HMF1M32M8S

HANBit HMF1M32M8S FLASH-ROM MODULE 4MByte (1M x 32-Bit), 72pin-SIMM, 5V Part No. HMF1M32M8S (Switching for write enable/disable) GENERAL DESCRIPTION The HMF1M32M8S is a high-speed flash read only memory (FROM) module containing 1,048,576 words organized in a x32bit configuration. The module consists of eight 512K x 8 FROM mounted on a 72 -pin, both-sided, FR4-printed circuit board.In order to write control, the HMF1M32M8S provides Write Enable and Write Disable selection by SMT switch. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Eight chip enable inputs, (/CE-UU1, /CE_UM1, /CE_LM1, /CE_LL1, /CE_UU2, /CE_UM2, /CE_LM2, /CE_LL2) are used to enable the module ’s 4 bytes independently. Output enable (/OE) and write enable (/WE) can set the memory input and output .. When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power design. All module components may be powered from a single +5V DC power supply and all inputs and outputs are TTL compatible FEATURES w Access time: 70, 90 and 120ns wSwitching for write enable and disable. w High-density 4MByte design w High-reliability, low-power design w Single + 5V ± 0.5V power supply w Easy memory expansion w All inputs and outputs are TTL-compatible w FR4-PCB design w Low profile 72-pin SIMM w Minimum 100,000 write/erase cycle w Sector erases architecture w Sector group protection w Temporary sector group unprotection PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 -70 -90 -120 18 SYMBOL VSS A3 A2 A1 A0 VCC A11 /OE A10 VCC /CE-LL2 /CE-LL1 DQ7 DQ0 DQ1 DQ2 DQ6 DQ5 PIN 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 PIN ASSIGNMENT SYMBOL DQ4 DQ3 /WE A17 A14 A13 VCC DQ8 DQ9 DQ10 /CE-LM2 VCC /CE-LM1 DQ15 DQ14 DQ13 DQ12 DQ11 PIN 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 SYMBOL A18 A16 VSS A6 VCC A5 A4 VCC /CE-UM2 /CE-UM1 DQ23 DQ16 DQ17 DQ18 DQ22 DQ21 DQ20 DQ19 PIN 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 SYMBOL VCC A15 A12 A7 VCC A8 A9 DQ24 DQ25 DQ26 /CE-UU2 /CE-UU1 DQ31 DQ30 DQ29 DQ28 DQ27 VSS OPTIONS w Timing 70ns access 90ns access 120ns access w Packages 72-pin SIMM MARKING SIMM TOP VIEW M URL: www.hbe.co.kr REV.02(August,2002) 1 HANBit Electronics Co.,Ltd. HANBit FUNCTIONAL BLOCK DIAGRAM HMF1M32M8S DQ 0-DQ31 A0-A18 DQ 32 A19 A0-18 A0-18 DQ0-7 /WE /OE /CE-LL2 A0-18 DQ0-7 /WE U1 /CE /CE-LL1 /OE U5 /CE A0-18 DQ8-15 /WE /OE A0-18 DQ8-15 /WE U2 /CE /CE-LM1 /OE /CE U6 /CE-LM2 A0-18 DQ 16-23 /WE /OE /CE-UM2 A0-18 DQ16-23 /WE U3 /CE /CE-UM1 /OE U7 /CE A0-18 /WE /WE /OE /OE DQ24-31 /WE /OE A0-18 DQ 24-31 /WE /OE U4 /CE U8 /CE /CE-UU2 /CE-UU1 URL: www.hbe.co.kr REV.02(August,2002) 2 HANBit Electronics Co.,Ltd. HANBit HMF1M32M8S TRUTH TABLE MODE STANDBY NOT SELECTED READ W RITE NOTE: X means don ’t care /OE X H L H /CE H L L L /WE X H H L DQ HIGH-Z HIGH-Z Q D POWER STANDBY ACTIVE ACTIVE ACTIVE ABSOLUTE MAXIMUM RATINGS RATING Ambient Operating Temperature Storage Temperature Applied Input Voltage Applied Output Voltage VALUE 0 oC to 70 oC -65 oC to 125 oC -0.5V to 7.0V -0. 5V to 7.0V VCC to Ground Potential A9 & /OE -0.2V to 7.0V -0.2V to 12.5V wNOTICE: Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended period may affect reliability. Specifications contained within the following tables are subject to change. RECOMMENDED DC OPERATING CONDITIONS PARAMETER Vcc for ±5% device Supply Voltages Vcc for ± 10% device Supply Voltages Ground SYMBOL VCC Vcc VSS MIN 4.75V 4.5V 0 0 TYP. MAX 5.25V 5.5V 0 DC AND OPERATING CHARACTERISTICS (0oC ≤ TA ≤ 70 oC ; Vcc = 5V ± 0.5V ) PARAMETER Input Leakage Current Output Leakage Current Input High Voltage TEST CONDITIONS Vcc=Vcc max, V IN= GND to Vcc Vcc=Vcc max, VOUT= GND to Vcc SYMBOL IL1 IL0 VIH 0.7x VCC MIN MAX ±1.0 ±10 VCC + 0.3 UNITS µA µA V URL: www.hbe.co.kr REV.02(August,2002) 3 HANBit Electronics Co.,Ltd. HANBit Input Low Voltage Output High Voltage Output Low Voltage Vcc Active Current for Read Vcc Active Current for Program Vcc Active Current for Erase Vcc Standby Current Notes IOH = -2.5mA, Vcc = Vcc min IOL = 12mA, Vcc =Vcc min /CE=VIL, /OE=VIH /CE=VIL, /OE=VIH /CE=VIL, /OE=VIH /CE= V1H VIL VOH VOL ICC1 ICC2 ICC2 Icc3 HMF1M32M8S -0.5 2.4 0.45 30 40 40 5 0.8 V V V mA mA mA mA 1.V1L min.=-1.0V for pulse width is equal to or less than 50ns. V1L min. =-2.0V for pulse width is equal to or less than 20 2.V1H max. =VCC+1.5V for pulse width is equal to or less than 20ns. If V 1H is over the specified maximum value, read operation cannot be guaranteed. SWITCHING TEST CIRCUITS 5.0V 2.7kΩ Device Under Test CL 6.2kΩ Diodes = IN3064 or Equivalent Note : CL = 100pF including jig capacitance AC CHARACTERISTICS u Read Only Operations Characteristics SPEED PARAMETER tRC tACC tCE tOE tDF tOEH DESCRIPTION Read Cycle Time Address Access time Chip Enable to Access time Output Enable time Chip Enable to Output High-Z Output Enable Hold Time - 70 70 70 70 30 20 0 -90 90 90 90 35 20 0 -120 120 120 120 50 30 0 UNIT ns ns ns ns ns ns URL: www.hbe.co.kr REV.02(August,2002) 4 HANBit Electronics Co.,Ltd. HANBit tOH Output Hold Time From Addresses, /CE or /OE 0 0 HMF1M32M8S 0 ns u Erase/Program Operations PARAMETER tWC tAS tAH tDS tDH tOES tGHWL tCS tCH tWP tWPH tWHWH1 t W HWH2 tVCS DESCRIPTION W rite Cycle Time (Note 1) Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write /CE Setup Time /CE Hold Time W rite Pulse Width W rite Pulse Width High Byte Programming Operation Sector Erase Operation Vcc set up time (Note 1) -70 70 0 45 30 0 0 0 0 0 35 20 7 1 50 -90 90 0 45 45 0 0 0 0 0 45 20 7 1 50 -120 120 0 50 50 0 0 0 0 0 50 20 7 1 50 UNIT ns ns ns ns ns ns ns ns ns ns ns µs sec µs Notes : : 1. Not 100% tested URL: www.hbe.co.kr REV.02(August,2002) 5 HANBit Electronics Co.,Ltd. HANBit u READ OPERATIONS TIMING HMF1M32M8S u RESET TIMING URL: www.hbe.co.kr REV.02(August,2002) 6 HANBit Electronics Co.,Ltd. HANBit u PROGRAM OPERATIONS TIMING HMF1M32M8S u CHIP/SECTOR ERASE OPERATION TIMINGS URL: www.hbe.co.kr REV.02(August,2002) 7 HANBit Electronics Co.,Ltd. HANBit u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS) HMF1M32M8S u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS) URL: www.hbe.co.kr REV.02(August,2002) 8 HANBit Electronics Co.,Ltd. HANBit u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM HMF1M32M8S u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS URL: www.hbe.co.kr REV.02(August,2002) 9 HANBit Electronics Co.,Ltd. HANBit PACKAGE DIMMENSIONS HMF1M32M8S 2.54 mm MIN 0.25 mm MAX 1.27±0.08 1.27 Gold: 1.04±0.10 mm Solder: 0.914 ±0.10 mm (Solder & Gold Plating) ORDERING INFORMATION Component Number 8EA 8EA 8EA Part Number Density Org. Package Vcc SPEED HMF1M32M8S-70 HMF1M32M8S-90 HMF1M32M8S-120 4MByte 4MByte 4MByte 1MX 32bit 1MX 32bit 1MX 32bit 72 Pin-SIMM 72 Pin-SIMM 72 Pin-SIMM 5.0V 5.0V 5.0V 70ns 90ns 120ns URL: www.hbe.co.kr REV.02(August,2002) 10 HANBit Electronics Co.,Ltd.