T10B230

T10B series Sibod™ FEATURES Ø1.016±0.050 ● Glass passivated junction ● UL recognized ● High current diverting capability 250A ● Automatic reset ● Low capacitance, less than 200pF ● Does not degrade APPLICATION ● Bi-directional device for telephone and line card protection 25.4 min ELECTRICAL CHARACTERISTICS (Tamb = +25°C) SYMBOL +0.127 Ø5.080 -0.254 PARAMETER VRM Stand-off Voltage VBR Breakdown Voltage IH VR Holding Current +0.127 9.400 -0.254 Continuous Reverse Voltage ABSOLUTE RATINGS (limiting values) (Tj = + 25°C) L = 10mm SYMBOL PARAMETER VALUE UNIT Power dissipation on infinite heatsink Tamb = 50°C 5 W Ipp Peak Pulse Current 10x1000µsec 10/700 1.5KV 8-20 us expo 100 125 250 A Itsm Non-repetitive surge peak on-state current tp = 20 ms 50 A di/dt Critical rate of rise of on-state current Non repetitive 100 A/us T stg Tj Storage and operating junction Temperature range Maximum lead temperature for soldering during 10s at 4mm from case -40 to 150 150 °C °C 230 °C P TI 25.4 min All dimensions in mm THERMAL RESISTANCES SYMBOL Rth(j-i) Rth(j-a) PARAMETER VALUE UNIT 20 75 °C/W °C/W L = 10mm Junction-leads on infinite heatsink Junction-ambient on printed circuit All parameters are tested using Fet Test ™ Model 3600 DEVICE TYPE IRM @ VRM max IR @ VR max VBO @ IBO IH C max min typ ORDERING INFORMATION µA V µA V V mA T10B035 2 32 50 35 55 800 mA 150 pF 180 T10B065 2 55 50 65 80 800 150 160 Voltage 140 Holding Current Option T10B120 2 110 50 120 160 800 150 T10B140 2 120 50 140 200 800 150 140 T10B200 2 170 50 200 265 800 150 130 T10B230 2 200 50 230 300 800 150 120 T10B270 2 230 50 270 350 800 150 120 w w w. l i t t e l f u s e . c o m T10B Packaging Option B = Bulk (500 pcs) T = Tape and reeled (1500 pcs) 55