150
°C
SP3012
Symbol
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied.
Electrical Characteristics (TOP=25ºC)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
12
V
13.0
13.5
16.5
V
0.1
µA
USB VBUS (Pin 1)
Reverse Standoff Voltage
VRWM
Pin 1 to GND
Reverse Breakdown Voltage
VBR
IT=1mA, Pin 1 to GND
Reverse Leakage Current
ILEAK
VR=12V, Pin 1 to GND
Forward Voltage
VF
Clamp Voltage1
IF=10mA, GND to Pin 1
VC
0.7
1.0
V
IPP=30A, tp=8/20µs, Fwd
0.6
16.5
18
V
IPP=100A, tp=8/20µs, Fwd
19.5
25
IEC 61000-4-2 (Contact)
±30
IEC 61000-4-2 (Air)
±30
ESD Withstand Voltage1
VESD
Diode Capacitance1
CD
Reverse Bias=0V, f=1MHz
Reverse Standoff Voltage
VRWM
Pin 2, 3 and 4 to GND
Reverse Breakdown Voltage
VBR
IT=2µA, Pin 2, 3 and 4 to GND
V
kV
kV
1300
2500
pF
4
V
7.5
V
USB D+, D-, ID (Pin 2, 3, 4)
Reverse Leakage Current
ILEAK
Clamp Voltage1
VC
Dynamic Resistance
RDYN
ESD Withstand Voltage1
VESD
Diode Capacitance
CI/O-GND
1
4.5
6.0
VR=2V, Pin 2, 3 and 4 to GND
0.02
VR=4V, Pin 2, 3 and 4 to GND
0.1
IPP=1A, tp=8/20µs, Fwd
6.6
8.0
IPP=2A, tp=8/20µs, Fwd
7.0
8.5
TLP, tP=100ns, Pin 2, 3 and 4 to GND2
0.3
µA
V
V
Ω
IEC 61000-4-2 (Contact)
±12
kV
IEC 61000-4-2 (Air)
±15
kV
Reverse Bias=0V, f=1MHz
0.5
0.6
pF
Note: 1 Parameter is guaranteed by design and/or device characterization.
2 Transmission Line Pulse (TLP) Test Setting: tP=100ns, tr=0.2ns ITLP and VTLP averaging window: star t1=70ns to t2=90ns
Capacitance vs. Reverse Bias (Pin1 to GND)
Capacitance vs. Reverse Bias (Pin2, 3, 4 to GND)
1100
1
1000
900
0.8
700
Capacitance (pF)
Capacitance (pF)
800
600
500
400
300
200
100
0
0.6
0.4
0.2
0
0
1
2
3
4
5
6
7
8
Bias Voltage (V)
9
10
11
12
0
0.5
1
1.5
2
2.5
3
3.5
4
Bias Voltage (V)
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/06/19
TVS Diode Array (SPA® Diodes)
Low Capacitance ESD and Surge Protection - SP1255P Series
Non-Repetitive Peak Pulse Power vs. Pulse Duration
(Pin1 to GND)
Non-Repetitive Peak Pulse Power vs. Pulse Duration
(Pin2, 3, 4 to GND)
1000
P eak Pulse Power - P pp (W)
P eak Pulse Power - P (kW)
pp
100
10
1
0.1
0.1
1
10
100
1
1000
100
10
0.1
1
P ulse Duration tp(µs)
Clamping Voltage vs. Peak Pulse Current (Pin1 to GND)
100
1000
Clamping Voltage vs. Peak Pulse Current (Pin2, 3, 4 to
GND)
28.0
12.0
24.0
10.0
Clamp Voltage (V )
C
Clamp Voltage (VC )
10
Pulse Duration - tp( µs)
20.0
16.0
12.0
8.0
8.0
6.0
4.0
2.0
4.0
0.0
0.0
0.0
20.0
40.0
60.0
80.0
1.0
100.0
3.0
4.0
5.0
Peak Pulse Current - I PP (A)
Peak Pulse Current - I PP (A)
Positive Transmission Line Pulsing (TLP) Plot (Pin 2, 3, 4
to GND )
Negative Transmission Line Pulsing (TLP) Plot (Pin 2, 3,
4 to GND )
0
16
-2
14
-4
TLP Current (A)
12
TLP Current (A)
2.0
10
8
6
4
-6
-8
-10
-12
-14
2
-16
0
-6
0
2
4
6
8
10
12
-5
-4
-3
-2
-1
0
TLP Volts (V)
TLP Volts (V)
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/06/19
TVS Diode Array (SPA® Diodes)
Low Capacitance ESD and Surge Protection - SP1255P Series
Soldering Parameters
Pb – Free assembly
Pre Heat
- Temperature Min (Ts(min))
150°C
- Temperature Max (Ts(max))
200°C
- Time (min to max) (ts)
60 – 180 secs
Average ramp up rate (Liquidus) Temp (TL) to peak 3°C/second max
3°C/second max
TS(max) to TL - Ramp-up Rate
Reflow
- Temperature (TL) (Liquidus)
217°C
- Temperature (tL)
60 – 150 seconds
Peak Temperature (TP)
260
Time within 5°C of actual peak Temperature (tp)
20 – 40 seconds
Ramp-down Rate
6°C/second max
Time 25°C to peak Temperature (TP)
8 minutes Max.
Do not exceed
260°C
+0/-5
tP
TP
°C
Part Numbering System
Temperature
Reflow Condition
Critical Zone
TL to TP
Ramp-up
TL
TS(max)
tL
Ramp-do
Ramp-down
Preheat
TS(min)
25
tS
time to peak temperature
Time
Product Characteristics
SP 1255P U T G
TVS Diode Arrays
(SPA®Diodes)
G= Green
T= Tape & Reel
Series
Package
U=µDFN-6
Part Marking System
Lead Plating
Pre-Plated Frame
Lead Material
Copper Alloy
Lead Coplanarity
0.0004 inches (0.102mm)
Substrate material
Silicon
Body Material
Molded Epoxy
Flammability
UL 94 V-0
Notes :
1. All dimensions are in millimeters
2. Dimensions include solder plating.
3. Dimensions are exclusive of mold flash & metal burr.
4. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form.
5. Package surface matte finish VDI 11-13.
A G3
Number of
Channels
Assembly Site
Product Series
A = SP1255P
Ordering Information
Part Number
Package
Marking
Min. Order Qty.
Packaging Option
P0/P1
SP1255PUTG
µDFN-6
AG3
3000
Tape & Reel – 8mm tape/7” reel
2mm/4mm
Packaging Specification
EIA RS-481
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/06/19
TVS Diode Array (SPA® Diodes)
Low Capacitance ESD and Surge Protection - SP1255P Series
Package Dimensions — µDFN-6 (1.8x2.0x0.55mm)
Top View
µDFN6 (1.8x2.0x0.55mm)
JEDEC MO-229
Symbol
J
N
Side View
Nom
Max
Min
Nom
Max
A
0.50
0.55
0.60
0.020
0.022
0.024
A1
0.00
-
0.05
0.000
-
0.002
G
P
Y
Z
X
Recommended
Soldering
Footprint
Bottom View
0.15 Ref
A3
F
Inches
Min
B
C
Millimeters
0.006 Ref
D
1.75
1.80
1.85
0.069
0.071
0.073
E
1.95
2.00
2.05
0.077
0.079
0.081
b
0.15
0.20
0.25
0.006
0.008
0.010
L
0.20
0.30
0.40
0.008
0.012
0.016
D2
0.35
0.45
0.55
0.014
0.018
0.022
E2
0.74
0.84
0.94
0.029
0.033
0.037
e
0.40 BSC
0.016 BSC
e1
0.80 BSC
0.031 BSC
B
0.80 BSC
0.031 BSC
C
0.35
0.45
0.55
0.014
0.018
0.022
F
0.81
0.84
0.87
0.032
0.033
0.034
G
0.82
0.85
0.88
0.032
0.033
0.034
J
0.24
0.25
0.26
0.010
0.010
0.010
N
0.47
0.48
0.49
0.018
0.019
0.020
P
0.24
0.25
0.26
0.010
0.010
0.010
X
0.23
0.24
0.25
0.009
0.009
0.009
Y
0.35
0.36
0.37
0.014
0.014
0.014
Z
0.62
0.64
0.66
0.024
0.025
0.026
Notes:
1. Dimension and tolerancing comform to ASME Y14.5M-1994.
2. Controlling dimensions: Millimeter. Converted Inch dimensions are not necessarily exact.
D0
E
ø13.22
P2
ø155.37
P0
ø70.55
P1
ø179.90
22.12
Embossed Carrier Tape & Reel Specification — µDFN-6
F
W
1.46
D1
24.32
1.11
9.04
5
A0
B0
5
ø58.11
K0
ø15.57
T
Symbol
Millimeters
A0
1.95 +/- 0.05
B0
2.30 +/- 0.05
D0
1.50 + 0.10
D1
Ø 0.60 + 0.05
E
1.75 +/- 0.10
F
3.50 +/- 0.05
K0
0.75 +/- 0.05
P0
2.00 +/- 0.05
P1
4.00 +/- 0.10
P2
4.00 +/- 0.10
T
0.25 +/- 0.02
W
8.00 + 0.30 /- 0.10
Pin1 Location
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are
not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at http://www.littelfuse.com/disclaimer-electronics.
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/06/19
