HMF2M64F8VS-100

HANBit HMF2M64F8VS FLASH-ROM MODULE 16MByte (2M x 64-Bit) ,120PIN SMM,3.3V Part No. HMF2M64F8VS GENERAL DESCRIPTION The HMF2M64F8VS is a high-speed flash read only memory (FROM) module containing 2,048,000 words organized in an x64bit configuration. The module consists of eight 2M x 8 FROM mounted on a 120-pin, MMC connector FR4-printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Output enable (/OE) and write enable (/WE) can set the memory input and output. The host system can detect a program or erase operation is complete by observing the Ready Pin, or reading the DQ7(Data # Polling) and DQ6(Toggle) status bits. When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power design. All module components may be powered from a single + 3.0V DC power supply and all inputs and outputs are LVTTLcompatible FEATURES w Access time : 80, 90 and 120ns w High-density 16MByte design w High-reliability, low-power design w Single + 3V ± 0.3V power supply w Easy memory expansion w Hardware reset pin(RESET#) w FR4-PCB design w 100-Pin Designed 50-Pin Fine Pitch SMM Connector P1,P2 w Minimum 1,000,000 write cycle guarantee per sector w 20-year data retention at 125 oC w Flexible sector architecture w Embedded algorithms w Erase suspend / Erase resume w The used device is 2Mx8bit , K8D1616UBM from SEC OPTIONS w Timing 90ns access 100ns access 120ns access w Packages 120-pin SMM MARKING -90 -100 -120 F URL :www.hbe.co.kr REV.02(August,2002) 1 HANbit Electronics Co., Ltd. HANBit HMF2M64F8VS PIN ASSIGNMENT P1 PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 Symbol VCC DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 VCC DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 VCC A1 A2 A3 A4 A5 VCC A6 A7 A8 A9 VCC PIN 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 Symbol VSS DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 VSS DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 VSS A10 A11 A12 A13 A14 VSS A15 A17 A18 A19 VSS PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 Symbol VCC DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 VCC DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 VCC A20 A0 A16 WE1* WE2* VCC OE* RESET* WE0* RY_BY* VCC P2 PIN 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 Symbol VSS DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 VSS DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63 VSS NC BANK0* VSS VSS WE3* VSS WE4* WE5* WE6* WE7* VSS Note: To stack PCB, the pin number 51 will be used for the upper second PCB. URL :www.hbe.co.kr REV.02(August,2002) 2 HANbit Electronics Co., Ltd. HANBit FUNCTIONAL BLOCK DIAGRAM DQ0 – DQ63 A0 – A20 64 21 A0 A1-20 /WE0 DQ15/A-1 A0-19 /WE /OE /CE RY-BY /Reset DQ 0-7 A0 A1-20 HMF2M64F8VS DQ15/A-1 A0-19 DQ 32-39 /WE /OE /CE RY-BY /Reset /WE4 U1 U5 DQ15/A-1 A0-19 DQ 8-15 /WE1 /WE /OE /CE RY-BY /Reset DQ15/A-1 A0-19 DQ40-47 /WE /OE /CE RY-BY /Reset /WE5 U2 U6 /WE2 DQ15/A-1 A0-19 DQ16-23 /WE /OE /CE RY-BY /Reset DQ15/A-1 A0-19 DQ48-55 /WE /OE /CE RY-BY /Reset /WE6 U3 U7 /WE3 /OE /BANK0 RY_/BY /Reset DQ15/A-1 A0-19 DQ24-31 /WE /OE /CE RY-BY /Reset DQ15/A-1 A0-19 DQ56-63 /WE /OE /CE RY-BY /Reset /WE7 U4 U8 URL :www.hbe.co.kr REV.02(August,2002) 3 HANbit Electronics Co., Ltd. HANBit TRUTH TABLE MODE STANDBY NOT SELECTED READ W RITE or ERASE NOTE: X means don’t care /OE X H L X /CE H L L L /WE X H H L /RESET Vcc±0.3V H H H HMF2M64F8VS DQ ( /BYTE=L ) HIGH-Z HIGH-Z DOUT DIN POWER STANDBY ACTIVE ACTIVE ACTIVE ABSOLUTE MAXIMUM RATINGS PARAMETER Voltage with respect to ground all other pins Voltage with respect to ground Vcc Storage Temperature SYMBOL VIN,OUT VCC TSTG RATING -0.5V to Vcc+0.5V -0.5V to +4.0V -65oC to +150oC Operating Temperature TA -40oC to +85oC w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and fu nctional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS PARAMETER Vcc for ± 10% device Supply Voltages Ground SYMBOL Vcc VSS MIN 2.7V 0 TYP. 3.0 0 MAX 3.6V 0 DC AND OPERATING CHARACTERISTICS ( 0oC ≤ TA ≤ 70 oC ) PARAMETER Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage Vcc Active Read Current (1) /OE = VIH, Vcc Active Write Current (2) Vcc Standby Current Low Vcc Lock-Out Voltage Notes : /CE = VIL, /OE=VIH /CE, /RESET=Vcc ±0.3V 1MHZ ICC2 ICC3 VLKO TEST CONDITIONS Vcc=Vcc max, V IN= GND to Vcc Vcc=Vcc max, V OUT= GND to Vcc IOH = -2.0mA, Vcc = Vcc min IOL = 4.0mA, Vcc =Vcc min /CE = VIL, 5MHZ ICC1 1.5 32 240 240 mA mA V SYMBOL IL1 IL0 VOH VOL MIN -1.0 -10 0.85x Vcc MAX 1.0 1.0 0.4 128 mA UNIT µA µA V V 1. The Icc current listed includes both the DC operating current and the frequent component (at 5MHz). 2. Icc active while embedded algorithm (program or erase) is in progress 3. Not 100% tested URL :www.hbe.co.kr REV.02(August,2002) 4 HANbit Electronics Co., Ltd. HANBit ERASE AND PROGRAMMING PERFORMANCE LIMITS PARAMETER MIN. Block Erase Time Chip Erase Time W ord Programming Time Chip Programming Time TYP. 0.7 27 11 12 330 36 MAX. 15 sec sec µs sec UNIT HMF2M64F8VS COMMENTS Excludes 00H programming prior to erasure Excludes system-level overhead TSOP CAPACITANCE PARAMETER SYMBOL CIN COUT CIN2 PARAMETER DESCRIPTION Input Capacitance Output Capacitance Control Pin Capacitance TEST SETUP VIN = 0 VOUT = 0 VIN = 0 MIN MAX 10 10 10 UNIT pF pF pF Notes : Capacitance is periodically sampled and not 100% tested. TEST SPECIFICATIONS TEST CONDITION Output load Input rise and full times Input pulse levels Input timing measurement reference levels Output timing measurement reference levels VALUE 1TTL gate 5 0 to 3 1.5 1.5 ns V V V UNIT 5.0V IN3064 or Equivalent 2.7kΩ Device Under Test CL 6.2kΩ Diodes = IN3064 or Equivalent Note : CL = 100pF including jig capacitance URL :www.hbe.co.kr REV.02(August,2002) 5 HANbit Electronics Co., Ltd. HANBit AC CHARACTERISTICS u Read Only Operations Characteristics SPEED PARAMETER DESCRIPTION MIN tRC tACC tCE tOE tDF tOEH tQH Read Cycle Time Address Access time Chip Enable to Access time Output Enable time Chip Enable to Output High-Z Output Enable Hold Time Output Hold Time From Addresses, /CE or /OE 0 0 90 90 90 35 30 0 0 - 90 MAX MIN 100 -100 HMF2M64F8VS -120 MAX MIN 120 100 100 40 30 0 0 120 120 50 30 MAX UNIT ns ns ns ns ns ns ns u Erase/Program Operations Alternate /WE Controlled Writes - 90 PARAMETER tWC tAS tAH tDS tDH tOES tGHWL tCS tCH tWP tWPH tPGM tBERS tVCS tRB tRH tRPD tRP tRSTS DESCRIPTION W rite Cycle Time (1) Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write /CE Setup Time /CE Hold Time W rite Pulse Width W rite Pulse Width High Programming Operation Block Erase Operation (2) Vcc set up time W rite Recover Time Before RY_/BY /RESRT High Before Read /RESRT to Power Down Time /RESRT Pulse Width /RESRT Setup Time 0.7 50 0 50 20 500 500 MIN 90 0 45 45 0 0 0 0 0 45 30 11 0.7 50 0 50 20 500 500 MAX MIN 100 0 45 45 0 0 0 0 0 45 30 11 0.7 50 0 50 20 500 500 -100 MAX MIN 120 0 50 50 0 0 0 0 0 50 30 11 -120 MAX ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Notes : : 1. Not 100% tested 2 . The duration of the program or erase operation varies and is calculated in the internal algorithms. URL :www.hbe.co.kr REV.02(August,2002) 6 HANbit Electronics Co., Ltd. HANBit u Erase/Program Operations Alternate /CE Controlled Writes - 90 PARAMETER tWC tAS tAH tDS tDH tOES tGHWL tCS tCH tWP tWPH tPGM tBERS DESCRIPTION MIN W rite Cycle Time(1) Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write /CE Setup Time /CE Hold Time W rite Pulse Width W rite Pulse Width High Programming Operation Block Erase Operation (2) 0.7 90 0 45 45 0 0 0 0 0 45 30 11 0.7 MAX MIN 100 0 45 45 0 0 0 0 0 45 30 11 -100 HMF2M64F8VS -120 MAX MIN 120 0 50 50 0 0 0 0 0 50 30 11 0.7 MAX ns ns ns ns ns ns ns ns ns ns ns ns ns Notes : 1. Not 100% tested 2 . This does not include the preprogramming time u READ OPERATIONS TIMING URL :www.hbe.co.kr REV.02(August,2002) 7 HANbit Electronics Co., Ltd. HANBit u RESET TIMING HMF2M64F8VS u PROGRAM OPERATIONS TIMING Alternate /WE Controlled Writes URL :www.hbe.co.kr REV.02(August,2002) 8 HANbit Electronics Co., Ltd. HANBit Alternate /CE Controlled Writes HMF2M64F8VS u CHIP/BLOCK ERASE OPERATION TIMINGS URL :www.hbe.co.kr REV.02(August,2002) 9 HANbit Electronics Co., Ltd. HANBit HMF2M64F8VS u DATA# POLLING TIMES DURING INTERNAL ROUTINE OPERATION u RY_ /BY TIMEING DURING ERASE / PROGRAM OPERATION URL :www.hbe.co.kr REV.02(August,2002) 10 HANbit Electronics Co., Ltd. HANBit u TOGGLE# BIT DURING INTERNAL ROUTINE OPERATION HMF2M64F8VS URL :www.hbe.co.kr REV.02(August,2002) 11 HANbit Electronics Co., Ltd. HANBit PACKAGE DIMMENSIONS Unit : mm HMF2M64F8VS FRONT SIDE REAR SIDE PCB Thickness: 1.3 ± 0.1mm URL :www.hbe.co.kr REV.02(August,2002) 12 HANbit Electronics Co., Ltd. HANBit ORDERING INFORMATION Part Number HMF2M64F8VS-90 HMF2M64F8VS-100 HMF2M64F8VS-120 Density Org. Package HMF2M64F8VS Component Number 8EA 8EA 8EA Vcc SPEED 16MByte 16MByte 16MByte X 64 X 64 X 64 120 Pin-SMM 120 Pin-SMM 120 Pin-SMM 3.3V 3.3V 3.3V 90ns 100ns 120ns URL :www.hbe.co.kr REV.02(August,2002) 13 HANbit Electronics Co., Ltd.