HMF2M32F4V-90

HANBit HMF2M32F4V Flash-ROM Module 8MByte (2Mx32Bit), 80Pin-SMM, 3.3V Design Part No. HMF2M32F4V GENERAL DESCRIPTION The HMF2M32F4V is a high-speed flash read only memory (FROM) module containing 2,097,152 words organized in a x32bit configuration. The module consists of four 1M x 16 FROM mounted on a 80-pin stackable type, double - sided, FR4printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Output enable (/OE) and write enable (/WE) can set the memory input and output. The host system can detect a program or erase operation is complete by observing the Ready Pin, or reading the DQ7(Data # Polling) and DQ6(Toggle) status bits. When FROM module is disable condition the module is becoming power standby mode, system designer can ge t low-power design. All module components may be powered from a single + 3.0V DC power supply and all inputs and outputs are LVTTLcompatible. FEATURES w Part Identification - HMF2M32F4V : Socket 5mm w Access time: 70, 80, 90, 120ns w High-density 8MByte design w High-reliability, low-power design w Single + 3.0V ± 0.5V power supply w All in/outputs are LVTTL-compatible w FR4-PCB design w 80-pin Designed by 40-pin Fine Pitch Connector (x 2EA) w Minimum 1,000,000 write/erase cycle w Sector erases architecture 9 10 11 /WE A19 A8 A9 A10 Vss A11 A12 A13 A14 A15 Vcc 29 30 31 32 33 34 35 36 37 38 39 40 PIN 1 2 3 4 5 6 7 8 Symbol Vcc NC NC NC A20 /RY_BY Vss /RESET P1 PIN 21 22 23 24 25 26 27 28 PIN ASSIGNMENT P2 Symbol Vcc DQ15 DQ7 DQ14 DQ6 DQ13 Vss DQ5 DQ12 DQ4 DQ11 DQ3 DQ10 Vss DQ2 DQ9 DQ1 DQ8 DQ0 Vcc PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Symbol Vcc DQ16 DQ24 DQ17 DQ25 DQ18 Vss DQ26 DQ19 DQ27 DQ20 DQ28 DQ21 Vss DQ29 DQ22 DQ30 DQ23 DQ31 Vcc PIN 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 Symbol Vcc NC NC /BYTE /OE /CE Vss A16 A0 A18 A17 A7 A6 Vss A5 A4 A3 A2 A1 Vcc OPTIONS w Timing 70ns access 80ns access 90ns access 120ns access w Packages 80-pin SMM MARKING -70 -80 -90 -120 12 13 14 15 16 17 18 19 F 20 www.hbe.co.kr REV.02(August,2002). 1 HANBit Electronics Co., Ltd HANBit FUNCTIONAL BLOCK DIAGRAM HMF2M32F4V DQ0 - DQ31 A0 – A19 20 32 A0-19 /WE /OE /CE RY-BY /Reset DQ 0-15 U1 A0-19 /WE /OE /CE0 /CE RY-BY /Reset DQ 15-31 U2 A0-19 /WE /OE /CE RY-BY /Reset DQ 0-15 U3 A0-19 /WE /OE /CE1 /RY_BY /RESET /WE /OE /CE RY-BY /Reset DQ 15-31 U4 www.hbe.co.kr REV.02(August,2002). 2 HANBit Electronics Co., Ltd HANBit TRUTH TABLE MODE STANDBY NOT SELECTED READ W RITE or ERASE NOTE: X means don’t care /OE X H L X /CE H L L L /WE X H H L /RESET Vcc±0.3V H H H HMF2M32F4V DQ ( /BYTE=L ) HIGH-Z HIGH-Z DOUT DIN POWER STANDBY ACTIVE ACTIVE ACTIVE ABSOLUTE MAXIMUM RATINGS PARAMETER Voltage with respect to ground all other pins Voltage with respect to ground Vcc Storage Temperature SYMBOL VIN,OUT VCC TSTG RATING -0.5V to Vcc+0.5V -0.5V to +4.0V -65oC to +150oC Operating Temperature TA -55oC to +125 oC w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS PARAMETER Vcc for ± 10% device Supply Voltages Ground SYMBOL Vcc VSS MIN 2.7V 0 0 TYP. MAX 3.6V 0 DC AND OPERATING CHARACTERISTICS ( 0oC ≤ TA ≤ 70 oC ) PARAMETER Input Load Current Output Leakage Current Output High Voltage Output Low Voltage Vcc Active Read Current (1) /OE = VIH, Vcc Active Write Current (2) Vcc Standby Current Low Vcc Lock-Out Voltage Notes : 1. The Icc current listed is typically less than 2mA/MHz, with /OE at V IH. 2. Icc active while embedded algorithm (program or erase) is in progress 3. Maximum Icc current specifications are tested with Vcc=Vcc max /CE = VIL, /OE=VIH /CE, /RESET=Vcc ±0.3V 1MHZ ICC2 ICC3 VLKO 2.3 TEST CONDITIONS Vcc=Vcc max, V IN= GND to Vcc Vcc=Vcc max, V OUT= GND to Vcc IOH = -2.0mA, Vcc = Vcc min IOL = 4.0mA, Vcc =Vcc min /CE = VIL, 5MHZ ICC1 4 40 8 60 60 2.5 mA mA V SYMBOL IL1 IL0 VOH VOL 18 2.4 0.45 32 mA MIN MAX ±1.0 ±1.0 UNIT µA µA V V www.hbe.co.kr REV.02(August,2002). 3 HANBit Electronics Co., Ltd HANBit ERASE AND PROGRAMMING PERFORMANCE PARAMETER MIN. Sector Erase Time Chip Erase Time Byte Programming Time Chip Programming Time LIMITS TYP. 0.7 25 9 18 300 54 MAX. 15 sec sec µs sec UNIT HMF2M32F4V COMMENTS Excludes 00H programming prior to erasure Excludes system-level overhead TSOP CAPACITANCE PARAMETER SYMBOL CIN COUT CIN2 PARAMETER DESCRIPTION Input Capacitance Output Capacitance Control Pin Capacitance TEST SETUP VIN = 0 VOUT = 0 VIN = 0 MIN 6 8.5 7.5 MAX 7.5 12 9 UNIT pF pF pF Notes : Test conditions TA = 25o C, f=1.0 MHz. AC CHARACTERISTICS u Read Only Operations Characteristics PARAMETER SYMBOLS DESCRIPTION JEDEC STANDARD tAVAV tAVQV tELQV tGLQV tEHQZ tGHQZ tAXQX tRC tACC tCE tOE tDF tDF tQH Read Cycle Time Address to Output Delay Chip Enable to Output Delay Chip Enable to Output Delay Chip Enable to Output High-Z Output Enable to Output High-Z Output Hold Time From Addresses, /CE or /OE, Whichever Occurs First /CE = V IL /OE = VIL /OE = VIL Min Max Max Max Max Max Min TEST SETUP -70R 70 70 70 30 25 25 -80 80 80 80 30 25 25 0 -90 90 90 90 35 30 30 -120 120 120 120 35 30 30 ns ns ns ns ns ns ns Speed Options UNIT TEST SPECIFICATIONS TEST CONDITION Output load Output load capacitance,CL (Including jig capacitance) Input rise and full times Input pulse levels Input timing measurement reference levels Output timing measurement reference levels 30 5 0.0-3.0 1.5 1.5 70R, 80 1TTL gate 100 pF ns V V V 90, 120 UNIT www.hbe.co.kr REV.02(August,2002). 4 HANBit Electronics Co., Ltd HANBit 5.0V HMF2M32F4V 2.7kΩ Device Under Test CL IN3064 or Equivalent 6.2kΩ Diodes = IN3064 or Equivalent Note : CL = 100pF including jig capacitance u Erase/Program Operations PARAMETER SYMBOLS DESCRIPTION JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX STANDARD tWC tAS tAH tDS tDH tOES tGHWL tELWL tWHEH tWLWH tWHWL tWHWH1 tWHWH2 tGHWL tCS tCH tWP tWPH tWHWH1 tWHWH2 tVCS W rite Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write /CE Setup Time /CE Hold Time W rite Pulse Width W rite Pulse Width High Byte Programming Operation Sector Erase Operation (Note1) Vcc set up time Min Min Min Min Min Min Min Min Min Min Min Typ Typ Min 35 35 30 9 0.7 50 45 35 45 35 0 0 0 0 0 35 50 70R 70 80 80 0 45 45 50 50 90 90 120 12 ns ns ns ns ns ns ns ns ns ns ns µs sec µs Speed Options UNIT Notes : 1 . This does not include the preprogramming time 2 . This timing is only for Sector Protect operations www.hbe.co.kr REV.02(August,2002). 5 HANBit Electronics Co., Ltd HANBit u Erase/Program Operations Alternate /CE Controlled Writes PARAMETER SYMBOLS DESCRIPTION JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX STANDARD tWC tAS tAH tDS tDH tOES tGHWL tELWL tWHEH tWLWH tWHWL tWHWH1 tWHWH2 tGHWL tCS tCH tWP tWPH tWHWH1 tWHWH2 W rite Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write /CE Setup Time /CE Hold Time W rite Pulse Width W rite Pulse Width High Byte Programming Operation Sector Erase Operation (Note1) Min Min Min Min Min Min Min Min Min Min Min Typ Typ 35 35 30 9 0.7 45 35 45 35 0 0 0 0 0 -70R 70 -80 80 0 HMF2M32F4V Speed Options UNIT -90 90 120 12 ns ns 45 45 50 50 ns ns ns ns ns ns ns 35 50 ns ns µs sec Notes : 1. This does not include the preprogramming time 2 . This timing is only for Sector Protect operations u READ OPERATIONS TIMING www.hbe.co.kr REV.02(August,2002). 6 HANBit Electronics Co., Ltd HANBit u RESET TIMING HMF2M32F4V u PROGRAM OPERATIONS TIMING Alternate /WE Controlled Writes www.hbe.co.kr REV.02(August,2002). 7 HANBit Electronics Co., Ltd HANBit Alternate /CE Controlled Writes HMF2M32F4V u CHIP/BLOCK ERASE OPERATION TIMINGS www.hbe.co.kr REV.02(August,2002). 8 HANBit Electronics Co., Ltd HANBit HMF2M32F4V u DATA# POLLING TIMES DURING INTERNAL ROUTINE OPERATION u RY_ /BY TIMEING DURING ERASE / PROGRAM OPERATION www.hbe.co.kr REV.02(August,2002). 9 HANBit Electronics Co., Ltd HANBit u TOGGLE# BIT DURING INTERNAL ROUTINE OPERATION HMF2M32F4V www.hbe.co.kr REV.02(August,2002). 10 HANBit Electronics Co., Ltd HANBit PACKAGE DIMENSIONS HMF2M32F4V www.hbe.co.kr REV.02(August,2002). 11 HANBit Electronics Co., Ltd HANBit HMF2M32F4V ORDERING INFORMATION Component Number 4EA 4EA 4EA 4EA Part Number Density Org. Package Vcc SPEED HMF2M32F4V-70 HMF2M32F4V-80 HMF2M32F4V-90 HMF2M32F4V-120 8MByte 8MByte 8MByte 8MByte 2Mx 32 80Pin -SMM 80Pin -SMM 80Pin -SMM 80Pin -SMM 3.3V 3.3V 3.3V 3.3V 70ns 80ns 90ns 120ns 2Mx 32 2Mx 32 2Mx 32 www.hbe.co.kr REV.02(August,2002). 12 HANBit Electronics Co., Ltd