TVB200SC-L

PRODUCT: TVB200SC-L SiBar™ 308 Constitution Drive Menlo Park, CA 94025-1164 Phone: 800-227-4856 www.circuitprotection.com Thyristor Surge Protectors DOCUMENT: SCD 25899 PCN: 619342 REV LETTER: C REV DATE: APRIL 28, 2007 PAGE NO.: 1 OF 2 Specification Status: RELEASED PHYSICAL DESCRIPTION Marking: 200C Date Code Device Code Raychem Logo A B MIN MAX MIN MAX mm: 4.06 4.57 3.30 3.81 in*: (0.160) (0.180) (0.130) (0.150) C MIN 1.90 (0.075) D** H J K MAX MIN MAX MIN MAX MIN MAX MIN MAX 2.41 1.96 2.11 0.051 0.152 0.15 0.30 0.76 1.27 (0.095) (0.077) (0.083) (0.002) (0.006) (0.006) (0.012) (0.030) (0.050) P S REF MIN MAX mm: 0.51 5.21 5.59 in*: (0.020) (0.205) (0.220) * Rounded off approximation ** D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P Other Physical Characteristics Form Factor: Lead Material: Encapsulation Material: Solderability: Solder Heat Withstand: Solvent Resistance: Mechanical Shock: Vibration: SMB (Surface Mount, JEDEC DO-214AA Package) Matte Tin Finish Epoxy, meets UL94 V-0 requirements per MIL-STD-750, Method 2026 per MIL-STD-750, Method 2031 per MIL-STD-750, Method 1022 per MIL-STD-750, Method 2016 per MIL-STD-750, Method 2056 Tape and Reel packaging per EIA 481-1 OBSOLETE Agency Recognition: Precedence: CAUTION: UL This specification takes precedence over documents referenced herein. Operation beyond the rated voltage or current may result in rupture, electrical arcing or flame. Materials Information RoHS Compliant ELV Compliant © 2006, 2007 Tyco Electronics Corporation. All rights reserved. NOT the LATEST REVISION PRODUCT: TVB200SC-L SiBar™ 308 Constitution Drive Menlo Park, CA 94025-1164 Phone: 800-227-4856 www.circuitprotection.com Thyristor Surge Protectors DEVICE RATINGS @ 25º C (Both Polarities) Parameter Repetitive Off-State Voltage, Maximum at ID = 5 µA Non-Repetitive Peak Telcordia GR-1089 CORE 10x1000 µs Impulse Current TIA-968 lightning Type A Metallic 10/560 µs Double exponential TIA-968 lightning Type A Longit. 10/160 µs Waveform Telcordia GR-1089 Intrabuilding 2/10 µs (Notes 1 and 2) IEC61000-4-5 (Voc 1.2/50us) 8/20 µs ITU-T K.20/K.21 (Voc 10/700us) 5/310 µs TIA-968 lightning Type B (Voc 9/720us) 5/320 µs Critical Rate of Rise of On-State Current Powered Pulse Amplifier, C=30µF, V=600V Maximum 2x10 µsec waveform, VOC=2.5kV, ISC=500A peak DEVICE THERMAL RATINGS Storage Temperature Range Operating Temperature Range Blocking or conducting state Overload Junction Temperature Maximum; Conducting state only Maximum Lead Temperature for Soldering Purpose; for 10 seconds Symbol VDM IPP1 IPP2 IPP3 IPP4 IPP5 IPP6 IPP7 di/dt di/dt Note 2. Measured under pulse conditions to reduce heating VOLTAGE-CURRENT CHARACTERISTIC Value 200 100 150 200 500 400 150 150 500 330 Units V A A A A A A A A/µs A/µs TSTG -55 to 150 ºC TA -40 to 125 ºC TJ +150 ºC TL +260 ºC ELECTRICAL CHARACTERISTICS Both polarities (TJ @ 25ºC unless otherwise noted) Characteristics Symbol Min Breakover Voltage (+25°C) VBO ---(dv/dt = 0.4kV/µs, Isc=900mA ,Vdc = 500V (both polarities)) Breakover Voltage Temperature Coefficient dVBO/dTJ ---Off-State Current (VD1=50V) ID1 ---(VD2=VDM) ID2=IDM ---On-State Voltage (IT=1A) VT ---(PW ≤ 300 µsec, Duty Cycle ≤ 2% (Note 2)) Breakover Current IBO ---Holding Current (Note 2) IH 150 Peak Onstage Surge Current ITSM 60 (Measured @ 60Hz, 1 cycle, 600V) Critical Rate of Rise of Off-State Voltage dv/dt 2000 (Linear waveform, VD = 0.8 X Rated VBO, T= +25ºC) Capacitance (f=1.0 Mhz, 50Vdc bias, 1Vrms) C1 ---(f=1.0 Mhz, 2Vdc bias,1Vrms) C2 ---Note 1. Allow cooling before test second polarity DOCUMENT: SCD 25899 PCN: 619342 REV LETTER: C REV DATE: APRIL 28, 2007 PAGE NO.: 2 OF 2 Typ 260 Max 320 Units V 0.1 --------- ----2.0 5.0 %/ºC µA µA ----- 4.0 V -------- 800 ---- mA mA ---- ---- A ---- ---- V/µs 55 115 ------- pF pF