SP3022-01ETG

TVS Diode Arrays (SPA® Diodes) Low Capacitance ESD Protection - SP3022 Series SP3022 Series 0.35pF 20kV Bidirectional Discrete TVS RoHS Pb GREEN Description The SP3022 includes back-to-back TVS diodes fabricated in a proprietary silicon avalanche technology to provide protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes above the maximum level specified the maximum level specified in the international standard IEC 61000-4-2, without performance without performance degradation. The back-to-back configuration provides symmetrical ESD protection for data lines when AC signals are present and the low loading capacitance makes it ideal for protecting high speed data lines such as HDMI,USB2.0, USB3.0 and eSATA. Features Pinout • R  oHS compliant and lead- • Low capacitance of 0.35pF @ VR=0V (TYP) free 0201 Flipchip 1 2 SOD882 1 • E  SD protection of ±20kV contact discharge, ±30kV air discharge, (IEC 61000-4-2) • L  ow leakage current of 100nA at 5.3V (MAX) • EFT, IEC 61000-4-4, 40A (5/50ns) • Extremely low dynamic resistance (0.7Ω TYP) • Space efficient 0201 and SOD882 footprint • IEC 61000-4-5, 2nd Edition: • AEC-Q101 qualified 8/20 Surge, 3A Surge (SOD882 package) 2 (AEC-Q101 qualified) Functional Block Diagram 1 Applications 2 • USB 3.0/USB 2.0/MHL • Smart Phones • MIPI Camera and Display • External Storage • HDMI 2.0, DisplayPort 1.3, eSATA • Ultrabooks, Notebooks • Set Top Boxes, Game Consoles • Automotive Electronics • Tablets, eReaders Additional Information Datasheet Resources Samples Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/12/19 TVS Diode Arrays (SPA® Diodes) Low Capacitance ESD Protection - SP3022 Series Symbol Parameter Value Units PPK Peak Pulse Power (tP=8/20µs) 20 W IPP Peak Current (tp=8/20μs) 3.0 A TOP Operating Temperature -40 to 125 °C CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the component. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (TOP=25ºC) Parameter Symbol Reverse Standoff Voltage Test Conditions Min Typ VRWM Reverse Breakdown Voltage VBR 1R=1mA Reverse Leakage Current ILEAK VR=5.3V Clamp Voltage1 6.8 VC IPP=1A, tp=8/20µs, Fwd Dynamic Resistance2 RDYN TLP, tp=100ns, I/O to GND ESD Withstand Voltage1 VESD Diode Capacitance1 Units 5.3 V 7.8 9.0 V