SP24-01WTG-C-HV

TVS Diode Arrays (SPA® Diodes) Diodes) General Purpose ESD Protection - SPxx-01WTG-C-HV Series SPxx Series 100W Discrete Bidirectional TVS Diode RoHS Pb GREEN Description The SPxx-01WTG-C-HV series is designed to replace multilayer varistors (MLVs) in portable applications, LED lighting modules, and low speed I/Os. It will protect sensitive equipment from damage due to electrostatic discharge (ESD) and other overvoltage transients. The SPxx-01WTG-C-HV series can safely absorb repetitive ESD strikes above the maximum level of the IEC 610004-2 international standard (Level 4,  ±8kV contact discharge)  without performance degradation and safely dissipate up to 8A (SP12-01WTG-C-HV) of induced surge current (IEC 61000-4-5, tP=8/20μs) with very low clamping voltages. Features Pinout • Low clamping voltage • ESD, IEC 61000-4-2, ±30kV contact, ±30kV air 1 • EFT, IEC 61000-4-4, 40A (5/50ns) • Halogen free, Lead free and RoHS compliant • IEC 61000-4-5, 2nd Edition: 8/20 Surge, 8A Surge Immunity. SP1201WTG-C-HV. 2 Applications Functional Block Diagram 1 • Low leakage current 2 • LED Lighting Modules • Mobile & Handhelds • Portable Instrumentation • RS232 / RS485 • General Purpose I/O • CAN bus Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. Additional Information Datasheet © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 05/02/17 Resources Samples TVS Diode Arrays (SPA® Diodes) Diodes) General Purpose ESD Protection - SPxx-01WTG-C-HV Series Absolute Maximum Ratings Symbol Parameter Value Units Ppk Peak Pulse Power (tp=8/20μs) 100 W TOP Operating Temperature -40 to 125 °C TSTOR Storage Temperature -55 to 150 °C Notes: CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Thermal Information Rating Units Maximum Junction Temperature Parameter 150 °C Maximum Lead Temperature (Soldering 20-40s) 260 °C SP12-01WTG-C-HV Electrical Characteristics (TOP=25ºC) Parameter Symbol Test Conditions VRWM IR≤1μA, 1 pin to GND Reverse Breakdown Voltage VBR IR=1mA, 1 pin to GND Leakage Current ILEAK Reverse Standoff Voltage Clamp Voltage1 Peak Pulse Current ESD Withstand Voltage1 Diode Capacitance Max Units 12.0 V 13.3 V VR=12V, 1 pin to GND 0.1 μA 16 V IPP=8A, tP=8/20μs, Fwd 19 V RDYN TLP, tp=100ns, 1 pin to GND 0.4 Ω Ipp tp=8/20µs VESD CD-GND 1 Typ IPP=1A, tp=8/20µs, Fwd VC Dynamic Resistance2 Min 8.0 A IEC61000-4-2 (Contact Discharge) ±30 kV IEC61000-4-2 (Air Discharge) ±30 kV Reverse Bias=0V, f=1MHz 26 30 pF Note: 1 2 Parameter is guaranteed by design and/or component characterization. Transmission Line Pulse (TLP) test setting : Std.TDR(50Ω),tp=100ns, tr=0.2ns ITLP and VTLP averaging window: start t1=70ns to end t2=80ns SP15-01WTG-C-HV Electrical Characteristics (TOP=25ºC) Parameter Symbol Test Conditions VRWM IR≤1μA, 1 pin to GND Reverse Breakdown Voltage VBR IR=1mA, 1 pin to GND Leakage Current ILEAK VR=15V, 1 pin to GND Reverse Standoff Voltage Dynamic Resistance 2 Peak Pulse Current ESD Withstand Voltage1 Diode Capacitance 1 Typ Max Units 15.0 V 0.1 μA 16.7 V IPP=1A, tp=8/20µs, Fwd 21 V IPP=5A, tp=8/20µs, Fwd 27 V RDYN TLP, tp=100ns, 1 pin to GND 0.43 Ipp tp=8/20µs VC Clamp Voltage1 Min VESD CI/O-GND Ω 5.0 A IEC61000-4-2 (Contact Discharge) ±30 kV IEC61000-4-2 (Air Discharge) ±30 kV Reverse Bias=0V, f=1MHz 21 24 pF Note: 1 2 Parameter is guaranteed by design and/or component characterization. Transmission Line Pulse (TLP) test setting : Std.TDR(50Ω),tp=100ns, tr=0.2ns ITLP and VTLP averaging window: start t1=70ns to end t2=80ns © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 05/02/17 TVS Diode Arrays (SPA® Diodes) Diodes) General Purpose ESD Protection - SPxx-01WTG-C-HV Series SP24-01WTG-C-HV Electrical Characteristics (TOP=25ºC) Parameter Reverse Standoff Voltage Symbol Test Conditions Min VRWM IR≤1μA, 1 pin to GND Reverse Breakdown Voltage VBR IR=1mA, 1 pin to GND Leakage Current ILEAK VR=24V, 1 pin to GND VC Clamp Voltage1 Dynamic Resistance RDYN 2 Peak Pulse Current Ipp ESD Withstand Voltage1 Diode Capacitance1 VESD CI/O-GND Typ Max Units 24.0 V 26.7 V 0.1 μA IPP=1A, tp=8/20µs, Fwd 32 V IPP=3.0A, tp=8/20µs, Fwd 40 V TLP, tp=100ns, 1 pin to GND 0.7 Ω tp=8/20µs 3.0 A IEC61000-4-2 (Contact Discharge) ±18 kV IEC61000-4-2 (Air Discharge) ±24 kV Reverse Bias=0V, f=1MHz 13 17 pF Note: 1 2 Parameter is guaranteed by design and/or component characterization. Transmission Line Pulse (TLP) test setting : Std.TDR(50Ω),tp=100ns, tr=0.2ns ITLP and VTLP averaging window: start t1=70ns to end t2=80ns SP36-01WTG-C-HV Electrical Characteristics (TOP=25ºC) Parameter Symbol Test Conditions VRWM IR≤1μA, 1 pin to GND Reverse Breakdown Voltage VBR IR=1mA, 1 pin to GND Leakage Current ILEAK VR=36V, 1 pin to GND VC IPP=1A, tp=8/20µs, Fwd 48 RDYN TLP, tp=100ns, 1 pin to GND 1.4 Ipp tp=8/20µs Reverse Standoff Voltage Clamp Voltage1 Dynamic Resistance 2 Peak Pulse Current ESD Withstand Voltage1 Diode Capacitance 1 VESD CI/O-GND Min Typ Max 36.0 Units V 40.0 V 0.1 μA V Ω 1.5 A IEC61000-4-2 (Contact Discharge) ±10 kV IEC61000-4-2 (Air Discharge) ±15 kV Reverse Bias=0V, f=1MHz 10 13 pF Note: 1 2 Parameter is guaranteed by design and/or component characterization. Transmission Line Pulse (TLP) test setting : Std.TDR(50Ω),tp=100ns, tr=0.2ns ITLP and VTLP averaging window: start t1=70ns to end t2=80ns Power Derating Curve 110 100 % of Rated Power I PP 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 Ambient Temperature - T A (oC) © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 05/02/17 125 150 TVS Diode Arrays (SPA® Diodes) Diodes) General Purpose ESD Protection - SPxx-01WTG-C-HV Series SP15-01WTG-C-HV Transmission Line Pulsing(TLP) Plot 20 20 18 18 16 16 14 14 TLP Current (A) TLP Current (A) SP12-01WTG-C-HV Transmission Line Pulsing(TLP) Plot 12 10 8 6 10 8 6 4 4 2 2 0 0 10 20 30 TLP Volts (V) 40 0 50 SP24-01WTG-C-HV Transmission Line Pulsing(TLP) Plot 0 10 20 30 40 TLP Volts (V) 50 60 SP36-01WTG-C-HV Transmission Line Pulsing(TLP) Plot 20 14 18 12 16 14 TLP Current (A) TLP Current (A) 12 12 10 8 6 4 10 8 6 4 2 2 0 0 0 10 20 30 40 50 TLP Volts (V) 60 70 80 0 20 40 60 80 100 120 TLP Volts (V) Pulse Waveform 110% 100% 90% Percent of IPP 80% 70% 60% 50% 40% 30% 20% 10% 0% 0.0 5.0 10.0 15.0 20.0 25.0 30.0 Time (μs) © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 05/02/17 TVS Diode Arrays (SPA® Diodes) Diodes) General Purpose ESD Protection - SPxx-01WTG-C-HV Series Soldering Parameters Pb – Free assembly Pre Heat - Temperature Min (Ts(min)) 150°C - Temperature Max (Ts(max)) 200°C - Time (min to max) (ts) 60 – 180 secs Average ramp up rate (Liquidus) Temp (TL) to peak 3°C/second max TS(max) to TL - Ramp-up Rate 3°C/second max Reflow - Temperature (TL) (Liquidus) 217°C - Temperature (tL) 60 – 150 seconds 260 Time within 5°C of actual peak Temperature (tp) 20 – 40 seconds Ramp-down Rate 6°C/second max Time 25°C to peak Temperature (TP) 8 minutes Max. Do not exceed 260°C Critical Zone TL to TP Ramp-up TL TS(max) tL Ramp-do Ramp-down Preheat TS(min) 25 Peak Temperature (TP) +0/-5 tP TP Temperature Reflow Condition tS time to peak temperature Time °C Product Characteristics Ordering Information Part Number Package Marking Min. Order Qty. SP12-01WTG-C-HV FLIPCHIP 2 10000 SP15-01WTG-C-HV FLIPCHIP 5 10000 Molded Epoxy SP24-01WTG-C-HV FLIPCHIP 4 10000 UL 94 V-0 SP36-01WTG-C-HV FLIPCHIP 6 10000 Lead Plating Pre-Plated Frame Lead Material Copper Alloy Lead Coplanarity 0.0004 inches (0.102mm) Substitute Material Silicon Body Material Flammability Notes : 1. All dimensions are in millimeters 2. Dimensions include solder plating. 3. Dimensions are exclusive of mold flash & metal burr. 4. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form. 5. Package surface matte finish VDI 11-13. Part Marking System Part Numbering System SP** -01 W T G – C – HV 2 TVS Diode Arrays (SPA® Diodes ) 2: SP12-01WTG-C-HV 5: SP15-01WTG-C-HV 4: SP24-01WTG-C-HV 6: SP36-01WTG-C-HV Voltage Number of Channels Package W:Flipchip © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 05/02/17 High Voltage Bidirectional G= Green T= Tape & Reel TVS Diode Arrays (SPA® Diodes) Diodes) General Purpose ESD Protection - SPxx-01WTG-C-HV Series Package Dimensions — FLIPCHIP Symbol Package FLIPCHIP JEDEC MO-236 Millimeters Inches Min Typ Max Min Typ Max A 0.273 0.301 0.329 0.011 0.012 0.013 A1 0.008 0.011 0.014 0.000 0.000 0.001 A2 0.265 0.290 0.315 0.011 0.012 D 0.605 0.640 0.655 0.024 0.026 D1 0.145 0.15 0.155 0.006 0.400 REF D2 0.013 0.027 0.006 0.006 0.016 REF E1 0.245 0.25 0.255 0.010 0.010 0.010 E 0.305 0.340 0.355 0.012 0.014 0.015 Embossed Carrier Tape & Reel Specification — FLIPCHIP P1 P0 D P2 E F W D1 T A0 K0 B0 Symbol Millimeters A0 0.41+/-0.03 B0 0.70+/-0.03 D ø 1.50 + 0.10 D1 ø 0.20 +/- 0.05 E 1.75+/-0.10 F 3.50+/-0.05 K0 0.38+/-0.03 P0 4.00+/-0.10 P1 2.00+/-0.05 P2 2.00+/-0.05 W 8.00 + 0.30/ -0.10 T 0.23+/-0.02 © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 05/02/17