TVB270SB-L

SiBar Thyristor Surge Protectors TVBxxxSB-L Series Circuit Protection's SiBar thyristor surge protection devices are designed to help protect sensitive telecommunication equipment from the hazards caused by lightning, power contact, and power induction. These devices have a high electrical surge capability to help protect against transient faults and a high off-state impedance, rendering them virtually transparent during normal system operation. SiBar thyristor surge protectors are designed to assist telecommunication and computer telephony equipment in meeting the applicable requirements and industry specifications. Benefits: Features: • RoHS compliant • Helps provide protection for sensitive telecom electronic equipment • Low leakage current • Bidirectional crowbar transient voltage protection • Broad voltage range 200V – 300V • High off-state impedance • Low power dissipation • Low on-state voltage • Fast, reliable operation • High surge capability • No wear-out mechanisms • Short-circuit failure mode • Helps designers meet worldwide telecom standards • Helps reduce warranty and service costs • Easy installation • Surface-mount technology • DO-214AA SMB package • 10 x 1000 μs 75A and 80A surge rating • Helps improve power efficiency of equipment • Helps equipment comply with TIA-968, Telcordia GR-1089, IEC61000-4-5, ITU K.20/21/45 Applications: • Modems • Set top boxes • Fax machines • POS systems • Phones, answering machines • Analog and digital linecards (xDSL , T1/E1...) • PBX systems • Other customer premise and central office network equipment requiring protection Document: SCD 27171 SiBar Thyristor Surge Protectors © 2007, 2009 Tyco Electronics Corporation. All rights Reserved. Status: Released 1 Rev: C Date: APRIL 2, 2009 SiBar Thyristor Surge Protectors TVBxxxSB-L Series Table SB1 - Electrical Characteristics Part Number VDM Max. (V) VBO Max. (V) IH Min. (mA) VT Max. (V) C1 (Typ) @50VDC Bias (pF) C2 (Typ) @2VDC Bias (pF) TVB200SB-L 200 320 150 4 30 49 Off-State Current @VDM (μA) 5 TVB270SB-L 275 350 150 4 25 50 5 TVB300SB-L 300 400 150 4 21 42 5 Notes: All electrical characteristics are measured at 25°C. VDM measured per UL497B pulse requirements: at max. off-state leakage current (IDM) = 5 µA. VBO measured at 100V/µs. Table SB2 – Surge Current Rating TIA-968 Type A Part Number TVBxxxSB-L Ipp(A) 5 x 320 µs Telcordia GR-1089* IEC61000-4-5 Ipp (A) Ipp (A) 10 x 1000 µs 2 x 10 µs Ipp (A) 8 x 20 µs ITU K.20/21/45* Type B Ipp(A) pp (A) 10 x 560 µs 10 x 160 µs 100 100 150 80 250 250 ITSM IPP (A) di/dt dV/dt 5 x 310 μs Min. (A/µs) (V/µs) (VOC: 10 x 700μs) (A) 100 30 500 2000 Notes: *Lightning current wave forms for applicable industry specification. ITSM, peak on-state surge current is measured at 60 Hz, one cycle. di/dt: critical rate-of-rise of on-state current (pulsed power amplifier Vmax = 600V; C = 30µF). dV/dt: critical rate-of-rise of off-stage voltage (linear wave form, VD = rated VBO, Tj = 25°C) Document: SCD 27171 SiBar Thyristor Surge Protectors © 2007, 2009 Tyco Electronics Corporation. All rights Reserved. Status: Released 2 Rev: C Date: APRIL 2, 2009 SiBar Thyristor Surge Protectors TVBxxxSB-L Series Table SB3 – Dimensions in Millimeters A Dimension TVBxxxSB-L B TVBxxxSB-L D* Min. Max. Min. Max. Min. Max. Min. Max. 4.06 4.57 3.30 3.94 1.90 2.41 1.95 2.20 (0.160) (0.180) (0.130) (0.155) (0.075) (0.095) (0.077) (0.087) H Dimension C J K P S Min. 0.051 Max. 0.200 Min. 0.150 Max. 0.31 Min. 0.76 Max. 1.27 Ref. 0.51 Min. 5.21 Max. 5.59 (0.002) (0.008) (0.006) (0.012) (0.030) (0.050) (0.020) (0.205) (0.220) Notes: *D dimension is measured within dimension P. TVB series devices use industry standard SMB package type. All devices are bidirectional and may be oriented in either direction for installation Table SB4 – Physical Characteristics and Environmental Specifications Lead material Matte tin finish (-L devices) Encapsulating material Epoxy, meets UL94V-0 requirements Solderability per MIL-STD-750, Method 2026 Solder heat withstand per MIL-STD-750, Method 2031 Solvent resistance per MIL-STD-750, Method 1022 Mechanical shock per MIL-STD-750, Method 2016 Vibration per MIL-STD-750, Method 2056 Storage temperature (°C) -55 to 150 Operating temperature (°C) -40 to 125 Junction temperature (°C) 150 Maximum Lead Temperature for Soldering Purpose; for 10s (°C) 260 Table SB5 – Reliability Tests Test High temperature, reverse bias Conditions +100°C, 50VDC bias Duration 1000 hours High humidity, high temperature, reverse bias 85% RH, +85°C, 50VDC bias 1000 hours High temperature storage life +150°C 1000 hours Temperature cycling -65°C to +150°C, 15 minute dwell 1000 cycles Autoclave 100% RH, +121°C, 15 PSI 96 hours Document: SCD 27171 SiBar Thyristor Surge Protectors © 2007, 2009 Tyco Electronics Corporation. All rights Reserved. Status: Released 3 Rev: C Date: APRIL 2, 2009 SiBar Thyristor Surge Protectors TVBxxxSB-L Series Document: SCD 27171 SiBar Thyristor Surge Protectors © 2007, 2009 Tyco Electronics Corporation. All rights Reserved. Status: Released 4 Rev: C Date: APRIL 2, 2009 SiBar Thyristor Surge Protectors TVBxxxSB-L Series Table SB6 – Packaging and Marking Information Recommended Pad Layout (millimeters/inchs) Part Description TVB200SB-L Tape and Reel Quantity 2,500 Standard Package 10,000 Part Marking 200B Dimension A (Nom.) 2.261 (0.089) Dimension B (Nom.) 2.159(0.085) Dimension C (Nom.) 2.743(0.108) Agency Recognition* UL TVB270SB-L 2,500 10,000 270B 2.261 (0.089) 2.159(0.085) 2.743(0.108) UL TVB300SB-L 2,500 10,000 300B 2.261 (0.089) 2.159(0.085) 2.743(0.108) UL *UL497B, File # E179610 308 Constitution Drive, MS R21/2A Menlo Park, CA USA 94025-1164 Tel (800) 227-7040 (650) 361-6900 Fax (650) 361-2508 www.circuitproection.com www.circuitprotection.com.hk (Chinese) www.circuitprotection.jp (Japanese) Raychem, PolySwitch, SiBar, TE Logo and Tyco Electronics are trademarks. All other trademarks and copyrights are property of their respective owners. Document: SCD 27171 SiBar Thyristor Surge Protectors © 2007, 2009 Tyco Electronics Corporation. All rights Reserved. Status: Released 5 Rev: C Date: APRIL 2, 2009