HMF4M32M8G

HANBit HMF4M32M8G FLASH-ROM MODULE 16MByte (4M x 32Bit), 72-Pin SIMM, 5V Part No. HMF4M32M8G GENERAL DESCRIPTION The HMF4M32M8G is a high-speed flash read only memory (FROM) module containing 8,388,608 words organized in a x32bit configuration. The module consists of eight 2M x 8bit FROM mounted on a 72 -pin, double-sided, FR4-printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Eight chip enable inputs, (/CE_UU1, /CE_UM1, /CE_LM1, /CE_LL1, /CE_UU2, /CE_UM2, /CE_LM2, CE_LL2) are use d to enable the module ’s 4 bytes independently. Outputs enable (/OE) and write enable (/WE) can set the memory input and output.When FROM module is disable condition the module is becoming power standby mode, system designer can get low power design. All module components may be powered from a single +5V DC power supply and all inputs and outputs are TTL-compatible. FEATURES w Part Identifications HMF4M32M8G : 16Mbyte, 72-pin SIMM, Gold HMF4M32M8 : 16Mbyte, 72-pin SIMM, Solder wAccess time : 75, 90 and 120ns w High-density 16MByte design w High-reliability, low-power design w Single + 5V ± 0.5V power supply w Easy memory expansion w All inputs and outputs are TTL-compatible w FR4-PCB design w Low profile 72-pin SIMM w Minimum 1,000,000 write/erase cycle w Sectors erase architecture w Sector group protection w Temporary sector group unprotection w The used device is Am29F016B or MBM29F016-90PFTN PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 -75 -90 -120 22 23 24 120ns access w Packages PIN ASSIGNMENT SYMBOL Vss A3 A2 A1 A0 Vcc A11 /OE A10 /RESET /CE-LL2 /CE-LL1 DQ7 DQ0 DQ1 DQ2 DQ6 DQ5 DQ4 DQ3 /WE A17 A14 A13 PIN 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 SYMBOL A20 DQ8 DQ9 DQ10 /CE-LM2 Vcc /CE-LM1 DQ15 DQ14 DQ13 DQ12 DQ11 A18 A16 Vss A6 /RY_BY A5 A4 Vcc /CE-UM2 /CE-UM1 DQ23 DQ16 PIN 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 SYMBOL DQ17 DQ18 DQ22 DQ21 DQ20 DQ19 A19 A15 A12 A7 Vcc A8 A9 DQ24 DQ25 DQ26 /CE-UU2 /CE-UU1 DQ31 DQ30 DQ29 DQ28 DQ27 Vss OPTIONS w Timing 75ns access 90ns access MARKING 72-PIN SIMM 72-pin SIMM M TOP VIEW URL: www.hbe.co.kr REV.02(August,2002) 1 HANBit Electronics Co., Ltd. HANBit Functional Block Diagram DQ 0-DQ31 A0-A20 DQ32 A21 HMF4M32M8G A0-20 DQ0-7 /WE /OE /CE /CE-LL1 A0-20 DQ8-15 /WE /OE /CE-LM1 A0-20 /WE /OE /CE-UM1 /CE DQ16-23 /CE /CE-LM2 /CE-LL2 A0-20 /WE /OE /CE DQ0-7 U1 U5 A0-20 /WE /OE /CE DQ8-15 U2 U6 A0-20 /WE /OE /CE-UM2 DQ 16-23 U3 U7 /CE A0-20 /WE /OE /WE /OE /CE /CE-UU1 /CE-UU2 DQ24-31 /WE /OE A0-20 /WE /OE /CE DQ 24-31 U4 U8 URL: www.hbe.co.kr REV.02(August,2002) 2 HANBit Electronics Co., Ltd. HANBit TRUTH TABLE MODE STANDBY NOT SELECTED READ W RITE or ERASE NOTE: X means don’t care /OE X H L X /CE H L L L /WE X H H L DQ HIGH-Z HIGH-Z Q D HMF4M32M8G POWER STANDBY ACTIVE ACTIVE ACTIVE ABSOLUTE MAXIMUM RATINGS PARAMETER Voltage with respect to ground all other pins Voltage with respect to ground Vcc Storage Temperature SYMBOL VIN,OUT VCC TSTG RATING -2.0V to +7.0V -2.0V to +7.0V -65oC to +125oC Operating Temperature TA -55oC to +125 oC w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the devic e. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extende d periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS PARAMETER Vcc for ± 10% device Supply Voltages Ground SYMBOL Vcc VSS MIN 4.5V 0 0 TYP. MAX 5.5V 0 DC AND OPERATING CHARACTERISTICS (0oC ≤ TA ≤ 70 oC ; Vcc = 5V ± 0.5V ) PARAMETER Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage Vcc Active Current for Read(1) Vcc Active Current for Program /CE = VIL, /OE=VIH or Erase(2) Vcc Standby Current Low Vcc Lock-Out Voltage Notes : 1. The Icc current listed is typically less than 2mA/MHz, with /OE at V IH. 2. Icc active while embedded algorithm (program or erase) is in progress 3. Maximum Icc current specifications are tested with Vcc=Vcc ma x URL: www.hbe.co.kr REV.02(August,2002) TEST CONDITIONS Vcc=Vcc max, V IN= GND to Vcc Vcc=Vcc max, VOUT= GND to Vcc IOH = -2.5mA, Vcc = Vcc min IOL = 12mA, Vcc =Vcc min /CE = VIL, /OE=VIH, SYMBOL IL1 IL0 VOH VOL ICC1 ICC2 ICC3 VLKO MIN MAX ±1.0 ±1.0 UNITS µA µA V 2.4 0.45 40 60 1.0 3.2 4.2 V mA mA mA V /CE= VIH 3 HANBit Electronics Co., Ltd. HANBit ERASE AND PROGRAMMING PERFORMANCE LIMITS PARAMETER MIN. Sector Erase Time TYP. 1 MAX. UNIT HMF4M32M8G COMMENTS Excludes 00H programming 8 sec prior to erasure Excludes system-level overhead Excludes system-level Byte Programming Time - 7 300 µs Chip Programming Time - 14.4 43.2 sec overhead TSOP CAPACITANCE PARAMETER SYMBOL CIN COUT CIN2 PARAMETER TEST SETUP DESCRIPTION Input Capacitance Output Capacitance Control Pin Capacitance o MIN 6 8.5 7.5 MAX 7.5 12 9 UNIT pF pF pF VIN = 0 VOUT = 0 VIN = 0 Notes : Test conditions TA = 25 C, f=1.0 MHz. AC CHARACTERISTICS u Read Only Operations Characteristics PARAMETER SYMBOLS JEDEC tAVAV tAVQV STANDARD tRC tACC Address to Output Delay /OE = VIL tELQV tGLQV tEHQZ tGHQZ tAXQX tCE tOE tDF tDF tQH /CE or /OE, Whichever Occurs First Chip Enable to Output Delay Chip Enable to Output Delay Chip Enable to Output High-Z Output Enable to Output High-Z Output Hold Time From Addresses, Min 0 0 ns /OE = VIL Max Max Max Max 70 40 20 20 90 40 20 20 ns ns ns ns Read Cycle Time /CE = V IL Max 70 90 ns Min 70 90 ns DESCRIPTION TEST SETUP -75 -90 UNIT TEST SPECIFICATIONS TEST CONDITION Output load ALL SPEED OPTIONS 1TTL gate UNIT URL: www.hbe.co.kr REV.02(August,2002) 4 HANBit Electronics Co., Ltd. HANBit Output load capacitance, 100 CL (Including jig capacitance) Input rise and full times Input pulse levels Input timing measurement reference levels Output timing measurement reference levels 20 0.45-2.4 0.8 2.0 HMF4M32M8G pF ns V V V 5.0V 2.7kΩ Device Under Test CL IN3064 or Equivalent 6.2kΩ Diodes = IN3064 or Equivalent Note : CL = 100pF including jig capacitance u Erase/Program Operations PARAMETER SYMBOLS JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX STANDARD tWC tAS tAH tDS tDH tOES tGHWL tELWL tWHEH tWLWH tWHWL tWHWH1 tWHWH2 tGHWL tCS tCH tWP tWPH tWHWH1 tWHWH2 W rite Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write /CE Setup Time /CE Hold Time W rite Pulse Width W rite Pulse Width High Byte Programming Operation Sector Erase Operation (Note1) Min Min Min Min Min Min Min Min Min Min Min Typ Typ 70 0 40 40 0 0 0 0 0 40 20 7 1 90 0 45 45 0 0 0 0 0 45 20 7 1 ns ns ns ns ns ns ns ns ns ns ns µs sec DESCRIPTION -75 -90 UNIT URL: www.hbe.co.kr REV.02(August,2002) 5 HANBit Electronics Co., Ltd. HANBit tVCS Notes : 1. This does not include the preprogramming time 2. This timing is only for Sector Protect operations Vcc set up time Min HMF4M32M8G 50 50 µs u Erase/Program Operations Alternate /CE Controlled Writes PARAMETER SYMBOLS DESCRIPTION JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX STANDARD tWC tAS tAH tDS tDH tOES tGHWL tELWL tWHEH tWLWH tWHWL tWHWH1 tWHWH2 Notes : 1. This does not include the preprogramming time 2. This timing is only for Sector Protect operations tGHWL tCS tCH tWP tWPH tWHWH1 tWHWH2 W rite Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write /CE Setup Time /CE Hold Time W rite Pulse Width W rite Pulse Width High Byte Programming Operation Sector Erase Operation (Note1) Min Min Min Min Min Min Min Min Min Min Min Typ Typ 70 0 40 40 0 0 0 0 0 40 20 7 1 90 0 45 45 0 0 0 0 0 45 20 7 1 ns ns ns ns ns ns ns ns ns ns ns µs sec -75 -90 UNIT URL: www.hbe.co.kr REV.02(August,2002) 6 HANBit Electronics Co., Ltd. HANBit u READ OPERATIONS TIMING HMF4M32M8G u RESET TIMING URL: www.hbe.co.kr REV.02(August,2002) 7 HANBit Electronics Co., Ltd. HANBit u PROGRAM OPERATIONS TIMING HMF4M32M8G u CHIP/SECTOR ERASE OPERATION TIMINGS URL: www.hbe.co.kr REV.02(August,2002) 8 HANBit Electronics Co., Ltd. HANBit u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS) HMF4M32M8G u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS) URL: www.hbe.co.kr REV.02(August,2002) 9 HANBit Electronics Co., Ltd. HANBit u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM HMF4M32M8G u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS URL: www.hbe.co.kr REV.02(August,2002) 10 HANBit Electronics Co., Ltd. HANBit PACKAGE DIMENSIONS HMF4M32M8G 108mm 3.2 mm 6.35 mm 1 72 2.03 mm - 1.02 mm 6.35 mm 95.25 mm 1.27 mm 3.34 mm 2.54 mm 0.25 mm MAX MIN Gold: 1.04±0.10 mm 1.27 m m Solder: 0.914±0.10 mm 1.27±0.08 mm (Solder & Gold Plating) ORDERING INFORMATION Component Number 8EA 8EA 8EA Part Number Density Org. Package Vcc SPEED HMF4M32M8G-75 HMF4M32M8G-90 HMF4M32M8G-120 16MByte 16MByte 16MByte 4MX 32bit 4MX 32bit 72 Pin-SIMM 72 Pin-SIMM 72 Pin-SIMM 5V 5V 5V 70ns 90ns 120ns 4MX 32bit URL: www.hbe.co.kr REV.02(August,2002) 11 HANBit Electronics Co., Ltd.