HMF4M32M4GL-90

HANBit HMF4M32M4GL FLASH-ROM MODULE 16MByte (4M x 32-Bit), 72-Pin SIMM, 5V Part No. HMF4M32M4GL GENERAL DESCRIPTION The HMF4M32M4GL is a high-speed flash read only memory (FROM) module containing 4,194,304 words organized in a x32bit configuration. The module consists of four 4M x 8bit FROM mounted on a 72 -pin, single-sided, FR4-printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Four chip enable inputs, (/WE, /WE1, /WE2, /WE3) are used to enable the module’s 8bits independently. Output enable (/OE) and write enable (/WE) can set the memory input and output. When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power design. All module components may be powered from a single +5V DC power supply and all inputs and outputs are TTLcompatible. FEATURES w Access time : 75, 90 and 120ns w High-density 16MByte design w High-reliability, low-power design w Single + 5V ± 0.5V power supply w Easy memory expansion w All inputs and outputs are TTL-compatible w FR4-PCB design w Low profile 72-pin SIMM w Minimum 1,000,000-write/erase cycle w Sectors erase architecture w Sector group protection w Temporary sector group unprotect ion w The used device is Am29F032B PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 -75 -90 -120 19 20 90ns access 120ns access w Packages 72-pin SIMM M 21 22 23 24 Vss NC DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 Vcc DQ7 /WE0 PIN ASSIGNMENT SYMBOL PIN 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 SYMBOL DQ17 DQ18 DQ19 DQ20 DQ21 Vcc DQ22 DQ23 /WE2 NC DQ24 DQ25 DQ26 DQ27 Vss DQ28 DQ29 DQ30 DQ31 /WE3 NC /RESET A19 /OE PIN 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 SYMBOL /BANK-E0 A18 A17 A16 A15 A14 A13 A12 A11 A10 Vcc A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 A20 A21 Vss /RY_BY DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 /WE1 NC DQ16 OPTION w Timing 75ns access MARKING 72-PIN SIMM TOP VIEW URL: www.hbe.co.kr REV.02(August,2002) 1 HANBit Electronics Co., Ltd. HANBit FUNCTIONAL BLOCK DIAGRAM HMF4M32M4GL DQ0 - DQ31 A0 – A21 /WE0 22 32 A0-21 /WE /OE /CE RY-BY /Reset DQ 0-7 U1 A0-21 /WE1 /WE /OE /CE RY-BY /Reset DQ 8-15 U2 A0-21 /WE2 /WE /OE /CE RY-BY /Reset DQ16-23 U3 A0-21 /WE3 /OE /BANK-E0 /RY_BY /Reset /WE /OE /CE RY-BY /Reset DQ24-31 U4 URL: www.hbe.co.kr REV.02(August,2002) 2 HANBit Electronics Co., Ltd. HANBit TRUTH TABLE MODE STANDBY NOT SELECTED READ W RITE or ERASE NOTE: X means don’t care /OE X H L X /CE H L L L /WE X H H L DQ HIGH-Z HIGH-Z Q D HMF4M32M4GL POWER STANDBY ACTIVE ACTIVE ACTIVE ABSOLUTE MAXIMUM RATINGS PARAMETER Voltage with respect to ground all other pins Voltage with respect to ground Vcc Storage Temperature SYMBOL VIN,OUT VCC TSTG RATING -2.0V to +7.0V -2.0V to +7.0V -65oC to +150oC Operating Temperature TA -55oC to +125 oC w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any othe r conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS PARAMETER Vcc for ± 5% device supply voltage Vcc for ± 10% device supply voltages Ground SYMBOL Vcc Vcc VSS MIN 4.75V 4.5V 0 0 TYP. MAX 5.25V 5.5V 0 DC AND OPERATING CHARACTERISTICS (0oC ≤ TA ≤ 70 oC ; Vcc = 5V ± 0.5V ) PARAMETER Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage Vcc Active Current for Read(1) Vcc Active Current for Program /CE = VIL, /OE=VIH or Erase(2) Vcc Standby Current Low Vcc Lock-Out Voltage Notes: 1. The Icc current listed is typically less than 2mA/MHz, with /OE at V IH. 2. Icc active while embedded algorithm (program or erase) is in progress URL: www.hbe.co.kr REV.02(August,2002) TEST CONDITIONS Vcc=Vcc max, V IN= GND to Vcc Vcc=Vcc max, VOUT= GND to Vcc IOH = -2.5mA, Vcc = Vcc min IOL = 12mA, Vcc =Vcc min /CE = VIL, /OE=VIH, SYMBOL IL1 IL0 VOH VOL ICC1 ICC2 ICC3 VLKO MIN MAX ±1.0 ±1.0 UNITS µA µA V 2.4 0.45 40 60 1.0 3.2 4.2 V mA mA mA V /CE= VIH 3 HANBit Electronics Co., Ltd. HANBit 3. Maximum Icc current specifications are tested with Vcc=Vcc max HMF4M32M4GL ERASE AND PROGRAMMING PERFORMANCE LIMITS PARAMETER MIN. Sector Erase Time Byte Programming Time Chip Programming Time TYP. 1 7 28.8 MAX. Excludes 00H programming 8 300 86.4 sec prior to erasure µs sec Excludes system-level overhead Excludes system-level overhead UNIT COMMENTS TSOP CAPACITANCE PARAMETER SYMBOL CIN COUT CIN2 PARAMETER TEST SETUP DESCRIPTION Input Capacitance Output Capacitance Control Pin Capacitance VIN = 0 VOUT = 0 VIN = 0 6 8.5 7.5 7.5 12 9 pF pF pF MIN MAX UNIT Notes : Test conditions TA = 25o C, f=1.0 MHz. AC CHARACTERISTICS u Read Only Operations Characteristics PARAMETER SYMBOLS JEDEC tAVAV tAVQV STANDARD tRC tACC Address to Output Delay /OE = VIL tELQV tGLQV tEHQZ tGHQZ tAXQX tCE tOE tDF tDF tQH /CE or /OE, Whichever Occurs First Chip Enable to Output Delay Chip Enable to Output Delay Chip Enable to Output High-Z Output Enable to Output High-Z Output Hold Time From Addresses, Min 0 0 ns /OE = VIL Max Max Max Max 70 40 20 20 90 40 20 20 ns ns ns ns Read Cycle Time /CE = V IL Max 70 90 ns Min 70 90 ns DESCRIPTION TEST SETUP -75 -90 UNIT TEST SPECIFICATIONS TEST CONDITION Output load Output load capacitance, 30 CL (Including jig capacitance) 100 pF 75 ALL OTHERS 1TTL gate UNIT URL: www.hbe.co.kr REV.02(August,2002) 4 HANBit Electronics Co., Ltd. HANBit Input rise and full times Input pulse levels Input timing measurement reference levels Output timing measurement reference levels 5 0.0 - 3.0 1.5 1.5 HMF4M32M4GL 20 0.45-2.4 0.8 2.0 ns V V V 5.0V 2.7kΩ Device Under Test CL IN3064 or Equivalent 6.2kΩ Diodes = IN3064 or Equivalent Note : CL = 100pF including jig capacitance u Write (Erase/Program) Operations PARAMETER SYMBOLS JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX tGHWL tELWL tWHEH tWLWH tWHWL tWHWH1 tWHWH2 STANDARD tWC tAS tAH tDS tDH tGHWL tCS tCH tWP tWPH tWHWH1 tWHWH2 tVCS Notes : 1. This does not include the preprogramming time URL: www.hbe.co.kr REV.02(August,2002) DESCRIPTION -75 -90 UNIT W rite Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Read Recover Time Before Write /CE Setup Time /CE Hold Time W rite Pulse Width W rite Pulse Width High Byte Programming Operation Sector Erase Operation (Note1) Vcc set up time Min Min Min Min Min Min Min Min Min Min Typ Typ Min 70 0 40 40 0 0 0 0 40 20 7 1 50 90 0 45 45 0 0 0 0 45 20 7 1 50 ns ns ns ns ns ns ns ns ns ns µs Sec µs 5 HANBit Electronics Co., Ltd. HANBit 2. This timing is only for Sector Protect operations HMF4M32M4GL uWrite(Erase/Program) Operations Alternate /CE Controlled Writes PARAMETER SYMBOLS DESCRIPTION JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX STANDARD tWC tAS tAH tDS tDH tOES tGHWL tELWL tWHEH tWLWH tWHWL tWHWH1 tWHWH2 Notes : 1. This does not include the preprogramming time 2. This timing is only for Sector Protect operations tGHWL tCS tCH tWP tWPH tWHWH1 tWHWH2 W rite Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write /CE Setup Time /CE Hold Time W rite Pulse Width W rite Pulse Width High Byte Programming Operation Sector Erase Operation (Note1) Min Min Min Min Min Min Min Min Min Min Min Typ Typ 70 0 40 40 0 0 0 0 0 40 20 7 1 90 0 45 45 0 0 0 0 0 45 20 7 1 Ns ns ns ns ns ns ns ns ns ns ns µs sec -75 -90 UNIT URL: www.hbe.co.kr REV.02(August,2002) 6 HANBit Electronics Co., Ltd. HANBit u READ OPERATIONS TIMING HMF4M32M4GL u RESET TIMING URL: www.hbe.co.kr REV.02(August,2002) 7 HANBit Electronics Co., Ltd. HANBit u PROGRAM OPERATIONS TIMING HMF4M32M4GL u CHIP/SECTOR ERASE OPERATION TIMINGS URL: www.hbe.co.kr REV.02(August,2002) 8 HANBit Electronics Co., Ltd. HANBit u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS) HMF4M32M4GL u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS) URL: www.hbe.co.kr REV.02(August,2002) 9 HANBit Electronics Co., Ltd. HANBit u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM HMF4M32M4GL u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS URL: www.hbe.co.kr REV.02(August,2002) 10 HANBit Electronics Co., Ltd. HANBit PACKAGE DIMENSIONS HMF4M32M4GL 108mm 3.2 mm 6.35 mm 1 72 2.03 mm 1.02 mm 6.35 mm 95.25 mm 1.27 mm 3.34 mm 2.54 mm 0.25 mm MAX MIN 1.29±0.08 mm Gold: 1.04±0.10 mm 1.27 m m Solder: 0.914±0.10 mm (Solder & Gold Plating) ORDERING INFORMATION Component Number 4EA 4EA 4EA Part Number Density Org. Package Vcc SPEED HMF4M32M4GL-75 HMF4M32M4GL-90 HMF4M32M4GL-120 16MByte 16MByte 16MByte 4MX 32bit 4MX 32bit 4MX 32bit 72 Pin-SIMM 72 Pin-SIMM 72 Pin-SIMM 5V 5V 5V 75ns 90ns 120ns URL: www.hbe.co.kr REV.02(August,2002) 11 HANBit Electronics Co., Ltd.