SP3022-01WTG

TVS Diode Array Datasheet SP3022 Series 0.35pF 20kV Bidirectional Discrete TVS RoHS Pb GREEN Description The SP3022 includes back-to-back TVS diodes fabricated in a proprietary silicon avalanche technology to provide protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes above the maximum level specified in the international standard IEC 61000-4-2, without performance degradation. The back-to-back configuration provides symmetrical ESD protection for data lines when AC signals are present and the low loading capacitance makes it ideal for protecting high speed data lines such as HDMI,USB2.0, USB3.0 and eSATA. Features & Benefits Additional Information ■ Lead-Free and RoHSCompliant ■ Low capacitance of 0.35pF @ VR=0V (TYP) ■ ESD, IEC 61000-4-2, ±20kV contact discharge, ±30kV air discharge ■ Low leakage current of 100nA at 5.3V (MAX) ■ EFT, IEC 61000-4-4, 40A (5/50ns) ■ Lightning, 3A (8/20μs per IEC 61000-4-5 2nd Edition) Resources Accessories Samples ■ Extremely low dynamic resistance (0.7Ω TYP) ■ AEC-Q101 qualified Applications Pinout SOD882 1 ■ Space efficient SOD882 footprint 2 ■ USB 3.0/USB 2.0/MHL ■ External Storage ■ MIPI Camera and Display ■ Ultrabooks, Notebooks ■ HDMI 2.0, DisplayPort 1.3, eSATA ■ Tablets, eReaders ■ Set Top Boxes, Game Consoles (AEC-Q101 qualified) ■ Automotive Electronics ■ Smart Phones Functional Block Diagram 1 2 Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 1 © 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 04/14/21 TVS Diode Array Datasheet SP3022 Series 0.35pF 20kV Bidirectional Discrete TVS Symbol Parameter Value Units PPK Peak Pulse Power (tP=8/20µs) 20 W IPP Peak Current (tp=8/20μs) 3.0 A TOP Operating Temperature -40 to 125 °C Caution: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the component. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (TOP=25ºC) Parameter Symbol Test Conditions VRWM IR=1μA Reverse Standoff Voltage Breakdown Voltage VBR IR=1mA Reverse Leakage Current ILEAK VR=5.3V Clamp Voltage1 VC IPP=1A, tp=8/20µs, Fwd RDYN TLP, tp=100ns, I/O to GND ESD Withstand Voltage1 VESD CI/O-I/O Typ 6.8 Dynamic Resistance2 Diode Capacitance1 Min Max Units 5.3 V 7.8 9.1 V