HMD8M36M6EG

HANBit HMD8M36M6EG 32Mbyte(8Mx36) 72-pin SIMM EDO with Parity Mode, 4K Ref. 5V Part No. HMD8M36M6E, HMD8M36M6EG GENERAL DESCRIPTION The HMD8M36M6E is a 8M x 36bit dynamic RAM high density memory module. The module consists of four CMOS 4M x 16 bit DRAMs in 50-pin TSOP packages and two CMOS 4M x 4bit Quad CAS DRAM in 28pin SOJ package mounted on a 72-pin, double-sided, FR-4-printed circuit board. A 0.1uF or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM components. The module is a single In-line memory module with edge connections and is intended for mounting in to 72-pin edge connector sockets. All module components may be powered from a single 5V DC power supply and all inputs and outputs are TTL-compatible. FEATURES w Part Identification HMD8M36M6E----4K Cycles/64ms Ref. Solder HMD8M36M6EG- 4K Cycles/64ms Ref. Gold w Access times : 50, 60ns w High-density 32MByte design w Single +5V ± 0.5V power supply w JEDEC Standard pinout w EDO mode operation w TTL compatible inputs and outputs w FR4-PCB design PIN 1 2 3 4 5 6 7 8 SYMBOL Vss DQ0 DQ18 DQ1 DQ19 DQ2 DQ20 DQ3 DQ21 Vcc NC A0 A1 A2 A3 A4 A5 A6 A10 DQ4 DQ22 DQ5 DQ23 DQ6 PIN 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 SYMBOL DQ24 DQ7 DQ25 A7 A11 Vcc A8 A9 NC NC DQ26 DQ8 DQ17 DQ35 Vss /CAS0 /CAS2 /CAS3 /CAS1 /RAS0 /RAS1 NC /WE NC PIN 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 SYMBOL DQ9 DQ27 DQ10 DQ28 DQ11 DQ29 DQ12 DQ30 DQ13 DQ31 Vcc DQ32 DQ14 DQ33 DQ15 DQ34 DQ16 NC PD1 PD2 PD3 PD4 NC Vss PIN ASSIGNMENT OPTIONS w Timing 50ns access 60ns access w Packages 72-pin SIMM MARKING -5 -6 9 10 11 12 13 14 15 16 17 60ns NC Vss Vss NC 18 19 20 21 22 23 24 tRC 90ns 110ns M PRESENCE DETECT PINS Pin PD1 PD2 PD3 PD4 50ns NC Vss Vss Vss PERFORMANCE RANGE Speed 5 6 tRAC 50ns 60ns tCAC 13ns 15ns URL:www.hbe.co.kr REV.1.0 (August.2002) -1- HANBit Electronics Co.,Ltd. HANBit FUNCTIONAL BLOCK DIAGRAM DQ0-DQ7 HMD8M36M6EG U1 /RAS0 /RAS /CAS0 /LCAS /CAS1 /UCAS DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ9-DQ16 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 U4 /RAS /RAS1 /CAS0 /LCAS /UCAS DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 /CAS1 /OE /W A0-A11 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 /OE /W A0-A11 /RAS /CAS0 /CAS1 /CAS2 /CAS3 /W DQ8,17,26,35 U2 DQ0 DQ1 DQ2 DQ3 DQ0 DQ1 DQ2 DQ3 U5 /RAS /CAS0 /CAS1 /CAS2 /CAS3 A0-A11 A0-A11 /W DQ18-DQ25 U3 /RAS0 /RAS /CAS2 /LCAS DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ27-DQ34 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 U6 /RAS /RAS1 /CAS2 /LCAS /CAS3 /UCAS DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 /UCAS DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 /CAS3 /OE /OE /W /WE A0-A11 A0-A11 /W A0-A11 Vcc Vss 0.1uF or Capacitor for each DRAM 0.22uF To all DRAMs URL:www.hbe.co.kr REV.1.0 (August.2002) -2- HANBit Electronics Co.,Ltd. HANBit ABSOLUTE MAXIMUM RATINGS PARAMETER Voltage on Any Pin Relative to Vss Voltage on Vcc Supply Relative to Vss Power Dissipation Storage Temperature SYMBOL VIN ,OUT Vcc PD TSTG HMD8M36M6EG RATING -1V to 7.0V -1V to 7.0V 6W -55oC to 150oC Short Circuit Output Current IOS 50mA w Permanent device damage may occur if " Absolute Maximum Ratings" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. RECOMMENDED DC OPERATING CONDITIONS ( Voltage reference to VSS, TA=0 to 70 o C ) PARAMETER Supply Voltage Ground Input High Voltage Input Low Voltage SYMBOL Vcc Vss VIH VIL MIN 4.5 0 2.4 -1.0 TYP. 5.0 0 MAX 5.5 0 Vcc+1 0.8 UNIT V V V V DC AND OPERATING CHARACTERISTICS SYMBOL ICC1 SPEED -5 -6 ICC2 ICC3 Don't care -5 -6 ICC4 -5 -6 ICC5 ICC6 Don't care -5 -6 Il(L) IO(L) VOH VOL ICC2 : Standby Current ( /RAS=/CAS=VIH ) ICC3 : /RAS Only Refresh Current * ( /CAS=V IH, /RAS, Address cycling @tRC=min ) URL:www.hbe.co.kr REV.1.0 (August.2002) MIN -80 -10 2.4 - MAX 736 656 32 736 656 656 576 16 736 656 80 10 0.4 UNITS MA MA MA MA MA MA MA MA MA MA µA µA V V ICC1 : Operating Current * (/RAS , /CAS , Address cycling @t RC=min.) -3- HANBit Electronics Co.,Ltd. HANBit ICC4 : EDO Mode Current * (/RAS=VIL, /CAS, Address cycling @tPC=min ) ICC5 : Standby Current (/RAS=/CAS=Vcc-0.2V ) ICC6 : /CAS-Before-/RAS Refresh Current * (/RAS and /CAS cycling @t RC=min ) IIL : Input Leakage Current (Any input 0V ≤ VIN ≤ 6.5V, all other pins not under test = 0V) IOL : Output Leakage Current (Data out is disabled, 0V ≤ VOUT ≤ 5.5V VOH : Output High Voltage Level (IOH= -5mA ) VOL : Output Low Voltage Level (IOL = 4.2mA ) HMD8M36M6EG * NOTE: ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open. ICC is specified as an average current. In ICC1 and ICC3, address cad be changed maximum once while /RAS=VIL. In ICC4, address can be changed maximum once within one page mode cycle. o CAPACITANCE ( TA=25 C, Vcc = 5V, f = 1Mz ) SYMBOL CIN1 C IN2 CIN3 CIN4 CDQ o DESCRIPTION Input Capacitance (A0-A11) Input Capacitance (/WE) Input Capacitance (/RAS0) Input Capacitance (/CAS0-/CAS3) Input/Output Capacitance (DQ) MIN - MAX 110 130 40 30 20 UNITS pF pF pF pF pF AC CHARACTERISTICS ( 0 C ≤ TA ≤ 70oC , Vcc = 5V±10%, See notes 1,2.) -5 -6 UNIT MIN MAX MIN 110 50 13 25 0 0 3 30 50 13 50 13 20 15 5 0 10 10K 37 25 10K 13 50 0 0 3 40 60 15 60 15 20 15 5 0 10 10K 45 30 10K 15 50 60 15 30 MAX ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 90 STANDARD OPERATION Random read or write cycle time Access time from /RAS Access time from /CAS Access time from column address /CAS to output in Low-Z Output buffer turn-off delay Transition time (rise and fall) /RAS precharge time /RAS pulse width /RAS hold time /CAS hold time /CAS pulse width /RAS to /CAS delay time /RAS to column address delay time /CAS to /RAS precharge time Row address set-up time Row address hold time URL:www.hbe.co.kr REV.1.0 (August.2002) SYMBOL tRC tRAC tCAC tAA tCLZ tOFF tT tRP tRAS tRSH tCSH tCAS tRCD tRAD tCRP tASR tRAH -4- HANBit Electronics Co.,Ltd. HANBit Column address set-up time Column address hold time Column Address to /RAS lead time Read command set-up time Read command hold referenced to /CAS Read command hold referenced to /RAS Write command hold time Write command pulse width Write command to /RAS lead time Write command to /CAS lead time Data-in set-up time Data-in hold time Data-in hold referenced to /RAS Refresh period Write command set-up time /CAS setup time (C-B-R refresh) /CAS hold time (C-B-R refresh) /RAS precharge to /CAS hold time Access time from /CAS precharge EDO mode cycle time /CAS precharge time (Fast page) NOTES tASC tCAH tRAL tRCS tRCH tRRH tWCH tWP tRWL tCWL tDS tDH tDHR tREF tWCS tCSR tCHR tRPC tCPA tPC tCP 20 10 0 5 10 5 30 0 10 25 0 0 0 10 10 15 13 0 10 50 64 HMD8M36M6EG 0 10 30 0 0 0 10 10 15 15 0 15 55 64 0 5 10 5 35 25 10 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Ns Ns ns 1.An initial pause of 200µs is required after power-up followed by any 8 /RAS-only or /CAS-before-/RAS refresh cycles before proper device operation is achieved. 2.VIH (min) and VIL (max) are reference levels for measuring timing of input signals. Transition times are measured between VIH(min) and VIL(max) and are assumed to be 5ns for all inputs. 3.Measured with a load equivalent to 1TTL loads and 100pF 4.Operation within the tRCD(max) limit insures that tRAC(max) can be met. tRCD(max) is specified as a reference point only. If tRCD is greater than the specified tRCD(max) limit, then access time is controlled exclusively by t CAC. 5.Assumes that tRCD ≥ tRCD(max) 6. tAR, tWCR, tDHR are referenced to tRAD(max) 7.This parameter defines the time at which the output achieves the open circuit condition and is not referenced to V OH or VOL. 8. tWCS, tRWD, tCWD and tAWD are non restrictive operating parameter. They are included in the data sheet as electrical characteristic only. If t WCS ≥ tWCS(min) the cycle is an early write cycle and the data out pin will remain high impedance for the duration of the cycle. 9. Either tRCH or tRRH must be satisfied for a read cycle. 10. These parameters are referenced to the /CAS leading edge in early write cycles and to the /W leading edge in readwrite cycles. 11. Operation within the tRAD(max) limit insures that tRAC(max) can be met. tRAD(max) is specified as a reference point only. If tRAD is greater than the specified tRAD(max) limit. then access time is controlled by tAA. URL:www.hbe.co.kr REV.1.0 (August.2002) -5- HANBit Electronics Co.,Ltd. HANBit PACKAGING INFORMATION HMD8M36M6EG 107.95 mm 101.19 mm 3.38 mm R1.57 mm R3.18 ±0.51mm 18.52 10.16 mm 6.35 mm 2.03 6.35mm 6.35 mm 95.25 mm R1.57±10 mm 7.68mm MAX 0.25 mm MAX 2.54 mm MIN Gold : 1.04±0.10 mm 1.27 Solder:0.914±0.10mm 1.29±0.08 mm ORDERING INFORMATION Part Number Density Org. Package Vcc SPEED HMD8M36M6EG-5 HMD8M36M6EG-6 32MByte 32MByte 8MX 36bit 8MX 36bit 72 Pin-SIMM 72 Pin-SIMM 5.0V 5.0V 50ns 60ns URL:www.hbe.co.kr REV.1.0 (August.2002) -6- HANBit Electronics Co.,Ltd.