HMF1M32M4V-70

HANBit HMF1M32M4V Flash-ROM Module 4MByte (1Mx32Bit), 72Pin-SIMM, 3.3V Design Part No. HMF1M32M4V GENERAL DESCRIPTION The HMF1M32M4V is a high-speed flash read only memory (FROM) module containing 2,097,152 words organized in a x32bit configuration. The module consists of four 1M x 8bit FROM mounted on a 72 -pin, single -sided, FR4-printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Four chip enable inputs, (/CE_1L, /CE_1H) are used to enable the module ’s 8 bits independently. Output enable (/OE) and write enable (/WE) can set the memory input and output. When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power design. All module components may be powered from a single + 3.3V DC power supply and all inputs and outputs are TTLcompatible. PIN ASSIGNMENT FEATURES PIN Symbol Vss /RESET DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 Vcc DQ7 /CE_1L NC(/CE_2L) DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 NC NC DQ16 PIN 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 Symbol DQ17 DQ18 DQ19 DQ20 DQ21 Vcc DQ22 DQ23 /CE_1H NC(/CE_2H ) DQ24 DQ25 DQ26 DQ27 Vss DQ28 DQ29 DQ30 DQ31 NC NC Vcc A19 /OE PIN 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 Symbol /WE A18 A17 A16 A15 A14 A13 A12 A11 A10 Vcc A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 NC(A20) NC(A21) Vss w Access time : 70, 80, 90, 120ns w High-density 4MByte design w High-reliability, low-power design w Single + 3.3V ± 0.3V power supply w Easy memory expansion w All inputs and outputs are TTL-compatible w FR4-PCB design w Low profile 72-pin SIMM w Minimum 1,000,000 write/erase cycle w Sectors erase architecture w Sector group protection w Temporary sector group unprotection 1 2 3 4 5 6 7 8 9 10 11 12 13 14 OPTIONS w Timing 70ns access 80ns access 90ns access 120ns access w Packages 72-pin SIMM MARKING -70 -80 -90 -120 15 16 17 18 19 20 21 22 M 23 24 URL:www.hbe.co.kr REV.02 (August,2002) 1 HANBit Electronics Co., Ltd. HANBit FUNCTIONAL BLOCK DIAGRAM DQ0 - DQ31 A1 – A19 A0 /CE_1L 32 21 HMF1M32M4V A0-A18 DQ15/A-1 /CE /OE /W E RY-BY /RESET DQ 0-7 U1 A0-18 DQ15/A-1 /CE_1L /CE /OE DQ 8-15 /WE RY-BY U2 /RESET A0-18 DQ15/A-1 /CE_1H /CE DQ16-23 /OE /WE RY-BY /RESET U3 A0-18 DQ15/A-1 /CE_1H /OE /CE /OE /W E RY-BY /RESET DQ24-31 /WE U4 /RESET URL:www.hbe.co.kr REV.02 (August,2002) 2 HANBit Electronics Co., Ltd. HANBit TRUTH TABLE MODE STANDBY NOT SELECTED READ W RITE or ERASE NOTE: X means don’t care /OE X H L X /CE H L L L /WE X H H L /RESET Vcc±0.3V H H H HMF1M32M4V DQ ( /BYTE=L ) HIGH-Z HIGH-Z DOUT DIN POWER STANDBY ACTIVE ACTIVE ACTIVE ABSOLUTE MAXIMUM RATINGS PARAMETER Voltage with respect to ground all other pins Voltage with respect to ground Vcc Power dissipation Storage Temperature SYMBOL VIN,OUT VCC PD TSTG RATING -0.5V to Vcc+0.5V -0.5V to +4.0V 4W -65oC to +150oC Operating Temperature TA -55oC to +125 oC w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS PARAMETER Vcc for ± 10% device Supply Voltages Ground SYMBOL Vcc VSS MIN 2.7V 0 0 TYP. MAX 3.6V 0 DC AND OPERATING CHARACTERISTICS ( 0oC ≤ TA ≤ 70 oC ) PARAMETER Input Load Current Output Leakage Current Output High Voltage Output Low Voltage Vcc Active Read Current (1) /OE = VIH, Vcc Active Write Current (2) Vcc Standby Current Low Vcc Lock-Out Voltage Notes : 1. The Icc current listed is typically less than 2mA/MHz, with /OE at V IH. /CE = VIL, /OE=VIH /CE, /RESET=Vcc ±0.3V 1MHZ ICC2 ICC3 VLKO TEST CONDITIONS Vcc=Vcc max, V IN= VSS to Vcc Vcc=Vcc max, V OUT= VSS to Vcc IOH = -2.0mA, Vcc = Vcc min IOL = 4.0mA, Vcc =Vcc min /CE = VIL, 5MHZ ICC1 8(Tpy) 60(Tpy) 0.8(Tpy) 2.3 16 120 20.0 2.5 mA µA V SYMB OL IL1 IL0 0.85 x VOH Vcc VOL 28(Tpy) 0.45 36 mA V V MIN MAX ±1.0 ±1.0 UNIT µA µA URL:www.hbe.co.kr REV.02 (August,2002) 3 HANBit Electronics Co., Ltd. HANBit 2 . Icc active while embedded algorithm (program or erase) is in progress 3. Maximum Icc current specifications are tested with Vcc=Vcc max HMF1M32M4V ERASE AND PROGRAMMING PERFORMANCE LIMITS PARAMETER MIN. Sector Erase Time Chip Erase Time Byte Programming Time Chip Programming Time TYP. 0.7 24 9 9 300 27 MAX. 15 sec sec µs sec Excludes system-level overhead Excludes 00H programming prior to erasure UNIT COMMENTS TSOP CAPACITANCE PARAMETER SYMBOL CIN COUT CIN2 PARAMETER DESCRIPTION Input Capacitance Output Capacitance Control Pin Capacitance o TEST SETUP VIN = 0 VOUT = 0 VIN = 0 TYP. 6 8.5 7.5 MAX 7.5 12 9 UNIT pF pF pF Notes : Test conditions TA = 25 C, f=1.0 MHz. AC CHARACTERISTICS u Read Only Operations Characteristics PARAMETER SYMBOLS DESCRIPTION JEDEC STANDARD tAVAV tAVQV tELQV tGLQV tEHQZ tGHQZ tAXQX tRC tACC tCE tOE tDF tDF tQH Read Cycle Time Address to Output Delay Chip Enable to Output Delay Output Enable to Output Delay Chip Enable to Output High-Z Output Enable to Output High-Z Output Hold Time From Addresses, /CE or /OE, Whichever Occurs First /CE = V IL /OE = VIL /OE = VIL Min Max Max Max Max Max Min TEST SETUP -70R 70 70 70 30 25 25 -80 80 80 80 30 25 25 0 -90 90 90 90 35 30 30 -120 120 120 120 50 30 30 ns ns ns ns ns ns ns Speed Options UNIT TEST SPECIFICATIONS TEST CONDITION Output load Output load capacitance,CL (Including jig capacitance) Input rise and fall times Input pulse levels URL:www.hbe.co.kr REV.02 (August,2002) 70R, 80 1TTL gate 30 5 0.0-3.0 90, 120 UNIT 100 pF ns V 4 HANBit Electronics Co., Ltd. HANBit Input timing measurement reference levels Output timing measurement reference levels 1.5 1.5 HMF1M32M4V V V 3.0V 2.7kΩ Device Under Test CL IN3064 or Equivalent 6.2kΩ Diodes = IN3064 or Equivalent Note : CL = 100pF including jig capacitance u Erase/Program Operations PARAMETER SYMBOLS DESCRIPTION JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX STANDARD tWC tAS tAH tDS tDH tOES tGHWL tELWL tWHEH tWLWH tWHWL tWHWH1 tWHWH2 tGHWL Write tCS tCH tWP tWPH tWHWH1 tWHWH2 tVCS /CE Setup Time /CE Hold Time W rite Pulse Width W rite Pulse Width High Byte Programming Operation Sector Erase Operation (Note1) Vcc set up time Min Min Min Min Typ Typ Min 35 35 30 9 0.7 50 0 0 35 50 ns ns ns ns µs sec µs W rite Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recovery Time Before Min Min Min Min Min Min Min 45 35 45 35 0 0 0 ns 70R 70 80 80 0 45 45 50 50 90 90 120 120 ns ns ns ns ns ns Speed Options UNIT Notes : 1 . This does not include the preprogramming time 2 . This timing is only for Sector Protect operations URL:www.hbe.co.kr REV.02 (August,2002) 5 HANBit Electronics Co., Ltd. HANBit u Erase/Program Operations Alternate /CE Controlled Writes PARAMETER SYMBOLS DESCRIPTION JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX STANDARD tWC tAS tAH tDS tDH tOES tGHWL tELWL tWHEH tWLWH tWHWL tWHWH1 tWHWH2 tGHWL tCS tCH tWP tWPH tWHWH1 tWHWH2 W rite Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recovery Time Before Write /CE Setup Time /CE Hold Time W rite Pulse Width W rite Pulse Width High Byte Programming Operation Sector Erase Operation (Note1) Min Min Min Min Min Min Min Min Min Min Min Typ Typ 35 35 45 35 45 35 -70R 70 -80 80 HMF1M32M4V Speed Options UNIT -90 90 0 45 45 0 0 0 0 0 35 30 9 0.7 50 50 50 120 120 ns ns ns ns ns ns ns ns ns ns ns µs sec Notes : 1. This does not include the preprogramming time 2 . This timing is only for Sector Protect operations URL:www.hbe.co.kr REV.02 (August,2002) 6 HANBit Electronics Co., Ltd. HANBit u READ OPERATIONS TIMING HMF1M32M4V u RESET TIMING URL:www.hbe.co.kr REV.02 (August,2002) 7 HANBit Electronics Co., Ltd. HANBit u PROGRAM OPERATIONS TIMING HMF1M32M4V u CHIP/SECTOR ERASE OPERATION TIMINGS URL:www.hbe.co.kr REV.02 (August,2002) 8 HANBit Electronics Co., Ltd. HANBit u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS) HMF1M32M4V u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS) URL:www.hbe.co.kr REV.02 (August,2002) 9 HANBit Electronics Co., Ltd. HANBit u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM HMF1M32M4V u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS URL:www.hbe.co.kr REV.02 (August,2002) 10 HANBit Electronics Co., Ltd. HANBit PACKAGE DIMENSIONS (UNIT : mm) HMF1M32M4V 0.25 mm MAX 2.54 mm MIN 1.27±0.08 1.27 Gold: 1.04 ±0.10 mm Solder: 0.914 ±0.10 mm (Solder & Gold Plating) ORDERING INFORMATION Component Number 4EA 4EA 4EA 4EA Part Number Density Org. Package Vcc SPEED HMF1M32M4V-70 HMF1M32M4V -80 HMF1M32M4V- -90 HMF1M32M4V- -120 4MByte 4MByte 4MByte 4MByte 1Mx 32bit 1Mx 32bit 1Mx 32bit 1Mx 32bit 72Pin -SIMM 72Pin -SIMM 72Pin -SIMM 72Pin -SIMM 3.3V 3.3V 3.3V 3.3V 70ns 80ns 90ns 120ns URL:www.hbe.co.kr REV.02 (August,2002) 11 HANBit Electronics Co., Ltd.