HANBit
HMF1M32F2VC
Flash-ROM Module 4MByte (1Mx32Bit), 80Pin-MMC, 3.3V Design Part No.
HMF1M32F2VC
GENERAL DESCRIPTION
The HMF1M32F2VC is a high-speed flash read only memory (FROM) module containing 2,097,152 words organized in a x32bit configuration. The module consists of two 1M x 16 FROM mounted on a 80-pin stackable type, single - sided, FR4printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Output enable (/OE) and write enable (/WE) can set the memory input and output. The host system can detect a program or erase operation is complete by observing the Ready Pin, or reading the DQ7(Data # Polling) and DQ6(Toggle) status bits. When FROM module is disable condition the module is becoming power standby mode, system designer can g et low-power design. All module components may be powered from a single + 3.0V DC power supply and all inputs and outputs are LVTTLcompatible.
FEATURES
w Part Identification - HMF1M32F2VC : Socket 5mm w Access time: 70, 80, 90, 120ns w High-density 4MByte design w High-reliability, low-power design w Single + 3.0V ± 0.3V power supply w All in/outputs are LVTTL-compatible w FR4-PCB design w 80-pin Designed by 40-pin Fine Pitch Connector (x 2EA) w Minimum 1,000,000 write/erase cycle w Sector erases architecture
9 10 11 /WE A19 A8 A9 A10 Vss A11 A12 A13 A14 A15 Vcc 29 30 31 32 33 34 35 36 37 38 39 40 PIN 1 2 3 4 5 6 7 8 Symbol Vcc /CE NC NC NC /RY_BY Vss /RESET
PIN ASSIGNMENT
P1
PIN 21 22 23 24 25 26 27 28 Symbol Vcc DQ15 DQ7 DQ14 DQ6 DQ13 Vss DQ5 DQ12 DQ4 DQ11 DQ3 DQ10 Vss DQ2 DQ9 DQ1 DQ8 DQ0 Vcc PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Symbol Vcc DQ16 DQ24 DQ17 DQ25 DQ18 Vss DQ26 DQ19 DQ27 DQ20 DQ28 DQ21 Vss DQ29 DQ22 DQ30 DQ23 DQ31 Vcc
P2
PIN 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 Symbol Vcc NC NC /BYTE /OE NC Vss A16 A0 A18 A17 A7 A6 Vss A5 A4 A3 A2 A1 Vcc
OPTIONS
w Timing
70ns access 80ns access 90ns access 120ns access
MARKING
-70 -80 -90 -120
12 13 14 15 16 17 18 19
w Packages
80-pin SMM F
20
URL:www.hbe.co.kr REV.2.0 (October, 2002)
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FUNCTIONAL BLOCK DIAGRAM
HMF1M32F2VC
DQ0- DQ31 20 A0 – A19
32
A0-19 /WE /OE /CE RY-BY /Reset DQ 0-15
U1
A0-19 /WE /OE /CE /RY_BY /RESET /WE /OE /CE RY-BY /Reset DQ 16-31
U2
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TRUTH TABLE
MODE STANDBY NOT SELECTED READ W RITE or ERASE NOTE: X means don’t care /OE X H L X /CE H L L L /WE X H H L /RESET Vcc±0.3V H H H
HMF1M32F2VC
DQ ( /BYTE=L ) HIGH-Z HIGH-Z DOUT DIN
POWER STANDBY ACTIVE ACTIVE ACTIVE
ABSOLUTE MAXIMUM RATINGS
PARAMETER Voltage with respect to ground all other pins Voltage with respect to ground Vcc Storage Temperature SYMBOL VIN,OUT VCC TSTG RATING -0.5V to Vcc+0.5V -0.5V to +4.0V -65oC to +150oC
Operating Temperature TA -55oC to +125 oC w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER Vcc for ± 10% device Supply Voltages Ground SYMBOL Vcc VSS MIN 2.7V 0 0 TYP. MAX 3.6V 0
DC AND OPERATING CHARACTERISTICS ( 0oC ≤ TA ≤ 70 oC )
PARAMETER Input Load Current Output Leakage Current Output High Voltage Output Low Voltage Vcc Active Read Current (1) /OE = VIH, Vcc Active Write Current (2) Vcc Standby Current Low Vcc Lock-Out Voltage Notes : 1. The Icc current listed is typically less than 2mA/MHz, with /OE at V IH. 2. Icc active while embedded algorithm (program or erase) is in progress 3. Maximum Icc current specifications are tested with Vcc=Vcc max
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TEST CONDITIONS Vcc=Vcc max, V IN= GND to Vcc Vcc=Vcc max, V OUT= GND to Vcc IOH = -2.0mA, Vcc = Vcc min IOL = 4.0mA, Vcc =Vcc min /CE = VIL, 5MHZ
SYMBOL IL1 IL0 VOH VOL
MIN
MAX ±1.0 ±1.0
UNIT µA µA V
2.4 0.45 18 32
V mA
ICC1 1MHZ ICC2 ICC3 VLKO 2.3 4 40 8 60 60 2.5 /CE = VIL, /OE=VIH /CE, /RESET=Vcc ±0.3V
mA mA V
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ERASE AND PROGRAMMING PERFORMANCE
LIMITS PARAMETER MIN. Sector Erase Time Chip Erase Time Byte Programming Time Chip Programming Time TYP. 0.7 25 9 18 300 54 MAX. 15 sec sec µs sec UNIT
HMF1M32F2VC
COMMENTS
Excludes 00H programming prior to erasure Excludes system-level overhead
TSOP CAPACITANCE
PARAMETER SYMBOL CIN COUT CIN2 PARAMETER DESCRIPTION Input Capacitance Output Capacitance Control Pin Capacitance TEST SETUP VIN = 0 VOUT = 0 VIN = 0 MIN 6 8.5 7.5 MAX 7.5 12 9 UNIT pF pF pF
Notes : Test conditions TA = 25o C, f=1.0 MHz.
AC CHARACTERISTICS
u Read Only Operations Characteristics PARAMETER SYMBOLS DESCRIPTION JEDEC STANDARD tAVAV tAVQV tELQV tGLQV tEHQZ tGHQZ tAXQX tRC tACC tCE tOE tDF tDF tQH Read Cycle Time Address to Output Delay Chip Enable to Output Delay Chip Enable to Output Delay Chip Enable to Output High-Z Output Enable to Output High-Z Output Hold Time From Addresses, /CE or /OE, Whichever Occurs First /CE = V IL /OE = VIL /OE = VIL Min Max Max Max Max Max Min TEST SETUP -70R 70 70 70 30 25 25 -80 80 80 80 30 25 25 0 -90 90 90 90 35 30 30 -120 120 120 120 35 30 30 ns ns ns ns ns ns ns Speed Options UNIT
TEST SPECIFICATIONS
TEST CONDITION Output load Output load capacitance,CL (Including jig capacitance) Input rise and full times Input pulse levels Input timing measurement reference levels Output timing measurement reference levels 30 5 0.0-3.0 1.5 1.5 70R, 80 1TTL gate 100 pF ns V V V 90, 120 UNIT
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5.0V 2.7kΩ Device Under Test CL IN3064 or Equivalent
HMF1M32F2VC
6.2kΩ
Diodes = IN3064 or Equivalent
Note : CL = 100pF including jig capacitance
u Erase/Program Operations
PARAMETER SYMBOLS DESCRIPTION JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX STANDARD tWC tAS tAH tDS tDH tOES tGHWL tELWL tWHEH tWLWH tWHWL tWHWH1 tWHWH2 tGHWL tCS tCH tWP tWPH tWHWH1 tWHWH2 tVCS W rite Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write /CE Setup Time /CE Hold Time W rite Pulse Width W rite Pulse Width High Byte Programming Operation Sector Erase Operation (Note1) Vcc set up time Min Min Min Min Min Min Min Min Min Min Min Typ Typ Min 35 35 30 9 0.7 50 45 35 45 35 0 0 0 0 0 35 50 70R 70 80 80 0 45 45 50 50 90 90 120 12 ns ns ns ns ns ns ns ns ns ns ns µs sec µs Speed Options UNIT
Notes : 1 . This does not include the preprogramming time 2 . This timing is only for Sector Protect operations
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u Erase/Program Operations
Alternate /CE Controlled Writes PARAMETER SYMBOLS DESCRIPTION JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX STANDARD tWC tAS tAH tDS tDH tOES tGHWL tELWL tWHEH tWLWH tWHWL tWHWH1 tWHWH2 tGHWL tCS tCH tWP tWPH tWHWH1 tWHWH2 W rite Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write /CE Setup Time /CE Hold Time W rite Pulse Width W rite Pulse Width High Byte Programming Operation Sector Erase Operation (Note1) Min Min Min Min Min Min Min Min Min Min Min Typ Typ 35 35 30 9 0.7 45 35 45 35 0 0 0 0 0 -70R 70 -80 80 0
HMF1M32F2VC
Speed Options UNIT -90 90 120 12 ns ns 45 45 50 50 ns ns ns ns ns ns ns 35 50 ns ns µs sec
Notes : 1. This does not include the preprogramming time 2 . This timing is only for Sector Protect operations
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HMF1M32F2VC
PACKAGE DIMENSIONS
1.30 ± 0.2 Plug (memory) Receptacle (main board)
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HMF1M32F2VC
ORDERING INFORMATION
Component Number 2EA 2EA 2EA 2EA
Part Number
Density
Org.
Package
Vcc
SPEED
HMF1M32F2VC-70 HMF1M32F2VC-80 HMF1M32F2VC-90 HMF1M32F2VC-120
4MByte 4Mbyte 4Mbyte 4Mbyte
x 32
80Pin – SMM 80Pin – SMM 80Pin – SMM 80Pin -SMM
3.3V 3.3V 3.3V 3.3V
70ns 80ns 90ns 120ns
x 32 x 32 x 32
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