HMF4M32B8VG-80

HANBit HMF4M32B8VG FLASH-ROM MODULE 16MByte (4M x 32-Bit) ,72pin-SODIMM, 3.3V Part No. HMF4M32B8VG GENERAL DESCRIPTION The HMF4M32B8VG is a high-speed flash read only memory (FROM) module containing 4,194,304 words organized in a x32bit configuration. The module consists of eight 2M x 8 FROM mounted on a 72-pin, single-sided, FR4-printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state -machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from other flash or EPROM devices. Output enable (/OE) and write enable (/WE) can set the memory input and output. When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power design. All module components may be powered from a single +3.0V DC power supply. FEATURES w Access time : 90, 100 and 120ns w High-density 16MByte design w High-reliability, low-power design w Single + 3V ± 0.3V power supply w Easy memory expansion w Hardware reset pin(RESET#) w FR4-PCB design w Low profile 72-pin SODIMM w Minimum 100,000 write/erase cycle w Flexible sector architecture w Embedded algorithms w Erase suspend / Erase resume PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 SYMBOL Vss DQ0 DQ16 DQ1 DQ17 DQ2 DQ18 DQ3 DQ19 Vcc A10 A0 A1 A2 A3 A4 A5 A6 A11 DQ4 DQ20 DQ5 DQ21 DQ6 PIN ASSIGNMENT PIN 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 SYMBOL DQ22 DQ7 DQ23 A7 A12 Vcc A8 A9 /WE3 /WE2 A13 A14 A15 A16 Vss /CE0 /CE2 /CE3 /CE1 /WE0 /WE1 A17 /OE A18 PIN 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 SYMBOL DQ8 DQ24 DQ9 DQ25 DQ10 DQ26 DQ11 DQ27 DQ12 DQ28 Vcc DQ29 DQ13 DQ30 DQ14 DQ31 DQ15 A19 VSS(PD1) VSS(PD2) VSS(PD3) /RESET A20 Vss OPTIONS w Timing 80ns access 90ns access 120ns access MARKING -80 -90 17 18 19 20 21 -120 22 23 24 w Packages 72-pin SODIMM B 72-PIN SODIMM TOP VIEW URL: www.hbe.co.kr REV.02(August,2002) 1 HANbit Electronics Co., Ltd. HANBit FUNCTIONAL BLOCK DIAGRAM HMF4M32B8VG DQ 0-DQ31 DQ 0-31 A0-A20 A0-19 DQ32 A21 A0-20 /CE /OE /WE0 A0-20 /CE /OE /WE1 A0-20 /CE /OE /WE2 DQ16-23 DQ8-15 DQ0-7 A0-20 /CE /OE /WE0 DQ0-7 U1 /WE U5 /WE A0-20 /CE /OE /WE1 A0-20 /CE /OE /WE2 DQ16-23 DQ8-15 U3 /WE U7 /WE U2 /WE U6 /WE A0-20 /CE0 /OE /CE /OE DQ24-31 /CE1 /OE A0-20 /CE /OE DQ24-31 U4 /WE U8 /WE /WE3 /WE3 URL: www.hbe.co.kr REV.02(August,2002) 2 HANbit Electronics Co., Ltd. HANBit TRUTH TABLE MODE STANDBY NOT SELECTED READ W RITE or ERASE NOTE: X means don’t care /OE X H L H /CE H L L L /WE X H H L DQ HIGH-Z HIGH-Z Dout Din HMF4M32B8VG POWER STANDBY ACTIVE ACTIVE ACTIVE ABSOLUTE MAXIMUM RATINGS PARAMETER Voltage on Any Pin Relative to Vss Voltage on Vcc Supply Relative to Vss Power Dissipation Storage Temperature SYMBOL VIN,OUT VCC PD TSTG RATING -0.5V to +4.0V -0.5V to +4.0V 8W -65oC to +150oC Operating Temperature TA -40oC to +85oC w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of th e device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS PARAMETER Supply Voltage Ground Input High Voltage Input Low Voltage SYMBOL VCC VSS VIH VIL MIN 2.7V 0 0.7xVCC -0.5 TYP. 0 MAX 3.6V 0 Vcc+0.3V 0.8V DC CHARACTERISTICS (CMOS Compatible) PARAMETE DESCRIPTION R ILI ILIT Leakage Current ILO Output Leakage Current VOUT= Vss to Vcc, Vcc= Vcc max -1.0 +1.0 uA Input Leakage Current A9 , /RESET Input Vcc= Vcc max ; A9,/RESET=12.5V 35 uA VIN=Vss to Vcc, Vcc=Vcc max -1.0 +1.0 uA TEST CONDITIONS MIN TYP MAX UNIT URL: www.hbe.co.kr REV.02(August,2002) 3 HANbit Electronics Co., Ltd. HANBit Vcc Active Read Current ICC1 (Note1) Vcc Active Write Current ICC2 (Note 2 and 4) ICC3 ICC4 During Reset Automatic Sleep ICC5 Mode(Note3) VIL VIH VID and Temporary Unprotect VOL VOH1 Output High Voltage VOH2 Low Vcc Lock-Out VLKO Voltage Notes : 1. 2. 3. 2.3 IOH=-100uA, Vcc= Vcc min Output Low Voltage IOL=4.0mA, Vcc=Vcc min IOH=-2.0mA, Vcc=Vcc min Input Low Voltage Input High Voltage Voltage for Autoselect Vcc=3.3V 11.5 Vcc Standby Current Vcc Standby Current Vcc=Vcc max ; /CE,Reset=Vcc ±0.3V Vcc=Vcc max ; /Reset=Vcc±0.3V VIH=Vcc±0.3V; VIL=Vss±0.3V -0.5 /CE=VIL, /OE=VIH All Outputs open 1MHZ /CE=VIL, /OE=VIL 5MHZ HMF4M32B8VG 9 2 20 0.2 0.2 16 mA 4 30 5 5 mA uA uA 0.2 5 0.8 Vcc+0.3 12.5 0.45 uA V V V V V V 0.7xVcc 0.85xVcc Vcc-0.4 2.5 V The Icc current listed includes both the DC operating current ane the frequency dependent component(at 5 MHz). The read current is typically 9mA (@VCC=3.0V. /OE at V1H ) Icc active while Embedded Erase or Embedded Program is progress. Automatic sleep mode enables the low power mode when adder sses remain stable for t ACC+30ns. Typical sleep mode current is 200nA. 4. Not 100% tested. ERASE AND PROGRAMMING PERFORMANCE PARAMETER Block Erase Time Chip Erase Time Byte Programming Time W ord Programming Time Chip Programming Time Byte Mode W ord Mode TYP 0.7 25 9 11 18 12 MAX 15 300 360 54 36 UNIT sec sec us us sec sec COMMENTS Excludes 00h programming prior to erasure Excludes system level overhead Notes : O 1. 25 C, Vcc=3.0V, 100,000 cycles, typical pattern. 2. System-level overhead is defined as the time required to excute the four-bus-cycle command necessary to program URL: www.hbe.co.kr REV.02(August,2002) 4 HANbit Electronics Co., Ltd. HANBit HMF4M32B8VG each byte. In the preprogramming step of the internal Erase Routine, all bytes are programmed to 00H before erasure. CAPACITANCE PARAMETER SYMBOL CIN COUT CIN2 PARAMETER TEST SETUP DESCRIPTION Input Capacitance Output Capacitance Control Pin Capacitance VIN = 0V VOUT = 0V VIN = 0V 6 8.5 7.5 7.5 12 9 pF pF pF MIN MAX UNIT Notes : 1. Sampled, not 100% tested 2. Test conditions TA = 25 C, f=1.0 MHz, VCC=3.3V. o TEST SPECIFICATIONS TEST CONDITION Output load Input rise and full times Input pulse levels Input timing measurement reference levels Output timing measurement reference levels VALUE 1TTL gate and CL=100pF 5 0.0 - 3.0 1.5 1.5 ns V V V UNIT 3.0V 2.7kΩ Device Under Test CL IN3064 or Equivalent 6.2kΩ Diodes = IN3064 or Equivalent Note : CL = 100pF including jig capacitance URL: www.hbe.co.kr REV.02(August,2002) 5 HANbit Electronics Co., Ltd. HANBit AC CHARACTERISTICS u Erase / Program Operations PARAMETER SYMBOLS DESCRIPTION JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX STANDARD Min tWC tAS tAH tDS tDH tOES tGHWL tELWL tWHEH tWLWH tWHWL tWHWH1 tWHWH2 tGHWL tCS tCH tWP tWPH tWHWH1 tBERS tVCS tRB tBUSY Note: 1. Not 100% tested. 2. See the "Erase and Programming Performance" section for more Information W rite Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write /CE Setup Time /CE Hold Time W rite Pulse Width W rite Pulse Width High Byte Programming Operation Block Erase Operation Vcc Setup Time Recovery time from RY/BY Program/Erase Valid to RY/BY Delay 80 0 45 35 0 0 0 0 0 35 30 9 0.7 50 0 90 Max Min 90 0 45 45 0 0 0 0 0 35 30 9 0.7 50 0 90 -80 HMF4M32B8VG CL=100Pf -90 Max -120 Min 120 0 50 50 0 0 0 0 0 50 30 9 0.7 50 0 90 Max ns ns ns ns ns ns ns ns ns ns ns µs sec µs ns ns UNIT u Alternate /CE Controlled Erase/ Program Operations CL=100pF PARAMETER SYMBOLS DESCRIPTION JEDEC tAVAV tAVEL tELAX tDVEH tEHDX STANDARD tWC tAS tAH tDS tDH tOES tGHEL tWLEL tEHWH tGHEL tWS tWH W rite Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write /OE High to /WE Low /WE Hold Time Min 80 0 45 35 0 0 0 0 0 -80 Max Min 90 0 45 45 0 0 0 0 0 -90 Max -120 Min 120 0 50 50 0 0 0 0 0 Max ns ns ns ns ns ns ns ns ns UNIT URL: www.hbe.co.kr REV.02(August,2002) 6 HANbit Electronics Co., Ltd. HANBit tELEH tEHEL tCP tCPH tBUSY tRB Note: 1. Not 100% tested. 2. See the "Erase and Programming Performance" section for more Information . /CE Pulse Width /CE Pulse Width High Program/Erase Valid RY//BY Delay Recovery Time from RY//BY 35 30 90 0 35 30 90 0 HMF4M32B8VG 50 30 90 0 ns ns ns ns URL: www.hbe.co.kr REV.02(August,2002) 7 HANbit Electronics Co., Ltd. HANBit u READ OPERATIONS TIMING HMF4M32B8VG u RESET TIMING u PROGRAM OPERATIONS TIMING URL: www.hbe.co.kr REV.02(August,2002) 8 HANbit Electronics Co., Ltd. HANBit HMF4M32B8VG u CHIP/SECTOR ERASE OPERATION TIMINGS u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS) 9 URL: www.hbe.co.kr REV.02(August,2002) HANbit Electronics Co., Ltd. HANBit HMF4M32B8VG u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS) u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM 10 URL: www.hbe.co.kr REV.02(August,2002) HANbit Electronics Co., Ltd. HANBit HMF4M32B8VG u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS URL: www.hbe.co.kr REV.02(August,2002) 11 HANbit Electronics Co., Ltd. HANBit PACKAGE DIMENSIONS HMF4M32B8VG 3.2 mm MAX 2.55 mm MIN 0.25 mm MAX 0.8 mm 0.60±0.05 mm 1.0 ± 0.1mm (Solder & Gold Plating) ORDERING INFORMATION Component Number 8EA 8EA 8EA Part Number Density Org. Package 72 PinSODIMM 72 PinSODIMM 72 PinSODIMM Vcc SPEED HMF4M32B8VG-80 HMF4M32B8VG-90 HMF4M32B8VG-120 16MByte 16MByte 16MByte x 32 x 32 x 32 3.3V 3.3V 3.3V 80ns 90ns 120ns URL: www.hbe.co.kr REV.02(August,2002) 12 HANbit Electronics Co., Ltd.