HMF25664F4V-50

HANBit HMF25664F4V FLASH-ROM MODULE 2MByte (256K x 64-Bit) ,120PIN SMM,3.3V Part No. HMF25664F4V GENERAL DESCRIPTION The HMF25664F4V is a high-speed flash read only memory (FROM) module containing 262,144 words organized in an x64bit configuration. The module consists of four 256K x 16 FROM mounted on a 120-pin, SMM connector FR4-printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Output enable (/OE) and write enable (/WE) can set the memory input and output. The host system can detect a program or erase operation is complete by observing the Ready Pin, or reading the DQ7(Data # Polling) and DQ6(Toggle) status bits. When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power design. All module components may be powered from a single + 3.0V DC power supply and all inputs and outputs are LVTTLcompatible FEATURES w Access time : 50, 55, 70, 90 and 120ns w High-density 2MByte design w High-reliability, low-power design w Single + 3V ± 0.3V power supply w Easy memory expansion w Hardware reset pin(RESET#) w FR4-PCB design w 120-Pin Designed by 60-Pin Fine Pitch Connector P1,P2 w Minimum 1,000,000 write cycle guarantee per sector w 20-year data retention at 125 oC w Flexible sector architecture w Embedded algorithms w Erase suspend / Erase resume OPTIONS w Timing 50ns access 55ns access 70ns access 90ns access 120ns access w Packages 120-pin SMM MARKING -50 -55 -70 -90 -120 F URL: www.hbe.co.kr REV.02(August,2002) 1 HANbit Electronics Co., Ltd. HANBit HMF25664F4V PIN ASSIGNMENT P1 PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 Symbol Vcc DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 Vcc DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 Vcc A1 A2 A3 A4 A5 Vcc A6 A7 A8 A9 Vcc PIN 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 Symbol Vss DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 Vss DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 Vss A10 A11 A12 A13 A14 Vss A15 A17 NC NC Vss PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 Symbol Vcc DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 Vcc DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 Vcc A20 A0 A16 /WE1 /WE2 Vcc /OE /RESET /WE0 /RY_BY Vcc P2 PIN 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 Symbol Vss DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 Vss DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63 Vss NC /BANK0 Vss /BYTE /WE3 Vss NC NC NC NC Vss URL: www.hbe.co.kr REV.02(August,2002) 2 HANbit Electronics Co., Ltd. HANBit FUNCTIONAL BLOCK DIAGRAM HMF25664F4V DQ0 – DQ63 A0 – A17 64 18 A(0-17) DQ(0-15) /WE0 /WE /BYTE /OE /CE RY-BY /Reset U2 A(0-17) DQ(16-31) /WE1 /WE /OE /CE RY-BY /Reset /BYTE U3 A(0-17) DQ(32-47) /WE2 /WE /OE /BYTE /CE RY-BY /Reset U1 A(0-17) DQ(48-63) /WE3 /OE /WE /BYTE /OE /CE RY-BY /BANK0 RY_/BY /RESET /BYTE U4 /Reset URL: www.hbe.co.kr REV.02(August,2002) 3 HANbit Electronics Co., Ltd. HANBit TRUTH TABLE HMF25664F4V DQ0-DQ15 MODE STANDBY NOT SELECTED READ W RITE or ERASE NOTE: X means don’t care /OE X H L H /CE Vcc± 0.3 L L L /WE X H H L /RESET /BYTE=V IH Vcc± 0.3 H H H HIGH-Z HIGH-Z Dout Din ABSOLUTE MAXIMUM RATINGS PARAMETER Voltage with respect to ground all other pins Voltage with respect to ground Vcc Storage Temperature SYMBOL VIN,OUT VCC TSTG RATING -0.5V to VCC+0.5V -0.5V to +4.0V -65oC to +150oC Operating Temperature TA -55Oc to +125 oC w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the devic e at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS PARAMETER Vcc for Regulated Voltages Range Vcc for Full Voltages Range Ground SYMBOL VCC Vcc VSS MIN 3.0V 2.7V 0 0 TYP. MAX 3.6V 3.6V 0 DC AND OPERATING CHARACTERISTICS (0oC ≤ TA ≤ 70 oC ; Vcc = 5V ± 0.5V ) PARAMETER Input Load Current Vcc = Vcc max Output Leakage Current Vcc=Vcc max, V OUT= VSS to Vcc IOH = -2.0mA, Vcc = Vcc min Output High Voltage IOH = -100uA, Vcc = Vcc min Output Low Voltage Vcc Active Current for Read(1) Vcc Active Current for Program or Erase(2,3) Vcc Standby Current(3) IOL = 4.0mA, Vcc =Vcc min /CE = VIL, /OE=VIH, /CE = VIL, /OE=VIH /CE,/RESET= VCC ±0.3V VOH2 VOL ICC1 ICC2 ICC3 28 60 0.8 IL0 0.85 x VOH1 VCC VCC – 0.4 0.45 48 120 20 2.5 V mA mA mA V V TEST CONDITIONS VIN=VSS to Vcc IL1 SYMBOL MIN MAX ±1.0 ±1.0 UNITS µA µA Low Vcc Lock-Out Voltage VLKO 2.3 Notes: 1. The Icc current listed is typically less than 2mA/MHz, with /OE at VIH. typical V CC is 3.0V. 2. Icc active while embedded algorithm (program or erase) is in progress URL: www.hbe.co.kr REV.02(August,2002) 4 HANbit Electronics Co., Ltd. HANBit 3. Maximum Icc current specifications are tested with Vcc=Vcc max HMF25664F4V ERASE AND PROGRAMMING PERFORMANCE LIMITS PARAMETER MIN. Sector Erase Time Byte Programming Time Chip Programming Time TYP. 0.7 9 11 MAX. 15 300 Sec µs Sec Excludes 00H programming prior to erasure Excludes system-level overhead Excludes system-level overhead UNIT COMMENTS CAPACITANCE PARAMETER SYMBOL CIN COUT CIN2 PARAMETER DESCRIPTION Input Capacitance Output Capacitance Control Pin Capacitance o TEST SETUP VIN = 0 VOUT = 0 VIN = 0 TYP. 6 8.5 7.5 MAX 7.5 12 9 UNIT pF pF pF Notes : Test conditions TA = 25 C, f=1.0 MHz. AC CHARACTERISTICS u Read Only Operations Characteristics PARAMETER SYMBOLS JEDEC TAVAV TAVQV TELQV TGLQV TEHQZ TGHQZ TAXQX STANDARD tRC tACC tCE tOE tDF tDF tQH Read Cycle Time Address to Output Delay Chip Enable to Output Delay Chip Enable to Output Delay Chip Enable to Output High -Z Output Enable to Output High-Z Output Hold Time From Addresses, /CE or /OE, Whichever Occurs First /CE = VIL /OE = VIL /OE = VIL Min Max Max Max Max Max Min Speed Options DESCRIPTION TEST SETUP 50R 50 50 50 30 25 25 0 55R 55 55 55 30 25 25 0 70 70 70 70 30 25 25 0 90 90 90 90 35 30 30 0 120 120 120 120 50 30 30 0 ns ns ns ns ns ns ns UNIT Notes : Test Conditions Output Load : 1TTL gate Output Load Capacitance - 50R,55R,70 -30 pF - 90,120 -30pF Input rise and fall times : 5 ns Input pulse levels : 0.0V-3.0V Timing measurement reference level - Input : 1.5V - Output :1.5V URL: www.hbe.co.kr REV.02(August,2002) 5 HANbit Electronics Co., Ltd. HANBit HMF25664F4V 3.3V 2.7kΩ Device Under Test CL IN3064 or Equivalent 6.2kΩ Diodes = IN3064 or Equivalent Note : CL = 100pF including jig capacitance u Erase/Program Operations PARAMETER SYMBOLS JEDEC TAVAV TAVWL TWLAX TDVWH TWHDX STANDARD tWC tAS tAH tDS tDH tOES TGHWL TELWL TWHEH TWLWH tWHWL tWHWH1 tWHWH2 tGHWL tCS tCH tWP tWPH tWHWH1 tWHWH2 tVCS W rite Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before write /CE Setup Time /CE Hold Time W rite Pulse Width W rite Pulse Width High Byte Programming Operation Sector Erase Operation (Note1) Vcc set up time Min Min Min Min Min Min Min Min Min Min Min Typ Typ Min 35 35 45 45 45 45 Speed Options DESCRIPTION 50R 50 55R 55 70 70 0 45 45 0 0 0 0 0 35 30 9 0.7 50 35 50 45 45 50 50 90 90 120 120 ns ns ns ns ns ns ns ns ns ns ns µs sec µs UNIT Notes : 1. This does not include the preprogramming time 2. This timing is only for Sector Protect operations URL: www.hbe.co.kr REV.02(August,2002) 6 HANbit Electronics Co., Ltd. HANBit u Erase/Program Operations Alternate /CE Controlled Writes PARAMETER SYMBOLS DESCRIPTION JEDEC tAVAV tAVEL tELAX tDVEH tEHDX STANDARD tWC tAS tAH tDS tDH tOES tGHEL tWLEL tEHWH tELEH tEHEL tWHWH1 tWHWH2 tGHEL tWS tWH tCP tCPH tWHWH1 tWHWH2 W rite Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write /WE Setup Time /WE Hold Time /CE Pulse Width /CE Pulse Width High Byte Programming Operation Sector Erase Operation (Note) Min Min Min Min Min Min Min Min Min Min Min Typ Typ 35 35 45 35 45 35 50R 50 55R 55 HMF25664F4V SPEED OPTION 70 70 0 45 35 0 0 0 0 0 35 30 9 0.7 35 50 45 45 50 50 90 90 120 120 UNIT ns ns ns ns ns ns ns ns ns ns ns µs sec Notes : This does not include the preprogramming time. u READ OPERATIONS TIMING URL: www.hbe.co.kr REV.02(August,2002) 7 HANbit Electronics Co., Ltd. HANBit u RESET TIMING HMF25664F4V u PROGRAM OPERATIONS TIMING URL: www.hbe.co.kr REV.02(August,2002) 8 HANbit Electronics Co., Ltd. HANBit u CHIP/SECTOR ERASE OPERATION TIMINGS HMF25664F4V u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS) URL: www.hbe.co.kr REV.02(August,2002) 9 HANbit Electronics Co., Ltd. HANBit u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS) HMF25664F4V u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM URL: www.hbe.co.kr REV.02(August,2002) 10 HANbit Electronics Co., Ltd. HANBit u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS HMF25664F4V URL: www.hbe.co.kr REV.02(August,2002) 11 HANbit Electronics Co., Ltd. HANBit PACKAGE DIMMENSIONS ± 0.5 ± 0.5 HMF25664F4V 30.00± 0.5 ± 0.5 1.3±0.10 mm ORDERING INFORMATION Component Number 4EA 4EA 4EA 4EA 4EA Part Number Density Org. Package Vcc SPEED HMF25664F4V-50 HMF25664F4V-55 HMF25664F4V-70 HMF25664F4V-90 HMF25664F4V-120 2MByte 2MByte 2MByte 2MByte 2MByte X 64 120 Pin-SMM 120 Pin-SMM 120 Pin-SMM 120 Pin-SMM 120 Pin-SMM 3.3V 3.3V 3.3V 3.3V 3.3V 50ns 55ns 70ns 90ns 120ns X 64 X 64 X 64 X 64 URL: www.hbe.co.kr REV.02(August,2002) 12 HANbit Electronics Co., Ltd.