ZEN056V075A48LS

PRODUCT: ZEN056V075A48LS PolyZen Polymer Enhanced Zener Diode Micro-Assemblies DOCUMENT: SCD27365 REV LETTER: E REV DATE: JUNE 22, 2011 PAGE NO : 1 OF 8 Specification Status: Released GENERAL DESCRIPTION TE PolyZen devices are polymer enhanced, precision Zener diode micro-assemblies. They offer resettable protection against multi-Watt fault events without the need for multi-Watt heat sinks. The Zener diode used for voltage clamping in a PolyZen micro-assembly was selected due to its relatively flat voltage vs current response. This helps improve output voltage clamping, even when input voltage is high and diode currents are large. An advanced feature of the PolyZen micro-assembly is that the Zener diode is thermally coupled to a resistively non-linear, polymer PTC (positive temperature coefficient) layer. This PTC layer is fully integrated into the device, and is electrically in series between VIN and the diode clamped VOUT. This advanced PTC layer responds to either extended diode heating or overcurrent events by transitioning from a low to high resistance state, also known as ”tripping”. A tripped PTC will limit current and generate voltage drop. It helps to protect both the Zener diode and the follow on electronics and effectively increases the diode’s power handling capability. The polymer enhanced Zener diode helps protect sensitive portable electronics from damage caused by inductive voltage spikes, voltage transients, incorrect power supplies and reverse bias. These devices are particularly suitable for portable electronics and other low-power DC devices. BENEFITS  Stable Zener diode helps shield downstream electronics from overvoltage and reverse bias  Trip events shut out overvoltage and reverse bias sources  Analog nature of trip events minimizes upstream inductive spikes  Minimal power dissipation requirements  Single component placement FEATURES  Overvoltage transient suppression  Stable VZ vs fault current  Time delayed, overvoltage trip  Time delayed, reverse bias trip  Multi-Watt power handling capability  Integrated device construction  RoHS Compliant TARGET APPLICATIONS  DC power port protection in portable electronics  DC power port protection for systems using barrel jacks for power input  Internal overvoltage & transient suppression  DC output voltage regulation TYPICAL APPLICATION BLOCK DIAGRAM Power Supply PolyZen Protected Electronics (External or Internal) 2 VIN + 1 PolyZen Device GND VOUT 3 Regulated Output RLoad Protected downstream electronics PRODUCT: ZEN056V075A48LS PolyZen Polymer Enhanced Zener Diode Micro-Assemblies DOCUMENT: SCD27365 REV LETTER: E REV DATE: JUNE 22, 2011 PAGE NO : 2 OF 8 CONFIGURATION INFORMATION Pin Configuration (Top View) Pad Dimensions 2 VIN 0.94 mm (0.037”) GND 2.21 mm (0.087”) 1 3 0.33 mm (0.013”) 0.94 mm (0.037”) VOUT 0.56 mm (0.022”) 2.88 mm (0.1135”) 0.56 mm (0.022”) PIN DESCRIPTION Pin Number 1 2 3 Pin Name VIN GND VOUT Pin Function VIN. Protected input to Zener diode. GND VOUT. Zener regulated voltage output BLOCK DIAGRAM Polymer PTC VIN VOUT Zener Diode GND DEFINITION of TERMS IPTC IFLT IOUT Trip Event Trip Endurance Current flowing through the PTC portion of the circuit RMS fault current flowing through the diode Current flowing out the VOUT pin of the device A condition where the PTC transitions to a high resistance state, thereby significantly limiting IPTC and related currents. Time the PTC portion of the device remains in a high resistance state. IPTC, IHOLD IOUT VIN VOUT IFLT GND PRODUCT: ZEN056V075A48LS PolyZen Polymer Enhanced Zener Diode Micro-Assemblies DOCUMENT: SCD27365 REV LETTER: E REV DATE: JUNE 22, 2011 PAGE NO : 3 OF 8 GENERAL SPECIFICATIONS Operating Temperature -40º to +85ºC Storage Temperature -40º to +85ºC ELECTRICAL CHARACTERISTICS1-3, 11 (Typical unless otherwise specified) VZ4 (V) Izt4 (A) Min Typ Max 5.45 5.6 5.75 0.1 IHOLD5 @ Leakage Current R Typ6 (Ohms) 20ºC (A) 0.75 VInt Max8 (V) Test Voltage Max Current (mA) 5.25 10 0.28 R1Max7 (Ohms) 0.45 VINT Max (V) Tripped Power Dissipation10 IFLT Max9 Max Test Current (A) IFLT Max (A) Test Voltage (V) Value (W) Test Voltage (V) 3A +10 -40 +48 -16V 0.8 48 48V Note 1: Note 2: Electrical characteristics determined at 25ºC unless otherwise specified. This device is intended for limited fault protection. Repeated trip events or extended trip endurance can degrade the device and may affect performance to specifications. Performance impact will depend on multiple factors including, but not limited to, voltage, trip current, trip duration, trip cycles, and circuit design. For details or ratings specific to your application contact TE Connectivity Circuit Protection directly. Note 3: Specifications developed using 1.0 ounce 0.045” wide copper traces on dedicated FR4 test boards. Performance in your application may vary. Note 4: Izt is the current at which Vz is measured (VZ = VOUT). Additional VZ values are available on request. Note 5: IHOLD : Maximum steady state IPTC (current entering or exiting the VIN pin of the device) that will not generate a trip event at the specified temperature. Specification assumes IFLT (current flowing through the Zener diode) is sufficiently low so as to prevent the diode from acting as a heat source. Testing is conducted with an “open” Zener. Note 6: R Typ: Resistance between VIN and VOUT pins during normal operation at room temperature. st Note 7: R1Max: The maximum resistance between VIN and VOUT pins at room temperature, one hour after 1 trip or after reflow soldering. Note 8: VINT Max: VINT Max relates to the voltage across the PPTC portion of the PolyZen device (VIN-VOUT). VINT Max is defined as the voltage (VIN-VOUT) at which typical qualification devices (98% devices, 95% confidence) survived at least 100 trip cycles and 24 hours trip endurance at the specified voltage (VIN-VOUT) and current (IPTC). VINT Max testing is conducted using a "shorted" load (VOUT = 0 V). VINT Max is a survivability rating, not a performance rating. Note 9: IFLT Max: IFLT Max relates to the stead state current flowing through the diode portion of the PolyZen device in a fault condition, prior to a trip event. IFLT Max is defined as the current at which typical qualification devices (12 parts per lot from 3 lots) survived 100 test cycles. RMS fault currents above IFLT Max may permanently damage the diode portion of the PolyZen device. Testing is conducted with NO load connected to VOUT, such that IOUT = 0. “Test voltage” is defined as the voltage between VIN to GND and includes the PolyZen Diode drop. Specification is dependent on the direction of current flow through the diode. IFLT Max is a survivability rating, not a performance rating. Note 10: The power dissipated by the device when in the “tripped” state, as measured on TE test boards (see note 3). Note 11: Specifications based on limited qualification data and subject to change. MECHANICAL DIMMENSIONS Length L Width W Height H Length Diode Height Diode Min 3.85 mm (0.152”) 3.85 mm (0.152”) 1.4mm (0.055”) Ld - Hd - Offset O1 - Offset O2 - Typical 4 mm (0.16”) 4 mm (0.16”) 1.7 mm (0.067”) 3.0 mm (0.118”) 1.0 mm (0.039”) 0.6 mm (0.024”) 0.7 mm (0.028”) Max 4.15 mm (0.163") 4.15 mm (0.163") 2.0 mm (0.081”) - PolyZen Polymer Enhanced Zener Diode Micro-Assemblies SOLDER REFLOW RECOMMENDATIONS: Classification Reflow Profiles Profile Feature Average Ramp-Up Rate (Tsmax to Tp) Preheat • Temperature Min (Tsmin) • Temperature Max (Tsmax) • Time (tsmin to tsmax) Time maintained above: • Temperature (TL) • Time (tL) Peak/Classification Temperature (Tp) Time within 5 °C of actual Peak Temperature (tp) Ramp-Down Rate Time 25 °C to Peak Temperature Pb-Free Assembly 3° C/second max. 150 °C 200 °C 60-180 seconds 217 °C 60-150 seconds 260 °C 20-40 seconds 6 °C/second max. 8 minutes max. PRODUCT: ZEN056V075A48LS DOCUMENT: SCD27365 REV LETTER: E REV DATE: JUNE 22, 2011 PAGE NO : 4 OF 8 PRODUCT: ZEN056V075A48LS PolyZen Polymer Enhanced Zener Diode Micro-Assemblies DOCUMENT: SCD27365 REV LETTER: E REV DATE: JUNE 22, 2011 PAGE NO : 5 OF 8 PACKAGING Packaging ZENXXXVXXXAXXLS Tape & Reel 3,000 Reel Dimensions for PolyZen Devices Amax = 330 Nmin = 102 W1 = 8.4 W2 = 11.1 Matte Finish These Area Nmin Amax Taped Component Dimensions for PolyZen Devices Standard Box 15,000 PRODUCT: ZEN056V075A48LS PolyZen Polymer Enhanced Zener Diode Micro-Assemblies DOCUMENT: SCD27365 REV LETTER: E REV DATE: JUNE 22, 2011 PAGE NO : 6 OF 8 Typical Fault Response: ZEN056V075A48LS 48 V/10 A Current Limited Source (Iout=0) 50 V(V) or I (A) 40 Vin (V) Vout (V) I FLT (A) 30 20 10 0 0.00 0.01 0.02 0.03 0.04 Time (sec) Pulse I-V (100 µsec pulse) Pulsed I-V (100 msec pulse) 10 6.00 5.75 5 Current: IFLT (A) 5.50 VOUT (V) 5.25 5.00 4.75 4.50 4.25 ZEN056V075A48LS 4.00 3.75 0 -5 -10 -15 3.50 ZEN056V075A48LS 3.25 3.00 -20 0 0 0 0 0 1 10 100 -1 IFLT (A) 0 2 3 4 5 6 Voltage: VOUT (V) Time to Trip vs. IFLT RMS (Iout=0) VOUT Peak vs. IFLT RMS (IOUT=0) 6.5 6.4 6.3 6.2 6.1 6.0 5.9 5.8 5.7 5.6 5.5 100.0 Time to Trip (sec) VOUT Peak (V) 1 ZEN056V075A48LS 10.0 1.0 0.1 ZEN056V075A48LS 0.0 0 1 2 3 4 5 IFLT RMS (A) 6 7 8 9 10 0 1 2 3 4 5 6 IFLT RMS (A) 7 8 9 10 PRODUCT: ZEN056V075A48LS PolyZen Polymer Enhanced Zener Diode Micro-Assemblies DOCUMENT: SCD27365 REV LETTER: E REV DATE: JUNE 22, 2011 PAGE NO : 7 OF 8 Time To Trip vs. IFLT (IOUT=0) VOUT Peak vs. IFLT (IOUT=0) 0.0 100.000 ZEN056V075A48LS ZEN056V075A48LS Time To Trip (Sec) VOUT Peak (V) -0.2 -0.4 -0.6 -0.8 -1.0 10.000 1.000 0.100 0.010 -1.2 0.001 -1.4 -40 -30 -20 -10 -40 0 -30 -20 -10 0 IFLT RMS (A) IFLT RMS(A) Time to Trip Vs. IPTC RMS (IFLT = 0) Temperature Effect on IHold (IFLT = 0) 100 1.50 IHold (A) Tim e to Trip (sec) ZEN056V075A48LS 1.25 1.00 0.75 0.50 0.25 10 ZENxxxV075A48LS 1 0.1 0.01 0.00 -40 -20 0 20 40 60 80 100 0.001 0 Ambient Temperature (C) 0.50 0.45 RTYP (Ohms) 0.40 0.35 0.30 0.25 0.20 ZENxxxV075A48LS 0.15 0.10 0.05 0.00 40 60 80 Ambient Temperature (°C) 20 IPTC RMS (A) Temperature Effect on RTYP 20 10 100 30 40 PRODUCT: ZEN056V075A48LS PolyZen Polymer Enhanced Zener Diode Micro-Assemblies DOCUMENT: SCD27365 REV LETTER: E REV DATE: JUNE 22, 2011 PAGE NO : 8 OF 8 Materials Information ROHS Compliant ELV Compliant Pb-Free Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of each product for their applications. 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