HMD16M64D16EV-5

HANBiT HMD16M64D16EV 128Mbyte(16Mx64) EDO Mode 4K/8K Ref. 3.3V, DIMM 168 pin Part No. HMD16M64D16EV GENERAL DESCRIPTION The HMD16M64D16EV is a 16Mx64bits Dynamic RAM high density memory module. The HMD16M64D16EV consists of sixteen CMOS 16Mx4bits DRAMs in TSOPІІ 400mil packages mounted on a 168-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The HMD16M64D16EV is a Dual Inline Memory Module and is intended for mounting into 168 pin edge connector sockets FEATURES w Part Identification HMD16M64D16EV- ---- 4KCycles/64ms Ref, Gold Plate Lead HMD16M64D16EVA --- 8KCycles/64ms Ref, Gold Plate Lead SPEED -5 -6 PERFORMANCE RANGE tRAC 50ns 60ns tCAC 13ns 15ns tRC 84ns 104ns tHPC 20ns 25ns w High-density 128MByte design w New JEDEC standard proposal without buffer w CAS-before-RAS Refresh capability w RAS-only and Hidden refresh capability w Single +3.3± 0.3V power supply w EDO mode operation. w LVTTL compatible inputs and outputs w FR4-PCB design w Access times : 50, 60ns w Timing 50ns access 60ns access w Packages 168-pin DIMM w Marking -5 -6 w Marking D PIN NAMES Pin Name A0-A11 Function Address ref) A0-A12 Address ref) /WE0,/WE2 /OE0,/OE2 Read/Write Enable Output Enable SCL NC Input (8k /CAS0 - /CAS7 Column Strobe Serial Clock No Connection DQ0-DQ63 SDA Data In/Out Serial Address /Data I/O SA0 - SA2 Address in EEPROM CB0 - CB7 Check Bit Address Vcc Power (+3.3V) Input (4k Pin Name /RAS0, /RAS2 Function Row Address Strobe Pin Name Vss Function Ground URL: www.hbe.co.kr REV.1.0 (August.2002) -1- HANBit Electronics Co.,Ltd. HANBiT PIN ASSIGNMENT HMD16M64D16EV PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 Symbol Vss DQ0 DQ1 DQ2 DQ3 Vcc DQ4 DQ5 DQ6 DQ7 DQ8 Vss DQ9 DQ10 DQ11 DQ12 DQ13 Vcc DQ14 DQ15 NC NC Vss NC NC Vcc /WE0 /CAS0 PIN 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 Symbol /CAS1 /RAS0 /OE0 Vss A0 A2 A4 A6 A8 A10 A12 Vcc Vcc NC Vss /OE2 /RAS2 /CAS2 /CAS3 /WE2 Vcc NC NC NC NC Vss DQ16 DQ17 PIN 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 Symbol DQ18 DQ19 Vcc DQ20 NC NC NC Vss DQ21 DQ22 DQ23 Vss DQ24 DQ25 DQ26 DQ27 Vcc DQ28 DQ29 DQ30 DQ31 Vss NC NC NC SDA SCL Vcc PIN 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 Symbol Vss DQ32 DQ33 DQ34 DQ35 Vcc DQ36 DQ37 DQ38 DQ39 DQ40 Vss DQ41 DQ42 DQ43 DQ44 DQ45 Vcc DQ46 DQ47 NC NC Vss NC NC Vcc NC /CAS4 PIN 113 114 115 116 117 118 119 120 121 122 123 124 125 126 127 128 129 130 131 132 133 134 135 136 137 138 139 140 Symbol /CAS5 NC NC Vss A1 A3 A5 A7 A9 A11 NC Vcc NC NC Vss NC NC /CAS6 /CAS7 NC Vcc NC NC NC NC Vss DQ48 DQ49 PIN 141 142 143 144 145 146 147 148 149 150 151 152 153 154 155 156 157 158 159 160 161 162 163 164 165 166 167 168 Symbol DQ50 DQ51 Vcc DQ52 NC NC NC Vss DQ53 DQ54 DQ55 Vss DQ56 DQ57 DQ58 DQ59 Vcc DQ60 DQ61 DQ62 DQ63 Vss NC NC SA0 SA1 SA2 Vcc l l A13, /RAS1, /RAS3, CB, SA, SCL, SDA pins are not used in this module. A12 is used for only HMD16M64D16EVA (8k Ref) URL: www.hbe.co.kr REV.1.0 (August.2002) -2- HANBit Electronics Co.,Ltd. HANBiT FUNCTIONAL BLOCK DIAGRAM DQ 0-63 /CAS0 /RAS0 /OE0 /CAS /RAS /OE /W DQ0-3 /CAS4 /RAS2 /OE2 /CAS /RAS /OE /W HMD16M64D16EV DQ32-35 U1 A0 -A11 U11 A0 -A11 /CAS /RAS /OE /W DQ4-7 U2 A0 -A11 /CAS5 /CAS /RAS /OE /W DQ36-39 U12 A0 -A11 /CAS1 /CAS /RAS /OE /W DQ8-11 /CAS /RAS /OE /W DQ40-43 U3 A0 -A11 U13 A0 -A11 /CAS /RAS /OE /W DQ12-15 U4 A0 -A11 /CAS /RAS /OE /W DQ44-47 U14 A0 -A11 /CAS2 /CAS /RAS /OE /W DQ16-19 /CAS6 U6 A0 -A11 /CAS /RAS /OE /W DQ48-51 U15 A0 -A11 /CAS /RAS /OE /W DQ20-23 U7 A0 -A11 /CAS /RAS /OE /W DQ52-55 U16 A0 -A11 /CAS3 /CAS /RAS /OE /W DQ24-27 U8 A0 -A11 /CAS7 /CAS /RAS /OE /W DQ56-59 U17 A0 -A11 /CAS /RAS /OE /W DQ28-31 U9 A0 -A11 /CAS /RAS /OE /W DQ60-63 U18 A0 -A11 /WE2 /WE0 A0-A11 Vcc 0.1uF or 0.22uF Capacitor To all DRAMs Vss URL: www.hbe.co.kr REV.1.0 (August.2002) -3HANBit Electronics Co.,Ltd. HANBiT ABSOLUTE MAXIMUM RATINGS PARAMETER Voltage on Any Pin Relative to Vss Voltage on Vcc Supply Relative to Vss Power Dissipation Storage Temperature SYMBOL VIN ,OUT Vcc PD TSTG HMD16M64D16EV RATING -0.5V to 4.6V -0.5V to 4.6V 16W -55oC to 150oC Short Circuit Output Current IOS 50mA w Permanent device damage may occur if " Absolute Maximum Ratings" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. RECOMMENDED DC OPERATING CONDITIONS ( Voltage reference to VSS, TA=0 to 70 o C ) PARAMETER Supply Voltage Ground Input High Voltage Input Low Voltage SYMBOL Vcc Vss VIH VIL MIN 3.0 0 2.0 -0.3 TYP. 3.3 0 MAX 3.6 0 Vcc+0.3 0.8 UNIT V V V V DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted) HMD16M64D16EVA (8K REF) SYMBOL SPEED MIN MAX -5 ICC1 -6 ICC2 ICC3 -6 -5 ICC4 -6 ICC5 ICC6 -6 Il(L) IO(L) VOH VOL URL: www.hbe.co.kr REV.1.0 (August.2002) HMD16M64D16EV (4K REF) UNITS MIN MAX 1920 1760 32 1920 1760 1760 1600 8 1920 1760 -10 -5 2.4 10 5 0.4 mA mA MA mA mA mA mA MA mA mA µA µA V V - 1400 1280 Don't care -5 - 32 1400 1280 - 1600 1440 Don't care -5 - 8 1440 1280 10 5 2.4 - 10 5 0.4 -4- HANBit Electronics Co.,Ltd. HANBiT HMD16M64D16EV ICC1 : Operating Current * (/RAS , /CAS , Address cycling @t RC=min.) ICC2 : Standby Current ( /RAS=/CAS=VIH ) ICC3 : /RAS Only Refresh Current * ( /CAS=V IH, /RAS, Address cycling @tRC=min ) ICC4 : EDO Mode Current * (/RAS=VIL, /CAS, Address cycling @tPC=min ) ICC5 : Standby Current (/RAS=/CAS=Vcc-0.2V ) ICC6 : /CAS-Before-/RAS Refresh Current * (/RAS and /CAS cycling @t RC=min ) IIL : Input Leakage Current (Any input 0V ≤ VIN ≤ 4.5V, all other pins not under test = 0V) IOL : Output Leakage Current (Data out is disabled, 0V ≤ VOUT ≤ 3.3V VOH : Output High Voltage Level (IOH= -2mA ) VOL : Output Low Voltage Level (IOL = 2mA ) * NOTE: ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open. ICC is specified as an average current. In ICC1 and ICC3, address cad be changed maximum once while /RAS=VIL. In ICC4, address can be changed maximum once within one page mode cycle. o CAPACITANCE ( TA=25 C, Vcc = 3.3V, f = 1Mz ) SYMBOL CIN1 C IN2 CIN3 CIN4 CDQ1 o DESCRIPTION Input Capacitance (A0-A11) Input Capacitance (/WE0,/WE2,/OE0,/OE2) Input Capacitance (/RAS0,/RAS2) Input Capacitance (/CAS0-/CAS7) Input/Output Capacitance (DQ0-63) MIN - MAX 90 66 66 24 17 UNITS pF pF pF pF pF AC CHARACTERISTICS ( 0 C ≤ TA ≤ 70oC , Vcc = 3V±10%, See notes 1,2.) -5 -6 UNIT MIN MAX MIN 104 153 50 13 25 3 3 3 1 30 50 8 38 8 -5- STANDARD OPERATION Random read or write cycle time Read-modify-write cycle time Access time from /RAS Access time from /CAS Access time from column address /CAS to output in Low-Z /OE to output in Low-Z Output buffer turn-off delay from /CAS Transition time (rise and fall) /RAS precharge time /RAS pulse width /RAS hold time /CAS hold time /CAS pulse width URL: www.hbe.co.kr REV.1.0 (August.2002) SYMBOL MAX tRC tRWC tRAC tCAC tAA tCLZ tOLZ tOFF tT tRP tRAS tRSH tCSH tCAS 84 128 ns ns 60 15 30 ns ns ns ns ns 13 50 ns ns ns 10K ns ns ns 10K ns 3 3 13 50 3 1 40 10K 60 10 40 10K 10 HANBit Electronics Co.,Ltd. HANBiT /RAS to /CAS delay time /RAS to column address delay time /CAS to /RAS precharge time Row address set-up time Row address hold time Column address set-up time Column address hold time Column address hold referenced to /RAS Column Address to /RAS lead time Read command set-up time Read command hold referenced to /CAS Read command hold referenced to /RAS Write command hold time Write command pulse width Write command to /RAS lead time Write command to /CAS lead time Data-in set-up time Data-in hold time Refresh period Write command set-up time /CAS to /W delay time /RAS to /W delay time Column address to /W delay time /CAS precharge to /W delay time /CAS setup time (/CAS-before /RAS refresh) /CAS hold time(/CAS-before-/RAS refresh) /RAS to /CAS precharge time Access time from /CAS precharge Hyper page mode cycle time Hyper page mode read-modify write cycle time /CAS precharge time(Hyper page cycle) /RAS pulse width (Hyper page cycle) /RAS hold time from /CAS precharge /OE access time /OE to date delay tCP tRASP tRHCP tOEA tOED 10 7 50 30 13 13 200K 10 60 35 tCHR tRPC tCPA tHPC tHPRWC 20 67 10 5 28 25 73 10 5 tRCD tRAD tCRP tASR tRAH tASC tCAH tRRH tRAL tRCS tRCH tRRH tWCH tWP tRWL tCWL tDS tDH tREF tWCS tCWD tRWD tAWD tCPWD tCSR 0 33 70 45 47 10 17 12 5 0 7 0 7 0 25 0 0 0 7 7 8 7 0 7 64 0 38 84 53 58 10 37 25 20 15 5 0 10 0 10 0 30 0 0 0 10 10 10 10 0 10 HMD16M64D16EV 45 30 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 64 ms ns ns ns ns ns ns ns ns 35 ns ns ns ns 200K ns ns 15 ns ns URL: www.hbe.co.kr REV.1.0 (August.2002) -6- HANBit Electronics Co.,Ltd. HANBiT Output buffer tune off delay time from /OE /OE command hold time Output data hold time Output buffer turn off delay from /RAS Output buffer turn off delay from /WE /WE to data delay /OE to /CAS hold time /CAS hold time to /OE /OE precharge time /WE pulse width (Hyper page cycle) tOEZ tOEH tDOH tREZ tWEZ tWED tOCH tCHO tOEP tWPE 3 5 5 3 3 15 5 5 5 5 13 13 13 3 5 5 3 3 15 5 5 5 5 HMD16M64D16EV 13 ns ns ns 13 13 ns ns ns ns ns ns ns NOTES 1.An initial pause of 200µs is required after power-up followed by any 8 /RAS-only or /CAS-before-/RAS refresh cycles before proper device operation is achieved. 2.Input voltage levels are VIH (min) and VIL (max) are reference levels for measuring timing of input signals. Transition times are measured between VIH(min) and VIL(max) and are assumed to be 5ns for all inputs. 3.Measured with a load equivalent to 1TTL loads and 100pF 4.Operation within the tRCD(max) limit insures that tRAC(max) can be met. tRCD(max) is specified as a reference point only. If tRCD is greater than the specified tRCD(max) limit, then access time is controlled exclusively by t CAC. 5.Assumes that tRCD ≥ tRCD(max) 6.This parameter defines the time at which the output achieves the open circuit condition and is not referenced to VOH or VOL. 7. tWCS, tRWD, tCWD and tAWD are non restrictive operating parameter. They are included in the data sheet as electrical characteristic only. If t WCS ≥ tWCS(min) the cycle is an early write cycle and the data out pin will remain high impedance for the duration of the cycle the data output will contain the data read from the selected address. If neither of the above conditions are satisfied, The condition of the data out is indeternimated. 8. Either tRCH or tRRH must be satisfied for a read cycle. 9. Operation within the tRAD(max) limit insures that tRAC(max) can be met. tRAD(max) is specified as a reference point only. If tRAD is greater than the specified tRAD(max) limit. then access time is controlled by tAA. 10. If /RAS goes to high before /CAS high going, the open circuit condition of the output is achieved by /CAS high going. If /Cas goes to high before /RAS high going, the open circuit condition of the output is achieved by /RAS high going. 11.tASC ≥ 6ns URL: www.hbe.co.kr REV.1.0 (August.2002) -7- HANBit Electronics Co.,Ltd. HANBiT HMD16M64D16EV PACKAGING INFORMATION (FRONT VIEW) 3.69 MAX 0.25 mm MAX 2.54 mm MIN 1.27 Gold : 1.00mm 1.27±0.1 mm ORDERING INFORMATION Part Number Density Org. Package Component Number 16EA 16EA Vcc MODE SPEED HMD16M64D16EV-5 HMD16M64D16EV-6 128MByte 128MByte 16MX64 16MX 64 168 Pin-DIMM 168 Pin-DIMM 3.3V 3.3V EDO EDO 50ns 60ns URL: www.hbe.co.kr REV.1.0 (August.2002) -8- HANBit Electronics Co.,Ltd.