HMF1M32M8G

HANBit HMF1M32M8G FLASH-ROM MODULE 4MByte (1M x 32-Bit), 72pin-SIMM, 5V Part No. HMF1M32M8G GENERAL DESCRIPTION The HMF1M32M8G is a high-speed flash read only memory (FROM) module containing 1,048,576 words organized in a x32bit configuration. The module consists of eight 512K x 8 FROM mounted on a 72 -pin, single-sided, FR4-printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Eight chip enable inputs, (/CE_UU1, /CE_UM1, /CE_LM1, /CE_LL1, /CE_UU2, /CE_UM2, /CE_LM2, /CE_LL2) are used to enable the module ’s 4 bytes independently. Output enable (/OE) and write enable (/WE) can set the memory input and output..When FROM module is disable condition the module is becoming power standby mode, system designer can get low power design. All module components may be powered from a single +5V DC power supply and all inputs and outputs are TTL-compatible. FEATURES w Access time: 55, 70, 90 and 120ns w High-density 4MByte design w High-reliability, low-power design w Single + 5V ± 0.5V power supply w Easy memory expansion w All inputs and outputs are TTL-compatible w FR4-PCB design w Low profile 72-pin SIMM w Minimum 1,000,000 write/erase cycle w Sector erases architecture w Sector group protection w Temporary sector group unprotection PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 -55 -70 -90 -120 22 23 M 24 A17 A14 A13 18 19 20 21 120ns access w Packages 72-pin SIMM SYMBOL Vss A3 A2 A1 A0 Vcc A11 /OE A10 Vcc /CE_LL2 /CE_LL1 DQ7 DQ0 DQ1 DQ2 DQ6 DQ5 DQ4 DQ3 /WE PIN ASSIGNMENT PIN 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 SYMBOL Vcc DQ8 DQ9 DQ10 /CE_LM2 Vcc /CE_LM1 DQ15 DQ14 DQ13 DQ12 DQ11 A18 A16 Vss A6 Vcc A5 A4 Vcc /CE_UM2 /CE_UM1 DQ23 DQ16 PIN 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 SYMBOL DQ17 DQ18 DQ22 DQ21 DQ20 DQ19 Vcc A15 A12 A7 Vcc A8 A9 DQ24 DQ25 DQ26 /CE_UU2 /CE_UU1 DQ31 DQ30 DQ29 DQ28 DQ27 Vss OPTIONS w Timing 55ns access 70ns access 90ns access MARKING URL : www.hbe.co.kr REV.02(August,2002) 1 72-PIN SIMM TOP VIEW HANBit Electronics Co., Ltd. HANBit FUNCTIONAL BLOCK DIAGRAM DQ 0-DQ31 A0-A18 DQ 32 A19 HMF1M32M8G A0-18 A0-18 DQ0-7 /WE /OE /CE-LL2 A0-18 DQ0-7 /WE U1 /CE /CE-LL1 /OE U5 /CE A0-18 DQ8-15 /WE /OE A0-18 DQ8-15 /WE U2 /CE /CE-LM1 /OE /CE U6 /CE-LM2 A0-18 DQ 16-23 /WE /OE /CE-UM2 A0-18 DQ16-23 /WE U3 /CE /CE-UM1 /OE U7 /CE A0-18 /WE /WE /OE /OE DQ24-31 /WE A0-18 DQ 24-31 /WE /OE U4 /CE /OE U8 /CE /CE-UU2 /CE-UU1 TRUTH TABLE MODE STANDBY NOT SELECTED READ W RITE or ERASE NOTE: X means don’t care /OE X H L X /CE H L L L /WE X H H L DQ HIGH-Z HIGH-Z Q D POWER STANDBY ACTIVE ACTIVE ACTIVE URL : www.hbe.co.kr REV.02(August,2002) 2 HANBit Electronics Co., Ltd. HANBit ABSOLUTE MAXIMUM RATINGS PARAMETER Voltage with respect to ground all other pins Voltage with respect to ground Vcc Storage Temperature SYMBOL VIN,OUT VCC TSTG HMF1M32M8G RATING -2.0V to +7.0V -2.0V to +7.0V -65oC to +125oC Operating Temperature TA -55oC to +125 oC w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions ab ove those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS PARAMETER Vcc for ±5% device Supply Voltages Vcc for ± 10% device Supply Voltages Ground SYMBOL VCC Vcc VSS MIN 4.75V 4.5V 0 0 TYP. MAX 5.25V 5.5V 0 DC AND OPERATING CHARACTERISTICS (0oC ≤ TA ≤ 70 oC ; Vcc = 5V ± 0.5V ) PARAMETER Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage Vcc Active Current for Read(1) Vcc Active Current for Program /CE = VIL, /OE=VIH or Erase(2) Vcc Standby Current Low Vcc Lock-Out Voltage Notes: 1. The Icc current listed is typically less than 2mA/MHz, with /OE at V IH. 2. Icc active while embedded algorithm (program or erase) is in progress 3. Maximum Icc current specifications are tested with Vcc=Vcc max /CE= VIH ICC3 VLKO 3.2 1.0 4.2 mA V ICC2 40 mA TEST CONDITIONS Vcc=Vcc max, V IN= GND to Vcc Vcc=Vcc max, VOUT= GND to Vcc IOH = -2.5mA, Vcc = Vcc min IOL = 12mA, Vcc =Vcc min /CE = VIL, /OE=VIH, SYMBOL IL1 IL0 VOH VOL ICC1 2.4 0.45 12 MIN MAX ±1.0 ±1.0 UNITS µA µA V V mA URL : www.hbe.co.kr REV.02(August,2002) 3 HANBit Electronics Co., Ltd. HANBit ERASE AND PROGRAMMING PERFORMANCE LIMITS PARAMETER MIN. Sector Erase Time TYP. 1 MAX. UNIT HMF1M32M8G COMMENTS Excludes 00H programming 8 sec prior to erasure Excludes system-level overhead Excludes system-level Byte Programming Time - 7 300 µs Chip Programming Time - 3.6 10.8 sec overhead CAPACITANCE PARAMETER SYMBOL CIN COUT CIN2 PARAMETER TEST SETUP DESCRIPTION Input Capacitance Output Capacitance Control Pin Capacitance o TYP. 4 8 8 MAX 6 12 12 UNIT pF pF pF VIN = 0 VOUT = 0 VIN = 0 Notes : Test conditions TA = 25 C, f=1.0 MHz. AC CHARACTERISTICS u Read Only Operations Characteristics PARAMETER SYMBOLS JEDEC tAVAV tAVQV STANDARD tRC tACC Address to Output Delay /OE = VIL tELQV tGLQV tEHQZ tGHQZ tAXQX tCE tOE tDF tDF tQH /CE or /OE, Whichever Occurs First Chip Enable to Output Delay Chip Enable to Output Delay Chip Enable to Output High-Z Output Enable to Output High-Z Output Hold Time From Addresses, Min 0 0 ns /OE = VIL Max Max Max Max 55 30 18 18 90 35 20 20 ns ns ns ns Read Cycle Time /CE = V IL Max 55 90 ns Min 55 90 ns DESCRIPTION TEST SETUP -55 -90 UNIT Notes : Test Conditions : Output Load : 1TTL gate and Output Load Capacitance 100 pF, in case of 55ns-30pF Input rise and fall times : 5 ns , In case of 55ns-5ns Input pulse levels : 0 .45V to 2.4V, In case of 55ns- 0.0V-3.0V Timing measurement reference level URL : www.hbe.co.kr REV.02(August,2002) 4 HANBit Electronics Co., Ltd. HANBit Input : 0.8V, Incase of 55ns-1.5V Output : 2.0V, In case of 55ns-1.5V 5.0V HMF1M32M8G 2.7kΩ Device Under Test CL IN3064 or Equivalent 6.2kΩ Diodes = IN3064 or Equivalent Note : CL = 100pF including jig capacitance u Erase/Program Operations PARAMETER SYMBOLS DESCRIPTION JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX STANDARD tWC tAS tAH tDS tDH tOES tGHWL tELWL tWHEH tWLWH tWHWL tWHWH1 tWHWH2 tGHWL tCS tCH tWP tWPH tWHWH1 tWHWH2 tVCS Notes : 1. This does not include the preprogramming time 2. This timing is only for Sector Protect operations W rite Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write /CE Setup Time /CE Hold Time W rite Pulse Width W rite Pulse Width High Byte Programming Operation Sector Erase Operation (Note1) Vcc set up time Min Min Min Min Min Min Min Min Min Min Min Typ Typ Min 55 0 40 25 0 0 0 0 0 30 20 7 1 50 90 0 45 45 0 0 0 0 0 45 20 7 1 50 ns ns ns ns ns ns ns ns ns ns ns µs sec µs -55 -90 UNIT URL : www.hbe.co.kr REV.02(August,2002) 5 HANBit Electronics Co., Ltd. HANBit u Erase/Program Operations Alternate /CE Controlled Writes PARAMETER SYMBOLS DESCRIPTION JEDEC tAVAV tAVEL tELAX tDVEH tEHDX STANDARD tWC tAS tAH tDS tDH tOES tGHEL tWLEL tEHWH tELEH tEHEL tWHWH1 tWHWH2 tGHEL tWS tWH tCP tCPH tWHWH1 tWHWH2 W rite Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write /WE Setup Time /WE Hold Time /CE Pulse Width /CE Pulse Width High Byte Programming Operation Sector Erase Operation (Note) Min Min Min Min Min Min Min Min Min Min Min Typ Typ 55 0 40 25 0 0 0 0 0 30 20 7 1 -55 HMF1M32M8G -90 90 0 45 45 0 0 0 0 0 45 20 7 1 UNIT ns ns ns ns ns ns ns ns ns ns ns µs sec Notes : This does not include the preprogramming time. URL : www.hbe.co.kr REV.02(August,2002) 6 HANBit Electronics Co., Ltd. HANBit u READ OPERATIONS TIMING HMF1M32M8G u RESET TIMING URL : www.hbe.co.kr REV.02(August,2002) 7 HANBit Electronics Co., Ltd. HANBit u PROGRAM OPERATIONS TIMING HMF1M32M8G u CHIP/SECTOR ERASE OPERATION TIMINGS URL : www.hbe.co.kr REV.02(August,2002) 8 HANBit Electronics Co., Ltd. HANBit u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS) HMF1M32M8G u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS) URL : www.hbe.co.kr REV.02(August,2002) 9 HANBit Electronics Co., Ltd. HANBit u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM HMF1M32M8G u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS URL : www.hbe.co.kr REV.02(August,2002) 10 HANBit Electronics Co., Ltd. HANBit PACKAGE DIMENSIONS HMF1M32M8G 108mm 3.2 mm 21.59 mm 6.35 mm 1 72 2.03 mm 1.02 mm 6.35 mm 95.25 mm 1.27 mm 3.34 mm 2.54 mm 0.25 mm MAX M IN 1.29±0.08 mm Gold: 1.04±0.10 mm 1.27 Solder: 0.914±0.10 mm (Solder & Gold Plating) ORDERING INFORMATION Part Number Density Org. Package Component Number 8EA 8EA 8EA 8EA Vcc SPEED HMF1M32M8G-55 HMF1M32M8G-70 HMF1M32M8G-90 HMF1M32M8G-120 4MByte 4MByte 4MByte 4MByte 1M×32bit 1M×32bit 1M×32bit 1M×32bit 72pin-SIMM 72pin-SIMM 72pin-SIMM 72pin-SIMM 5.0V 5.0V 5.0V 5.0V 55ns 70ns 90ns 120ns URL : www.hbe.co.kr REV.02(August,2002) 11 HANBit Electronics Co., Ltd.