HMD1M32M2GL-6

HANBit HMD1M32M2GL 4Mbyte(1Mx32) Fast Page Mode, 1K Refresh, 72Pin SIMM, 5V Design Part No. HMD1M32M2GL DESCRIPTION The HMD1M32M2GL is an 1M x 32 bits Dynamic RAM MODULE which is assembled 2 pieces of 1M x 16bit DRAMs in 42 pin SOJ package on single sides the printed circuit board with decoupling capacitors. The HMD1M32M2GL is optimized for application to the systems, which are required high density and large capacity such as main memory of the computers and an image memory systems, and to the others, which are, requested compact size. The HMD1M32M2GL provides common data and outputs. Features PIN ASSIGNMENT w 72 pins Single In-Line Package w Fast Page Mode Capability w Single +5V± 0.5V power supply w Fast Access Time & Cycle Time tRAC HMD1M32M2G-5 HMD1M32M2G-6 w Low Power w /RAS Only Refresh, /CAS before /RAS Refresh, Hidden Refresh Capability w All inputs and outputs TTL Compatible w 1,024 Refresh Cycles/16ms 50 60 tCAC 15 15 tRC 90 110 tPC 35 40 PIN 1 2 3 4 5 6 7 8 9 10 11 12 SYMBOL Vss DQ0 DQ16 DQ1 DQ17 DQ2 DQ18 DQ3 DQ19 Vcc /WEO A0 A1 A2 A3 A4 A5 A6 A7 DQ4 DQ20 DQ5 DQ21 DQ6 PIN 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 SYMBO L DQ22 DQ7 DQ23 A8 NC(A10) Vcc /WE2 NC Vcc /RAS Vcc NC NC /OE Vss /CAS Vcc NC NC NC A9 NC(A11) /WE1 Vcc PIN 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 SYMBOL DQ8 DQ24 DQ9 DQ25 DQ10 DQ26 DQ11 DQ27 DQ12 DQ28 /WE3 DQ29 DQ13 DQ30 DQ14 DQ31 DQ15 Vcc NC NC Vss NC Vss Vss PIN DESCRIPTION PIN A0 – A9 DQ0 – DQ31 /RAS /CAS /OE FUNCTION Address Inputs Data Input/Output Row Address Strobe Column Address Strobe Data Output Enable PIN /WE Vcc Vss NC FUNCTION Read/Write Enable Power (+5V) Ground No Connection 13 14 15 16 17 18 19 20 21 22 23 24 URL:www.hbe.co.kr REV.1.0 (August.2002) 1 HANBit Electronics Co., Ltd. HANBit FUNCTIONAL BLOCK DIAGRAM U1 /RAS /CAS0 /LCAS /CAS1 /UCAS /RAS DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 HMD1M32M2GL DQ0-DQ7 /OE /OE /WE A0-A9 DQ8-DQ15 /RAS /RAS /LCAS /CAS2 /UCAS /CAS3 U2 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9D Q10 DQ11 DQ12 DQ13 DQ14 DQ15 DQ16-DQ23 /OE DQ24-DQ31 /WE /WE A0-A9 A0-A9 Vcc Vss 0.1uF Capacitor URL:www.hbe.co.kr REV.1.0 (August.2002) 2 HANBit Electronics Co., Ltd. HANBit ABSOLUTE MAXIMUM RATINGS* SYMBOL TA TSTG VIN/VOUT VCC IOUT PD PARAMETER Ambient Temperature under Bias Storage Temperature (Plastic) Voltage on any Pin Relative to Vss Power Supply Voltage Short Circuit Output Current Power Dissipation RATING 0 ~ 70 -55 ~ 150 -1.0 ~ 7.0 -1.0 ~ 7.0 100 2 HMD1M32M2GL UNIT C C V V mA W *NOTE: 1. Stress greater than above absolute Maximum Ratings? May cause permanent damage to the device. RECOMMENDED DC OPERATING CONDITIONS (TA = 0 ~ 70C) PARAMETER Supply Voltage Ground Input High Voltage Input Low Voltage *NOTE: All voltages referenced to Vcc SYMBOL Vcc Vss VIH VIL MIN 4.5 0 2.4 -1.0 TYP. 5.0 0 MAX 5.5 0 Vcc+1 0.8 UNIT V V V V DC AND OPERATING CHARACTERISTICS SYMBOL VOH VOL ICC1 (/RAS,/CAS,Address Cycling : tRC = tRC min) ICC2 ICC3 (/RAS Cycling, /CAS = VIH,: tRC = tRC min) Fast Page Mode Current ICC4 (/RAS =VIL, /CAS, Address Cycling : tPC = tPC min) ICC5 ICC6 Standby Current (/RAS,/CAS >= Vcc – 0.2V) -5 /CAS before /RAS Refresh Current (tRC = tRC min) -6 Self Refresh Current ICCS (/RAS=/UCAS=/LCAS=VIL, /WE=/OE=A0~A9= Vcc – 0.2V or 0.2V, DQ0~DQ31= Vcc – 0.2V, 0.2V or Open) Input Leakage Current II(L) IO(L) -10 (Any Input (0V