V18MLN41206WH

Metal-Oxide Varistors (MOVs) Surface Mount Multilayer Varistors (MLVs) > MLN Series MLN SurgeArrayTM Suppressor RoHS Description The MLN SurgeArray™ Suppressor is designed to help protect components from transient voltages that exist at the circuit board level. This device provides four independent suppressors in a single leadless chip in order to reduce part count and placement time as well as save space on printed circuit boards. SurgeArray™ Suppressor are intended to suppress ESD, EFT and other transients in order to protect integrated circuits or other sensitive components operating at any voltage up to 18VDC. SurgeArray™ Suppressor are rated to the IEC 61000-4-2 human body model ESD to help products attain EMC compliance. The array offers excellent isolation and low crosstalk between sections. Size Table Metric EIA 3216 1206 The inherent capacitance of the SurgeArray™ Suppressor permits it to function as a filter/suppressor, thereby replacing separate Zener/capacitor combinations. Absolute Maximum Ratings Continuous MLN Series Units The MLN array is manufactured using the Littelfuse Multilayer technology process and is similar to the Littelfuse ML and MLE Series of discrete leadless chips. Steady State Applied Voltage: DC Voltage Range (VM(DC)) 5.5 - 18 V Operating Ambient Temperature Range (TA) -40 to +125 ºC Storage Temperature Range (TSTG) -40 to +150 ºC For ratings of individual members of a series, see device ratings and specifications table. Additional Information Datasheet Resources Samples Features • RoHS Compliant • Low leakage • Four individual devices in one chip • Operating voltage up to 18VM(DC) • ESD rated to IEC 61000-4-2 (Level 4) • -40ºC to 125ºC operating temp range • AC characterized for impedance and capacitance • Low-profile, PCMCIA compatible • Low adjacent channel crosstalk, -55dB at 10MHz (Typ) Applications • Data, Diagnostic I/O Ports Communications/ Cellular Phones • Analog Signal/ Sensor Lines • Computer/DSP Products • Portable/HandHeld Products • Industrial Instruments Including Medical • Mobile © 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/24/20 Metal-Oxide Varistors (MOVs) Surface Mount Multilayer Varistors (MLVs) > MLN Series Device Ratings and Specifications Any Single Section Maximum Ratings (125ºC) Specifications (25ºC) Maximum Continuous Working Voltage Maximum Non-repetitive Surge Current (8/20µs) Maximum Non-repetitive Surge Energy (10/1000µs) Maximum Clamping Voltage (at Noted 8/20µs) Current VM(DC) ITM WTM VC (V) (A) (J) (V) (V) (V) V5.5MLN41206 5.5 30 0.10 15.5 at 2A 60 V9MLN41206 9.0 30 0.10 23.0 at 2A Part Number Typical ESD Supression Voltage (Note1) (Note 2) 8kV Contact (Note 3) 15kV Air Peak Clamp Peak Nominal Voltage at 1mA DC Test Current Capacitance at 1 MHz (1V p-p) (Note 4) C VN(DC) Min VN(DC) Max TYP MAX (V) (V) (V) (pF) (pF) 35 45 7.10 10.8 430 520 95 50 75 11.0 16.0 250 300 V14MLN41206 14.0 30 0.10 30.0 at 2A 110 55 85 15.9 20.3 140 175 V18MLN41206 18.0 30 0.10 40.0 at 2A 165 63 100 22.0 28.0 100 125 V18MLN41206L 18.0 30 0.05 50.0 at 1A 200 95 130 25.0 35.0 45 75 NOTES: 1. Tested to IEC61000-4-2 Human Body Model (HBM) discharge test circuit. 2. Direct discharge to device terminals (IEC preffered test method). 3. Corona discharge through air (represents actual ESD event) 4. Capacitance may be customized, contact Sales. 5. The typical capacitance rating is the discrete component test result. Fig. 2 Peak Pulse Current Test Waveform for Clamping Voltage Fig. 1 Peak Current and Energy Derating Curve 100 NORMALIZED VARISTOR VOLTAGE (%) 100 10 0.1mA VALUE 90 70 -40oC 60 25oC 50 85oC 40 125 oC 30 20 10 0 -55 O 1 = Virtual origin of wave t = Time from 10% to 90% t 1 = Virtual front time = 1.25 t 2 = Virtual time to half valu (Impulse duration) 50 10 t O1 50 1mA 60 70 80 10 mA 90 100 CURRENT (A) 110 120 100mA 130 140 150 TIME t1 t2 1mA o AMBIENTVARISTOR TEMPERATURE ( C) FIGURE 7. STANDBY CURRENT AT NORMALIZED VOLTAGE AND TEMPERATURE (ANY SINGLE SECTION) FIGURE 1. PEAK CURRENT AND ENERGY DERATING CURVE 70 For applications exceeding 125ºC ambient temperature, the peak surge current and energy ratings must be reduced. 65 CAPACITANCE (pF) 90 80 PERCENT OF PEAK PERCENT OF RATED VALUE 100 FIGURE Example: 01 = Virtual Origin of Wave T = Time from 10% to 90% of Peak T1 = Rise Time = 1.25 x T T2 = Decay Time (Impulse Duration) 2. PEAK PULSE CURRENT TEST WAVEFORM For an 8/20 µs Current Waveform: 8µs = T1 = Rise Time 20µs = T2 = Virtual Time to Half Value 60 Typical Performance Curves 55 50 Fig. 4 Impedance vs Frequency, 1206 Size Fig. 3 Equivalent Series Resistance 45 40 1MHz 10MHz 1GHz 100MHz FREQUENCY 10000 FIGURE 8. CAPACITANCE vs FREQUENCY 1000 1000 Impeance |Z| (Ω) OHMS 100 10 1 100 V5.5 V9 10 V14 V18 V18L 0.1 1MHz 10MHz 100MHz 1GHz 10GHz 1 Frequency FIGURE 11. CAPACITANCE VS FREQUENCY, 1206 SIZE 0.1 0.1 1 10 100 1000 Frequency (MHz) FIGURE 12. IMPEDANCE vs FREQUENCY, 1206 SIZE © 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/24/20 FO Metal-Oxide Varistors (MOVs) Surface Mount Multilayer Varistors (MLVs) > MLN Series Typical Performance Curves (continued) Fig. 5 Nominal Voltage Stability to IEC 1000-4-2 (8kV Contact Method, One Section) Fig. 6 1206 Size Pulse Rating for Long Duration Surges (Any Single Section) 100 25 V18 NUMBER OF SURGES 1 100 V14 15 2 Surge Current (A) NOMINAL VOLTAGE VNOM (V) 20 V9 10 V5.5 10 103 10 1 5 ∞ 104 105 106 0 0 10 100 1000 10000 0.1 10 100 NUMBER OF DISCHARGES 1000 10000 Square Wave Impulse Duration (µs) FIGURE 6. 0805 SIZE PULSE RATING FOR LONG DURATION SURGES (ANY SINGLE SECTION) FIGURE 3. NOMINAL VOLTAGE STABILITYTO IEC 1000-4-2 (8kV CONTACT METHOD, ONE SECTION) Fig. 7 V-I Characteristic, 1206 size Fig. 8 Capacitance vs Frequency, 1206 Size 500 100 V18L MAXIMUM CLAMP VOLTAGE V5.5 V18 MAXIMUM STANDBY 400 V14 V5.5 Capacitance (pF) Varistor Voltage (V) V9 V18L V18 10 V14 V9 V5.5 300 V9 200 V14 V18 100 V18L 1 10µA 100µA 1mA 10mA 100mA 1A 100A 10A Current (A) 0 0.1 1 10 100 1000 Frequency (MHz) FIGURE 5. V-I CHARACTERISTIC, 1206 SIZE FIGURE 8. CAPACITANCE vs FREQUENCY Fig. 9 Adjacent Channel Crosstalk 0 Crosstalk (dB) -20 -40 -60 V18L V14 V18 V9 -80 V5.5 VIN = 1VRMS Z = 50Ω -100 -120 0.001 0.01 0.1 1 10 100 1000 Frequency (MHz) FIGURE 13. ADJACENT CHANNEL CROSSTALK © 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/24/20 Metal-Oxide Varistors (MOVs) Surface Mount Multilayer Varistors (MLVs) > MLN Series Lead (Pb) Soldering Recommendations When using a reflow process, care should be taken to ensure that the MLN chip is not subjected to a thermal gradient steeper than 4 degrees per second; the ideal gradient being 2 degrees per second. During the soldering process, preheating to within 100 degrees of the solder's peak temperature is essential to minimize thermal shock. Once the soldering process has been completed, it is still necessary to ensure that any further thermal shocks are avoided. One possible cause of thermal shock is hot printed circuit boards being removed from the solder process and subjected to cleaning solvents at room temperature. The boards must be allowed to cool gradually to less than 50ºC before cleaning. MAXIMUM TEMPERATURE 230°C MAXIMUM TEMPERATURE 40-80 230°C 250 200 TEMPERATURE TEMPERATURE °C °C Wave soldering is the most strenuous of the processes. To avoid the possibility of generating stresses due to thermal shock, a preheat stage in the soldering process is recommended, and the peak temperature of the solder process should be rigidly controlled. 250 SECONDS ABOVE 183°C 40-80 SECONDS RAMP RATE ABOVE 183°C MLN Series Tape and Reel Specifications t1 D0 P0 PR ODUCT IDENTIFYING LABEL P2 PLASTIC CARRIER E F K0 TAPE W B0 t2 D1 P1 Symbol A0 Description EMBOSSMENT TOP TAPE 8mm NOMINAL 178mm OR 330mm DIA. REEL Dimensions in Millimeters A0 Width of Cavity Dependent on Chip Size to Minimize Rotation. B0 Length of Cavity Dependent on Chip Size to Minimize Rotation. K0 Depth of Cavity Dependent on Chip Size to Minimize Rotation. W Width of Tape 8 -/+0.2 F Distance Between Drive Hole Centers and Cavity Centers 3.5 -/+0.5 E Distance Between Drive Hole Centers and Tape Edge 1.75 -/+0.1 P1 Distance Between Cavity Center 4 -/+0.1 P2 Axial Distance Between Drive Hole Centers and Cavity Centers 2 -/+0.1 P0 Axial Distance Between Drive Hole Centers 4 -/+0.1 D0 Drive Hole Diameter 1.55 -/+0.05 D1 Diameter of Cavity Piercing 1.05 -/+0.05 T1 Embossed Tape Thickness 0.3 Max T2 Top Tape Thickness 0.1 Max Notes : • Conforms to EIA-481-1, Revision A • Can be supplied to IEC publication 286-3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/24/20