HMF16M8F8VS-120

HANBit HMF16M8F8VS FLASH-ROM MODULE 16MByte (16M x 8-Bit) , SMM 80Pin Part No. HMF16M8F8VS GENERAL DESCRIPTION The HMF16M8F8VS is a high-speed flash read only memory (FROM) module containing 16,777,216 bytes organized in an x8bit configuration. The module consists of eight 2M x 8 FROM mounted on a 80-pin, SMM connector FR4-printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Output enable (/OE) and write enable (/WE) can set the memory input and output. The host system can detect a program or erase operation is complete by observing the Ready Pin, or reading the DQ7(Data # Polling) and DQ6(Toggle) status bits. When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power design. All module components may be powered from a single + 3V DC power supply and all inputs and outputs are LVTTLcompatible. FEATURES w Part identification HMF16M8F8VS (Bottom boot block configuration) w Access time: 90, 100, 120ns w High-density 16MByte design w High-reliability, low-power design w Single + 3V to 3.6V power supply w 80-Pin Designed 40-Pin, 0.8mm Fine Pitch Connector P1,P2 w Minimum 100,000 write cycle guarantee per sector w 10-year data retention at 85 oC w Flexible sector architecture w Embedded algorithms w Erase suspend / Erase resume 6 7 8 9 10 11 12 13 - 90 -100 16 120ns access w Packages -120 17 18 A13 A14 A15 Vcc 37 38 39 40 A12 36 14 15 100ns access /RY_BY Vss /RESET /WE A19 A8 A9 A10 Vss A11 26 27 28 29 30 31 32 33 34 35 PIN 1 2 3 4 5 Symbol Vcc A20 NC NC NC P1 PIN 21 22 23 24 25 PIN ASSIGNMENT P2 Symbol Vcc NC DQ7 NC DQ6 NC Vss DQ5 NC DQ4 NC DQ3 NC Vss DQ2 NC DQ1 NC DQ0 Vcc PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Symbol Vcc /CE1 /CE2 /CE3 /CE4 /CE5 Vss /CE6 /CE7 NC NC NC NC Vss NC NC NC NC NC Vcc PIN 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 Symbol Vcc NC NC NC /OE /CE0 Vss A16 A0 A18 A17 A7 A6 Vss A5 A4 A3 A2 A1 Vcc OPTIONS w Timing 90ns access MARKING SMM 80-pin F 19 20 URL: www.hbe.co.kr REV.02(August,2002) 1 HANBit Electronics Co., Ltd. HANBit FUNCTIONAL BLOCK DIAGRAM HMF16M8F8VS A(0 : 20) DQ(0 :7) A(0:20 DQ(0:7) /CE0 /CE /OE /WE /Reset /RY-BY A(0:20) DQ(0:7) /CE /CE4 /OE U4 /WE /Reset /RY-BY U8 A(0:20 DQ(0:7) /CE1 /CE /OE /WE /Reset /RY-BY A(0:20) DQ(0:7) /CE /CE5 U3 /OE /WE /Reset /RY-BY U7 A(0:20) DQ(0:7) /CE2 /CE A(0:20) DQ(0:7) /CE /CE6 /OE /WE /Reset /RY-BY /OE U2 /WE /Reset /RY-BY U6 A(0:20) DQ(0:7) /CE3 /OE /WE /RESE /RY_BY T /CE A(0:20) DQ(0:7 ) /CE /CE7 /OE /WE /Reset /RY-BY /OE U1 /WE /Reset /RY-BY U5 PIN DESCRIPTION PIN A0 – A20 DQ0 – DQ7 /CE0-/CE7 /OE /WE /RESET FUNCTION Address Inputs Data Input/Output Chip Enable Output Enable Read/Write Enable Hardware Reset Pin PIN /BYTE Vcc Vss /RY_BY NC FUNCTION Word / Byte selection Power (+3V) Ground Ready/Busy output No Connection URL: www.hbe.co.kr REV.02(August,2002) 2 HANBit Electronics Co., Ltd. HANBit TRUTH TABLE MODE STANDBY RESET SECTOR PROTECT SECTOR UNPROTECT READ W RITE /CS Vcc±0.3V X L L L L /OE X X H H L H /WE X X L L H L RESET HMF16M8F8VS DQ HIGH-Z HIGH-Z DIN, DOUT DIN, DOUT DOUT DOUT Vcc±0.3V L VID VID H H Note : X means don't care, WE0* Low byte (D0~7) Write enable, WE1* High byte(D8~15 ) Write enable. ABSOLUTE MAXIMUM RATINGS PARAMETER Voltage on Any Pin Relative to Vss Voltage on Vcc Supply Relative to Vss Output Short Circuit Current Storage Temperature Operating Temperature RATING -0.5V to Vcc +0.5V -0.5V to +4.0V 1,600mA -65oC to +150oC -0oC to +70oC w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED OPERATING CONDITIONS PARAMETER Vcc for regulated Supply Voltage Vcc for full voltage RANGE +2.0V to 3.6V +2.7V to 3.6V DC AND OPERATING CHARACTERISTICS PARAMETER Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage Vcc Active Read Current Vcc Active Write Current Vcc Standby Current Vcc Reset Current TEST CONDITIONS VIN= VSS to VCC , VCC= VCC max VOUT= VSS to VCC, VCC= VCC max IOH = -2.0mA, Vcc = Vcc min IOL = 4.0mA, Vcc = Vcc min /CE = VIL, ,/OE=VIL, f=5MHz /CE = VIL, /OE=VIH /CE, RESET=VCC±0.3V /RESET=Vss±0.3V, SYMBOL IL1 IL0 VOH VOL ICC1 ICC2 ICC3 ICC4 MIN -8.0 -8.0 0.85xVcc 0.4 128 240 40 40 MAX +8.0 +8.0 UNITS µA µA V V mA mA µA µA URL: www.hbe.co.kr REV.02(August,2002) 3 HANBit Electronics Co., Ltd. HANBit Low Vcc Lock-Out Voltage VLKO HMF16M8F8VS 1.5 V ERASE AND PROGRAMMING PERFORMANCE LIMITS PARAMETER MIN. Block Erase Time TYP. 0.7 MAX. Excludes 00H programming 15 Sec prior to erasure Byte Programming Time 9 270 µS Excludes system-level overhead Excludes system-level Chip Programming Time 18 54 sec overhead UNIT COMMENTS CAPACITANCE PARAMETER SYMBOL CIN COUT CIN2 PARAMETER TEST SETUP DESCRIPTION Input Capacitance Output Capacitance Control Pin Capacitance VIN = 0 VOUT = 0 VIN = 0 10 10 10 pF pF pF MIN. MAX UNIT Notes : Test conditions TA = 25o C, f=1.0 MHz. AC CHARACTERISTICS u Read Only Operations Characteristics PARAMETER CL=100pF SYMBOLS DESCRIPTION -90 JEDEC tAVAV tELQV tGLQV tEHQZ tAXQX STANDARD Min tRC tCE tOE tDF tQH /CE or /OE, Whichever Occurs First Read Cycle Time Chip Enable to Output Delay Chip Enable to Output Delay Chip Enable to Output High-Z Output Hold Time From Addresses, 0 0 0 ns 90 90 35 30 Max Min 100 100 40 30 Max Min 120 120 50 30 Max ns ns ns ns -100 -120 UNIT URL: www.hbe.co.kr REV.02(August,2002) 4 HANBit Electronics Co., Ltd. HANBit TEST CONDITIONS TEST CONDITION Output load Output load capacitance, 30 CL (Including jig capacitance) Input rise and full times Input pulse levels Input timing measurement reference levels Output timing measurement reference levels 5 0.0 - 3.0 1.5 1.5 75 HMF16M8F8VS ALL OTHERS 1TTL gate 100 20 0.45-2.4 0.8, 2.0 0.8, 2.0 UNIT pF ns V V V 3.3V 2.7kΩ Device Under Test CL IN3064 or Equivalent 6.2kΩ Diodes = IN3064 or Equivalent Note : CL = 100pF including jig capacitance u Erase/Program Operations PARAMETER SYMBOLS DESCRIPTION JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX STANDARD Min tWC tAS tAH tDS tDH tOES tGHWL tELWL tWHEH URL: www.hbe.co.kr REV.02(August,2002) CL=100pF -90 Max -100 Min 100 0 45 45 0 0 0 0 0 Max -120 Min 120 0 50 50 0 0 0 0 0 Max ns ns ns ns ns ns ns ns ns UNIT W rite Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write /CE Setup Time /CE Hold Time 90 0 45 45 0 0 0 0 0 tGHWL tCS tCH 5 HANBit Electronics Co., Ltd. HANBit tWLWH tWHWL tWHWH1 tWHWH2 tWP tWPH tWHWH1 tBERS tVCS tRB tBUSY W rite Pulse Width W rite Pulse Width High Byte Programming Operation Block Erase Operation Vcc Setup Time Recovery time from RY/BY Program/Erase Valid to RY/BY Delay 45 30 9 0.7 50 0 90 45 30 9 0.7 50 0 90 HMF16M8F8VS 50 30 9 0.7 50 0 90 ns ns µs sec µs ns ns u Alternate /CE Controlled Erase/Program Operations PARAMETER SYMBOLS DESCRIPTION JEDEC tAVAV tAVEL tELAX tDVEH tEHDX STANDARD tWC tAS tAH tDS tDH tOES tGHEL tWLEL tEHWH tELEH tEHEL tGHEL tWS tWH tCP tCPH tBUSY tRB W rite Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write /OE High to /WE Low /WE Hold Time /CE Pulse Width /CE Pulse Width High Program/Erase Valid RY//BY Delay Recovery Time from RY//BY Min 90 0 45 45 0 0 0 0 0 45 30 90 0 -90 Max Min 100 0 45 45 0 0 0 0 0 45 30 90 0 CL=100pF -100 Max -120 Min 120 0 50 50 0 0 0 0 0 50 30 90 0 Max ns ns ns ns ns ns ns ns ns ns ns ns ns UNIT URL: www.hbe.co.kr REV.02(August,2002) 6 HANBit Electronics Co., Ltd. HANBit TIMING DIAGRAMS HMF16M8F8VS Notes : 1. DQ7 is the output of the complement of the data writ ten to the device. 2. DOUT is the output of the data written to the device. 3. PA : Program Address, PD : Program Data 4. The illustration shows the last two cycles of the program command sequence. URL: www.hbe.co.kr REV.02(August,2002) 7 HANBit Electronics Co., Ltd. HANBit HMF16M8F8VS Notes : 1. DQ7 is the output of the complement of th e data written to the device. 2. DOUT is the output of the data written to the device. 3. PA : Program Address, PD : Program Data 4. The illustration shows the last two cycles of the program command sequence. URL: www.hbe.co.kr REV.02(August,2002) 8 HANBit Electronics Co., Ltd. HANBit HMF16M8F8VS URL: www.hbe.co.kr REV.02(August,2002) 9 HANBit Electronics Co., Ltd. HANBit PACKAGE DIMENSIONS UNIT: mm Front-Side HMF16M8F8VS Rear-Side URL: www.hbe.co.kr REV.02(August,2002) 10 HANBit Electronics Co., Ltd. HANBit ORDERING INFORMATION Component Number 8EA 8EA 8EA HMF16M8F8VS Part Number Density Org. Package Vcc SPEED HMF16M8F8VS-90 HMF16M8F8VS-100 HMF16M8F8VS-120 16MByte 16MByte 16MByte x8 x8 x8 80Pin -SMM 80Pin -SMM 80Pin -SMM 3.3V 3.3V 3.3V 90ns 100ns 120ns URL: www.hbe.co.kr REV.02(August,2002) 11 HANBit Electronics Co., Ltd.