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HMF8M16F8V-90

HMF8M16F8V-90

  • 厂商:

    HANBIT

  • 封装:

  • 描述:

    HMF8M16F8V-90 - FLASH-ROM MODULE 16MByte (8M x 16-Bit) - Memory Stack Type - Hanbit Electronics Co.,...

  • 数据手册
  • 价格&库存
HMF8M16F8V-90 数据手册
HANBit HMF8M16F8V-90 FLASH-ROM MODULE 16MByte (8M x 16-Bit) – Memory Stack Type Part No. HMF8M16F8V- 90 GENERAL DESCRIPTION The HMF8M16F8V is a high-speed flash read only memory (FROM) module containing 8,388,608 words organized in an x16bit configuration. The module consists of eight 2M x 8 FROM mounted on a 100-pin, MMC connector FR4-printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Output enable (/OE) and write enable (/WE) can set the memory input and output. The host system can detect a program or erase operation is complete by observing the Ready Pin, or reading the DQ7(Data # Polling) and DQ6(Toggle) status bits. When FROM module is disable condition the module is becoming power standby mode, system designer can get low-power design. All module components may be powered from a single +3V DC power supply and all inputs and outputs are LVTTLcompatible. FEATURES w Part identification HMF8M16F8V(Bottom boot block configuration) Vcc A22 A21 A20 DQ15 DQ14 DQ13 Vss DQ12 DQ11 DQ10 DQ8 Vss DQ6 DQ4 DQ3 DQ2 Vss DQ1 DQ0 A0 A1 A2 A3 Vcc 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 PIN ASSIGNMENT 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 Vcc NC A19 A18 A17 A16 A15 Vss A14 A13 DQ9 DQ7 Vss DQ5 A12 A11 A10 Vss A9 A8 A7 A6 A5 A4 Vcc Vcc NC /WE0 /WE1 Ready NC NC Vss /OE /CS NC NC Vss NC NC NC /Reset Vss NC NC NC NC Vss NC Vcc 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 Vcc NC NC NC NC NC NC Vss NC NC NC NC Vss NC NC NC NC Vss NC NC NC NC Vss NC Vcc w Access time: 70, 80, 90, 120ns w High-density 16MByte design w High-reliability, low-power design w Single + 3V to 3.6V power supply w 100-Pin Designed 50-Pin Fine Pitch MMC Connector P1,P2 w Minimum 1,000,000 write cycle guarantee per sector w 20-year data retention at 125 oC w Flexible sector architecture w Embedded algorithms w Erase suspend / Erase resume OPTIONS w Timing 70ns access 80ns access 90ns access 120ns access w Packages FH 100-pin MARKING - 70 - 80 - 90 -120 50-PIN P1 Connector 50-PIN P2 Connector F URL: www.hbe.co.kr REV.02(August,2002) 1 HANBit Electronics Co., Ltd. HANBit FUNCTIONAL BLOCK DIAGRAM A0-20 D0-15 HMF8M16F8V-90 D0-7 D8-15 A /Bank0 D A /CE /OE /WE /Reset /RY-BY D /CE /OE /WE /Reset /RY-BY U1 U2 A /Bank1 /CE /OE /WE /Reset /RY-BY D A /CE /OE /WE /Reset /RY-BY D U3 U4 A /Bank2 D A /CE /OE /WE /Reset /RY-BY D /CE /OE /WE /Reset /RY-BY U5 U6 A /Bank3 /OE /WE0 /Reset /Ry-By /WE1 /CE /OE /WE /Reset /RY-BY D A /CE /OE /WE /Reset /RY-BY D U7 U8 Decoder A21 A22 /CS A B /E /Bank0 /Bank1 /Bank2 /Bank3 URL: www.hbe.co.kr REV.02(August,2002) 2 HANBit Electronics Co., Ltd. HANBit TRUTH TABLE MODE STANDBY RESET SECTOR PROTECT SECTOR UNPROTECT READ W RITE /CS Vcc±0.3V X L L L L /OE X X H H L H /WE X X L L H L RESET Vcc±0.3V L VID VID H H HMF8M16F8V-90 DQ HIGH-Z HIGH-Z DIN, DOUT DIN, DOUT DOUT DOUT Note : X means don't care, WE0* Low byte (D0~7) Write enable, WE1* High byte(D8~15) Write enable. ABSOLUTE MAXIMUM RATINGS PARAMETER Voltage on Any Pin Relative to Vss Voltage on Vcc Supply Relative to Vss Output Short Circuit Current Storage Temperature RATING -0.5V to Vcc +0.5V -0.5V to +4.0V 1,600mA -65oC to +150oC Operating Temperature -0oC to +70oC w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED OPERATING CONDITIONS PARAMETER Vcc for regulated Supply Voltage Vcc for full voltage RANGE +3.0V to 3.6V +2.7V to 3.6V DC AND OPERATING CHARACTERISTICS PARAMETER Input Load Current Output Leakage Current Output High Voltage Output Low Voltage Vcc Active Read Current URL: www.hbe.co.kr REV.02(August,2002) TEST CONDITIONS VIN= VSS to VCC , VCC= VCC max VOUT= VSS to VCC, VCC= VCC max IOH = -2.0mA, Vcc = Vcc min IOL = 4.0mA, Vcc = Vcc min /CE = VIL, ,/OE=VIH, f=5MHz SYMBOL IL1 IL0 VOH VOL ICC1 MIN MAX ±8.0 ±8.0 UNITS µA µA V 0.85Vcc 0.45 128 V mA 3 HANBit Electronics Co., Ltd. HANBit Vcc Active Write Current Vcc Standby Current Vcc Reset Current Low Vcc Lock-Out Voltage /CE = VIL, /OE=VIH /CE, RESET=VCC±0.3V /RESET=Vss±0.3V, ICC2 ICC3 ICC4 VLKO HMF8M16F8V-90 240 40 40 2.3 2.5 mA µA µA V ERASE AND PROGRAMMING PERFORMANCE LIMITS PARAMETER MIN. Sector Erase Time TYP. 0.7 MAX. Excludes 00H programming 15 Sec prior to erasure Byte Programming Time 9 300 µS Excludes system-level overhead Excludes system-level Chip Programming Time 18 54 sec overhead UNIT COMMENTS TSOP PIN CAPACITANCE PARAMETER SYMBOL CIN Capacitance COUT CIN2 Output Capacitance Control Pin Capacitance /CE /WE /OE Data VOUT = 0 VIN = 0 PARAMETER TEST SETUP DESCRIPTION Input Address VIN = 0 24 8.5 7.5 30 60 30 12 9 36 72 pF pF 48 60 pF TYP. MAX UNIT Notes : Test conditions TA = 25o C, f=1.0 MHz. AC CHARACTERISTICS u Read Only Operations Characteristics PARAMETER -80 SYMBOLS JEDEC tAVAV tAVQV STANDARD tRC tACC Address to Output Delay /OE = VIL Read Cycle Time /CE = VIL Max 80 90 ns Min 80 90 ns DESCRIPTION TEST SETUP (NOTE1) (NOTE1) -90 UNIT URL: www.hbe.co.kr REV.02(August,2002) 4 HANBit Electronics Co., Ltd. HANBit tELQV tGLQV tEHQZ tGHQZ tAXQX tCE tOE tDF tDF tQH /CE or /OE, Whichever Occurs First Chip Enable to Output Delay Chip Enable to Output Delay Chip Enable to Output High-Z Output Enable to Output High-Z Output Hold Time From Addresses, Min /OE = VIL Max Max Max Max HMF8M16F8V-90 80 80 25 25 0 90 90 30 30 0 ns ns ns ns ns TEST CONDITIONS Notes : Test Conditions : Output Load : 1TTL gate and 100 pF Input rise and fall times : 5 ns Input pulse levels: 0V to 3.0V Timing measurement reference level Input : 1.5 V Output : 1.5V 3.3V 2.7kΩ Device Under Test CL IN3064 or Equivalent 6.2kΩ Diodes = IN3064 or Equivalent Note : CL = 100pF including jig capacitance URL: www.hbe.co.kr REV.02(August,2002) 5 HANBit Electronics Co., Ltd. HANBit u Erase/Program Operations PARAMETER SYMBOLS DESCRIPTION JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX STANDARD tWC tAS tAH tDS tDH tOES tGHWL tELWL tWHEH tWLWH tWHWL tWHWH1 tWHWH2 tGHWL tCS tCH tWP tWPH tWHWH1 tWHWH2 tVCS tRB tBUSY W rite Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write /CE Setup Time /CE Hold Time W rite Pulse Width W rite Pulse Width High Byte Programming Operation Sector Erase Operation Max Vcc Setup Time Recovery time from RY/BY Program/Erase Valid to RY/BY Delay Min Min Min Min Min Min Min Min Min Min Min Min Min Min Typ Typ HMF8M16F8V-90 -80 80 0 45 35 0 0 0 0 0 35 30 9 0.7 50 50 0 90 -90 90 0 45 45 0 0 0 0 0 35 30 9 0.7 50 50 0 90 UNIT ns ns ns ns ns ns ns ns ns ns ns µs sec sec µs µs µs u Alternate /CE Controlled Erase/Program Operations PARAMETER SYMBOLS DESCRIPTION JEDEC tAVAV tAVEL tELAX tDVEH tEHDX STANDARD tWC tAS tAH tDS tDH tOES tGHEL tWLEL tEHWH tGHEL /OE High to /WE Low tWS tWH /WE Setup Time /WE Hold Time Min Min 0 0 0 0 ns ns W rite Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write Min 0 0 ns Min Min Min Min Min Min 80 0 45 35 0 0 90 0 45 45 0 0 ns ns ns ns ns ns -80 -90 UNIT URL: www.hbe.co.kr REV.02(August,2002) 6 HANBit Electronics Co., Ltd. HANBit tELEH tEHEL tWHWH1 tWHWH2 tCP tCPH tWHWH1 tWHWH2 /CE Pulse Width /CE Pulse Width High Byte Programming Operation Sector Erase Operation Min Min Typ Typ HMF8M16F8V-90 35 30 9 0.7 35 30 9 0.7 ns ns µs sec URL: www.hbe.co.kr REV.02(August,2002) 7 HANBit Electronics Co., Ltd. HANBit u READ OPERATIONS TIMING HMF8M16F8V-90 u RESET TIMING URL: www.hbe.co.kr REV.02(August,2002) 8 HANBit Electronics Co., Ltd. HANBit u PROGRAM OPERATIONS TIMING HMF8M16F8V-90 u CHIP/SECTOR ERASE OPERATION TIMINGS URL: www.hbe.co.kr REV.02(August,2002) 9 HANBit Electronics Co., Ltd. HANBit u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS) HMF8M16F8V-90 u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS) URL: www.hbe.co.kr REV.02(August,2002) 10 HANBit Electronics Co., Ltd. HANBit u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM HMF8M16F8V-90 u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS URL: www.hbe.co.kr REV.02(August,2002) 11 HANBit Electronics Co., Ltd. HANBit PACKAGE DIMMENSIONS UNIT: mm (TOP Dimension) HMF8M16F8V-90 1.20 3.25 5.00 Main Board -Connector Part No. HMF8M16F8V-90 Top: 50-pin 0.6mm Pitch Free Height Plugs, AMP Part No. 316076-3 Bottom: 50-pin 0.6mm Pitch Free Height Receptacles, AMP Part No. 316077-3 URL: www.hbe.co.kr REV.02(August,2002) 12 HANBit Electronics Co., Ltd. HANBit ORDERING INFORMATION Component Number 8EA HMF8M16F8V-90 Part Number Density Org. Package Vcc SPEED HMF8M16F8V-90 16MByte 8MX 16bit 100 Pin-SMM 3.3V 90ns URL: www.hbe.co.kr REV.02(August,2002) 13 HANBit Electronics Co., Ltd.
HMF8M16F8V-90 价格&库存

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