HMF51232M4V-55

HANBit HMF51232M4V FLASH-ROM MODULE 2MByte (512K x 32-Bit) Part No. HMF51232M4V GENERAL DESCRIPTION The HMF51232M4V is a high-speed flash read only memory (FROM) module containing 524,288 words organized in a x32bit configuration. The module consists of four 512Kx 8 FROM mounted on a 72-pin, single-sided, FR4-printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Four chip enable inputs, (/CE_UU1, /CE_UM1, /CE_LM1, /CE_LL1) are used to enable the module’s 4 bytes independently. Output enable (/OE) and write enable (/WE) can set the memory input and output. When FROM module is disable condition, the module is becoming power standby mode, system designer can get low-power design. All module components may be powered from a single +3V DC power supply and all inputs and outputs are TTL-compatible. FEATURES w Access time : 55,70, 90 and 120ns w High-density 2MByte design w High-reliability, low-power design w Single + 3V ± 0.3V power supply w Easy memory expansion wAll inputs and outputs are TTL- compatible w FR4-PCB design w Low profile 72-pin SIMM w Minimum 1,000,000 write/erase cycle w Sector erases architecture w Sector group protection w Temporary sector group unprotection w Part Identification HMF51232M4V : Gold Plate Lead PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 SYMBOL Vss A3 A2 A1 A0 Vcc A11 /OE A10 Vcc NC /CE_LL1 DQ7 DQ0 DQ1 DQ2 DQ6 DQ5 DQ4 DQ3 /WE A17 A14 A13 PIN ASSIGNMENT PIN 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 SYMBOL Vcc DQ8 DQ9 DQ10 NC Vcc /CE_LM1 DQ15 DQ14 DQ13 DQ12 DQ11 A18 A16 Vss A6 Vcc A5 A4 Vcc NC /CE_UM1 DQ23 DQ16 72-PIN SIMM TOP VIEW PIN 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 SYMBOL DQ17 DQ18 DQ22 DQ21 DQ20 DQ19 Vcc A15 A12 A7 Vcc A8 A9 DQ24 DQ25 DQ26 NC /CE_UU1 DQ31 DQ30 DQ29 DQ28 DQ27 Vss OPTIONS w Timing 55ns access 70ns access 90ns access 120ns access w Package MARKING - 55 - 70 - 90 - 120 16 17 18 19 20 21 22 23 24 72-pin SIMM M FUNCTIONAL BLOCK DIAGRAM URL: www.hbe.co.kr REV.02(August,2002) 1 HANBit Electronics Co., Ltd. HANBit HMF51232M4V DQ0 - DQ31 A0 - A18 32 19 A0-18 /WE /OE /CE DQ 0-7 U5 /CE_LL1 A0-18 /WE /OE /CE /CE_LM1 A0-18 /WE /OE /CE /CE_UM1 A0-18 /WE /OE /WE /OE /CE /CE_UU1 DQ24-31 DQ16-23 DQ 8-15 U6 U7 U8 TRUTH TABLE MODE STANDBY NOT SELECTED READ W RITE Note : X means don't care /OE X H L X /CE H L L L /WE X H H L DQ HIGH-Z HIGH-Z Dout Din POWER STANDBY ACTIVE ACTIVE ACTIVE ABSOLUTE MAXIMUM RATINGS URL: www.hbe.co.kr REV.02(August,2002) 2 HANBit Electronics Co., Ltd. HANBit PARAMETER Voltage with respect to ground all other pins Voltage with respect to ground Vcc Power Dissipation Storage Temperature SYMBOL VIN,OUT VCC Po TSTG HMF51232M4V RATING -0.5V to VCC + 7.0V -0.5V to + 4.0V 4W -65oC to +150oC Operating Temperature TA -55oC to +125oC w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS PARAMETER Vcc for ±5% device Supply Voltages Vcc for ± 10% device Supply Voltages Ground SYMBOL VCC Vcc VSS MIN 4.75V 4.5V 0 0 TYP. MAX 5.25V 5.5V 0 DC AND OPERATING CHARACTERISTICS (0oC ≤ TA ≤ 70 oC ; Vcc = 5V ± 0.5V ) PARAMETER Input Load Current A9 Input Load Current Output Leakage Current Vcc Active Read Current TEST CONDITIONS Vcc=Vcc max, VIN= Vss to Vcc Vcc=Vcc max; A9 = 12.5V Vcc=Vcc max, VOUT= Vss to Vcc /CE=VIL, /OE=VIH, 5 MHz 1 MHz Vcc Active Write Current Vcc Standby Current Vcc Reset Current Automatic Sleep Mode VIH = Vcc±0.3V; VIL = Vss±0.3V Input Low Voltage Input High Voltage Voltage for Autoselect and Vcc= 3.3V Temporary Sector Unprotect Output Low Voltage Output High Voltage Low Vcc Lock-Out Voltage Notes : 1. The Icc current listed is typically less than 2mA/MHz, with /OE at VIH. IOL = 4.0 mA, Vcc =Vcc min IOH= -0.2 mA, Vcc=Vcc min IOH= -100µA, Vcc=Vcc min VOL VOH1 VOH2 VLKO 0.85Vcc Vcc-0.4 2.3 2.5 V 0.45 V V VID 11.5 12.5 V ICC5 VIL VIH -0.5 0.7×Vcc 0.2 5 0.8 Vcc+0.3 /CE = VIL, /OE=VIH /CE= VCC±0.3V ICC2 ICC3 ICC4 SYMBOL ILI ILIT IL0 ICC1 28 8 60 0.8 0.8 MIN TYP MAX ±1.0 35 ±1.0 48 mA 16 120 20 20 mA µA µA µA V V UNITS µA µA µA URL: www.hbe.co.kr REV.02(August,2002) 3 HANBit Electronics Co., Ltd. HANBit 2. 3. 4. 5. Maximum Icc currnet specifications are tested with Vcc= Vcc max. Icc active while Embedded Erase of Embedded Program is in progress. Not 100%tested. HMF51232M4V Automatic sleep mode enables the low power mode when addresses remain stable for tACC +30 ns. ERASE AND PROGRAMMING PERFORMANCE PARAMETER Sector Erase Time Chip Erase Time Byte Programming Time Chip Programming Time Notes : 1. Typical program and erase times assume the following conditions:25° C, 3.0V Vcc, 1,000,000 cycles. Additionally, programming typicals assume checkerboard pattern. 2. Under worst case conditions of 90°C, Vcc=2.7V(3.0V for-55R), 1,000,000cycles. 3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster than the maximum program times listed. 4. In the pre-programming step of th Embedded Erase algorithm, all bytes are programmed to 00h before erasure. 5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table 4 for further information on command definitions. 6. The device has a minimum guaranteed erase and program cycle endurance of 1,000,000 cycles. MIN TPYP 0.7 11 9 4.5 300 13.5 MAX 15 UNIT sec sec us sec COMMENTS Excludes 00h programming prior to erasure Excludes system-level overhead CAPACITANCE PARAMETER SYMBOL CIN COUT CIN2 PARAMETER TEST SETUP DESCRIPTION Input Capacitance Output Capacitance Control Pin Capacitance VIN = 0 VOUT = 0 VIN = 0 6 8.5 7.5 7.5 12 9 pF pF pF TYP. MAX UNIT Notes : Test conditions TA = 25o C, f=1.0 MHz. TEST CONDITIONS TEST CONDITION Output load Output load Capacitance, CL Input Rise and Fall Times Input Pulse Levels Input timing measurement reference levels URL: www.hbe.co.kr REV.02(August,2002) -55R, -70 1 TTL gate 30 5 0~3 1.5 -90, -120 UNIT 100 pF ns V V HANBit Electronics Co., Ltd. 4 HANBit Output timing measurement reference levels 1.5 HMF51232M4V V AC CHARACTERISTICS u Read Only Operations Characteristics PARAMETE TEST R SYMBOLS tRC tACC Address to Output Delay /OE = VIL tCE tOE tDF tDF Chip Enable to Output Delay Chip Enable to Output Delay Chip Enable to Output High-Z Output Enable to Output High-Z Output Hold Time From Addresses, tQ /CE or /OE, Whichever Occurs First 0 0 0 0 ns /OE = VIL 55 30 25 25 70 30 25 25 90 35 30 30 120 50 30 30 ns ns ns ns Read Cycle Time /CE = VIL 55 55 70 70 90 120 ns 90 120 ns DESCRIPTION SETUP MIN MAX MIN MAX MIN MAX MIN MAX -55 -70 -90 -120 UNIT 5.0V 2.7kΩ Device Under Test CL IN3064 or Equivalent 6.2kΩ Diodes = IN3064 or Equivalent Note : CL = 100pF including jig capacitance u Erase/Program Operations PARAMETE DESCRIPTION -55 -70 -90 -120 UNIT URL: www.hbe.co.kr REV.02(August,2002) 5 HANBit Electronics Co., Ltd. HANBit MIN tWC tAS tAH tDS tDH tOES tGHWL tCS tCH tWP tWPH tWHWH1 tWHWH2 tVCS Notes : 1. This does not include the preprogramming time 2. This timing is only for Sector Protect operations W rite Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write /CE Setup Time /CE Hold Time W rite Pulse Width W rite Pulse Width High Programming Operation Sector Erase Operation (Note1) Vcc set up time 35 35 30 9 0.7 50 45 35 45 35 0 0 0 0 0 35 55 TYP MIN 70 0 45 45 MAX MIN 90 HMF51232M4V MAX MIN 120 MAX ns ns 50 50 ns ns ns ns ns ns ns 50 ns ns µs sec µs u Erase/Program Operations Alternate /CE Controlled Writes PARAMETE R SYMBOLS tWC tAS tAH tDS tDH tGHEL tWS tWH tCP tCPH tWHWH1 tWHWH2 W rite Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Read Recover Time Before Write /WE Setup Time /WE Hold Time /CE Pulse Width /CE Pulse Width High Programming Operation Sector Erase Operation (Note) 35 35 30 9 0.7 40 35 45 35 0 0 0 0 45 50 55 70 0 45 35 50 50 90 120 ns ns ns ns ns ns ns ns ns ns µs sec DESCRIPTION MIN -55 TYP MIN -70 MAX MIN -90 MAX MIN -120 MAX UNIT Notes : This does not include the preprogramming time. URL: www.hbe.co.kr REV.02(August,2002) 6 HANBit Electronics Co., Ltd. HANBit u READ OPERATIONS TIMING HMF51232M4V u RESET TIMING URL: www.hbe.co.kr REV.02(August,2002) 7 HANBit Electronics Co., Ltd. HANBit u PROGRAM OPERATIONS TIMING HMF51232M4V u CHIP/SECTOR ERASE OPERATION TIMINGS URL: www.hbe.co.kr REV.02(August,2002) 8 HANBit Electronics Co., Ltd. HANBit u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS) HMF51232M4V u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS) URL: www.hbe.co.kr REV.02(August,2002) 9 HANBit Electronics Co., Ltd. HANBit u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM HMF51232M4V u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS URL: www.hbe.co.kr REV.02(August,2002) 10 HANBit Electronics Co., Ltd. HANBit PACKAGE DIMENSIONS HMF51232M4V U5 U6 U7 U8 0.25 mm MAX 2.54 mm MIN Gold: 1.04±0.10 mm Solder: 0.914±0.10 mm 1.27±0.08mm 1.27 (Solder & Gold Plating) ODERING INFORMATION Part Number Density Org. Package Component Number 4EA 4EA 4EA 4EA Vcc SPEED HMF51232M4V-55 HMF51232M4V-70 HMF51232M4V-90 HMF51232M4V-120 2MByte 2MByte 2MByte 2MByte 512K×32bit 512K×32bit 512K×32bit 512K×32bit 72 Pin-SIMM 72 Pin-SIMM 72 Pin-SIMM 72 Pin-SIMM 3.3V 3.3V 3.3V 3.3V 55ns 70ns 90ns 120ns URL: www.hbe.co.kr REV.02(August,2002) 11 HANBit Electronics Co., Ltd.