HMF8M8F4VT

HANBit HMF8M8F4V/4VT FLASH-ROM MODULE 8MByte (8M x 8-Bit) – SMM Packages Part No. HMF8M8F4V,HMF8M8F4VT GENERAL DESCRIPTION The HMF8M8F4V is a high-speed flash read only memory (FROM) module containing 8,388,608 words organized in a x8bit configuration. The module consists of four 2M x 8 FROM mounted on a 100-pin, MMC connector FR4-printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Four chips enable inputs, /CS(/CS0, /CS1, /CS2, /CS3) are used to enable the module’s 4 chips independently. Output enable (/OE) and write enable (/WE) can set the memory input and output. The host system can detect a program or erase operation is complete by observing the Ready Pin, or reading the DQ7(Data # Polling) and DQ6(Toggle) status bits. When FROM module is disable condition the module is becoming power standby mode, system designer can get low-power design. All module components may be powered from a single +3V DC power supply and all inputs and outputs are LVTTLcompatible. PIN ASSIGNMENT FEATURES w Part identification HMF8M8F4V (Bottom boot block configuration) HMF8M8F4VT (Top boot block configuration) w Access time: 80, 90, 120ns w High-density 8MByte design w High-reliability, low-power design w Single + 3V to 3.6V power supply w 100-Pin Designed 50-Pin Fine Pitch MMC Connector P1,P2 w Minimum 1,000,000 write/erase cycle w 20-year data retention at 125 oC w Flexible sector architecture w Embedded algorithms w Erase suspend / Erase resume w The used device is Am29LV116B 50-PIN P1 Connector PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 - 80 - 90 -120 21 22 23 24 25 F Note: P1-A23(27Pin) must be Grounded Symbol VCC NC NC A20 NC NC NC VSS NC NC NC NC VSS DQ6 DQ4 DQ3 DQ2 VSS DQ1 DQ0 A0 A1 A2 A3 VCC PIN 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 Symbol VCC NC A19 A18 A17 A16 A15 VSS A14 A13 NC DQ7 VSS DQ5 A12 A11 A10 VSS A9 A8 A7 A6 A5 A4 VCC PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 50-PIN P2 Connector Symbol VCC NC /WE NC Ready NC NC VSS /OE /CS0 /CS1 NC VSS NC NC NC /Reset VSS NC NC NC NC VSS NC VCC PIN 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 Symbol VCC NC NC NC NC NC NC VSS NC /CS2 /CS3 NC VSS NC NC NC NC VSS NC NC NC NC VSS NC VCC OPTIONS w Timing 80ns access 90ns access 120ns access w Packages 100-pin MMC MARKING URL: www.hbe.co.kr REV.02(August,2002) 1 HANBit Electronics Co., Ltd. HANBit FUNCTIONAL BLOCK DIAGRAM 8 DQ0 - DQ7 21 A0 - A20 A0-20 HMF8M8F4V/4VT DQ 0-7 /WE /OE U1 /CE /CS0 A0-20 DQ 0-7 /WE /OE U2 /CE /CS1 A0-20 DQ 0-7 /WE /OE U3 /CE /CS2 A0-20 DQ 0-7 /WE /OE /WE /OE /CE U4 /CS3 /Reset Ready URL: www.hbe.co.kr REV.02(August,2002) 2 HANBit Electronics Co., Ltd. HANBit TRUTH TABLE MODE STANDBY RESET SECTOR PROTECT SECTOR UNPROTECT READ W RITE Note : X means don't care /CS Vcc±0.3V X L L L L /OE X X H H L H /WE X X L L H L HMF8M8F4V/4VT RESET Vcc±0.3V L VID VID H H DQ HIGH-Z HIGH-Z DIN, DOUT DIN, DOUT DOUT DOUT ABSOLUTE MAXIMUM RATINGS PARAMETER Voltage on Any Pin Relative to Vss Voltage on Vcc Supply Relative to Vss Oupput Short Circuit Current Storage Temperature RATING -0.5V to Vcc +0.5V -0.5V to +4.0V 200mA -65oC to +150oC Operating Temperature -55oC to +125oC w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED OPERATING CONDITIONS PARAMETER Vcc for regulated Supply Voltage Vcc for full voltage RANGE +3.0V to 3.6V +2.7V to 3.6V DC AND OPERATING CHARACTERISTICS PARAMETER Input Load Current Output Leakage Current Output High Voltage Output Low Voltage Vcc Active Read Current URL: www.hbe.co.kr REV.02(August,2002) TEST CONDITIONS VIN= VSS to VCC , VCC= VCC max VOUT= VSS to VCC, VCC= VCC max IOH = -2.0mA, Vcc = Vcc min IOL = 4.0mA, Vcc = Vcc min /CE = VIL, ,/OE=VIH, f=5MHz SYMBOL IL1 IL0 VOH VOL ICC1 MIN MAX ±1.0 ±1.0 UNITS µA µA V 0.85Vcc 0.45 16 V mA 3 HANBit Electronics Co., Ltd. HANBit Vcc Active Write Current Vcc Standby Current Vcc Reset Current Low Vcc Lock-Out Voltage /CE = VIL, /OE=VIH /CE, RESET=VCC±0.3V RESET=Vss±0.3V, ICC2 ICC3 ICC4 VLKO HMF8M8F4V/4VT 30 5 5 2.3 2.5 mA mA mA V ERASE AND PROGRAMMING PERFORMANCE LIMITS PARAMETER MIN. Sector Erase Time TYP. 0.7 MAX. Excludes 00H programming 15 Sec prior to erasure Byte Programming Time 9 300 µS Excludes system-level overhead Excludes system-level Chip Programming Time 18 54 sec overhead UNIT COMMENTS TSOP PIN CAPACITANCE PARAMETER SYMBOL CIN COUT CIN2 PARAMETER TEST SETUP DESCRIPTION Input Capacitance Output Capacitance Control Pin Capacitance VIN = 0 VOUT = 0 VIN = 0 6 8.5 7.5 7.5 12 9 pF pF pF TYP. MAX UNIT Notes : Test conditions TA = 25 C, f=1.0 MHz. o AC CHARACTERISTICS u Read Only Operations Characteristics PARAMETER -80 SYMBOLS JEDEC tAVAV tAVQV STANDARD tRC tACC Address to Output Delay /OE = VIL tELQV tGLQV tCE tOE Chip Enable to Output Delay Chip Enable to Output Delay /OE = VIL Max Max 80 80 90 90 ns ns Read Cycle Time /CE = VIL Max 80 90 ns Min 80 90 ns DESCRIPTION TEST SETUP (NOTE1) (NOTE1) -90 UNIT URL: www.hbe.co.kr REV.02(August,2002) 4 HANBit Electronics Co., Ltd. HANBit tEHQZ tGHQZ tAXQX tDF tDF tQH /CE or /OE, Whichever Occurs First Chip Enable to Output High-Z Output Enable to Output High-Z Output Hold Time From Addresses, HMF8M8F4V/4VT Max Max Min 25 25 0 30 30 0 ns ns ns TEST CONDITIONS Notes : Test Conditions : Output Load : 1TTL gate and 100 pF Input rise and fall times : 5 ns Input pulse levels: 0V to 3.0V Timing measurement reference level Input : 1.5 V Output : 1.5V 3.3V 2.7kΩ Device Under Test CL IN3064 or Equivalent 6.2kΩ Diodes = IN3064 or Equivalent Note : CL = 100pF including jig capacitance u Erase/Program Operations PARAMETER SYMBOLS DESCRIPTION JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX URL: www.hbe.co.kr REV.02(August,2002) -80 Min Min Min Min Min 80 0 45 35 0 -90 90 0 45 45 0 UNIT ns ns ns ns ns STANDARD tWC tAS tAH tDS tDH W rite Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time 5 HANBit Electronics Co., Ltd. HANBit tOES tGHWL tELWL tWHEH tWLWH tWHWL tWHWH1 tWHWH2 tGHWL tCS tCH tWP tWPH tWHWH1 tWHWH2 tVCS tRB tBUSY Output Enable Setup Time Read Recover Time Before Write /CE Setup Time /CE Hold Time W rite Pulse Width W rite Pulse Width High Byte Programming Operation Sector Erase Operation (Note1) Max Vcc Setup Time Recovery time from RY/BY Program/Erase Valid to RY/BY Delay Min Min Min Min Min Min Min Min Min Typ Typ HMF8M8F4V/4VT 0 0 0 0 35 30 9 0.7 50 50 0 90 0 0 0 0 35 30 9 0.7 50 50 0 90 ns ns ns ns ns ns µs sec sec µs µs µs u Alternate /CE Controlled Erase/Program Operations PARAMETER SYMBOLS DESCRIPTION JEDEC tAVAV tAVEL tELAX tDVEH tEHDX STANDARD tWC tAS tAH tDS tDH tOES tGHEL tWLEL tEHWH tELEH tEHEL tWHWH1 tWHWH2 tGHEL /OE High to /WE Low tWS tWH tCP tCPH tWHWH1 tWHWH2 /WE Setup Time /WE Hold Time /CE Pulse Width /CE Pulse Width High Byte Programming Operation Sector Erase Operation (Note) Min Min Min Min Typ Typ 0 0 35 30 9 0.7 0 0 35 30 9 0.7 ns ns ns ns µs sec W rite Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write Min 0 0 ns Min Min Min Min Min Min 80 0 45 35 0 0 90 0 45 45 0 0 ns ns ns ns ns ns -80 -90 UNIT URL: www.hbe.co.kr REV.02(August,2002) 6 HANBit Electronics Co., Ltd. HANBit u READ OPERATIONS TIMING HMF8M8F4V/4VT u RESET TIMING URL: www.hbe.co.kr REV.02(August,2002) 7 HANBit Electronics Co., Ltd. HANBit u PROGRAM OPERATIONS TIMING HMF8M8F4V/4VT u CHIP/SECTOR ERASE OPERATION TIMINGS URL: www.hbe.co.kr REV.02(August,2002) 8 HANBit Electronics Co., Ltd. HANBit HMF8M8F4V/4VT u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS) u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS) URL: www.hbe.co.kr REV.02(August,2002) 9 HANBit Electronics Co., Ltd. HANBit u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM HMF8M8F4V/4VT u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS URL: www.hbe.co.kr REV.02(August,2002) 10 HANBit Electronics Co., Ltd. HANBit PACKAGE DIMENSIONS HMF8M8F4V/4VT UNIT: mm 90.17 3.70 5.08 5.08 3.70 1 17.60 25 26 1 26 25.00 50 P1 25 P2 50 3.70 1.20 3.70 3.25 3.45 5.00 Main Board -Connector Part No. HMF8M8F4V Top: 50-pin 0.6mm Pitch Free Height Plugs, AMP Part No. 316076-3 Bottom: 50-pin 0.6mm Pitch Free Height Receptacles, AMP Part No. 316077-3 URL: www.hbe.co.kr REV.02(August,2002) 11 HANBit Electronics Co., Ltd. HANBit ORDERING INFORMATION HMF8M8F4V/4VT Part Number Density Org. Package Speed Vcc Function HMF8M8F4V HMF8M8F4VT 8MByte 8MByte 8MX 8bit 8MX 8bit 100 Pin-MMC 100 Pin-MMC 80,90,120(ns) 80,90,120(ns) 3V 3V Bottom Top URL: www.hbe.co.kr REV.02(August,2002) 12 HANBit Electronics Co., Ltd.